Page 1
l Ultra Low On-Resistance
l Dual P-Channel MOSFET
l Very Small SOIC Package
l Low Profile (< 1.2mm)
l Available in Tape & Reel
Description
HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that International Rectifier is well known for,
with an extremely efficient and reliable device for
battery and load management.
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.2mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
provides thedesigner
PD -93995A
IRF7755
HEXFET® Power MOSFET
V
DSS
-20V 51mΩ@VGS = -4.5V -3.7A
1
2
3
4
1 = D1
2 = S1
3 = S1
4 = G1
R
max I
DS(on)
86mΩ@VGS = -2.5V -2.8A
8
7
6
5
8 = D2
7 = S2
6 = S2
5 = G2
TSSOP-8
D
Absolute Maximum Ratings
Parameter Max. Units
V
DS
ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -3.9
ID @ TA = 70°C Continuous Drain Current, VGS @ -4.5V -3.1 A
I
DM
PD @TA = 25°C Maximum Power Dissipation 1W
P
= 70°C Maximum Power Dissipation 0.64 W
D @TA
Linear Derating Factor 0.01 W/°C
V
GS
TJ , T
STG
Drain-Source Voltage -20 V
Pulsed Drain Current -15
Gate-to-Source Voltage ±20 V
Junction and Storage Temperature Range -55 to +150 °C
Thermal Resistance
Parameter Max. Units
R
θJA
Maximum Junction-to-Ambient 125 °C/W
www.irf.com 1
4/9/01
Page 2
IRF7755
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage -20 –– – –– – V VGS = 0V, ID = -250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.011 ––– V/°C Reference to 25°C, ID = -1mA
J
Static Drain-to-Source On-Resistance
––– 35.3 51 VGS = -4.5V, ID = -3.7A
––– 44.3 86 VGS = -2.5V, ID = -2.8A
mΩ
Gate Threshold Voltage -0.45 ––– -1.2 V VDS = VGS, ID = -250µA
Forward Transconductance 7.0 ––– ––– S VDS = -10V, ID = -3.7A
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage ––– ––– -100 VGS = -12V
Gate-to-Source Reverse Leakage ––– – –– 100 VGS = 12V
––– ––– -15 VDS = -16V, VGS = 0V
––– ––– -25 VDS = -16V, VGS = 0V, TJ = 70°C
µA
nA
Total Gate Charge ––– 11 17 ID = -3.7A
Gate-to-Source Charge ––– 2.1 ––– nC VDS = -16V
Gate-to-Drain ("Miller") Charge ––– 3.5 ––– VGS = -4.5V
Turn-On Delay Time ––– 9 14 VDD = -10V, VGS = -4.5V
Rise Time ––– 13 20 ID = -1.0A
Turn-Off Delay Time ––– 89 133 RG = 6.0Ω
ns
Fall Time ––– 61 92 RD = 10Ω
Input Capacitance ––– 1090 ––– VGS = 0V
Output Capacitance ––– 18 2 ––– pF VDS = -15V
Reverse Transfer Capacitance ––– 124 ––– ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
––– –––
–––
–––
-1.0
-15
A
G
Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -1.0A, VGS = 0V
Reverse Recovery Time ––– 55 82 ns TJ = 25°C, IF = -1.0A
Reverse Recovery Charge ––– 29 43 nC di/dt = -100A/µs
Notes:
Repetitive rating; pulse width limited by
When mounted on 1 inch square copper board, t < 10sec.
max. junction temperature.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
2 www.irf.com
D
S
Page 3
IRF7755
100
10
1
, Drain-to-Source Current (A)
D
-I
-1.5V
20µs PULSE WIDTH
Tj = 25°C
0.1
0.1 1 10 100
-VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
VGS
TOP -7.5V
-4.5V
-3.5V
-3.0V
-2.5V
-2.0V
-1.75V
BOTTOM -1.5V
100
10
1
, Drain-to-Source Current (A)
D
-I
-1.5V
20µs PULSE WIDTH
Tj = 150°C
0.1
0.1 1 10 100
-VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.0
-3.9A
I =
D
VGS
TOP -7.5V
-4.5V
-3.5V
-3.0V
-2.5V
-2.0V
-1.75V
BOTTOM -1.5V
1.5
10
°
T = 150 C
J
°
T = 25 C
1
D
-I , Drain-to-Source Current (A)
0.1
1.0 1.5 2.0 2.5 3.0
-V , Gate-to-Source Voltage (V)
GS
J
V = -15V
DS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
GS
°
-4.5V
Vs. Temperature
www.irf.com 3
Page 4
IRF7755
1600
1200
800
C, Capacitance (pF)
400
0
1 10 100
V
=
0V,
GS
C
=
iss gs gd , ds
C
=
rss gd
C
=
oss ds gd
C
iss
C
oss
C
rss
-V , Drain-to-Source Voltage (V)
DS
f = 1MHz
C
+ C
C
C
C SHORTED
+ C
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
10
I =
-3.7A
D
8
6
4
2
GS
-V , Gate-to-Source Voltage (V)
0
0 4 8 12 16 20
Q , Total Gate Charge (nC)
G
V =-16V
DS
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10
°
T = 150 C
J
°
T = 25 C
1
SD
-I , Reverse Drain Current (A)
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4
-V ,Source-to-Drain Voltage (V)
SD
J
V = 0 V
GS
Fig 7. Typical Source-Drain Diode
10
1
D
-I , Drain Current (A)I , Drain Current (A)
°
= 25 C
C
T T= 150 C
Single Pulse
0.1
0.1 1 10 100
°
J
-V , Drain-to-Source Voltage (V)
DS
100us
1ms
10ms
Fig 8. Maximum Safe Operating Area
Forward Voltage
4 www.irf.com
Page 5
IRF7755
4.0
3.0
2.0
D
-I , Drain Current (A)
1.0
0.0
25 50 75 100 125 150
T , Case Temperature ( C)
C
°
Fig 9. Maximum Drain Current Vs.
Case Temperature
1000
R
D.U.T.
D
-
+
V
V
DS
V
GS
R
G
V
GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
GS
10%
90%
V
DS
t
d(on)tr
t
d(off)tf
Fig 10b. Switching Time Waveforms
DD
100
thJA
D = 0.50
0.20
0.10
10
0.05
P
0.02
0.01
1
Thermal Response (Z )
0.1
0.00001 0.0001 0.001 0.01 0.1 1 10 100
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =t / t
2. Peak T = P x Z + T
t , Rectangular Pulse Duration (sec)
1
J DM thJA A
DM
t
1 2
1
t
2
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com 5
Page 6
IRF7755
0.160
)
0.120
0.080
ID = -3.7A
0.040
, Drain-to -Source On Resistance (Ω
DS(on)
R
0.000
2.0 3.0 4.0 5.0 6.0 7.0 8.0
-V
Gate -to -Source Voltage (V)
GS,
Fig 12. Typical On-Resistance Vs.
Gate Voltage
0.200
)
Ω
0.150
0.100
0.050
, Drain-to-Source On Resistance (
DS ( on )
R
0.000
VGS = -2.5V
0 5 10 15
-ID , Drain Current ( A )
Fig 13. Typical On-Resistance Vs.
Drain Current
VGS = -4.5V
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
10 V
Q
G
Q
GS
V
G
Q
GD
12V
V
GS
.3µF
D.U.T.
-3mA
I
G
Current Sampling Resistors
V
DS
+
I
D
Charge
Fig 14a. Basic Gate Charge Waveform
Fig 14b. Gate Charge Test Circuit
6 www.irf.com
Page 7
EXAMPLE: THIS IS AN IRF7702
TSSOP-8 Part Marking Information
IRF7755
LOT CODE (XX)
PART NUMBER
DATE CODE EXAMPLES:
9503 = 5C
9532 = EF
XXYW
7702
DATE CODE (YW)
TABLE 1
W ORK WEEK 1-26, NUMERIC YEAR CODE (1,2, ....ETC.)
WORK
YWEEK
YEAR
1
2001
2002
2003
1994
1995
1996
1997
1998
1999
2000
WORK WEEK 27-52, ALPHANUMERIC YEAR CODE (A,B, ...ETC.)
YEAR
2001
2002
2003
1994
1995
1996
1997
1998
1999
2000 K
01
2
02
3C03
404
5
6
7
8
9
24
0
25
TABLE 2
WORK
Y
WEE K26W
AA27
B
28
C
29
D
30
E
F
G
H
J
50
51
52
W
A
B
D
X
Y
Z
B
C
D
X
Y
Z
TSSOP-8 Tape and Reel
8LT SSOP (MO-153AA)
16 mm
8 mm
FEED D I R ECTION
www.irf.com 7
Ø 13"
16mm
NOTE S :
1. TAPE & REEL OUT LINE CONFORMS TO EIA-481 & EIA-541.
Page 8
IRF7755
TSSOP-8 Package Outline
Data and specifications subject to change without notice.
This product has been designed and qualified for the consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 4/01
8 www.irf.com
Loading...