PD - 97730
g
y
IRLTS6342PbF
V
V
R
DS(on) max
(@VGS = 4.5V)
R
DS(on) max
(@VGS = 2.5V)
Q
g (typical)
I
(@T
= 25°C)
A
Applications
DS
GS
D
30 V
12 V
±
17.5
22.0
m
m
11
8.3 A
nC
Ω
Ω
D
1
2
D
G
3
6
D
D
5
S
4
• System/Load Switch
Features and Benefits
Features Resulting Benefits
HEXFET® Power MOSFET
Industry-Standard TSOP-6 Packa
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Consumer Qualification Increased Reliability
e Multi-Vendor Compatibility
⇒
Environmentally Friendlier
TSOP-6
Orderable part number Package Type Standard Pack
Form Quantit
IRLTS6342TRPBF TSOP-6 Tape and Reel 3000
Absolute Maximum Ratings
Max.
30
±12
8.3
6.7
64
2.0
1.3
0.02
-55 to + 150
V
DS
V
GS
@ TA = 25°C
I
D
I
@ TA = 70°C
D
I
DM
PD @TA = 25°C
PD @TA = 70°C
T
J
T
STG
Parameter Units
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor W/°C
Operating Junction and
Storage Temperature Range
c
e
e
@ 4.5V
GS
@ 4.5V
GS
Note
V
A
W
°C
Notes through are on page 2
www.irf.com 1
9/27/11
IRLTS6342PbF
)
r
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
DSS
ΔΒV
/ΔT
DSS
R
DS(on)
V
GS(th
Δ
V
GS(th)
I
DSS
I
GSS
gfs Forward Transconductance 25 ––– ––– S
Q
g
Q
gs
Q
gd
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
r
Thermal Resistance
R
θJA
Drain-to-Source Breakdown Voltage 30 ––– ––– V
Breakdown Voltage Temp. Coefficient ––– 23 ––– mV/°C
J
Static Drain-to-Source On-Resistance
––– 14.0 17.5
––– 17.5 22.0
Gate Threshold Voltage 0.5 ––– 1.1 V
Gate Threshold Voltage Coefficient ––– -4.3 ––– mV/°C
Drain-to-Source Leakage Current ––– ––– 1.0
––– ––– 150
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100
Total Gate Charge ––– 11 –––
Gate-to-Source Charge ––– 0.5 –––
Gate-to-Drain Charge ––– 4.6 –––
Gate Resistance ––– 2.2 –––
Turn-On Delay Time ––– 5.4 –––
Rise Time –––11–––
Turn-Off Delay Time ––– 32 –––
Fall Time ––– 15 –––
Input Capacitance ––– 1010 –––
Output Capacitance ––– 96 –––
Reverse Transfer Capacitance ––– 70 –––
Parameter Min. Typ. Max. Units
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
c
Diode Forward Voltage ––– ––– 1.2 V
Reverse Recovery Time ––– 13 20 ns
Reverse Recovery Charge ––– 5.8 8.7 nC
––– –––
––– –––
Parameter Units
Junction-to-Ambient
e
2.0
64
Typ.
–––
Conditions
VGS = 0V, ID = 250μA
Reference to 25°C, I
V
= 4.5V, ID = 8.3A
GS
Ω
m
VGS = 2.5V, ID = 6.7A
V
= VGS, ID = 10μA
DS
= 24V, VGS = 0V
V
DS
μA
nA
nC
= 24V, VGS = 0V, TJ = 125°C
V
DS
V
= 12V
GS
= -12V
V
GS
= 10V, ID = 6.4A
V
DS
V
= 4.5V
GS
V
= 15V
DS
= 6.4A
I
D
Ω
V
= 15V, VGS = 4.5V
DD
ID = 6.4A
ns
R
G
= 6.8Ω
See Figs. 18
V
= 0V
GS
= 25V
V
pF
DS
ƒ = 1.0MHz
Conditions
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
TJ = 25°C, IS = 8.3A, VGS = 0V
T
= 25°C, IF = 6.4A, VDD = 24V
J
di/dt = 100/μs
d
Max.
62.5
= 1mA
D
d
d
e
G
D
S
d
°C/W
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
When mounted on 1 ich square copper board.
R
is measured at T
θ
of approximately 90°C.
J
2 www.irf.com
IRLTS6342PbF
1000
TOP 10V
)
100
A
(
t
n
e
r
r
u
10
C
e
c
r
u
o
S
-
1
o
t
n
i
a
r
D
,
0.1
D
I
1.4V
≤
BOTTOM 1.4V
60μs PULSE WIDTH
Tj = 25°C
0.01
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
)
A
(
t
n
e
r
r
u
C
e
c
r
u
o
S
o
t
n
i
a
r
D
,
D
I
TJ = 150°C
10
TJ = 25°C
1
V
= 15V
DS
≤60μs PULSE WIDTH
0.1
1.0 1.5 2.0 2.5 3.0 3.5
VGS, Gate-to-Source Voltage (V)
VGS
4.5V
2.5V
2.0V
1.7V
1.6V
1.5V
100
)
A
(
t
n
e
r
10
r
u
C
e
c
r
u
o
S
o
t
-
1
n
i
a
r
D
,
D
I
0.1
1.4V
60μs PULSE WIDTH
≤
Tj = 150°C
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.8
e
c
n
a
t
s
i
s
e
R
n
O
e
c
r
u
o
S
o
t
n
i
a
r
D
,
)
n
o
(
S
D
R
ID = 8.3A
V
= 4.5V
1.6
1.4
)
d
e
z
i
l
1.2
a
m
r
o
N
(
1.0
0.8
GS
0.6
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
TOP 10V
BOTTOM 1.4V
VGS
4.5V
2.5V
2.0V
1.7V
1.6V
1.5V
Fig 3. Typical Transfer Characteristics
10000
)
F
1000
p
(
e
c
n
a
t
i
c
a
p
a
C
,
C
100
V
= 0V, f = 1 MHZ
GS
C
= C
iss
rss
oss
= C
= C
gs
gd
ds
C
C
+ Cgd, C
+ C
gd
C
iss
C
oss
C
rss
SHORTED
ds
Fig 4. Normalized On-Resistance vs. Temperature
14
)
V
(
e
g
a
t
l
o
V
e
c
r
u
o
S
o
t
e
t
a
G
,
V
ID= 6.4A
12
10
8
6
4
S
G
2
VDS= 24V
VDS= 15V
VDS= 6.0V
0
10
1 10 100
0 5 10 15 20 25 30
Q
Total Gate Charge (nC)
G
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
www.irf.com 3
IRLTS6342PbF
100
)
A
(
t
n
e
r
r
u
C
n
i
a
r
10
D
e
s
r
e
v
e
R
,
D
S
I
1.0
0.4 0.6 0.8 1.0 1.2 1.4
TJ = 150°C
TJ = 25°C
V
= 0V
GS
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
8.0
6.0
)
A
(
t
n
e
r
r
u
C
4.0
n
i
a
r
D
,
D
I
2.0
1000
OPERATION IN THIS AREA
)
A
(
t
100
n
e
r
r
u
C
e
c
r
u
10
o
S
o
t
n
i
a
r
D
1
,
TA = 25°C
D
I
Tj = 150°C
Single Pulse
0.1
0.1 1.0 10 100
LIMITED BY RDS(on)
1msec
10msec
DC
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
1.4
)
V
1.2
(
e
g
a
t
l
1.0
o
V
d
l
o
0.8
h
s
e
r
h
t
0.6
e
t
a
G
,
)
0.4
h
t
(
S
G
0.2
V
ID = 10μA
ID = 250μA
ID = 1.0mA
100μsec
0.0
25 50 75 100 125 150
TA , Ambient Temperature (°C)
Fig 9. Maximum Drain Current vs.
Ambient Temperature
100
W
/
C
°
)
A
J
h
t
Z
(
e
s
n
o
p
s
e
R
l
a
m
r
e
h
T
10
0.1
0.01
0.001
D = 0.50
0.20
0.10
0.05
1
1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
t1 , Rectangular Pulse Duration (sec)
0.0
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 10. Threshold Voltage vs. Temperature
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T
A
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
4 www.irf.com
)
45
Ω
m
(
e
40
c
n
a
t
s
i
35
s
e
R
n
30
O
e
c
r
25
u
o
S
-
20
o
t
n
i
a
r
15
D
,
)
n
o
10
(
S
D
R
5
TJ = 125°C
TJ = 25°C
ID = 8.0A
1 2 3 4 5 6 7 8 9 10 11 12
V
Gate -to -Source Voltage (V)
GS,
Fig 12. On-Resistance vs. Gate Voltage
IRLTS6342PbF
)
70
Ω
(
m
e
c
60
n
a
t
s
i
s
e
50
R
n
O
40
e
c
r
u
o
S
30
o
t
n
i
a
20
r
D
,
)
n
10
o
(
S
D
R
0
0 10 20 30 40 50
ID, Drain Current (A)
Fig 13. Typical On-Resistance vs. Drain Current
Vgs = 2.5V
Vgs = 4.5V
100
)
J
m
90
(
y
g
r
80
e
n
E
70
e
h
c
n
60
a
l
a
v
50
A
e
s
l
40
u
P
e
30
l
g
n
i
20
S
,
S
10
A
E
TOP 0.9A
BOTTOM6.4A
I
D
1.5A
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
D.U.T
+
-
R
G
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
-
• Low Leakage Inductance
Current Transformer
-
• dv/dt controlled by R
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
G
+
V
DD
+
-
Reverse
Recovery
Current
Re-Applied
Voltage
16000
12000
)
W
(
r
8000
e
w
o
P
4000
0
1E-8 1E-7 1E-6 1E-5 1E-4 1E-3
Time (sec)
Fig 15. Typical Power vs. Time
Driver Gate Drive
P.W.
D.U.T. ISDWaveform
D.U.T. VDSWaveform
Inductor Curent
Period
Body Diode Forward Drop
Ripple ≤ 5%
Body Diode Forward
Current
di/dt
Diode Recovery
dv/dt
D =
P. W .
Period
VGS=10V
V
DD
I
SD
*
* V
= 5V for Logic Level Devices
GS
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
www.irf.com 5
IRLTS6342PbF
A
Vds
Id
Vgs
L
VCC
0
1K
Fig 17a. Gate Charge Test Circuit
V
DS
DUT
Vgs(th)
Qgs1
Qgs2 Qgd Qgodr
Fig 17b. Gate Charge Waveform
V
15V
L
DRIVER
t
p
(BR)DSS
R
G
20V
D.U.T
I
AS
Ω
0.01
t
p
+
V
DD
-
Fig 18a. Unclamped Inductive Test Circuit
R
D.U.T.
D
+
V
DD
-
V
DS
V
GS
R
G
10V
V
GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1
Fig 19a. Switching Time Test Circuit
I
AS
Fig 18b. Unclamped Inductive Waveforms
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 19b. Switching Time Waveforms
6 www.irf.com
TSOP-6 Package Outline
W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR
W = (27-52) IF PRECEDED BY A LE T TE R
CODE
TOP
PART NUMBER
W = WE E K
Y = YE AR
LOT
F = IRF5801
(as shown here) indicates Lead-Free.
Note: A li ne above the wor k week
A = S I3443DV
B = IR F 5800
G = IRF 5803
D = IR F 5851
E = IR F 5852
I = IRF5805
C = I R F 5 8 5 0
N = IR F 5802
K = IR F 5810
PART NUMBER CODE REFERENCE:
J = I RF 5806
H = IRF5804
82008
22002 02
YEAR
2001
Y
1
WORK
01
WE E K
52005
2003
2004
3
4
2006
2007
6
7
04
03
B
W
A
C
D
CC2003 29
2009
2010
9
0
25
24
26
YYE AR
2001
2002
A
B
WE E K
WORK
28
27
Y
X
Z
W
A
B
J2009
F2006
2004
2005
D
E
2007
2008
G
H
30
2010 K
51
50
D
X
Y
O = IRL T S6342T R PB F
P = IRF TS 8342TRPBF
S = IRL TS 2242T RPB F
R = IR F TS 9342T RPB F
IRLTS6342PbF
TSOP-6 Part Marking Information
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
www.irf.com 7
IRLTS6342PbF
TSOP-6 Tape & Reel Information
Qualification information
Qualification level
Moisture Sensitivity Level
RoHS compliant Yes
†
Cons umer
(per JE DEC JES D47F
TSOP-6
††
†††
guidelines )
MS L 1
(per JE DEC J-S T D-020D
†††
† Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
†† Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
††† Applicable version of JEDEC standard at the time of product release.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.09/2011
8 www.irf.com
)
IMPORTANT NOTICE
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
In addition, any information given in this document
is subject to customer’s compliance with its
obligations stated in this document and any
applicable legal requirements, norms and
standards concerning customer’s products and any
use of the product of Infineon Technologies in
customer’s applications.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
respect to such application.
For further information on the product, technology,
delivery terms and conditions and prices please
contact your nearest Infineon Technologies office
(
www.infineon.com
).
WARNINGS
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies office.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized representatives of Infineon
Technologies, Infineon Technologies’ products may
not be used in any applications where a failure of
the product or any consequences of the use thereof
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