Datasheet IRF9132, IRF9130, IRF9133, IRF9131 Datasheet (Intersil)

Page 1
IRF9130
Data Sheet February 1999
-12A, -100V, 0.30 Ohm, P-Channel Power MOSFET
These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits.
Formerly developmental type TA17511.
Ordering Information
PART NUMBER PACKAGE BRAND
IRF9130 TO-204AA IRF9130
NOTE: When ordering, use the entire part number.
File Number
Features
• -12A, -100V
DS(ON)
= 0.30
•r
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
Symbol
D
G
S
2220.3
Packaging
DRAIN (FLANGE)
JEDEC TO-204AA
GATE (PIN 1)
SOURCE (PIN 2)
5-8
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999
Page 2
IRF9130
Absolute Maximum Ratings T
= 25oC, Unless Otherwise Specified
C
IRF9130 UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
TC= 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Maximum Power Dissipation (Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
DS
D D
DM
GS
D
-100 V
-100 V
-12
-7.5
-48 A
±20 V
75 W
A A
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 W/oC
Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ,T
AS
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
L
500 mJ
-55 to 150
300
o
C
o
C
NOTE:
1. TJ = 25oC to TJ = 125oC.
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV Gate Threshold Voltage V
GS(TH)VGS
Zero Gate Voltage Drain Current I
On-State Drain Current (Note 2) I
D(ON)VDS
Gate to Source Leakage Current I Drain to Source On Resistance (Note 2) r
DS(ON)ID
Forward Transconductance (Note 2) g
Turn-On Delay Time t
d(ON)VDD
Rise Time t Turn-Off Delay Time t
d(OFF)
Fall Time t Total Gate Charge
Q
g(TOT)VGS
(Gate to Source + Gate to Drain) Gate to Source Charge Q Gate to Drain “Miller” Charge Q Input Capacitance C Output Capacitance C Reverse Transfer Capacitance C Internal Drain Inductance L
Internal Source Inductance L
Thermal Resistance Junction to Case R Thermal Resistance Junction to Ambient R
DSSID
DSS
GSS
fs
r
f
gs gd
ISS OSS RSS
D
S
θJC
θJA
= -250µA, VGS = 0V, (Figure 10) -100 - - V
= VDS, ID = -250µA -2 - -4 V VDS = Rated BV VDS = 0.8 x Rated BV
> I
D(ON)
, VGS = 0V - - -25 µA
DSS
, VGS = 0V, TC = 125oC - - 250 µA
DSS
x r
DS(ON)MAX
, VGS = -10V -12 - - A
VGS = ±20V - - ±100 nA
= -6.5A, VGS = -10V, (Figures 8, 9) - 0.25 0.30
VDS > I
D(ON)
x r
DS(ON)MAX
, ID = -6.5A
2 3.7 - S
(Figure 12)
= 0.5 x Rated BV RL = 5.7 (Figures 17, 18) MOSFET Switching Times are Essentially Independent of Operating Temperature
, ID≈ -6.5A, RG = 50
DSS
-3060ns
- 70 140 ns
- 70 140 ns
- 70 140 ns
= -10V, ID = -15A, VDS = 0.8 x Rated BV I
= -1.5mA (Figures 14, 19, 20)
g(REF)
Gate Charge is Essentially Independent of Operating Temperature
DSS
-2545nC
-13-nC
-12-nC
VDS = -25V, VGS = 0V, f = 1MHz (Figure 11)
- 500 - pF
- 300 - pF
- 100 - pF
Measured Between the Contact Screw on the Flange that is Closer to Sourceand Gate Pins and the Center of Die
Measured From the Source Lead, 6mm (0.25in) From the Flange and the Source Bonding Pad
Modified MOSFET Symbol Showing the Internal Devices Inductances
D
L
D
G
L
S
S
- 5.0 - nH
- 12.5 - nH
- - 1.67oC/W
Typical Socket Mount - - 30
o
C/W
5-9
Page 3
IRF9130
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Continuous Source to Drain Current I Pulse Source to Drain Current
I
SDM
(Note 3)
Source to Drain Diode Voltage (Note 2) V Reverse Recovery Time t Reverse Recovery Charge Q
NOTES:
2. Pulse test: pulse width 300µs, duty cycle 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD= 25V, starting TJ= 25oC, L = 5.2mH, RG= 25Ω, peak IAS= 12A. See Figures 15, 16.
Modified MOSFET Symbol
SD
Showing the Integral Re-
D
verse P-N Junction Diode
G
S
TC = 25oC, ISD = -12A, VGS = 0V (Figure 13) - - -1.5 V
SD
TJ =150oC, ISD = -12A, dISD/dt = 100A/µs - 300 - ns
rr
TJ = 150oC, ISD = -12A, dISD/dt = 100A/µs - 1.8 - µC
RR
- - -12 A
- - -48 A
Typical Performance Curves
1.2
1.0
0.8
0.6
0.4
0.2
POWER DISSIPATION MULTIPLIER
0
0 25 50 75 100 150
TA, CASE TEMPERATURE (oC)
Unless Otherwise Specified
125
FIGURE 1. NORMALIZED POWERDISSIPATION vs CASE
TEMPERATURE
1
C/W)
0.5
o
-12.0
-9.6
-7.2
-4.8
, DRAIN CURRENT (A)
D
I
-2.4
0
25 75 125
50 100
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
150
0.2
0.1
0.1
0.05
0.02
THERMAL IMPEDANCE (
0.01 10
0.01 SINGLE PULSE
-5
, NORMALIZED TRANSIENT
θJC
Z
5-10
NOTES: DUTY FACTOR: D = t1/t PEAK TJ = PDM x Z
-4
10
-3
10
t1, RECTANGULAR PULSE DURATION (s)
-2
10
-1
10
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
P
DM
t
1
t
2
2
x R
θJC
+ T
C
10
θJC
1
Page 4
IRF9130
Typical Performance Curves
100
10
OPERATION IN THIS AREA
, DRAIN CURRENT (A)
1
D
I
T T SINGLE PULSE
0.1
IS LIMITED BY r
= 25oC
C
= MAX RATED
J
VDS, DRAIN TO SOURCE VOLTAGE (V)
DS(ON)
101
Unless Otherwise Specified (Continued)
-20
10µs
100µs
1ms
10ms 100ms DC
100
-16
-12
-8
, DRAIN CURRENT (A)
D
I
-4
0
0 -10 -20 -30 -40
VGS = -10V
, DRAIN TO SOURCE VOLTAGE (V)
V
DS
PULSE DURATION = 80µs
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS
-10
PULSE DURATION = 80µs
-8
-6
-4
, DRAIN CURRENT (A)
D
I
-2
0
0
VGS = -8V
VGS = -9V
VGS = -10V
-1 VDS, DRAIN TO SOURCE VOLTAGE (V)
VGS = -7V
VGS = -6V
VGS = -5V
VGS = -4V
-2 -3 -5
-4
-20
PULSE DURATION = 80µs
I
V
DS
-16
-12
-8
-4
, ON-STATE DRAIN CURRENT (A)
D(ON)
I
0
0 -2-4 -6-8-10
x r
D(ON)
DS(ON)MAX
TJ = 125oC
TJ = 25oC
= -55oC
T
J
V
, GATE TO SOURCE VOLTAGE (V)
GS
VGS = -9V
VGS = -8V
VGS = -7V
VGS = -6V
VGS = -5V
VGS = -4V
-50
FIGURE 6. SATURATION CHARACTERISTICS FIGURE 7. TRANSFER CHARACTERISTICS
1.0
0.8
0.6
0.4
, DRAIN TO SOURCE
ON RESISTANCE ()
0.2
DS(ON)
r
0
VGS= -10V
0
-10
-20
ID, DRAIN CURRENT (A)
PULSE DURATION = 2µs
VGS= -20V
-30 -40
NOTE: Heating effect of 2µs pulse is minimal.
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
5-11
-50
2.2 VGS = -10V, ID = -4A
1.8
1.4
1.0
ON RESISTANCE
0.6
NORMALIZED DRAIN TO SOURCE
0.2
-40 0 40 T
, JUNCTION TEMPERATURE (oC)
J
80
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
120
Page 5
IRF9130
Typical Performance Curves
1.25
1.15
1.05
0.95
BREAKDOWN VOLTAGE
0.85
NORMALIZED DRAIN TO SOURCE
0.75
-40 0 40 T
, JUNCTION TEMPERATURE (oC)
J
Unless Otherwise Specified (Continued)
80 120 160
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
5
4
3
2
, TRANSCONDUCTANCE (S)
1
fs
g
0 -4 -8 -12 -16
TJ = -55oC
ID, DRAIN CURRENT (A)
TJ = 25oC
TJ = 125oC
PULSE DURATION = 80µs
-20
1000
800
600
400
C, CAPACITANCE (pF)
200
0
0
C
ISS
C
OSS
C
RSS
V
-10
DS
-20
, DRAIN TO SOURCE VOLTAGE (V)
VGS= 0V, f = 1MHz C
= CGS + C
ISS
C
= C
RSS
C
CDS+ C
OSS
-30 -40
GD
GD
GD
-50
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
-100
-10
-1.0
, SOURCE TO DRAIN CURRENT (A)
SD
I
-0.1
-0.4
TJ = 150oC
TJ = 25oC
-0.8 -1.4
-1.0 -1.2 -1.6 -1.8-0.6
, SOURCE TO DRAIN VOLTAGE (V)
V
SD
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
0
-5 VDS = -80V
-10
, GATE TO SOURCE VOLTAGE (V)
GS
V
-15 0 8 16 24 32 40
VDS = -50V VDS = -20V
Q
, TOTAL GATE CHARGE (nC)
g(TOT)
ID = 15A
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
5-12
Page 6
IRF9130
Test Circuits and Waveforms
V
DS
VARY t
TO OBTAIN
P
REQUIRED PEAK I
0V V
GS
t
P
AS
L
R
G
-
V
DD
+
DUT
I
AS
0.01
0
V
DD
I
AS
t
P
FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS
BV
t
AV
DSS
V
DS
t
ON
t
d(ON)
t
R
L
DUT
R
V
GS
G
-
V
DD
+
0
V
DS
V
GS
0
10%
r
10%
90%
50%
PULSE WIDTH
FIGURE 17. SWITCHING TIME TEST CIRCUIT FIGURE 18. RESISTIVE SWITCHING WAVEFORMS
-V
DS
D
(ISOLATED SUPPLY)
DUT
0
V
DS
Q
gs
Q
gd
12V
BATTERY
0.2µF
50k
CURRENT
REGULATOR
0.3µF
t
d(OFF)
V
GS
t
OFF
50%
90%
90%
t
f
10%
Q
g(TOT)
S
CURRENT
I
D
SAMPLING
DUT
+V
DS
V
DD
0
I
G(REF)
G
0
I
g(REF)
IG CURRENT
SAMPLING
RESISTOR RESISTOR
FIGURE 19. GATE CHARGE TEST CIRCUIT FIGURE 20. GATE CHARGE WAVEFORMS
5-13
Page 7
IRF9130
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5-14
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