Datasheet IRF7301 Datasheet (International Rectifier)

HEXFET® Power MOSFET

l Generation V Technology
l Ultra Low On-Resistance
l Dual N-Channel Mosfet
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the designer with an
extremely efficient device for use in a wide variety of applications.

The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics and multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple devices can be used in
an application with dramatically reduced board space. The package is designed
for vapor phase, infra red, or wave soldering techniques. Power dissipation of
greater than 0.8W is possible in a typical PCB mount application.

S1

G1

S2

G2

1

2

3

4

To p V iew

8

D1

7

D1

6

D2

5

D2

PD - 9.1238C

IRF7301

V

= 20V

DSS

R

DS(on)

= 0.050Ω

SO-8

Absolute Maximum Ratings

Parameter Max. Units

ID @ TA = 25°C 10 Sec. Pulsed Drain Current, VGS @ 4.5V 5.7

@ TA = 25°C Continuous Drain Current, VGS @ 4.5V 5.2

I

D

ID @ TA = 70°C Continuous Drain Current, VGS @ 4.5V 4.1
I

DM

= 25°C Power Dissipation 2.0 W

P

D @TA

V

GS

dv/dt Peak Diode Recovery dv/dt  5.0 V/ns
T

J, TSTG

Pulsed Drain Current  21

Linear Derating Factor 0.016 W/°C
Gate-to-Source Voltage ± 12 V

Junction and Storage Temperature Range -55 to + 150 °C

Thermal Resistance Ratings

Parameter Typ. Max. Units

R

θJA

Maximum Junction-to-Ambient ––– 62.5

°C/W

A

8/25/97

IRF7301

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

DS(ON)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

D

L

S

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage 20 ––– ––– V VGS = 0V, ID = 250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.044 ––– V/°C Reference to 25°C, ID = 1mA

J

Static Drain-to-Source On-Resistance

––– ––– 0.050 V
––– ––– 0.070 V

ΩR

= 4.5V, ID = 2.6A 

GS

= 2.7V, ID = 2.2A 

GS

Gate Threshold Voltage 0.70 ––– ––– V VDS = VGS, ID = 250µA
Forward Transconductance 8.3 ––– ––– S VDS = 15V, ID = 2.6A

Drain-to-Source Leakage Current

––– ––– 1.0 VDS = 16V, VGS = 0V

––– ––– 25 V
Gate-to-Source Forward Leakage ––– ––– 10 0 V
Gate-to-Source Reverse Leakage ––– ––– -100 V

µA

nA

= 16V, VGS = 0V, TJ = 125 °C

DS

= 12V

GS

= - 12V

GS

Total Gate Charge ––– ––– 20 ID = 2.6A
Gate-to-Source Charge ––– ––– 2.2 nC VDS = 16V
Gate-to-Drain ("Miller") Charge ––– ––– 8.0 VGS = 4.5V, See Fig. 6 and 12 
Turn-On Delay Time ––– 9.0 ––– VDD = 10V
Rise Time ––– 42 ––– ID = 2.6A
Turn-Off Delay Time ––– 32 ––– RG = 6.0Ω

ns
Fall Time ––– 51 ––– RD = 3.8Ω, See Fig. 10 
Internal Drain Inductance ––– 4.0 –––

Internal Source Inductance ––– 6.0 –––

Between lead tip

nH

and center of die contact

Input Capacitance ––– 66 0 ––– VGS = 0V
Output Capacitance ––– 2 80 – –– pF VDS = 15V
Reverse Transfer Capacitance ––– 140 ––– ƒ = 1.0MHz, See Fig. 5

D

G

S

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

 I

SD

TJ ≤ 150°C

Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode)  p-n junction diode.

––– ––– 2.5

––– ––– 21

Diode Forward Voltage ––– ––– 1.0 V TJ = 25°C, IS = 1.8A, VGS = 0V 
Reverse Recovery Time ––– 29 44 ns TJ = 25°C, IF = 2.6A
Reverse RecoveryCharge ––– 22 3 3 nC di/dt = 100A/µs
Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

 Pulse width ≤ 300µs; duty cycle ≤ 2%.

≤ 2.6A, di/dt ≤ 100A/µs, V

DD

≤ V

(BR)DSS

,

 Surface mounted on FR-4 board, t ≤ 10sec.

D

A

G

S



IRF7301

1000

VGS
TOP 7.5V

5.0V

4.0V

3.5V

3.0V

2.5V

2.0V
BOTT OM 1.5V

100

10

D

I , D rain-to-Sourc e Current (A)

20µs PULSE WI DTH

1.5V
T = 25 °C

1

0.1 1 10 100

V , Dra in-to-So urc e V oltag e (V)

DS

J

A

1000

VGS
TOP 7.5V

5.0V

4.0V

3.5V

3.0V

2.5V

2.0V
BOTT OM 1.5V

100

10

D

I , Dra in -to-S ource C urrent (A)

1.5V
20µs PULSE WIDTH

T = 150°C

1

0.1 1 10 100

V , Dra in-to-So urc e V olta ge (V )

DS

J

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

100

2.0

I = 4 .3A

D

A

T = 25°C

10

J

T = 150°C

J

1.5

1.0

(Norm alized)

0.5

D

I , Drain-to-Sou rce Cur rent (A)

1

1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

V , Ga te-to-So urce Voltage (V)

GS

V = 15 V

DS

20µs PULSE W IDTH

A

DS(on)

R , D ra in-to-S ou rc e O n R es ista nc e

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Ju nc tion Te m peratu re ( °C )

J

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature

V = 4.5 V

GS

A

IRF7301

1200

900

600

V = 0V, f = 1MH z

GS

C = C + C , C S HO RTED

iss gs gd ds

C = C

rss gd

C = C + C

oss ds gd

C

iss

C

oss

C, C apac itance (pF)

300

0

1 10 100

C

rss

V , Drai n-to -Source Voltag e (V)

DS

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

100

10

I = 2 .6A

D

V = 16V

DS

8

6

4

2

GS

V , Gate -to-S ou rc e V o ltage (V )

FOR TEST CIRCUIT

A

0

0 5 10 15 20 25

Q , Tota l Gate Ch arge (nC )

G

SEE FIGURE 12

A

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

100

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

10

T = 150°C

J

T = 25°C

1

SD

I , Rev erse D rain Cu rrent (A)

0.1

0.0 0.5 1.0 1.5 2.0 2.5

V , Sour c e-to- Drain Vo ltag e ( V)

SD

J

V = 0V

GS

Fig 7. Typical Source-Drain Diode

Forward Voltage

100us

10

1ms

D

I , Drain Current (A)I , Drain Current (A)

°

= 25 C

A

T T= 150 C
Single Pulse

A

1

0.1 1 10 100

°

J

V , Drain-to-Source Voltage (V)

DS

10ms

Fig 8. Maximum Safe Operating Area

+

-

6.0

5.0

4.0

V

DS

V

GS

R

G

4.5V

Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

IRF7301

R

D

D.U.T.

V

DD

3.0

2.0

D

I , Drain Current (A)

1.0

0.0
25 50 75 100 125 150

T , Case Temperature ( C)

C

°

Fig 9. Maximum Drain Current Vs.

Fig 10a. Switching Time Test Circuit

V

DS

90%

10%
V

GS

t

d(on)tr

t

d(off)tf

Fig 10b. Switching Time Waveforms

Ambient Temperature

100

D = 0.50

thJA

Thermal Response (Z )

0.20

10

0.10

0.05

0.02

0.01

1

0.1

0.0001 0.001 0.01 0.1 1 10 100

SINGLE PULSE

(THERMAL RESPONSE)

1. Duty factor D = t / t

2. Peak T =P x Z + T

t , Rectangular Pulse Duration (sec)

1

Notes:

J DM thJA A

1 2

P

DM

t

1

t

2

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

IRF7301

4.5V

Q

GS

V

G

Current Regulator

Same Type as D.U.T.

50KΩ

Q

G

Q

GD

12V

.2µF

V

GS

3mA

.3µF

D.U.T.

+

V

DS

-

Charge

I

G

Current Sampling Resistors

I

D

Fig 12a. Basic Gate Charge Waveform Fig 12b. Gate Charge Test Circuit

IRF7301

+

-

Peak Diode Recovery dv/dt Test Circuit

D.U.T

+



Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance
Current Transformer

-

+



-

**

• dv/dt controlled by R

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

VGS*



R

G

* Reverse Polarity for P-Channel

** Use P-Channel Driver for P-Channel Measurements

Driver Gate Drive

P.W.

Period

-

D =



G

P.W.

Period

+

VGS=10V

[ ] ***

*

V

DD

Reverse
Recovery
Current

Re-Applied
Voltage

D.U.T. ISDWaveform

Body Diode Forward

Current

D.U.T. VDSWaveform

Body Diode Forward Drop

Inductor Curent

Ripple ≤ 5%

*** V

= 5.0V for Logic Level and 3V Drive Devices

GS

di/dt

Diode Recovery

dv/dt

Fig 13. For N-Channel HEXFETS

V

DD

[ ]

I

[ ]

SD

IRF7301

Package Outline

SO8 Outline

D

5

- B -

8 7 6 5

5

E

- A ­1 2 3 4

e

6X

- C -

0.25 (.010) M C A S B S

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.

2. CONTROLLING DIMENSION : INCH.

3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).

4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS

5
MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006).
DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE..

6

B 8X

e1

A1

H

0.25 (.010) M A M

A

0.10 (.004)

K x 45°

θ

6

L
8X

C
8X

INCHES MILLIMETERS

DIM

MIN MAX MIN MAX
A .0532 .0688 1.35 1.75
A1 .0040 .0098 0.10 0.25
B .014 .018 0.36 0.46
C .0075 .0098 0.19 0.25
D .189 .196 4.80 4.98

E .150 .157 3.81 3.99
e .050 BASIC 1.27 BASIC
e1 .025 BASIC 0.635 BASIC
H .2284 .2440 5.80 6.20
K .011 .019 0.28 0.48
L 0.16 .050 0.41 1.27

0° 8° 0° 8°

θ

RECOMMENDED FOOTPRINT

0.72 (.028 )
8X

6.46 ( .255 )

1.27 ( .050 )
3X

1.78 (.070)
8X

Part Marking Information

SO8

EXAMPLE : THIS IS AN IRF7101

312

INTERNATIONAL
R E CTIFIE R
L OG O

F7 101

TOP

DATE CODE (YW W)
Y = LAST DIGIT OF THE YEAR
WW = WEEK

W A F E R

PART NUMBER

LOT C OD E
(LAST 4 DIGITS)

XXXX

BOTTOM

Tape & Reel Information

SO8

Dimensions are shown in millimeters (inches)

TERM INAL NU M BER 1

12.3 ( .484 )

11.7 ( .461 )

IRF7301

8.1 ( .318 )

7.9 ( .312 )

NOTES:

1. CO NTROLLING DIMENSION : M ILL IM ETER.

2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).

3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

330.00
(12.992)
MAX.

NOT ES :

1. CO NTRO LLING DIME NS ION : MILLIMETER.

2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

FEED DIRECTIO N

14.4 0 ( .566 )

12.4 0 ( .488 )

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: [phone]

EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020

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IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111

IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: [phone]

IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: [phone]

http://www.irf.com/ Data and specifications subject to change without notice. 8/97