Datasheet IRF7726 Datasheet (International Rectifier)

l Ultra Low On-Resistance
l P-Channel MOSFET
l Very Small SOIC Package
l Low Profile (< 1.2mm)
l Available in Tape & Reel

Description

HEXFET
fier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the ruggedized device design,
that International Rectifier is well known for, provides
the designer with an extremely efficient and reliable
device for battery and load management.

®

Power MOSFETs from International Recti-

PD -94064

IRF7726

HEXFET® Power MOSFET

V

DSS

-30V 0.026@VGS = -10V -7.0A

1

S

2

S

3

S

4

R

max I

DS(on)

0.040@VGS = -4.5V -6.0A

A

8

D

7

D

6

D

5

DG

D

The new Micro8 package, with half the footprint area

Top V iew

MICRO-8

of the standard SO-8, provides the smallest footprint
available in an SOIC outline. This makes the Micro8
an ideal device for applications where printed circuit
board space is at a premium. The low profile (<1.2mm)
of the Micro8 will allow it to fit easily into extremely thin
application environments such as portable electronics
and PCMCIA cards.

Absolute Maximum Ratings

Parameter Max. Units

V

DS

ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -7.0
ID @ TA = 70°C Continuous Drain Current, VGS @ -10V -5.7 A
I

DM

PD @TA = 25°C Maximum Power Dissipation 1.79 W
PD @TA = 70°C Maximum Power Dissipation 1.14 W

Linear Derating Factor 0.01 W/°C

V

GS

TJ , T

STG

Drain-Source Voltage -30 V

Pulsed Drain Current -28

Gate-to-Source Voltage ±20 V

Junction and Storage Temperature Range -55 to +150 °C

Thermal Resistance

Parameter Max. Units

R

θJA

Maximum Junction-to-Ambient 70 °C/W

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IRF7726

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage -30 ––– ––– VVGS = 0V, ID = -250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.016 ––– V/°C Reference to 25°C, ID = -1mA

J

Static Drain-to-Source On-Resistance

––– ––– 0.026 VGS = -10V, ID = -7.0A 
––– ––– 0.040 VGS = -4.5V, ID = -6.0A 

Ω

Gate Threshold Voltage -1.0 ––– -2.5 V VDS = VGS, ID = -250µA
Forward Transconductance 10 ––– ––– SVDS = -10V, ID = -7.0A

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage ––– ––– -100 VGS = -20V
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 20V

––– ––– -15 VDS = -24V, VGS = 0V
––– ––– -25 VDS = -24V, VGS = 0V, TJ = 70°C

µA

nA

Total Gate Charge ––– 46 69 ID = -7.0A
Gate-to-Source Charge ––– 8.0 ––– nC VDS = -15V
Gate-to-Drain ("Miller") Charge ––– 8.1 ––– VGS = -10V
Turn-On Delay Time ––– 15 23 VDD = -15V, VGS = -10V
Rise Time ––– 25 38 ID = -1.0A
Turn-Off Delay Time ––– 227 341 RG = 6.0Ω

ns

Fall Time ––– 107 161 RD = 15Ω 
Input Capacitance ––– 2204 ––– VGS = 0V
Output Capacitance ––– 341 ––– pF VDS = -25V
Reverse Transfer Capacitance ––– 220 ––– ƒ = 1.0MHz

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode)  p-n junction diode.

––– –––

–––

–––

-1.8

-28

A

G

Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -1.8A, VGS = 0V 
Reverse Recovery Time ––– 35 53 ns TJ = 25°C, IF = -1.8A
Reverse Recovery Charge ––– 32 48 µC di/dt = -100A/µs



Notes:

 Repetitive rating; pulse width limited by

 When mounted on 1 inch square copper board, t < 10 sec.

max. junction temperature.

 Pulse width ≤ 400µs; duty cycle ≤ 2%.

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D

S

IRF7726

100

10

1

-2.5V

0.1

, Drain-to-Source Current (A)

D

-I

20µs PULSE WIDTH
Tj = 25°C

0.01

0.1 1 10 100

-VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

100

VGS

TOP -10.0V

-4.5V

-3.7V

-3.5V

-3.3V

-3.0V

-2.7V
BOTTOM -2.5V

100

10

-2.5V

1

, Drain-to-Source Current (A)

D

-I

20µs PULSE WIDTH
Tj = 150°C

0.1

0.1 1 10 100

-VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

2.0

-7.0A

I =



D

VGS

TOP -10.0V

-4.5V

-3.7V

-3.5V

-3.3V

-3.0V

-2.7V
BOTTOM -2.5V

°

T = 150 C



J

10

°

T = 25 C



1

D

-I , Drain-to-Source Current (A)

0.1

2.0 3.0 4.0 5.0 6.0

J

V = -15V

DS



20µs PULSE WIDTH

-V , Gate-to-Source Voltage (V)

GS

Fig 3. Typical Transfer Characteristics

1.5

1.0

(Normalized)

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature ( C)

J



Fig 4. Normalized On-Resistance

V =

GS

°

-10V

Vs. Temperature

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IRF7726

)

3200

2800

2400

2000

1600

1200

C, Capacitance (pF)

800

400

0

1 10 100

V

=

0V,

GS

C

=

iss gs gd , ds

C

=

rss gd



C

=

oss ds gd

C



iss

C



oss

C



rss

-V , Drain-to-Source Voltage (V)

DS

f = 1MHz

C

+ C
C
C

C SHORTED

+ C

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

100

°

T = 25 C



J

16

I =

-7.0A



D

14

12

10

8

6

4

GS

-V , Gate-to-Source Voltage (V)

2

0

0 10 20 30 40 50 60

Q , Total Gate Charge (nC)

G

V =-24V

DS



V =-15V

DS

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

100

OPERATION IN THIS AREA LIMITED



BY R

DS(on

°

T = 150 C



J

10

1

SD

-I , Reverse Drain Current (A)

V = 0 V



0.1

0.0 1.5 3.0 4.5 6.0

-V ,Source-to-Drain Voltage (V)

SD

GS

Fig 7. Typical Source-Drain Diode

10

D

-I , Drain Current (A)I , Drain Current (A)

°

= 25 C

C

T T= 150 C



Single Pulse

1

0.1 1 10 100

°

J

-V , Drain-to-Source Voltage (V)

DS

Fig 8. Maximum Safe Operating Area



100us



1ms



10ms

Forward Voltage

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IRF7726

8.0

6.0

4.0

D

-I , Drain Current (A)

2.0

0.0
25 50 75 100 125 150

T , Case Temperature( C)

C

°

Fig 9. Maximum Drain Current Vs.

Case Temperature

100

R

D.U.T.

D

-

+

V

DS

V

GS

R

G

V

GS

Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

V

GS

10%

90%
V

DS

t

d(on)tr

t

d(off)tf

Fig 10b. Switching Time Waveforms

V

DD

D = 0.50

thJA

Thermal Response (Z )

0.20

10

0.10

0.05

0.02

0.01

1

SINGLE PULSE



(THERMAL RESPONSE)

Notes:

1. Duty factor D = t / t



2. Peak T =P x Z + T

0.1

0.0001 0.001 0.01 0.1 1 10 100 1000

t , Rectangular Pulse Duration (sec)

1

J DM thJA A

P

DM

t



1 2

1

t

2

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

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IRF7726

0.070

)

Ω

0.060

0.050

0.040

ID = -7.0A

0.030

, Drain-to -Source On Resistance (

0.020

DS(on)

R

0.010

2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0

-V

Gate -to -Source Voltage (V)

GS,

Fig 12. Typical On-Resistance Vs.

Gate Voltage

0.120

)

Ω

0.080

VGS = -4.5V

0.040

, Drain-to-Source On Resistance (

DS ( on )

R

0.000
0 102030405060

-ID , Drain Current ( A )

Fig 13. Typical On-Resistance Vs.

Drain Current

VGS = -10V

Current Regulator

Same Type as D.U.T.

50KΩ

.2µF

10 V

Q

G

Q

GS

V

G

Q

GD

12V

V

GS

.3µF

D.U.T.

-3mA

I

G

Current Sampling Resistors

I

­V

DS

+

D

Charge

Fig 14a. Basic Gate Charge Waveform

Fig 14b. Gate Charge Test Circuit

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IRF7726

2.4

2.1

( V )

1.8

GS(th)

-V

1.5

1.2

-75 -50 -25 0 25 50 75 100 125 150

TJ , Temperature ( °C )

ID = -250µA

Fig 15. Typical Vgs(th) Vs.

Junction Temperature

150

120

90

Power (W)

60

30

0

0.001 0.010 0.100 1.000 10.000 100.000

Time (sec)

Fig 16. Typical Power Vs. Time

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IRF7726

Package Outline

Micro-8 Outline

Dimensions are shown in millimeters (inches)

D

3

- B -

3

- A -

- C ­B 8 X

NOTES:
1 DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
2 CONTROLLING DIMENSION : INCH.
3 DIMENSIONS DO NOT INCLUDE MOLD FLASH.

8 7 6 5

E

0.2 5 (.01 0 ) M A M

1 2 3 4

e

6X

e 1

A

A 1

0.0 8 (.0 0 3 ) M C A S B S

H

0.10 (.004)

Part Mar king Information

LEAD ASSIGNMEN TS

D D D D D1 D1 D2 D2

8 7 6 5

SINGLE

1 2 3 4

S S S G

θ

8 7 6 5

DUAL

1 2 3 4

S1 G1 S2 G2

L

8X

8X

IN CHES M ILL IM E TERS

DIM

M IN M A X M IN MAX
A .0 3 6 .0 4 4 0.9 1 1 .1 1
A1 .0 0 4 .0 0 8 0.1 0 0 .2 0
B .0 1 0 .0 1 4 0.2 5 0 .3 6
C .005 .007 0.13 0.18
D .116 .120 2.95 3.05
e .0256 BASIC 0.65 BASIC
e1 .0128 BASIC 0.33 BASIC
E .1 1 6 .1 2 0 2.9 5 3 .0 5
H .188 .198 4.78 5 .03
L .0 1 6 .0 26 0 .4 1 0 .66

0 ° 6° 0 ° 6°

θ

RECOMMENDED FOOTPRINT

1.04
( .041 )

C

8X

3.20
( .126 )

0.38
( .015 )

4.24
( .167 )

0.65
( .0256 )

8X

6X

5.28
( .208 )

Micro-8

EXA M P L E : TH IS IS A N IR F 7 5 0 1

DATE CO DE (YW W)
Y = LAST D IGIT OF YEAR
W W = WEEK

451
7501

PART NUMBER

TOP

8 www.irf.com

A

Tape & Reel Information

(

)

)

)

)

)

)

)

Micro-8

Dimensions are shown in millimeters (inches)

TERMINAL NUMBER 1

12.3 ( .484

11.7 ( .461

IRF7726

8.1 ( .318

7.9 ( .312

NOTES:

1. OUTLINE CON FOR M S TO EIA-481 & EIA-541.

2. CONTROLLING DIMENSION : M ILLIMETER.

330.00

12.992

MAX.

NOTES :

1. CONTR OLLING DIMENSIO N : MILLIMETER.

2. O U TLINE CONFO R MS TO EIA-481 & EIA-541.

Data and specifications subject to change without notice.

This product has been designed and qualified for the commercial market.

FEED DIRECTION

14.40 ( .566

12.40 ( .488

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: [phone]

TAC Fax: [phone]

Visit us at www.irf.com for sales contact information.12/00

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