Datasheet IRF740 Datasheet (Intersil)

IRF740

Data Sheet July 1999

10A, 400V, 0.550 Ohm, N-Channel Power
MOSFET

This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy inthe breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
They can be operated directly from integrated circuits.

Formerly developmental type TA17424.

Ordering Information

PART NUMBER PACKAGE BRAND

IRF740 TO-220AB IRF740

NOTE: When ordering, include the entire part number.

File Number

Features

• 10A, 400V

•r

DS(ON)

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 0.550Ω

Components to PC Boards”

Symbol

D

G

2311.3

Packaging

DRAIN

(FLANGE)

JEDEC TO-220AB

TOP VIEW

SOURCE

DRAIN

GATE

S

4-239

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

IRF740

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

IRF740 UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DS

DGR

400 V
400 V

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID 10 A

TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

D

DM

GS

D

6.3 A
40 A

±20 V

125 W

Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0 W/oC

Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

AS

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

520 mJ

-55 to 150

300

260

o

C

o

C

o

C

NOTE:

1. TJ = 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate to Threshold Voltage V

GS(TH)VGS

Zero Gate Voltage Drain Current I

On-State Drain Current (Note 2) I

D(ON)

Gate to Source Leakage Current I

Drain to Source On Resistance (Note 2) r

DS(ON)VGS

Forward Transconductance (Note 2) g
Turn-On Delay Time t

D(ON)

Rise Time t
Turn-Off Delay Time t

D(OFF)

Fall Time t
Total Gate Charge

Q

g(TOT)VGS

(Gate to Source + Gate to Drain)
Gate to Source Charge Q
Gate to Drain “Miller” Charge Q
Input Capacitance C
Output Capacitance C
Reverse-Transfer Capacitance C
Internal Drain Inductance L

Internal Source Inductance L

Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

DSSVGS

DSS

GSS

fs

r

f

gs
gd

ISS
OSS
RSS

D

S

θCS

θJA

= 0V, ID = 250µA (Figure 10) 400 - - V

= VDS, ID = 250µA 2.0 - 4.0 V
VDS = Rated BV
VDS = 0.8 x Rated BV
VDS> I

D(ON) xrDS(ON)MAX

, VGS = 0V - - 25 µA

DSS

, VGS = 0V, TJ = 125oC - - 250 µA

DSS

, VGS = 10V 10 - - A

VGS = ±20V - - ±500 nA

= 10V, ID = 5.2A (Figures 8, 9) - 0.47 0.550 Ω
VDS≥ 50V, ID = 5.2A (Figure 12) 5.8 8.9 - S
VDD= 200V, ID≈ 10A, RG = 9.1Ω,

RL = 20Ω, VGS = 10V
MOSFET Switching Times are Essentially
Independent of Operating Temperature

-1521ns

-2541ns

-5275ns

-2536ns

= 10V, ID = 10A, VDS = 0.8 x Rated BV
I

= 1.5mA (Figure 14)

g(REF)

DSS

Gate Charge is Essentially Independent of Operating
Temperature

-4163nC

- 6.5 - nC

-23-nC

VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 11) - 1250 - pF

- 300 - pF

-80-pF

Measured From the
Contact Screw on Tab to
Center of Die

MeasuredFrom the Drain
Lead, 6mm (0.25in) From
Package to Center of Die

Measured From the
Source Lead, 6mm
(0.25in) From Header to
Source Bonding Pad

Modified MOSFET
Symbol Showing the
Internal Devices
Inductances

D

L

D

G

L

S

S

- 3.5 - nH

- 4.5 - nH

- 7.5 - nH

- - 1.0

o

C/W

Free Air Operation - - 62.5oC/W

4-240

IRF740

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Continuous Source to Drain Current I
Pulse Source to Drain Current

I

SDM

SD

(Note 3)

Source to Drain Diode Voltage (Note 2) V
Reverse Recovery Time t
Reverse Recovered Charge Q

NOTES:

2. Pulse Test: Pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive Rating: Pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).

4. VDD = 50V, starting TJ = 25oC, L = 9.1µH, RG = 25Ω, peak IAS = 10A.

Modified MOSFET
Symbol Showing the
Integral Reverse

D

- - 10 A

- - 40 A

P-N Junction Diode

G

S

TJ = 25oC, ISD= 10A, VGS = 0V (Figure 13) - - 2.0 V

SD

TJ = 25oC, ISD = 10A, dISD/dt = 100A/µs 170 390 790 ns

rr

TJ = 25oC, ISD = 10A, dISD/dt = 100A/µs 1.6 4.5 8.2 µC

RR

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 50 100 150

TC, CASE TEMPERATURE (oC)

Unless Otherwise Specified

FIGURE 1. NORMALIZED POWERDISSIPATION vs CASE

TEMPERATURE

1

0.5

0.2

0.1

0.1

0.05

0.02

10

, TRANSIENT THERMAL IMPEDANCE

θJC

Z

10

0.01

-2

-3

-5

10

SINGLE PULSE

-4

10

10

10

8

6

4

DRAIN CURRENT (A)

D,

I

2

0

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

-3

, RECTANGULAR PULSE DURATION (S)

t

1

-2

10

50 75 10025 150

TC, CASE TEMPERATURE (oC)

125

CASE TEMPERATURE

P

DM

t

1

t

t

2

NOTES:
DUTY FACTOR: D = t1/t

PEAK T

0.1 1 10

= PDMx Z

J

2

θJC

2

+ T

C

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

4-241

IRF740

Typical Performance Curves

100

10

1

, DRAIN CURRENT (A)

D

I

T
TC = 150oC
SINGLE PULSE

0.1
110

OPERATION IN THIS
REGION IS LIMITED
BY r

DS(ON)

= 25oC

C

VDS, DRAIN TO SOURCE VOLTAGE (V)

Unless Otherwise Specified (Continued)

15

10µs

100µs

1ms

10ms

DC

2

10

3

10

12

9

6

, DRAIN CURRENT (A)

D

I

3

0

= 10V

V

GS

VGS = 6.0V

40 80 120 1600

V

DS,

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

VGS = 5.5V

VGS = 5.0V

VGS = 4.5V

VGS = 4.0V

DRAIN TO SOURCE VOLTAGE (V)

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS

15

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

12

9

6

, DRAIN CURRENT (A)

D

I

3

0

2468010
V

DS,

VGS = 10V

DRAIN TO SOURCE VOLTAGE (V)

VGS = 6.0V

VGS = 5.5V

VGS = 5.0V

VGS = 4.5V

VGS = 4.0V

100

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

≥ 50V

V

DS

10

1

, DRAIN TO SOURCE CURRENT (A)

DS(ON)

I

0.1
0246810

TJ = 150oC

VGS, GATE TO SOURCE VOLTAGE (V)

TJ = 25oC

200

FIGURE 6. SATURATION CHARACTERISTICS FIGURE 7. TRANSFER CHARACTERISTICS

5

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

4

3

2

, DRAIN TO SOURCE

ON RESISTANCE

DS(ON)

1

r

0

10 20 3025 50

TC, CASE TEMPERATURE (oC)

VGS = 10V

VGS = 20V

40

FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT

3.0

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
I

= 10A, VGS = 10V

D

2.4

1.8

1.2

0.6

ON RESISTANCE VOLTAGE

NORMALIZED DRAIN TO SOURCE

0

-40 60 16012080400-60 -20

20

T

, JUNCTION TEMPERATURE (oC)

J

FIGURE 9. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

4-242

100

140

IRF740

Typical Performance Curves

1.25
ID = 250µA

1.15

1.05

0.95

BREAKDOWN VOLTAGE

0.85

NORMALIZED DRAIN TO SOURCE

0.75

-40 60 16012080400-60 -20

20

T

, JUNCTION TEMPERATURE (oC)

J

Unless Otherwise Specified (Continued)

100

140

FIGURE 10. NORMALIZED DRAIN TOSOURCE BREAKDOWN

VOLTAGE vs JUNCTION TEMPERATURE

15

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

V

≥ 50V

DS

12

TJ = 25oC

9

TJ = 150oC

6

, TRANSCONDUCTANCE (S)

3

fs

g

0

4 8 12 16020

ID, DRAIN CURRENT (A)

2500

2000

1500

1000

C, CAPACITANCE (pF)

500

0

1

C

OSS

C

RSS

25

10

VDS, DRAIN TO SOURCE VOLTAGE (V)

VGS = 0V, f = 1MHz
C

= CGS + C

ISS

C

= C

RSS

C

≈ C

OSS

C

ISS

2

5225

10

GD

DS

+ C

GD

GD

10

FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

100

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

10

TJ = 150oC

TJ = 25oC

1.0

, SOURCE TO DRAIN CURRENT (A)

SD

I

0.1
0 0.3 0.6 0.9 1.5

VSD, SOURCE TO DRAIN VOLTAGE (V)

1.2

3

FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE

20

ID = 10A

16

VDS = 80V

12

8

4

GATE TO SOURCE VOLTAGE (V)

GS,

V

0

12 24 36 48060

VDS = 200V

VDS = 320V

Qg,GATE CHARGE (nC)

FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE

4-243

IRF740

Test Circuits and Waveforms

V

DS

BV

DSS

L

VARY t

TO OBTAIN

P

REQUIRED PEAK I

V

GS

AS

R

G

+

V

DD

-

DUT

0V

P

I

AS

0.01Ω

0

t

FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS

t

P

I

AS

t

AV

V

DS

V

DD

R

G

V

GS

FIGURE 17. SWITCHING TIME TEST CIRCUIT

CURRENT

REGULATOR

12V

BATTERY

0

0.2µF

50kΩ

I

G(REF)

0.3µF

G

IG CURRENT

SAMPLING

RESISTOR RESISTOR

R

L

DUT

D

S

I

D

SAMPLING

+

V

DD

-

V

DS

(ISOLATED
SUPPLY)

SAME TYPE
AS DUT

DUT

V

DS

CURRENT

t

ON

t

d(ON)

t

V

DS

90%

0

V

GS

10%

0

r

10%

50%

PULSE WIDTH

FIGURE 18. RESISTIVE SWITCHING WAVEFORMS

V

DD

Q

g(TOT)

Q

gd

Q

gs

V

DS

0

I

G(REF)

0

t

d(OFF)

90%

V

GS

t

OFF

50%

t

f

90%

10%

FIGURE 19. GATE CHARGE TEST CIRCUIT FIGURE 20. GATE CHARGE WAVEFORMS

4-244

IRF740

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