Datasheet IRHMS57Z60 Datasheet (IOR)

55

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RADIATION HARDENED JANSR2N7478T1 POWER MOSFET 30V, N-CHANNEL THRU-HOLE (Low-Ohmic TO-254AA)

Product Summary

Part Number Radiation Level RDS(on) ID QPL Part Number

IRHMS57Z60 100K Rads (Si) 0.0045Ω 45A* JANSR2N7478T1 IRHMS53Z60 300K Rads (Si) 0.0045Ω 45A* JANSF2N7478T1 IRHMS54Z60 500K Rads (Si) 0.0045Ω 45A* JANSG2N7478T1 IRHMS58Z60 1000K Rads (Si) 0.0045Ω 45A* JANSH2N7478T1

International Rectifier’s R5 high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm of low R power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.

and low gate charge reduces the

DS(on)

TM

technology provides

2

)). The combination

PD-96961A

IRHMS57Z60

REF: MIL-PRF-19500/697

TECHNOLOGY





Low-Ohmic

TO-254AA

Features:

n Low RDS(on) n Fast Switching n Single Event Effect (SEE) Hardened n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Eyelets n Electrically Isolated n Light Weight

Absolute Maximum Ratings

Parameter Units

ID @ VGS = 12V, TC = 25°C Continuous Drain Current 45*

ID @ VGS = 12V, TC = 100°C Continuous Drain Current 45*

I

DM

PD @ TC = 25°C Max. Power Dissipation 208 W

V

GS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt Â 1.08

T

J

T

STG

* Current is limited by package For footnotes refer to the last page

Pulsed Drain Current À 180

Linear Derating Factor 1.67 W/°C Gate-to-Source Voltage ±20 V Single Pulse Avalanche Energy Á 1250 mJ Avalanche Current À 45 A Repetitive Avalanche Energy À 20.8 mJ

Operating Junction -55 to 150 Storage Temperature Range Lead Temperature 300 (0.063 in. /1.6 mm from case for 10s) Weight 9.3 (Typical) g

Pre-Irradiation

A

V/ns

o

C

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04/25/06

IRHMS57Z60, JANSR2N7478T1 Pre-Irradiation

Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Parameter Min Typ Max Units Test Conditions

BV

DSS

∆BV

DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

LS + L

D

bonded from Source Pin to Drain Pad

C

iss

C

oss

C

rss

R

g

Drain-to-Source Breakdown Voltage 30 — — V VGS = 0V, ID = 1.0mA

/∆TJTemperature Coefficient of Breakdown — 0.03 — V/°C Reference to 25°C, ID = 1.0mA

Voltage Static Drain-to-Source On-State — — 0.0045 Ω VGS = 12V, ID = 45A Resistance Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID = 1.0mA Forward Transconductance 73 — — S ( ) VDS = 15V, IDS = 45A Ã Zero Gate Voltage Drain Current — — 10 V

——25 VDS = 24V,

Gate-to-Source Leakage Forward — — 100 VGS = 20V Gate-to-Source Leakage Reverse — — -100 VGS = -20V Total Gate Charge — — 240 VGS =12V, ID = 45A Gate-to-Source Charge — — 60 nC VDS = 15V Gate-to-Drain (‘Miller’) Charge — — 55 Turn-On Delay Time — — 35 VDD = 15V, ID = 45A Rise Time — — 175 VGS =12V, RG = 2.35Ω Turn-Off Delay Time — — 80 Fall Time — — 40 Total Inductance — 6.8 — Measured from Drain lead (6mm /0.25in.

from package) with Source wires internally

Input Capacitance — 8884 — VGS = 0V, VDS = 25V Output Capacitance — 4334 — p F f = 1.0MHz Reverse Transfer Capacitance — 270 — Internal Gate Resistance — 0.73 — Ω f = 1.0MHz, open drain

Ω

= 24V ,V

µA

nA

ns

nH

from package) to Source lead (6mm /0.25in.

DS

VGS = 0V, TJ = 125°C

GS

Ã

= 0V

Source-Drain Diode Ratings and Characteristics

Parameter Min Typ Max Units Test Conditions

I

Continuous Source Current (Body Diode) — — 45*

S

I

Pulse Source Current (Body Diode) À — — 180

SM

V

Diode Forward Voltage — — 1.2 V Tj = 25°C, IS = 45A, VGS = 0V Ã

SD

t

Reverse Recovery Time — — 140 ns Tj = 25°C, IF = 45A, di/dt ≤ 100A/µs

rr

Q

Reverse Recovery Charge — — 350 n C VDD ≤ 25V Ã

RR

t

Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L

on

* Current is limited by package

A

Thermal Resistance

Parameter Min Typ Max Units Test Conditions

R

thJC

R

thCS

R

thJA

Note: Corresponding Spice and Saber models are available on International Rectifier Web site.

For footnotes refer to the last page

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Junction-to-Case — — 0.60 Case-to-Sink — 0.21 — °C/W Junction-to-Ambient — — 48 Typical socket mount

+ LD.

S

Radiation Characteristics

Pre-Irradiation IRHMS57Z60, JANSR2N7478T1

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability . The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.

T able 1. Electrical Characteristics @ Tj = 25°C, Post T otal Dose Irradiation ÄÅ

Parameter Up to 500K Rads(Si)

BV

1. Part numbers IRHMS57Z60 (JANSR2N7478T1), IRHMS53Z60 (JANSF2N7478T1) and IRHMS54Z60 (JANSG2N7478T1)

2. Part number IRHMS58Z60 (JANSH2N7478T1)

Drain-to-Source Breakdown Voltage 30 — 30

DSS

V

GS(th)

I

GSS

I

GSS

I

DSS

R

DS(on)

R

DS(on)

V

SD

Gate Threshold Voltage 2.0 4.0 1.5 4.0 VGS = VDS, ID = 1.0mA Gate-to-Source Leakage Forward — 100 — 100 Gate-to-Source Leakage Reverse — -100 — -100 VGS = -20 V Zero Gate Voltage Drain Current — 10 — 25 µA VDS= 24V, V Static Drain-to-Source Ã — 0.0040 — 0.0045 Ω VGS =12V, ID = 45A On-State Resistance (TO-3) Static Drain-to-Source On-State Ã — 0.0045 — 0.0050 Ω VGS =12V, ID = 45A Resistance (Low-Ohmic TO-254) Diode Forward Voltage Ã — 1.2 — 1.2 V VGS = 0V , IS = 45A

Min Max Min Max

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

1

1000K Rads (Si)2

—

V

Units

Test Conditions

VGS = 0V, ID = 1.0mA

nA

VGS = 20V

GS

= 0V

Table 2. Single Event Effect Safe Operating Area

Io n LE T Energy Range

(MeV/(mg/cm2)) (MeV) (µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V Cu 28 261 40 30 30 30 25 15 Br 37 285 37 30 30 30 23 15 I 60 344 33 25 25 20 15 8

VDS (V)

35 30 25 20 15

VDS

10

Cu Br

I 5 0

-20-15-10-50

VGS

Fig a. Single Event Effect, Safe Operating Area

For footnotes refer to the last page

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IRHMS57Z60, JANSR2N7478T1 Pre-Irradiation

1000

TOP 15V

) A

( t

100

n

e

r

u C e

c

r

10

u

o S

-

o

t

-

n

i

a

r

1

D ,

D

I

4.0V

60µs PULSE WIDTH

12V 10V

8.0V

6.0V

5.0V

4.5V BOTTOM 4.0V

Tj = 25°C

0.1

0.1 1 10 100 VDS, Drain-to-Source Voltage (V)

1000

) A

(

t

n

e

r

100

u C e

c

r

u

o S

-

o

t

-

n

10

i

a

r D

,

D

I

TJ = 150°C

TJ = 25°C

V

= 15V

DS

15

60µs PULSE WIDTH

1

44.555.56 VGS, Gate-to-Source Vol tage (V)

VGS

1000

) A

( t

n

e

r

100

u C e

c

r

u

o S

-

o

t

-

n

10

i

a

r D ,

D

I

4.0V

60µs PULSE WIDTH Tj = 150°C

1

0.1 1 10 100 V

, Drain-to-Source Voltage (V)

DS

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

2.0

e

c

n

a

t

s

i

s

e R n O e

c

r

u

o S

-

o

t

-

n

i

a

r D

,

)

n

o

( S D

R

ID = 45A

1.5

)

d

e

z

i

l

1.0

a m

r

o N

(

0.5

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature (° C)

VGS TOP 15V 12V 10V

8.0V

6.0V

5.0V

4.5V BOTTOM 4.0V

V

= 12V

GS

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs. Temperature

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Pre-Irradiation IRHMS57Z60, JANSR2N7478T1

) F

p

( e

c

n

a

t

i

c

a

p

a C

, C

16000

14000

12000

10000

8000

6000

4000

2000

0

V

= 0V, f = 1 MHz

GS

C

= C

C

= C

C

rss

gs

gd

ds

iss

C

oss

+ Cgd, C

+ C

iss

C

rss

C

oss

1 10 100

100KHz

SHORTED

ds

gd

VDS, Drain-to-Source V oltage (V)

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

1000

20

ID = 45A

) V

(

16

e

g

a

t

l

o V

12

e

c

r

u

o S

-

o

t

8

-

e

t

a G

,

S

4

G

V

VDS = 24V VDS = 15V

FOR TEST CIRCUIT SEE FIGURE 13

0

0 40 80 120 160 200 240 280 320

Q

Total G ate Charge (nC)

G,

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

1000

) A

(

t

100

n

e

r

u C n

i

a

r D e

s

r

e

v

e R

, D S

I

TJ = 150°C

10

1

2

T

=

J

V

0.1

0.0 0.4 0.8 1.2 1.6 V

, Source-to-Drain V oltage (V)

SD

Fig 7. Typical Source-Drain Diode

5

°

GS

C

= 0V

) A

(

t

n

e

r

u C e

c

r

u

100

o S

-

o

t

-

n

i

a

r D ,

D

I

Tc = 25°C

OPERATION IN THIS AREA LIMITED BY RDS(on)

Tj = 150°C Single Pulse

10

0 1 10 100

V

, Drain-to-Source Voltage (V)

DS

Fig 8. Maximum Safe Operating Area

100µs

1ms

10ms

Forward Voltage

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IRHMS57Z60, JANSR2N7478T1 Pre-Irradiation

V 9

1 V

+

-

R

D.U.T.

D

V

DD

160

120

V

LIMITED BY PACKAGE

R

G

80

Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %

DS

V

GS

V

GS

D

I , Drain Current (A)

40

0

25 50 75 100 125 150

T , Case Temperatu re ( C)

C

°

Fig 9. Maximum Drain Current Vs.

Fig 10a. Switching Time Test Circuit

DS

0%

GS

t

d(on)tr

t

d(off)tf

Case Temperature

Fig 10b. Switching Time Waveforms

1

D = 0.50

)

C

0.1

J

h

t

Z (

e

s

n

o

0.01

p

s

e R

l

a m

r

e

0.001

h T

0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1

0.20

0.10

0.05

0.02

0.01 SINGLE PULSE

( THERMAL RESPONSE )

t1 , Rectangular Pulse Durat ion (sec)

P

DM

t

1

t

2

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthj c + Tc

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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Pre-Irradiation IRHMS57Z60, JANSR2N7478T1

V

S

Current Regulator

I

A

15V

DRIVER

+

-

R

G

V

20V

V

DS

GS

t

L

.

D.U.T

I

AS

0.01

p

Ω

Fig 12a. Unclamped Inductive Test Circuit

V

(BR)DSS

t

p

4000

TOP

I

D

20.1A

28.5A

3200

2400

V

DD

1600

800

AS

E , Single Pulse Avalanche Energy (mJ)

0

25 50 75 100 125 150

BOTTOM

45A

Starting TJ , - Junction Temperature (°C)

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

AS

Fig 12b. Unclamped Inductive Waveforms

Q

G

12 V

Q

GS

G

Q

GD

Charge

Fig 13a. Basic Gate Charge Waveform

Same Type as D.U.T.

50KΩ

12V

.2µF

V

GS

.3µF

D.U.T.

3mA

I

G

Current Sampling Resistors

I

+

-

D

Fig 13b. Gate Charge Test Circuit

V

D

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IRHMS57Z60, JANSR2N7478T1 Pre-Irradiation

Footnotes:

À Repetitive Rating; Pulse width limited by

maximum junction temperature.

Á V

= 25V, starting TJ = 25°C, L= 1.1 mH

DD

Peak IL = 45A, VGS = 12V

Â I

≤ 45A, di/dt ≤ 150A/µs,

SD

VDD ≤ 30V, TJ ≤ 150°C

Ã Pulse width ≤ 300 µs; Duty Cycle ≤ 2% Ä Total Dose Irradiation with V

12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A.

Å Total Dose Irradiation with V

24 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A.

GS

DS

Bias.

Case Outline and Dimensions — Low-Ohmic TO-254AA

0.12 [.005]

1.27 [.050]

1.02 [.040]

B

>@

0$;

3.81 [.150]

C

2X

13.84 [.545]

13.59 [.535]

123

20.32 [.800]

20.07 [.790]

>@ >@

1.14 [.045]

3X

0.89 [.035]

0.36 [.014]

3.78 [.149]

3.53 [.139] A

17.40 [.685]

16.89 [.665]

3.81 [.150]

127(6

1. DIMENSI ONING & TOLERANCING PE R ASME Y14.5M-1994.

2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].

3. CONTROLLING DIMENSION: IN CH.

4. CONFORMS TO JEDEC OUTLINE TO-254AA.

B A

6.60 [.260]

6.32 [.249]

13.84 [.545]

13.59 [.535]

PIN ASSIGNMENTS

1 = DRAIN 2 = SOURCE 3 = GATE

CAUTION

BERYLLIA WARNING PER MIL-PRF-19500

Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium.

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TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.

Data and specifications subject to change without notice. 04/2006

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