Page 1
l Adavanced Process Technology
l Ultra Low On-Resistance
l Dual N-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching
Description
Fourth Generation HEXFETs from International
Rectifier utilize advanced processing techniques to
achieve the lowest possible on-resistance per silicon
area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the
designer with an extremely efficient device for use in
a wide variety of applications.
S1
G1
S2
G2
1
2
3
4
Top View
PD - 9.1095B
IRF7103
HEXFET® Power MOSFET
8
D1
7
D1
6
D2
5
D2
R
DS(on)
V
= 50V
DSS
= 0.130Ω
ID = 3.0A
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
SO-8
dual-die capability making it ideal in a variety of power
applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 3.0
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 2.3
I
DM
PD @TC = 25°C Power Dissipation 2.0
V
GS
dv/dt Peak Diode Recovery dv/dt 4.5 V/nS
T
J, TSTG
Pulsed Drain Current 10
W
Linear Derating Factor 0.016 W/°C
Gate-to-Source Voltage ± 20 V
Junction and Storage Temperature Range -55 to + 150
°C
Thermal Resistance Ratings
Parameter Min. Typ. Max. Units
R
Maximum Junction-to-Ambient –––
θJA
–––
62.5 °C/W
A
8/25/97
Page 2
IRF7103
Electrical Characteristics @ T
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
(BR)DSS
Drain-to-Source Breakdown Voltage 50 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.049 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance
Gate Threshold Voltage 1.0 ––– 3.0 V VDS = VGS, ID = 250µA
Forward Transconductance ––– 3.8 ––– S VDS = 15V, ID = 3.0A
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage ––– ––– 100 V
Gate-to-Source Reverse Leakage ––– ––– -100 V
Total Gate Charge ––– 12 30 ID = 2.0A
Gate-to-Source Charge ––– 1.2 ––– nC VDS = 25V
Gate-to-Drain ("Miller") Charge ––– 3.5 –– – VGS = 10V
Turn-On Delay Time ––– 9.0 20 VDD = 25V
Rise Time ––– 8.0 20 ID = 1.0A
Turn-Off Delay Time ––– 45 70 RG = 6.0Ω
Fall Time ––– 25 50 RD = 25Ω
Internal Drain Inductance ––– 4.0 –––
Internal Source Inductance ––– 6.0 – – –
Input Capacitance ––– 290 ––– VGS = 0V
Output Capacitance ––– 140 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 37 ––– ƒ = 1.0MHz
= 25°C (unless otherwise specified)
J
––– 0.11 0.13 V
––– 0.16 0.20 V
––– ––– 2.0 VDS = 40V, VGS = 0V
––– ––– 25 V
ΩR
µA
nA
= 10V, ID = 3.0A
GS
= 4.5V, ID = 1.5A
GS
= 40V, VGS = 0V, TJ = 55 °C
DS
= 20V
GS
= - 20V
GS
ns
Between lead,6mm(0.25in.)
nH
from package and center
of die contact
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
I
SD
TJ ≤ 150°C
Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
––– ––– 2.0
––– ––– 12
Diode Forward Voltage –– – ––– 1.2 V TJ = 25°C, IS = 1.5A, VGS = 0V
Reverse Recovery Time ––– 70 100 n s TJ = 25°C, IF = 1.5A
Reverse RecoveryCharge ––– 1 10 1 70 nC di/dt = 100A/µs
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
≤ 1.8A, di/dt ≤ 90A/µs, V
DD
≤ V
(BR)DSS
,
Surface mounted on FR-4 board, t ≤ 10sec.
D
A
G
S
Page 3
IRF7103
Page 4
IRF7103
C,
Page 5
IRF7103
+
-
R
D.U.T.
D
t
d(off)tf
V
DS
V
GS
R
G
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)tr
V
DD
Fig 10b. Switching Time Waveforms
100
D = 0.50
thJA
Thermal Response (Z )
0.20
10
0.10
0.05
0.02
0.01
1
0.1
0.0001 0.001 0.01 0.1 1 10 100
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
SINGLE PULSE
(THERMAL RESPONSE)
1. Duty factor D = t / t
2. Peak T =P x Z + T
t , Rectangular Pulse Duration (sec)
1
Notes:
J DM thJA A
1 2
P
DM
t
1
t
2
Page 6
IRF7103
Current Regulator
Same T ype as D.U.T .
Q
G
10V
Q
GS
V
G
Q
GD
Charge
Fig 12a. Basic Gate Charge Waveform
50KΩ
12V
.2µF
V
GS
.3µF
D.U.T .
3mA
I
G
Current Sampling Resistors
I
D
Fig 12b. Gate Charge Test Circuit
+
V
DS
-
Page 7
IRF7103
+
-
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
-
R
G
Driver Gate Drive
P.W.
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
• dv/dt controlled by R
• Driver same type as D.U.T.
controlled by Duty Factor "D"
• I
SD
• D.U.T. - Device Under Test
Period
-
D =
G
Period
P.W.
+
V
DD
VGS=10V
*
Reverse
Recovery
Current
Re-Applied
Voltage
D.U.T. ISDWaveform
Body Diode Forward
Current
D.U.T. VDSWaveform
Body Diode Forward Drop
Inductor Curent
Ripple ≤ 5%
Diode Recovery
di/dt
dv/dt
* VGS = 5V for Logic Level Devices
Fig 13. For N-Channel HEXFETS
V
DD
I
SD
Page 8
IRF7103
Package Outline
SO8 Outline
D
5
- B -
8 7 6 5
5
E
- A 1 2 3 4
e
6X
- C -
0.25 (.010) M C A S B S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIMENSION : INCH.
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS
5
MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006).
DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE..
6
B 8X
e1
A1
H
0.25 (.010) M A M
A
0.10 (.004)
K x 45°
θ
6
L
8X
C
8X
INCHES MILLIMETERS
DIM
MIN MAX MIN MAX
A .0532 .0688 1.35 1.75
A1 .0040 .0098 0.10 0.25
B .014 .018 0.36 0.46
C .0075 .0098 0.19 0.25
D .189 .196 4.80 4.98
E .150 .157 3.81 3.99
e .050 BASIC 1.27 BASIC
e1 .025 BASIC 0.635 BASIC
H .2284 .2440 5.80 6.20
K .011 .019 0.28 0.48
L 0.16 .050 0.41 1.27
0° 8° 0° 8°
θ
RECOMMENDED FOOTPRINT
0.72 (.028 )
8X
6.46 ( .255 )
1.27 ( .050 )
3X
1.78 (.070)
8X
Part Marking Information
SO8
EXAMPLE : THIS IS AN IRF7101
312
INTERNATIONAL
R E CT IFIE R
L OGO
F7 101
TOP
DATE CODE (YW W)
Y = LAST DIGIT OF THE YEAR
WW = WEEK
W AF ER
PART NUMBER
LOT CODE
(LAST 4 DIGITS)
XXXX
BOTTOM
Page 9
Tape & Reel Information
SO8
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .48 4 )
11.7 ( .46 1 )
IRF7103
8.1 ( .3 18 )
7.9 ( .3 12 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIO NS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330. 00
(12.99 2)
M A X.
NOT ES :
1. CO NTRO LLING DIME NS ION : MILLIM E TER .
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED D IRECT ION
14.40 ( .566 )
12.40 ( .488 )
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/ Data and specifications subject to change without notice. 8/97
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