Datasheet IRF7526D1 Datasheet (International Rectifier)

PD -91649C

IRF7526D1

TM

1

2

3

4

Top View

8

K

V

= -30V

R

DS(on)

DSS

= 0.20Ω

7

K

6

D

5

D

Schottky Vf = 0.39V

l Co-packaged HEXFET



MOSFET and Schottky Diode

l P-Channel HEXFET
l Low V
l Generation 5 Technology
l Micro8

Schottky Rectifier

F

TM

Footprint

Description

Power

FETKY MOSFET & Schottky Diode

A

A

S

G

The FETKYTMfamily of co-packaged HEXFETs and Schottky diodes offer the
designer an innovative board space saving solution for switching regulator
applications. Generation 5 HEXFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area. Combining this technology
with International Rectifier's low forward drop Schottky rectifiers results in an
extremely efficient device suitable for use in a wide variety of portable electronics
applications like cell phone, PDA, etc.

The new Micro8
the smallest footprint available in an SOIC outline. This makes the Micro8TM an ideal
device for applications where printed circuit board space is at a premium. The low
profile (<1.1mm) of the Micro8

TM

package, with half the footprint area of the standard SO-8, provides

TM

will allow it to fit easily into extremely thin application

Micro8

TM

environments such as portable electronics and PCMCIA cards.

Absolute Maximum Ratings

Parameter Maximum Units

ID @ TA = 25°C -2.0
ID @ TA = 70°C -1.6
I

DM

PD @TA = 25°C 1.25
PD @TA = 70°C 0.8

V

GS

dv/dt Peak Diode Recovery dv/dt ➁ -5.0 V/ns
T

J, TSTG

Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current ➀ -16
Power Dissipation
Linear Derating Factor 10 mW/°C

Gate-to-Source Voltage ± 20 V

Junction and Storage Temperature Range -55 to +150 °C

A

W

Thermal Resistance Ratings

Parameter Maximum Units

R

θJA

Notes:

Junction-to-Ambient ➃ 100 °C/W

 Repetitive rating – pulse width limited by max. junction temperature (see Fig. 9)
 I

≤ -1.2A, di/dt ≤ 160A/µs, V

SD

DD

≤ V

(BR)DSS

, TJ ≤ 150°C

 Pulse width ≤ 300µs – duty cycle ≤ 2%
 When mounted on 1 inch square copper board to approximate typical multi-layer PCB thermal resistance

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5/7/99

IRF7526D1

MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

MOSFET Source-Drain Ratings and Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

Schottky Diode Maximum Ratings

I

F(av)

I

SM

Schottky Diode Electrical Specifications

V

FM

I

RM

C

t

dv/dt Max. Voltage Rate of Charge 3600 V/µs Rated V

( HEXFET is the reg. TM for International Rectifier Power MOSFET's )

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Drain-to-Source Breakdown Voltage -30 ––– ––– V VGS = 0V, ID = -250µA
Static Drain-to-Source On-Resistance

––– 0.17 0.20 VGS = -10V, ID = -1.2A 
––– 0.30 0.40 VGS = -4.5V, ID = -0.60A 

Ω

Gate Threshold Voltage -1.0 ––– ––– V VDS = VGS, ID = -250µA
Forward Transconductance 0.94 ––– ––– S VDS = -10V, ID = -0.60A

Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage ––– ––– -100 VGS = -20V

Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 20V

––– ––– -1.0 VDS = -24V, VGS = 0V
––– ––– -25 VDS = -24V, VGS = 0V, TJ = 125°C

µA

nA

Total Gate Charge ––– 7.5 11 ID = -1.2A
Gate-to-Source Charge ––– 1.3 1.9 nC VDS = -24V
Gate-to-Drain ("Miller") Charge ––– 2.5 3.7 VGS = -10V, See Fig. 6 
Turn-On Delay Time ––– 9.7 ––– VDD = -15V
Rise Time ––– 12 ––– ID = -1.2A
Turn-Off Delay Time ––– 19 ––– RG = 6.2Ω

ns

Fall Time ––– 9.3 ––– RD = 12Ω, 
Input Capacitance ––– 180 ––– VGS = 0V
Output Capacitance ––– 87 ––– pF VDS = -25V
Reverse Transfer Capacitance ––– 42 ––– ƒ = 1.0MHz, See Fig. 5

Parameter Min. Typ. Max. Units Conditions
Continuous Source Current(Body Diode) ––– – –– -1.25
Pulsed Source Current (Body Diode) ––– ––– -9.6

A

Body Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -1.2A, VGS = 0V
Reverse Recovery Time (Body Diode) ––– 30 45 ns TJ = 25°C, IF = -1.2A
Reverse Recovery Charge ––– 37 55 nC di/dt = 100A/µs



Parameter Max. Units Conditions

Max. Average Forward Current 1.9 50% Duty Cycle. Rectangular Wave, TA = 25°C

A

1.3 TA = 70°C

See Fig. 14
Max. peak one cycle Non-repetitive 120 5µs sine or 3µs Rect. pulse Following any rated
Surge current 11 10ms sine or 6ms Rect. pulse load condition &

A

with V

RRM

applied

Parameter Max. Units Conditions

Max. Forward voltage drop 0.50 IF = 1.0A, TJ = 25°C

0.62 IF = 2.0A, TJ = 25°C
V

0.39 IF = 1.0A, TJ = 125°C

0.57 IF = 2.0A, TJ = 125°C.

Max. Reverse Leakage current 0.06 VR = 30V TJ = 25°C

mA

16 TJ = 125°C

Max. Junction Capacitance 92 p F VR = 5Vdc ( 100kHz to 1 MHz) 25°C

R

A

A

A

A

Power Mosfet Characteristics

IRF7526D1

10

VGS
TOP - 15V

- 10V

- 7.0V

- 5.5V

- 4.5V

- 4.0V

- 3.5V
BOTTOM - 3.0V

1

D

-I , Drain-to-Source Current (A)

-3.0 V

20µs PULSE WIDTH
T = 25°C

0.1

0.1 1 10

-V , Drain-to-Source Voltage (V)

DS

J

Fig 1. Typical Output Characteristics

10

T = 25°C

J

10

VGS
TOP - 15V

- 10V

- 7.0V

- 5.5V

- 4.5V

- 4.0V

- 3.5V
BOTTOM - 3.0V

1

-3.0 V

D

-I , Drain-to-Source Current (A)

20µs PULSE WIDTH
T = 150°C

0.1

0.1 1 10

-V , Drain-to-Source Voltage (V)

DS

J

Fig 2. Typical Output Characteristics

2.0

I = -1.2A

D

1.5

T = 150°C

J

1

1.0

(Norm a li zed )

0.5

D

-I , D rain- to-S o urc e C u rre nt (A )

0.1

3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0

-V , G ate -to-S o u rce Vo lta ge (V )

GS

V = - 1 0V

DS

20µs PULSE WIDTH

Fig 3. Typical Transfer Characteristics

DS (on)

R , D r a in-to -S o u rc e O n R e s is ta nc e

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , J unc tion T emp eratur e (°C )

J

Fig 4. Normalized On-Resistance

V = - 10 V

GS

Vs. Temperature

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IRF7526D1

A

)

g

A

)

A

)

A

Power Mosfet Characteristics

400

300

200

C, Capacitance (pF)

100

0

1 10 100

V = 0V , f = 1 M Hz

GS

C = C + C , C S H O RTED

is s gs gd ds

C = C

rs s gd

C = C + C

oss ds gd

C

iss

C

oss

C

rss

-V , Dra in -to -So urce Volt age (V

DS

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

10

20

I = -1 .2A

D

V = - 24 V

16

12

GS

8

4

DS

V = - 15 V

DS

-V , Gate -to -S o u rc e Vo ltag e (V )

FOR TEST CIRCU IT

0

024681012

Q , To ta l Ga te Ch arge (nC

G

SE E F IG U R E 9

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

100

OP ER A T IO N IN T HIS A R EA L IM IT E D
BY R

DS(on)

10

T = 150°C

J

1

T = 25°C

J

SD

-I , Rev ers e D ra in C urre nt (A )

0.1

0.4 0.6 0.8 1.0 1.2 1.4

-V , Source-to-Drain Voltage (V)

SD

V = 0V

Fig 7. Typical Source-Drain Diode

GS

1

D

-I , Drain C urren t (A )

T = 25 °C

A

T = 15 0 °C

J

Sin

0.1

le Pulse

1 10 100

-V , Dra in -to -So urce Volt age (V

DS

Fig 8. Maximum Safe Operating Area

100µs

1ms

10ms

Forward Voltage

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IRF7526D1

A

A

Power Mosfet Characteristics

1000

100

thJC

D = 0.50

0.20

0.10

10

0.05

0.02

0.01

1

Thermal Response (Z )

0.1

0.00001 0.0001 0.001 0.01 0.1 1 10 100

SINGLE PULSE

(THERMAL RESPONSE)

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

t , Rectangular Pulse Duration (sec)

1

J DM thJC C

Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

1 2

P

DM

t

1

t

2

1.5

1.0

VGS = -4.5V

0.5

(on) , Drain-to-Source On Resistance (Ω)

DS

R

0.0
01234

-I , Drain Current (A)

D

VGS = -10V

Fig 10. Typical On-Resistance Vs. Drain

Current

0.60

0.50

0.40

I = -2.0A

0.30

0.20

(on) , Drain-to-Source On Resistance (Ω)

DS

R

0.10
3 6 9 12 15

-V , Gate -to - S o u rce V o l ta ge (V)

GS

Fig 11. Typical On-Resistance Vs. Gate

Voltage

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IRF7526D1

g

)

A

)

)

Schottky Diode Characteristics

10

(mA)

R

100

10

0.1

0.01

1

T = 150°C

J

125°C
100°C

75°C
50°C

25°C

F

1

T = 1 50°C

J

T = 1 25°C

J

T = 25 °C

J

Instantaneous Forward C urrent - I (A)

0.001

Reverse Current - I

0.0001
0 5 10 15 20 25 30

Reverse Volta

e - V (V

Fig. 13 - Typical Values of Reverse

Current Vs. Reverse Voltage

160

140

120

100

V = 80% Rated

r

R = 10 0° C /W

thJA

Sq uare w a ve

R

80

D = 3/4

60

D = 1/2
D =1/3

40

D = 1/4

0.1

0.0 0.2 0.4 0.6 0.8 1.0

Forward Voltage Drop - V (V

Forward Voltage Drop - VF (V)

FM

D = 1/5

20

0

Allowable Am b ient Temperature - (°C)

0.0 0.5 1.0 1.5 2.0 2.5 3.0

Average Fo r wa rd C u rr e n t - I (A

DC

F(AV)

Fig. 12 -Typical Forward Voltage Drop

Characteristics

Fig.14 - Maximum Allowable Ambient

Temp. Vs. Forward Current

6 www.irf.com

A

Micro8TM Package Details

D

3

- B -

8 7 6 5

3

E

- A ­1 2 3 4

e

6X

- C ­B 8X

0.08 (.003) M C A S B S

NOTES:
1 DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
2 CONT R OLLIN G DIMEN SION : INCH.
3 DIMENSIONS DO NOT INCLUDE MOLD FLASH.

e 1

A 1

H

0.25 (.010) M A M

A

0.10 (.004)

Part Marking

LEAD ASSIGNMENTS

D D D D D1 D1 D2 D2

8 7 6 5

SINGLE

1 2 3 4

S S S G S 1 G 1 S2 G2

θ

8 7 6 5

DUAL

1 2 3 4

L

8X

INCH ES MILLIME TE RS

DIM

MIN MAX MIN MAX
A .036 .044 0.91 1.11
A1 .004 .008 0.10 0.20
B .010 .014 0.25 0.36
C .005 .007 0.13 0.18
D .116 .120 2.95 3.05
e .0256 BASIC 0.65 BASIC
e1 .0128 BASIC 0.33 BASIC
E .116 .120 2.95 3.05
H .188 .198 4.78 5.03
L .016 .026 0.41 0.66

θ

0° 6° 0° 6°

RECOMMENDED FOOTPRINT

1.04
( .041 )
8X

C

8X

3.20
( .126 )

0.38
( .015 )

4.24
( .167 )

0.65
( .0256 )

IRF7526D1

8X

5.28
( .208 )

6X

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IRF7526D1

Micro8

TM

Tape & Reel

TERMINAL NUMBER 1

8.1 ( .318 )

7.9 ( .312 )

NOT ES:

1. OUTLINE CONFO R M S TO E IA-4 81 & E IA-541.

2. CONTROLLING DIMENSIO N : MILLIMETER.

330.00
(12.992)
MAX.

12.3 ( .484 )

11.7 ( .461 )

FEED DIRECTION

14.40 ( .566 )

12.40 ( .488 )

NOTES :

1. CONTROLLING DIMENSION : MILLIMETER.

2. OUT LINE CO NFO R M S TO EIA-481 & EIA-541.

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http://www.irf.com/ Data and specifications subject to change without notice . 5/99

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