Datasheet IRF9Z34N Datasheet (International Rectifier)

PD - 9.1485B

IRF9Z34N

HEXFET® Power MOSFET

l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l P-Channel
l Fully Avalanche Rated

Description

G

D

V

= -55V

DSS

R

S

DS(on)

= -19A

I

D

= 0.10Ω

Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.

The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220

TO-220AB

contribute to its wide acceptance throughout the
industry.

Absolute Maximum Ratings

Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ -10V -19
ID @ TC = 100°C Continuous Drain Current, VGS @ -10V -14 A
I

DM

PD @TC = 25°C Power Dissipation 68 W

V

GS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt  -5.0 V/ns
T

J

T

STG

Pulsed Drain Current  -68

Linear Derating Factor 0.45 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 180 mJ
Avalanche Current -10 A
Repetitive Avalanche Energy 6.8 mJ

Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)

°C

Thermal Resistance

R

θJC

R

θCS

R

θJA

Junction-to-Case ––– 2.2
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
Junction-to-Ambient ––– 62

Parameter Typ. Max. Units

8/25/97

IRF9Z34N

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

D

L

S

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage -55 ––– – –– V VGS = 0V, ID = -250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– -0.05 –– – V/°C Reference to 25°C, ID = -1mA

J

Static Drain-to-Source On-Resistance – –– ––– 0.10 Ω VGS = -10V, ID = -10A 
Gate Threshold Voltage -2.0 ––– -4.0 V VDS = VGS, ID = -250µA
Forward Transconductance 4.2 ––– ––– S VDS = 25V, ID = -10A

Drain-to-Source Leakage Current

––– ––– -25

––– ––– -250 VDS = -44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 1 00 V
Gate-to-Source Reverse Leakage ––– ––– -100

VDS = -55V, VGS = 0V

µA

= 20V

GS

nA

VGS = -20V
Total Gate Charge ––– ––– 35 ID = -10A
Gate-to-Source Charge ––– –– – 7.9 nC VDS = -44V
Gate-to-Drain ("Miller") Charge ––– ––– 16 VGS = -10V, See Fig. 6 and 13 
Turn-On Delay Time ––– 13 ––– VDD = -28V
Rise Time ––– 55 ––– ID = -10A
Turn-Off Delay Time ––– 30 ––– RG = 13Ω

ns
Fall Time ––– 41 ––– RD = 2.6Ω, See Fig. 10 
Internal Drain Inductance

Internal Source Inductance ––– –––

4.5

––– –––

7.5

Between lead,
6mm (0.25in.)

nH

from package

and center of die contact
Input Capacitance ––– 620 ––– VGS = 0V
Output Capacitance ––– 280 – –– pF VDS = -25V
Reverse Transfer Capacitance –– – 140 ––– ƒ = 1.0MHz, See Fig. 5

D

G

S

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

 Starting T

RG = 25Ω, I

Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode) 

––– –––

––– –––

Diode Forward Voltage ––– ––– -1.6 V TJ = 25°C, IS = -10A, VGS = 0V 
Reverse Recovery Time ––– 54 82 ns TJ = 25°C, IF = -10A
Reverse RecoveryCharge ––– 110 160 nC di/dt = -100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

 I

SD

TJ ≤ 175°C

= 25°C, L = 3.6mH

J

= -10A. (See Figure 12)

AS

 Pulse width ≤ 300µs; duty cycle ≤ 2%.

-19

-68

showing the

A

p-n junction diode.

≤ -10A, di/dt ≤ -290A/µs, V

DD

≤ V

(BR)DSS

D

G

S



,

IRF9Z34N

100

VGS
TOP - 15V

- 10V

- 8.0V

- 7.0V

- 6.0V

- 5.5V

- 5.0V
BO T T OM - 4. 5V

10

D

-I , Drain-to-S ource C urrent (A)

-4.5V
20µs PULSE WIDTH
T = 25°C

1

0.1 1 10 100

-V , Drain -to -S o urc e V o ltag e ( V)

DS

100

c

100

VGS
TOP - 15V

- 10V

- 8.0V

- 7.0V

- 6.0V

- 5.5V

- 5.0V
BO T T OM - 4. 5V

10

D

-I , Drain-to-Source Current (A )

-4.5V

20µs PULSE WIDTH
T = 175°C

A

1

0.1 1 10 100

-V , Drain-to-So urc e V oltag e (V )

DS

C

A

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

2.0

I = -17A

D

T = 25°C

J

T = 175°C

J

10

D

-I , Dr a in-to - So u r c e C ur r e n t ( A)

1

45678910

-V , G ate -to -Sou rc e Vo l ta g e (V)

GS

V = -2 5 V

DS

20µs PULSE WIDTH

Fig 3. Typical Transfer Characteristics

1.5

1.0

(No rm a lized)

0.5

DS(on)

R , D rain -to-S ou rc e O n R e si stan ce

A

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

T , Ju nc tion Temperat ure ( °C )

J

V = -10V

GS

A

Fig 4. Normalized On-Resistance

Vs. Temperature

IRF9Z34N

1200

1000

800

600

400

C, C apacitance (pF)

200

0

1 10 100

V = 0V , f = 1 M Hz

GS

C = C + C , C SHORTE D

is s gs gd ds

C = C

rss gd

C = C + C

oss d s gd

C

iss

C

oss

C

rs s

-V , D rain- to-Sourc e Voltag e ( V)

DS

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

100

20

I = -10A

D

V = -44V

16

12

8

4

GS

DS

V = -28V

DS

-V , Ga te-to- So u rce V oltag e (V )

FOR TEST CIRCUIT

A

0

0 10203040

Q , Tota l Gate Ch arge (nC)

G

SEE FIGU RE 1 3

A

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

1000

O PERATION IN THIS A REA L IMITED
BY R

DS(on)

10

T = 17 5°C

J

T = 25 °C

J

1

SD

-I , R everse D rain Current (A )

0.1

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

-V , So urc e- to-Drain Voltag e ( V )

SD

V = 0V

Fig 7. Typical Source-Drain Diode

Forward Voltage

GS

100

10µs

100µs

10

D

-I , Dra in C u rren t (A)

T = 25° C

C

T = 175 ° C

J

A

Sin gle Pulse

1

1 10 100

-V , Drain-to-So urc e V olta ge (V )

DS

1ms

10ms

A

Fig 8. Maximum Safe Operating Area

IRF9Z34N

+

-

20

15

10

D

I , Drain Current (A)

5

0

25 50 75 100 125 150 175

T , Case Temperature ( C)

C

°

Fig 9. Maximum Drain Current Vs.

Case Temperature

10

R

V

DS

V

GS

R

G

D

D.U.T.

-10V

Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

V

GS

10%

90%
V

DS

t

d(on)tr

t

d(off)tf

Fig 10b. Switching Time Waveforms

V

DD

thJC

D = 0.50

1

0.20

0.10

0.05

0.1

0.02

0.01

SINGLE PULSE

(THERMAL RESPONSE)

Thermal Response (Z )

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

0.01

0.00001 0.0001 0.001 0.01 0.1

t , Rectangular Pulse Duration (sec)

1

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

J DM thJC C

1 2

P

DM

t

1

t

2

IRF9Z34N

L

D.U.T

I

AS

0.01

t

p

DRIVER

Ω

15V

V

DD

R

-20V

V

DS

G

Fig 12a. Unclamped Inductive Test Circuit

I

AS

t

p

V

(BR)DSS

500

I

D

TO P - 4.2A

-7.2A

400

A

300

200

100

AS

E , S in gle Pulse A valanche Energ y (m J)

0

25 50 75 100 125 150 175

Starting T , Junction Temperature (°C)

J

BOTTOM -10A

A

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Fig 12b. Unclamped Inductive Waveforms

Q

G

-10V

Q

GS

V

G

Q

GD

Charge

Fig 13a. Basic Gate Charge Waveform

Current Regulator

Same Type as D.U.T.

50KΩ

.2µF

12V

V

GS

.3µF

D.U.T .

-3mA

I

G

Current Sampling Resistors

­V

+

I

D

Fig 13b. Gate Charge Test Circuit

DS

IRF9Z34N

+

-

Peak Diode Recovery dv/dt Test Circuit

D.U.T*

+



Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance
Current Transformer

-

+



-



-

+



R

G

V

GS

• dv/dt controlled by R

G

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

V

DD

* Reverse Polarity of D.U.T for P-Channel

Driver Gate Drive

P.W.

Period

D =

P.W.

Period

[ ] ***

VGS=10V

Reverse
Recovery
Current

Re-Applied
Voltage

D.U.T. ISDWaveform

Body Diode Forward

Current

D.U.T. VDSWaveform

Body Diode Forward Drop

Inductor Curent

Ripple ≤ 5%

*** V

= 5.0V for Logic Level and 3V Drive Devices

GS

Fig 14. For P-Channel HEXFETS

di/dt

Diode Recovery

dv/dt

[ ]

V

DD

[ ]

I

SD

IRF9Z34N

Package Outline

TO-220AB Outline

Dimensions are shown in millimeters (inches)

1 0.54 (.41 5)

2.87 (.113)

2.62 (.103)

15.24 (.600)

14.84 (.584)

14.09 (.555)

13.47 (.530)

1.40 (.055)

3X

1.15 (.045)

2.54 (.100)

NOTES:
1 DIM E N S IO N IN G & TO L E R A N C ING P E R A N S I Y14 .5M , 198 2. 3 OU T L INE C O N F O R M S T O J E D E C OU T LINE TO -2 20 A B.
2 CO NTR OLLING DIME NSION : INCH 4 HEATSINK & LEAD MEAS UREMENTS D O NO T INCL UDE BURRS .

2X

1 0.29 (.40 5)

4

1 2 3

Part Marking Information

TO-220AB

EXAMPLE : THIS IS AN IRF1010

EXAMPLE : THIS IS AN IRF1010

W ITH ASSEMBLY

W ITH ASSEMBLY

LOT C O D E 9 B1 M

LOT C O D E 9 B1 M

3.78 (.149)

3.54 (.139)

- A -

6.4 7 (.255)

6.1 0 (.240)

1.15 (.0 4 5)
MIN

4.0 6 (.160)

3.5 5 (.140)

0.93 (.037)

3X

0.69 (.027)

0 .3 6 (.01 4) M B A M

INTERNATIONAL

INTERNATIONAL

R ECT IF IER

R ECT IF IER

LOG O

LOG O

ASSEMBLY

ASSEMBLY

LOT C O D E

LOT C O D E

4.69 (.185)

4.20 (.165)

- B -

1.32 (.052)

1.22 (.048)

2.92 (.115)

2.64 (.104)

IRF1010

IRF1010

9246

9246

9B 1 M

9B 1 M

LEAD ASSIGNMENTS
1 - G A TE
2 - DR A IN
3 - SOURCE
4 - DR A IN

0.5 5 (.022)

3X

0.4 6 (.018)

PART NUMBER

PART NUMBER

DATE CODE

DATE CODE

(YYWW)

(YYWW)

YY = YEAR

YY = YEAR

WW = WEEK

WW = WEEK

A

A

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http://www.irf.com/ Data and specifications subject to change without notice. 8/97