Datasheet IRF7465 Datasheet (International Rectifier)

SMPS MOSFET

A

PD-93896

IRF7465

HEXFET® Power MOSFET

Applications

l High frequency DC-DC converters

V

DSS

150V 0.28

R

DS(on)

ΩΩ

Ω@V

ΩΩ

max I

= 10V 1.9A

GS

D

Benefits

l Low Gate to Drain Charge to Reduce

Switching Losses

l Fully Characterized Capacitance Including

Effective C

to Simplify Design (See

OSS

App. Note AN1001)

l Fully Characterized Avalanche Voltage

and Current

S

1

2

3

4

Top V iew

A

8

D

7

D

6

D

5

DG

SO-8

Absolute Maximum Ratings

Parameter Max. Units

ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 1.9 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 1.5 A I

DM

PD @TA = 25°C Power Dissipation 2.5 W

V

GS

dv/dt Peak Diode Recovery dv/dt  7.8 V/ns T

J

T

STG

Pulsed Drain Current  15

Linear Derating Factor 0.02 W/°C Gate-to-Source Voltage ± 30 V

Operating Junction and -55 to + 150 Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )

°C

Thermal Resistance

Symbol Parameter Typ. Max. Units

R

θJL

R

θJA

Junction-to-Drain Lead ––– 20 Junction-to-Ambient  ––– 50 °C/W

Notes  through  are on page 8

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2/8/01

IRF7465

Static @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

I

DSS

I

GSS

Dynamic @ TJ = 25°C (unless otherwise specified)

g

fs

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

C

oss

C

oss

C

eff. Effective Output Capacitance ––– 76 ––– VGS = 0V, VDS = 0V to 120V 

oss

Drain-to-Source Breakdown Voltage 150 ––– ––– VVGS = 0V, ID = 250µA

/∆T

Breakdown Voltage Temp. Coefficient

J

––– 0.19 ––– V/°C Reference to 25°C, ID = 1mA  Static Drain-to-Source On-Resistance ––– ––– 0.28 Ω VGS = 10V, ID = 1.14A  Gate Threshold Voltage 3.0 ––– 5.5 V VDS = VGS, ID = 250µA

Drain-to-Source Leakage Current

––– ––– 25 ––– ––– 250 VDS = 120V, VGS = 0V, TJ = 125°C

Gate-to-Source Forward Leakage ––– ––– 100 V Gate-to-Source Reverse Leakage ––– ––– -100

VDS = 150V, VGS = 0V

µA

= 30V

GS

nA

V

= -30V

GS

Parameter Min. Typ. Max. Units Conditions Forward Transconductance 0.75 ––– ––– SVDS = 50V, ID = 1.14A Total Gate Charge ––– 10 15 ID = 1.14A Gate-to-Source Charge ––– 2.7 4.0 nC VDS = 120V Gate-to-Drain ("Miller") Charge ––– 5.0 7.5 VGS = 10V Turn-On Delay Time ––– 7.0 ––– VDD = 75V Rise Time ––– 1.2 ––– ID = 1.14A Turn-Off Delay Time ––– 10 ––– RG = 6.0Ω

ns

Fall Time ––– 9.0 ––– VGS = 10V  Input Capacitance ––– 330 ––– VGS = 0V Output Capacitance ––– 80 ––– VDS = 25V Reverse Transfer Capacitance ––– 16 ––– pF ƒ = 1.0MHz Output Capacitance ––– 420 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz Output Capacitance ––– 41 ––– VGS = 0V, VDS = 120V, ƒ = 1.0MHz

Avalanche Characteristics

Parameter Typ. Max. Units

E

AS

I

AR

Single Pulse Avalanche Energy ––– 40 mJ Avalanche Current ––– 1.9 A

Diode Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

Continuous Source Current MOSFET symbol (Body Diode) Pulsed Source Current integral reverse (Body Diode) 

––– –––

2.3

15

showing the

A

p-n junction diode.

G

Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 1.14A, VGS = 0V  Reverse Recovery Time ––– 62 93 ns TJ = 25°C, IF = 1.14A Reverse RecoveryCharge ––– 160 240 nC di/dt = 100A/µs



2 www.irf.com

D

S

IRF7465

100

10

1

, Drain-to-Source Current (A)

D

I

VGS TOP 15V 12V 10V

8.0V

7.5V

7.0V

6.5V BOTTOM 6.0V

6.0V

20µs PULSE WIDTH Tj = 25°C

0.1

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

100

10

VGS TOP 15V 12V 10V

8.0V

7.5V

7.0V

6.5V BOTTOM 6.0V

6.0V

1

, Drain-to-Source Current (A)

D

I

20µs PULSE WIDTH Tj = 150°C

0.1

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

2.5

1.9A

I =



D

2.0

10



1

D

I , Drain-to-Source Current (A)

0.1

6.0 7.0 8.0 9.0 10.0

Fig 3. Typical Transfer Characteristics

°

T = 150 C

J

°

T = 25 C



J

V = 25V

DS



20µs PULSE WIDTH

V , Gate-to-Source Voltage (V)

GS

1.5

1.0

(Normalized)

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature ( C)

J

Fig 4. Normalized On-Resistance

V =

10V



GS

°

Vs. Temperature

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IRF7465

10000

1000

V

= 0V, f = 1 MHZ

GS

C

= C

iss

gs

C

= C

rss

gd

C

= C

ds

+ C

oss

+ Cgd, C

gd

ds

Ciss

100

Coss

Crss

C, Capacitance(pF)

10

1

1 10 100 1000

VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

100

SHORTED

20

I =

1.14A

D



V = 120V

DS

G

V = 75V

DS



V = 30V

DS

16

12

8

4

GS

V , Gate-to-Source Voltage (V)

0

0 4 8 12 16

Q , Total Gate Charge (nC)

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

100

OPERATION IN THIS AREA LIMITED BY RDS(on)

10

°

T = 150 C



J

°

T = 25 C



1

J

10

100µsec

1

1msec

SD

I , Reverse Drain Current (A)

V = 0 V



0.1

0.4 0.6 0.8 1.0

V ,Source-to-Drain Voltage (V)

SD

GS

Fig 7. Typical Source-Drain Diode

, Drain-to-Source Current (A)

TA = 25°C

D

I

TJ = 150°C Single Pulse

0.1 1 10 100 1000

V

, Drain-toSource Voltage (V)

DS

Fig 8. Maximum Safe Operating Area

10msec

Forward Voltage

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IRF7465

(

)

2.0

1.5

1.0

D

I , Drain Current (A)

0.5

0.0 25 50 75 100 125 150

T , Case Temperature ( C)

C

°

Fig 9. Maximum Drain Current Vs.

Ambient Temperature

100

R

V

DS

V

GS

R

G

10V

Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %

D

D.U.T.

Fig 10a. Switching Time Test Circuit

V

DS

90%

10% V

GS

t

d(on)tr

t

d(off)tf

Fig 10b. Switching Time Waveforms

+

V

DD

-

D = 0.50

thJA

0.20

10

0.10

0.05 P

0.02

1

0.01

Thermal Response (Z )

0.1

0.00001 0.0001 0.001 0.01 0.1 1 10

SINGLE PULSE



THERMAL RESPONSE

Notes:

1. Duty factor D = t / t



2. Peak T = P x Z + T

t , Rectangular Pulse Duration (sec)

1

J DM thJA A

DM

t

1



1 2

t

2

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

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IRF7465

(BR)

A

)

0.40

Ω

0.36

0.32

V

= 10V

GS

0.28

0.24

( on) , Drain-to-Source On Resistance (

DS

0.20

R

0 4 8 12 16

ID , Drain Current (A)

Fig 12. On-Resistance Vs. Drain Current

Current Regulator

Same Type as D.U.T.

.2µF

12V

V

GS

50KΩ

.3µF

D.U.T.

3mA

I

G

Current Sampling Resistors

V

GS

+

V

DS

-

I

D

V

G

QGSQ

Q

G

GD

Charge

)

0.50

Ω

0.45

0.40

0.35

0.30

, Drain-to -Source On Resistance (

0.25

DS(on)

R

0.20

ID = 1.14A

6 8 10 12 14 16

V

Gate -to -Source Voltage (V)

GS,

Fig 13. On-Resistance Vs. Gate Voltage

100

TOP

80



BOTTOM

I

D

0.8A

1.5A

1.9A

Fig 14a&b. Basic Gate Charge Test Circuit

60

and Waveform

40

15V

V

t

p

I

AS

DSS

V

R

G

20V

L

DS

D.U.T

I

AS

Ω

0.01

t

p

Fig 15a&b. Unclamped Inductive Test circuit

and Waveforms

DRIVER

+

V

DD

-

20

AS

E , Single Pulse Avalanche Energy (mJ)

0

25 50 75 100 125 150

Starting T , Junction Temperature ( C)

J

Fig 15c. Maximum Avalanche Energy

Vs. Drain Current

°

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SO-8 Package Details

D

5

- B -

8 7 6 5

5

E

- A 1 2 3 4

e

6X

- C -

0.25 ( .0 1 0 ) M C A S B S

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.

2. C O NT RO L LIN G DIM ENS IO N : IN CH .

3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).

4. O U T L IN E C ON FO R M S T O JE DEC OU T LIN E M S-01 2A A . DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS

5 M O LD P R OT R U SION S N OT T O EXC E E D 0 .2 5 (.0 0 6). DIM E N S IO NS IS TH E LE N GT H O F LE A D F OR S OLD E R IN G T O A S U B S TR ATE ..

6

B 8X

e1

A1

H

0 .2 5 (.0 1 0) M A M

A

0.10 (.004)

θ

L 8X

K x 45°

6

C 8X

IRF7465

IN CH E S M IL L IME TERS

DIM

M IN MAX M IN MAX A .0 532 .0 688 1 .35 1 .7 5 A1 .0 040 .0 098 0 .10 0 .2 5 B .0 14 .0 18 0 .36 0 .4 6 C .0 075 .0 0 9 8 0 .1 9 0.2 5 D .1 89 .1 9 6 4 .8 0 4.9 8 E .1 50 .1 57 3 .81 3 .9 9 e .0 5 0 BASIC 1 .2 7 BASIC e1 .0 2 5 BASIC 0.635 BASIC H .2 284 .2 4 4 0 5 .80 6 .2 0 K .0 11 .0 19 0 .28 0 .4 8 L 0 .1 6 .0 50 0 .41 1 .2 7

θ

0 ° 8 ° 0 ° 8 °

RECOMMENDED FOOTPRINT

0.72 (.028 ) 8X

6.46 ( .255 )

1.27 ( .050 ) 3X

1.78 (.070) 8X

SO-8 Part Marking

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IRF7465

(

)

(

SO-8 Tape and Reel

TERMINAL NUMBER 1

12.3 ( .484

11.7 ( .461

8.1 ( .318

7.9 ( .312

NOTES:

1. CONTROLLING DIMENSION : MILLIMETER .

2. ALL DIMENSIONS ARE SHOW N IN MILLIMETERS

3. OUTLINE CONFORM S TO EIA-481 & EIA-541.

NOT ES :

1. CONTRO LL ING DIMEN SION : MILLIMETER.

2. OUTLINE CO NF O RM S TO EIA-481 & EIA-541.

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature.

 Starting T

RG = 25Ω, I

= 25°C, L = 22mH

J

= 1.9A.

AS

FEED DIRECTION

INC HE S).

330.00

12.992

MAX.

14.40 ( .566

12.40 ( .488

 Pulse width ≤ 400µs; duty cycle ≤ 2%.

 When mounted on 1 inch square copper board

Data and specifications subject to change without notice.

This product has been designed and qualified for the industrial market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information. 2/01

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