Datasheet IRLZ44ZSPBF Datasheet

Features

Pulsed Drain C

t

c

Single Pulse Aval

gy

d

Single Pulse Aval

gy Tested Value

h

Aval

t

c

R

titive Aval

gy

g

l

Logic Level

l

Advanced Process Technology

l

Ultra Low On-Resistance

l

175°C Operating Temperature

l

Fast Switching

l

Repetitive Avalanche Allowed up to Tjmax

l

Lead-Free

Description

This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

G

TO-220AB

IRLZ44ZPbF

PD - 95539A

IRLZ44ZPbF

IRLZ44ZSPbF

IRLZ44ZLPbF

HEXFET® Power MOSFET

D

V

= 55V

DSS

R

S

D2Pak

IRLZ44ZSPbF

DS(on)

ID = 51A

= 13.5mΩ

TO-262

IRLZ44ZLPbF

Absolute Maximum Ratings

ID @ TC = 25°C ID @ TC = 100°C I

DM

PD @TC = 25°C

V

GS

E

AS (Thermally limited)

(Tested )

E

AS

I

AR

E

AR

T

J

T

STG

Parameter Units

Continuous Drain Current, V Continuous Drain Current, V

urren

Power Dissipation W

Linear Derating Factor W/°C Gate-to-Source Voltage V

anche Curren

epe

Operating Junction and Storage Temperature Range°C

Soldering Temperature, for 10 seconds Mountin

anche Ener anche Ener



anche Ener

Torque, 6-32 or M3 screw

GS

@ 10V @ 10V

i

(Silicon Limited)

See Fig.12a, 12b, 15, 16

300 (1.6mm from case )

Max.

204

0.53

± 16

110

-55 to + 175

y

10 lbf

in (1.1Nym)

51 36

80

78

A

mJ

A

mJ

Thermal Resistance

Parameter Typ. Max. Units

R

θJC

R

θCS

R

θJA

R

θJA

Junction-to-Case

Case-to-Sink, Flat Greased Surface

Junction-to-Ambient

Junction-to-Ambient (PCB Mount)

k

ik

jk

––– 1.87 °C/W

0.50 –––

––– 62

––– 40

www.irf.com 1

10/01/10

IRLZ44Z/S/LPbF

El

l Ch

@ T

= 25°C (unl

ified)

/

Ω

g

(

)

ectrica

aracteristics

J

ess otherwise spec

Parameter Min. Typ. Max. Units

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

fs Forward Transconductance 27 ––– ––– V

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

D

L

S

C

iss

C

oss

C

rss

C

oss

C

oss

eff.

C

oss

Drain-to-Source Breakdown Voltage55––––––V

∆T

Breakdown Voltage Temp. Coefficient ––– 0.05 ––– V/°C

J

Static Drain-to-Source On-Resistance ––– 11 13.5

––– ––– 20 ––– ––– 22.5

Gate Threshold Voltage 1.0 ––– 3.0 V

Drain-to-Source Leakage Current ––– ––– 20 µA

––– ––– 250 Gate-to-Source Forward Leakage ––– ––– 200 nA Gate-to-Source Reverse Leaka

e ––– ––– -200 Total Gate Charge ––– 24 36 Gate-to-Source Charge ––– 7.5 ––– nC Gate-to-Drain ("Miller") Charge–––12––– Turn-On Delay Time ––– 14 ––– Rise Time ––– 160 ––– Turn-Off Delay Time ––– 25 ––– ns Fall Time ––– 42 ––– Internal Drain Inductance ––– 4.5 ––– Between lead,

Internal Source Inductance ––– 7.5 ––– from package

Input Capacitance ––– 1620 ––– Output Capacitance ––– 230 ––– Reverse Transfer Capacitance ––– 130 ––– pF Output Capacitance ––– 860 ––– Output Capacitance ––– 180 ––– Effective Output Capacitance ––– 280 –––

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

Continuous Source Current ––– ––– 51

(Body Diode) A Pulsed Source Current ––– ––– 204

Body Diode

c

Diode Forward Voltage––––––1.3V Reverse Recovery Time –––2132ns Reverse Recovery Charge ––– 16 24 nC Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Conditions

VGS = 0V, ID = 250µA Reference to 25°C, I

m

V

= 10V, ID = 31A

GS

m

V

= 5.0V, ID = 30A

GS

m

VGS = 4.5V, ID = 15A

D

e

e e

VDS = VGS, ID = 250µA

= 25V, ID = 31A

V

DS

V

= 55V, VGS = 0V

DS

V

= 55V, VGS = 0V, TJ = 125°C

DS

= 16V

V

GS

V

= -16V

GS

= 31A

I

D

V

= 44V

DS

VGS = 5.0V

e

VDD = 50V I

= 31A

D

R

= 7.5 Ω

G

VGS = 5.0V

e

nH 6mm (0.25in.)

and center of die contact VGS = 0V

V

= 25V

DS

ƒ = 1.0MHz VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz V

= 0V, VDS = 44V, ƒ = 1.0MHz

GS

V

= 0V, VDS = 0V to 44V

GS

Conditions

MOSFET symbol

showing the integral reverse

p-n junction diode. T

= 25°C, IS = 31A, VGS = 0V

J

TJ = 25°C, IF = 31A, VDD = 28V di/dt = 100A/µs

e

= 1mA

D

G

S

f

e

2 www.irf.com

IRLZ44Z/S/LPbF

1000

) A

( t

100

n e

r

r u

C e

c

r

10

u o S

o

t

n

i a

r

1

D ,

D

I

3.0V

≤

TOP 15V

BOTTOM 3.0V

60µs PULSE WIDTH

Tj = 25°C

0.1

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

1000.0

VGS

10V

8.0V

5.0V

4.5V

4.0V

3.5V

) A

( t n e

r

r u

C e

c

r u o S

o

t

n

i a

r D

, I

1000

TOP 15V

100

BOTTOM 3.0V

10

D

VGS

10V

8.0V

5.0V

4.5V

4.0V

3.5V

3.0V

≤

60µs PULSE WIDTH

Tj = 175°C

1

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

60

)

Α

(

t n e

r

100.0

u C e

c

r u o S

o

t

-

10.0

n

i a

r D

,

D

I

1.0

2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0

TJ = 25°C

TJ = 175°C

V

= 20V

DS

≤

60µs PULSE WIDTH

VGS, Gate-to-Source Voltage (V)

) S

( e

c n a

t c

40

u d n o c s n a

r T

d

r a

20

w

r o F , s

f G

V

DS

TJ = 175°C

TJ = 25°C

= 10V

380µs PULSE WIDTH

0

0 1020304050

ID, Drain-to-Source Current (A)

Fig 3. Typical Transfer Characteristics

Fig 4. Typical Forward Transconductance

Vs. Drain Current

www.irf.com 3

IRLZ44Z/S/LPbF

2500

2000

) F p

( e

1500

c n a

t

i c a p

1000

a C

, C

500

0

1 10 100

V

= 0V, f = 1 MHZ

GS

C

= C

gs

gd

ds

Ciss

Coss

Crss

+ Cgd, C

+ C

iss

C

rss

C

oss

VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

1000.0

) A

( t

100.0

n e

r

r u

C n

i a

r

10.0

D e

s

r e v e

R ,

D S

I

TJ = 175°C

TJ = 25°C

1.0

0.1

0.2 0.6 1.0 1.4 1.8

VSD, Source-to-Drain Voltage (V)

12

SHORTED

ds

gd

ID= 31A

) V

10

( e

g a

t

l o

8

V e

c

r u

6

o S

o

t

e

t

4

a G

,

S G

2

V

0

0 1020304050

VDS= 44V

VDS= 28V VDS= 11V

Q

Total Gate Charge (nC)

G

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

V

GS

= 0V

1000

) A

( t

100

n e

r

r u

C e

c

r u

10

o S

o

t

n

i a

r D

1

,

Tc = 25°C

D

I

Tj = 175°C Single Pulse

0.1 1 10 100 1000

OPERATION IN THIS AREA LIMITED BY RDS(on)

V

, Drain-toSource Voltage (V)

DS

100µsec

1msec

10msec

Fig 7. Typical Source-Drain Diode

Fig 8. Maximum Safe Operating Area

Forward Voltage

4 www.irf.com

IRLZ44Z/S/LPbF

τ

60

50

) A

(

40

t n e

r

r u

C

30

n

i a

r D

,

20

D

I

10

0

25 50 75 100 125 150 175

TJ , Junction Temperature (°C)

Fig 9. Maximum Drain Current Vs.

Case Temperature

10

2.5

e c n a

t s

i s e

R n O e

)

c

d

r

e

u

z

i

o

l

S

a

m

o

t

r

-

o

n

i

N

(

a

r D

,

) n o

( S D

R

ID = 30A

V

= 5.0V

GS

2.0

1.5

1.0

0.5

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

TJ , Junction Temperature (°C)

Fig 10. Normalized On-Resistance

Vs. Temperature

)

C

1

J h

t

Z (

e s n o p s e

R l a

m

r e h T

0.001

D = 0.50

0.20

R

2

3

R

2

τ

2

Ri (°C/W) τi (sec)

R

3

τ

C

τ

0.736 0.000345

3

0.687 0.00147

τ

3

0.449 0.007058

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

0.1

0.01

0.10

0.05

0.02

0.01

τ

J

τ

J

τ

1

τ

1

Ci= τi/Ri

1

R

1

τ

SINGLE PULSE ( THERMAL RESPONSE )

1E-006 1E-005 0.0001 0.001 0.01 0.1

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

www.irf.com 5

IRLZ44Z/S/LPbF

A

15V

L

D.U.T

I

AS

Ω

0.01

t

p

R

20V

V

DS

G

GS

Fig 12a. Unclamped Inductive Test Circuit

V

(BR)DSS

t

p

I

AS

Fig 12b. Unclamped Inductive Waveforms

Q

G

DRIVER

+

V

-

DD

320

) J

m

( y

g

r e

240

n E

e h c n a

l a v

160

A e

s

l u P

e

l g

80

n

i S

, S A

E

0

25 50 75 100 125 150 175

I

TOP

5.7A

BOTTOM

Starting TJ, Junction Temperature (°C)

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

D

3.7A

31A

10 V

Q

GS

V

G

Fig 13a. Basic Gate Charge Waveform

0

1K

Fig 13b. Gate Charge Test Circuit

Q

GD

Charge

DUT

3.0

) V

(

2.5

e g a

t

l o V

d

l

2.0

o h s e

r h

t

1.5

e

t a

G

) h

t

(

1.0

S

L

VCC

G

V

0.5

-75 -50 -25 0 25 50 75 100 125 150 175

ID = 250µA

TJ , Temperature ( °C )

Fig 14. Threshold Voltage Vs. Temperature

6 www.irf.com

IRLZ44Z/S/LPbF

1000

Duty Cycle = Single Pulse

100

) A

( t n e

r

r u

C

10

e h c n a

l a v A

1

0.1

1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01

0.01

0.05

0.10

tav (sec)

Fig 15. Typical Avalanche Current Vs.Pulsewidth

Allowed avalanche Current vs avalanche pulsewidth, tav assuming ∆ Tj = 25°C due to avalanche losses. Note: In no case should Tj be allowed to exceed Tjmax

100

TOP Single Pulse

) J

80

m

( y

g

r e n

60

E e

h c n a

l

40

a v

A ,

R A

20

E

BOTTOM 1% Duty Cycle ID = 31A

Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com)

1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a

temperature far in excess of T every part type.

2. Safe operation in Avalanche is allowed as long asT not exceeded.

. This is validated for

jmax

3. Equation below based on circuit and waveforms shown in Figures 12a, 12b.

4. P

avalanche pulse.

= Average power dissipation per single

D (ave)

5. BV = Rated breakdown voltage (1.3 factor accounts for

voltage increase during avalanche).

6. I

= Allowable avalanche current.

av

7. ∆T = Allowable rise in junction temperature, not to exceed

T

(assumed as 25°C in Figure 15, 16).

0

25 50 75 100 125 150 175

Starting TJ , Junction Temperature (°C)

Fig 16. Maximum Avalanche Energy

Vs. Temperature

jmax

t

Average time in avalanche.

av =

D = Duty cycle in avalanche = t Z

(D, tav) = Transient thermal resistance, see figure 11)

thJC

P

= 1/2 ( 1.3·BV·Iav) = DT/ Z

D (ave)

I

2DT/ [1.3·BV·Zth]

av =

E

AS (AR)

= P

·f

av

D (ave)·tav

thJC

www.irf.com 7

is

IRLZ44Z/S/LPbF





Reverse Recovery Current

Driver Gate Drive

D.U.T. ISDWaveform

D.U.T. VDSWaveform

Inductor Current

Inductor Curent

* V

GS

D.U.T

+

-

R

G

+



Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

-

• Low Leakage Inductance Current Transformer



-

• di/dt controlled by R

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

G

+

V

DD

Re-Applied Voltage

+

-

Period

P.W.

Body Diode Forward

Current

di/dt

Diode Recovery

dv/dt

Body Diode Forward Drop

Ripple ≤ 5%

= 5V for Logic Level Devices

D =

P. W .

Period

VGS=10V

V

DD

I

SD

*

Fig 17. Diode Reverse Recovery Test Circuit for N-Channel

HEXFET® Power MOSFETs

R

D.U.T.

D

+

V

DD

-

V

DS

V

GS

R

G

10V

Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %

Fig 18a. Switching Time Test Circuit

V

DS

90%

10% V

GS

t

d(on)tr

t

d(off)tf

Fig 18b. Switching Time Waveforms

8 www.irf.com

TO-220AB Package Outline

Dimensions are shown in millimeters (inches)

IRLZ44Z/S/LPbF

TO-220AB Part Marking Information

TH IS IS AN IRF1010 EXAMPLE:

LOT CODE 1789 ASS EMBLED ON WW 19, 1997 IN THE ASSEMBLY LINE "C"

Note: "P" inass embly line position

indicates "Lead - Free"

INTERNAT IONAL

RECTIFIER

LOGO

AS S E MB L Y LOT CODE

TO-220AB packages are not recommended for Surface Mount Application.

Notes:

1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/

2. For the most current drawing please refer to IR website at http://www.irf.com/package/

www.irf.com 9

PAR T NUMBER

DATE CODE YE AR 7 = 1997 WE EK 19 LINE C

IRLZ44Z/S/LPbF

D2Pak Package Outline

Dimensions are shown in millimeters (inches)

D2Pak Part Marking Information

THIS IS AN IRF530S WITH LOT CODE 8024

ASS EMBL ED ON WW 02, 2000 IN THE ASSEMBLY LINE "L"

INTER NATIONAL

RECTIF IER

LOGO

ASSEMBLY LOT CODE

F530S

OR

INTER NATIONAL

RECTIFIE R

LOGO

AS S E MB L Y LOT CODE

F5 30S

PART NUMBER

DATE CODE P = DESIGNATES LEAD - FREE

PRODUCT (OPTIONAL ) YEAR 0 = 2000 WEE K 02 A = AS S E MBL Y S I T E CODE

Notes:

1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/

2. For the most current drawing please refer to IR website at http://www.irf.com/package/

10 www.irf.com

PART NUMBER

DATE CODE YEAR 0 = 2000 WEEK 02 LINE L

TO-262 Package Outline

Dimensions are shown in millimeters (inches)

IRLZ44Z/S/LPbF

TO-262 Part Marking Information

EXAMPLE : T HIS IS AN IR L3103L

LOT CODE 1789 ASS EMBL ED ON WW 19, 1997 IN THE ASSEMBLY LINE "C"

INTE RNATIONAL

RECTIFIER

LOGO

AS S E MB L Y LOT CODE

OR

INTERNATIONAL

RECTIFIER

LOGO

ASSEMBLY LOT CODE

Notes:

1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/

2. For the most current drawing please refer to IR website at http://www.irf.com/package/

www.irf.com 11

PART NUMBER

DATE CODE YEAR 7 = 1 997 WEEK 19 LINE C

PART NU MBE R

DAT E CODE P = DE S IGNAT E S L EAD -F RE E

PRODUCT (OPTIONAL) YEAR 7 = 1997 WEE K 19 A = ASSEMBLY SITE CODE

IRLZ44Z/S/LPbF

D2Pak Tape & Reel Infomation

TRR

FEED DIRECTION

TRL

FEED DIRECTION

1.85 (.073)

1.65 (.065)

10.90 (.429)

10.70 (.421)

4.10 (.161)

3.90 (.153)

1.60 (.063)

1.50 (.059)

11.60 (.457)

11.40 (.449)

16.10 (.634)

15.90 (.626)

1.60 (.063)

1.50 (.059)

1.75 (.069)

1.25 (.049)

15.42 (.609)

15.22 (.601)

0.368 (.0145)

0.342 (.0135)

24.30 (.957)

23.90 (.941)

4.72 (.136)

4.52 (.178)

330.00 (14.173) MAX.

NOTES :

1. CO MFORMS TO EIA-418.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION MEASURED @ HUB.

4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

Notes:



Repetitive rating; pulse width limited by

max. junction temperature. (See fig. 11).

 Limited by T

RG = 25Ω, I

, starting TJ = 25°C, L = 0.166mH

Jmax

= 31A, VGS =10V. Part not

AS

recommended for use above this value.

 Pulse width ≤ 1.0ms; duty cycle ≤ 2%.  C

eff. is a fixed capacitance that gives the

oss

same charging time as C from 0 to 80% V

DSS

.

oss

while V

is rising

DS

This product has been designed and qualified for the Industrial market.

13.50 (.532)

12.80 (.504)

27.40 (1.079)

23.90 (.941)

4

60.00 (2 .362) MIN.

30.40 (1.197) MAX.

4

3

 Limited by T

26.40 (1.039)

24.40 (.961)

, see Fig.12a, 12b, 15, 16 for typical repetitive

Jmax

avalanche performance.

 This value determined from sample failure population. 100%

tested to this value in production.

 This is only applied to TO-220AB pakcage.  This is applied to D

4 or G-10 Material). For recommended footprint and soldering

techniques refer to application note #AN-994.

 R

is measured at TJ approximately 90°C

θ

2

Pak, when mounted on 1" square PCB (FR-

Data and specifications subject to change without notice.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information. 10/2010

12 www.irf.com

Datasheet IRLZ44ZSPBF Datasheet

Specifications and Main Features

Frequently Asked Questions

User Manual