Datasheet IRF6601 Datasheet (International Rectifier)

PD - 94366C

IRF6601

R

DS(on)

TM

Power MOSFET

max I

DirectFET ISOMETRIC

D

W

l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses
l Low Switching Losses
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible
l Compatible with exisiting Surface Mount

V

20V 3.8mΩ@VGS = 10V 26A

DirectFET

DSS

5.0mΩ@VGS = 4.5V 21A

Techniques

Description

The IRF6601 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging
to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,
infra-red or convection soldering techniques. The DirectFET package allows dual sided cooling to maximize thermal transfer
in power systems, IMPROVING previous best thermal resistance by 80%.

The IRF6601 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction
and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the
latest generation of processors operating at higher frequencies. The IRF6601 has been optimized for parameters that are
critical in synchronous buck converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6601
offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications.

Absolute Maximum Ratings

Parameter Max. Units

V

DS

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 85
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 26
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 20 A
I

DM

PD @TA = 25°C Power Dissipation 3.6
PD @TA = 70°C Power Dissipation 2.3
PD @TC = 25°C Power Dissipation 42

V

GS

T

J, TSTG

Drain- Source Voltage 20 V

Pulsed Drain Current  200

Linear Derating Factor 28 mW/°C
Gate-to-Source Voltage ±20 V
Junction and Storage Temperature Range -55 to + 150 °C

Thermal Resistance

Symbol Parameter Typ. Max. Units

R

θJA

R

θJA

R

θJA

R

θJC

R

θJ-PCB

Junction-to-Ambient ––– 35
Junction-to-Ambient ––– 12.5
Junction-to-Ambient ––– 20 °C/W
Junction-to-Case ––– 3.0
Junction-to-PCB mounted ––– 1.0

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3/25/02

IRF6601

Static @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

I

DSS

I

GSS

Dynamic @ TJ = 25°C (unless otherwise specified)

Symbol Parameter Min. Typ. Max. Units Conditions

g

fs

Q

g

Q

gs

Q

gd

Q

oss

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage 20 ––– ––– VVGS = 0V, ID = 100µA

/∆T

Breakdown Voltage Temp. Coefficient

J

Static Drain-to-Source On-Resistance

––– 0.019 ––– V/°C Reference to 25°C, ID = 1mA

––– ––– 3.8 VGS = 10V, ID = 26A
––– ––– 5.0 VGS = 4.5V, ID = 21A 

mΩ

Gate Threshold Voltage 1. 0 ––– 3.0 V VDS = VGS, ID = 250µA

Drain-to-Source Leakage Current

––– ––– 20
––– ––– 100 VDS = 16V, VGS = 0V, TJ = 70°C

Gate-to-Source Forward Leakage ––– ––– 100 V
Gate-to-Source Reverse Leakage ––– ––– -100

VDS = 16V, VGS = 0V

µA

= 20 V

GS

nA

V

= -20 V

GS

Forward Transconductance 50 ––– ––– SVDS = 10 V, ID = 21 A
Total Gate Charge Cont FET ––– 36 54 ID = 21A
Gate-to-Source Charge ––– 11 ––– nC VDS = 16 V
Gate to Drain ("Miller")Charge ––– 12 ––– VGS = 4.5 V,
Output Charge ––– 48 ––– VDS = 0 V, VGS = 16V
Turn-On Delay Time ––– 16 ––– VDD = 15 V
Rise Time ––– 140 ––– ns ID = 21 A
Turn-Off Delay Time ––– 33 ––– RG = 5.1 Ω
Fall Time ––– 110 ––– VGS = 4.5 V 
Input Capacitance ––– 3440 ––– VGS = 0V
Output Capacitance ––– 2430 ––– pF VDS = 10V
Reverse Transfer Capacitance ––– 380 ––– ƒ = 1.0MHz

Avalanche Characteristics

Symbol Parameter Typ. Max. Units

E

AS

I

AR

Single Pulse Avalanche Energy ––– 65 mJ
Avalanche Current ––– 21 A

Diode Characteristics

Symbol Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

t

rr

Q

rr

Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode) 

Diode Forward Voltage

––– –––

––– –––
––– 0.83 1.2 V TJ = 25°C, IS = 21A, VGS = 0V 

––– 0.68 ––– TJ = 125°C, IS = 21A, VGS = 0V 

26

200

showing the

A

p-n junction diode.

G

Reverse Recovery Time ––– 60 90 ns TJ = 25°C, IF = 21A, VR=15 V
Reverse Recovery Charge ––– 94 140 nC di/dt = 100A/µs



Reverse Recovery Time ––– 62 93 ns TJ = 125°C, IF = 21A, VR=15 V
Reverse Recovery Charge ––– 88 130 nC di/dt = 100A/µs



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D

S

IRF6601

)
A

(

t

n

e

r

r

u
C
e

c

r

u

o
S

-

o

t

-

n

i

a

r
D

,
I

1000

100

D

VGS

TOP 10V

5.0V

4.5V

4.0V

3.5V

3.3V

3.0V
BOTTOM 2.7V

2.7V

20µs PULSE WIDTH
Tj = 25°C

10

0.1 1 10 100

VDS, Drain-to-Sour ce Voltage (V)

1000

1000

)
A

(

t

n

e

r

r

u
C
e

c

r

100

u

o
S

-

o

t

-

n

i

a

r
D

,

D

I

VGS

TOP 10V

5.0V

4.5V

4.0V

3.5V

3.3V

3.0V
BOTTOM 2.7V

2.7V

20µs PULSE WIDTH
Tj = 150°C

10

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

2.0

I =

D

26A

)

Α

(

t

n

e

r

r

u
C
e

c

r

100

u

o
S

-

o

t

-

n

i

a

r
D

,

D

I

10

TJ = 25°C

TJ = 150°C

V

= 15V

DS

20µs PULSE WIDTH

2.5 3.0 3.5 4.0

VGS, Gate-t o-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

1.5

1.0

(Normalized)

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature ( C)

J

Fig 4. Normalized On-Resistance

V =

GS

°

10V

Vs. Temperature

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IRF6601

6000

5000

4000

3000

2000

C, Capacit ance (pF)

1000

0

1 10 100

V

=

0V,

GS

C

=

iss gs gd , ds

C

=

rss gd

C

=

oss ds gd

V , Drain-to-Source Voltage (V)

DS

f = 1MHz

C

+ C
C
C

+ C

C

iss

C

oss

C

rss

C SHORTED

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

1000.0

)
A

(

t

100.0

n

e

r

r

u
C
n

i

a

r

10.0

D
e

s

r

e

v

e
R

,

D
S

I

TJ = 150°C

TJ = 25°C

1.0

0.1

0.0 0.5 1.0 1.5 2.0
VSD, Source-toDrain V oltage (V)

V

GS

= 0V

12

D

I =

21A

10

8

6

4

GS

2

V , Gate-to-Source Voltage (V)

0

0 20 40 60 80

Q , Total G a te Ch a rge (nC)

G

V = 16V

DS

V = 10V

DS

V = 4V

DS

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

1000

)
A

(

t

n

e

r

r

100

u
C
e

c

r

u

o
S

-

o

t

-

n

10

i

a

r
D
,

D

I

Tc = 25°C
Tj = 150°C
Single Pulse

1

0 1 10 100

V

OPERATION IN THIS AREA
LIMITED BY RDS(on)

, Drain-toSource V oltage (V)

DS

100µsec

1msec

10msec

Fig 7. Typical Source-Drain Diode

Fig 8. Maximum Safe Operating Area

Forward Voltage

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IRF6601

30

25

20

15

10

D

I , Drain Cur r ent (A)

5

0

25 50 75 100 125 150

T , Case Temperature ( C)

C

°

Fig 9. Maximum Drain Current Vs.

Ambient Temperature

100

R

V

DS

V

GS

R

G

V

GS

Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

D

D.U.T.

Fig 10a. Switching Time Test Circuit

V

DS

90%

10%
V

GS

t

d(on)tr

t

d(off)tf

Fig 10b. Switching Time Waveforms

+

V

DD

-

D = 0.50

10

thJA

0.20

0.10

0.05

1

0.02

0.01

SINGLE PULSE

0.1

Thermal Response (Z )

0.01

0.00001 0.0001 0.001 0.01 0.1 1 10 100

(THERMAL RESPONSE)

t , Rectangular Pulse Duration (sec)

1

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

J DM thJA A

1 2

P

DM

t

1

t

2

Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

www.irf.com 5

IRF6601

)

0.006

Ω

(
e

c

n

a

t

s

i

s

e
R
n
O
e

c

r

u

o
S

-

o

t

-

n

i

a

r
D

,

)

n

o

(
S

D

R

0.005

0.004

0.003

V

GS

= 4.5V

V

GS

= 10V

0 60 120 180 240

ID , Drain Current ( A)

Fig 12. On-Resistance Vs. Drain Current

Current Regulator

Same Type as D.U.T.

.2µF

12V

V

GS

50KΩ

.3µF

D.U.T.

3mA

I

G

Current Sampling Resistors

V

GS

+

V

DS

-

I

D

V

G

QGSQ

Q

G

GD

Charge

)

0.02

Ω

(
e

c

n

a

t

s

i

s

e
R
n
O
e

c

r

0.01

u

o
S

­o

t

-

n

i

a

r
D
,

)

n

o

(
S
D

0.00

R

ID = 26A

2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0

V

Gate -to - Source Voltage (V)

GS,

Fig 13. On-Resistance Vs. Gate Voltage

160

TOP

120

BOTTOM

I

D

9.4A
17A
21A

Fig 13a&b. Basic Gate Charge Test Circuit

and Waveform

15V

V

(BR)DSS

t

p

I

AS

V

R

G

20V

L

DS

D.U.T

I

AS

Ω

0.01

t

p

Fig 14a&b. Unclamped Inductive Test circuit

and Waveforms

DRIVER

+

V

DD

-

A

80

40

AS

E , Single Pulse Avalanche Energy (mJ)

0

25 50 75 100 125 150

Starting T , Junction Temperature ( C)

J

Fig 14c. Maximum Avalanche Energy

Vs. Drain Current

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°

DirectFET Board Footprint

IRF6601

DirectFET

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Tape and Reel Dimension

IRF6601

DirectFET Outline Dimension

Notes:

 Repetitive rating; pulse width limited by max. junction temperature.
 Pulse width ≤ 400µs; duty cycle ≤ 2%.
 Surface mounted on 1 in square Cu board
 Used double sided cooling, mounting pad
 Mounted on minimum footprint full size board with metalized back and with small clip heatsink
 TC measured with thermal couple mounted to top (Drain) of part.

 Starting T

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: [phone]

= 25°C, L = 0.30mH, RG = 25W, I

J

This product has been designed and qualified for the consumer market.

= 21A. (See Figure 14)

AS

Data and specifications subject to change without notice.

Qualification Standards can be found on IR’s Web site.

TAC Fax: [phone]

Visit us at www.irf.com for sales contact information.03/02

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