Datasheet IRF7503 Datasheet (International Rectifier)

l Generation V Technology
l Ultra Low On-Resistance
l Dual N-Channel MOSFET
l Very Small SOIC Package
l Low Profile (<1.1mm)
l Available in Tape & Reel
l Fast Switching

Description

Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.

S1

G1

S2

G2

1

2

3

4

To p V iew

PD - 9.1266G

IRF7503

HEXFET® Power MOSFET

8

D1

V

7

D1

6

D2

5

D2

R

DS(on)

= 30V

DSS

= 0.135Ω

The new Micro8 package, with half the footprint area of the
standard SO-8, provides the smallest footprint available in

Micro8

an SOIC outline. This makes the Micro8 an ideal device for
applications where printed circuit board space is at a
premium. The low profile (<1.1mm) of the Micro8 will allow
it to fit easily into extremely thin application environments
such as portable electronics and PCMCIA cards.

Absolute Maximum Ratings

Parameter Max. Units

ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 2.4
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 1.9 A
I

DM

PD @TA = 25°C Power Dissipation 1.25 W

V

GS

dv/dt Peak Diode Recovery dv/dt  5.0 V/ns
T

J, TSTG

Pulsed Drain Current  14

Linear Derating Factor 10 mW/°C
Gate-to-Source Voltage ± 20 V

Junction and Storage Temperature Range -55 to + 150 °C

Thermal Resistance

Parameter Typ. Max. Units

R

θJA

All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective

only for product marked with Date Code 505 or later .

Maximum Junction-to-Ambient ––– 100

°C/W

8/25/97

IRF7503

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 20V

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.059 ––– V/°C Reference to 25°C, ID = 1mA

J

Static Drain-to-Source On-Resistance

––– ––– 0.135 VGS = 10V, ID = 1.7A 
––– ––– 0.222 VGS = 4.5V, ID = 0.85A 

Ω

Gate Threshold Voltage 1.0 ––– ––– V VDS = VGS, ID = 250µA
Forward Transconductance 1.9 ––– ––– S VDS = 10V, ID = 0.85A

Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage ––– ––– -100 VGS = -20V

––– ––– 1.0 VDS = 24V, VGS = 0V
––– ––– 25 VDS = 24V, VGS = 0V, TJ = 125°C

µA

nA

Total Gate Charge ––– 7.8 12 ID = 1.7A
Gate-to-Source Charge ––– 1.2 1.8 nC VDS = 24V
Gate-to-Drain ("Miller") Charge ––– 2.5 3.8 VGS = 10V, See Fig. 6 and 9 
Turn-On Delay Time ––– 4.7 –– – VDD = 15V
Rise Time ––– 10 ––– ID = 1.7A
Turn-Off Delay Time ––– 12 ––– RG = 6.1Ω

ns

Fall Time ––– 5.3 ––– RD = 8.7Ω, See Fig. 10 
Input Capacitance ––– 210 ––– VGS = 0V
Output Capacitance ––– 80 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 32 ––– ƒ = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

 I

SD

TJ ≤ 150°C

Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode)  p-n junction diode.

––– ––– 1.25

––– ––– 14

Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 1.7A, VGS = 0V 
Reverse Recovery Time ––– 40 60 ns TJ = 25°C, IF = 1.7A
Reverse RecoveryCharge ––– 48 7 2 nC di/dt = 100A/µs

 Pulse width ≤ 300µs; duty cycle ≤ 2%.

≤ 1.7A, di/dt ≤ 120A/µs, V

DD

≤ V

(BR)DSS

,

 Surface mounted on FR-4 board, t

D

A



≤ 10sec.

G

S

IRF7503

100

VGS
TOP 15V
10V

7.0V

5.5V

4.5V

4.0V

3.5V
BOTT OM 3.0V

10

1

3.0V

D

I , Drain-to-Source C urrent (A)

20µs PULSE WIDT H
T = 25 °C

0.1

0.1 1 10

V , Drain-to-Source Voltage (V)

DS

J

Fig 1. Typical Output Characteristics

100

100

VGS
TOP 15V
10V

7.0V

5.5V

4.5V

4.0V

3.5V
BOTT OM 3.0V

10

1

D

I , Drain-to-S ource C urrent (A)

3.0V

20µs PULSE WIDT H
T = 150°C

A

0.1

0.1 1 10

V , Drain-to -Sou rce Vo ltage ( V)

DS

J

A

Fig 2. Typical Output Characteristics

2.0

I = 1.7 A

D

T = 25°C

10

1

D

I , Dr a in-to - Sou r ce C u rr en t ( A)

0.1

3.0 3.5 4.0 4.5 5.0 5.5 6.0

V , Ga te-to-So urce Voltage (V)

GS

J

T = 150°C

J

V = 10V

DS

20µs PULSE W IDTH

Fig 3. Typical Transfer Characteristics

1.5

1.0

(No rm alized)

0.5

DS(on)

R , Dra in-to -S ourc e O n R e sista n ce

A

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Ju nc tio n T em perat u re ( °C )

J

V = 1 0V

GS

A

Fig 4. Normalized On-Resistance

Vs. Temperature

IRF7503

400

300

200

C, C apac itance (pF)

100

0

1 10 100

V = 0V , f = 1 MH z

GS

C = C + C , C S HORTE D

iss gs gd ds

C = C

rss gd

C = C + C

oss ds gd

C

iss

C

oss

C

rs s

V , Drai n-to -Sourc e Voltage ( V)

DS

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

100

20

I = 1.7A

V , Gate- to -S ou rce V oltag e (V)

16

12

8

4

GS

D

V = 2 4V

DS

V = 1 5V

DS

FOR TEST CIRCUIT

A

0

024681012

Q , Total Ga te Ch arg e (nC)

G

SEE FIGURE 9

A

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

100

O PER AT ION IN T HIS AREA LIMI TED
BY R

DS(on)

10

T = 150°C

J

T = 25°C

1

SD

I , Rev ers e Dr ain C u rren t (A)

0.1

0.4 0.8 1.2 1.6 2.0

V , Source-to-Drain Voltage (V)

SD

J

V = 0V

GS

Fig 7. Typical Source-Drain Diode

Forward Voltage

10

1

D

I , Drain Cu rrent (A )

T = 25°C

A

T = 150°C

J

A

Single Pulse

0.1
1 10 100

V , Drain-to-So urc e Vo ltag e (V)

DS

10µs

100µs

1ms

10ms

A

Fig 8. Maximum Safe Operating Area

+

-

10V

V

IRF7503

R

D.U.T.

D

V

DD

V

Q

G

Q

GS

Q

GD

R

DS

V

GS

G

G

10V

Pulse Width ≤ 1 µs

Charge

Duty Factor ≤ 0.1 %

Fig 9a. Basic Gate Charge Waveform

Current Regulator

Same Type as D.U.T.

50KΩ

.2µF

12V

.3µF

D.U.T .

+

V

DS

-

Fig 10a. Switching Time Test Circuit

V

DS

90%

10%

V

GS

3mA

I

G

Current Sampling Resistors

I

D

Fig 9b. Gate Charge Test Circuit

1000

100

thJA

D = 0.50

0.20

0.10

10

0.05

0.02

0.01

1

Thermal Response (Z )

0.1

0.00001 0.0001 0.001 0.01 0.1 1 10 100

SINGLE PULSE

(THERMAL RESPONSE)

t , Rectangular Pulse Duration (sec)

1

V

GS

t

d(on)tr

t

d(off)tf

Fig 10b. Switching Time Waveforms

P

DM

t

1

t

2

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

1 2

J DM thJA A

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

IRF7503

+

-

Peak Diode Recovery dv/dt Test Circuit

+





D.U.T

-

R

G

Driver Gate Drive

P.W.

+

Circuit Layout Considerations

• Low Stray Inductance



• Ground Plane

• Low Leakage Inductance
Current Transformer

-

• dv/dt controlled by R

• Driver same type as D.U.T.

controlled by Duty Factor "D"

• I

SD

• D.U.T. - Device Under Test

Period

-

D =



G

Period

P.W.

+

V

DD

VGS=10V

*

Reverse
Recovery
Current

Re-Applied
Voltage

D.U.T. ISDWaveform

Body Diode Forward

D.U.T. VDSWaveform

Body Diode Forward Drop

Inductor Curent

Ripple ≤ 5%

* V

= 5V for Logic Level Devices

GS

Fig 12. For N-Channel HEXFETS

Current

di/dt

Diode Recovery

dv/dt

V

DD

I

SD

Package Outline

Micro8 Outline

Dimensions are shown in millimeters (inches)

IRF7503

D

3

- B -

3

- A -

- C ­B 8X

NOTES:
1 DIM E N SIONING AND TO LER AN C ING PER AN SI Y14.5M-1982.
2 CONTROLLING DIMENSION : INCH.
3 DIME N S IO NS DO NO T INCL UDE MO LD F L A S H.

8 7 6 5

E

0.25 (.010) M A M

1 2 3 4

e

6X

e 1

A

A 1

0.08 ( .0 0 3) M C A S B S

Part Marking Information

Micro8

H

0. 10 (.00 4)

LEAD ASSIGNM ENTS

D D D D D1 D1 D2 D2

8 7 6 5 8 7 6 5

SINGLE

1 2 3 4

S S S G

θ

L

8X

DUAL

1 2 3 4

S1 G1 S2 G2

8X

IN C H E S M IL L IM E T E R S

DIM

M IN M AX M IN M AX
A .036 .044 0.91 1.11
A1 .004 .008 0.10 0.20
B .010 .014 0.25 0.36
C .005 .007 0.13 0.18
D .116 .120 2.95 3.05
e .0256 BASIC 0.65 BASIC
e1 .0128 BASIC 0.33 BA SIC
E .116 .120 2.95 3.05
H .188 .198 4.78 5.03
L .016 .026 0.41 0.66

θ

0 ° 6 ° 0° 6 °

RECOMMENDED FOOTPRINT

1.04
( .041 )

C

8 X

3.20
( .126 )

0.38
( .015 )

4. 2 4
( .167 )

0 . 6 5
( .0256 )

6X

8X

5.28
( .208 )

EX AMP LE : T HIS IS A N IRF7501

PART NUM BER

451
7501

TOP

DATE CODE (YW W)

A

Y = LA ST D IG IT O F YE A R
W W = WEEK

IRF7503

Tape & Reel Information

Micro8

Dimensions are shown in millimeters (inches)

TERMINAL NUMBER 1

12.3 ( .484 )

11.7 ( .461 )

8.1 ( .318 )

7.9 ( .312 )

NOTES:

1. O U TL INE CO N FORM S TO EIA-481 & EIA-541.

2. CONTRO LLING DIMENSION : MILLIME TER.

330.00
(12.992)
MAX.

NOTES :

1. CONTROLLING DIMENSION : MILLIMETER.

2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

FEED DIRECTION

14.40 ( .566 )

12.40 ( .488 )

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: [phone]

EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020

IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: [phone]

IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111

IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: [phone]

IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: [phone]

http://www.irf.com/ Data and specifications subject to change without notice. 8/97