Datasheet IRF644NS, IRF644NL, IRF644N Datasheet (International Rectifier)

l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements

Description

Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

G

TO-220AB

IRF644N

PD - 94107

IRF644N

IRF644NS

IRF644NL

HEXFET® Power MOSFET

D

S

D2Pak

IRF644NS

V

R

DS(on)

= 250V

DSS

= 240mΩ

ID = 14A

TO-262

IRF644NL

The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to

2.0W in a typical surface mount application.

Absolute Maximum Ratings

Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 14 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 9.9 A I

DM

PD @TC = 25°C Power Dissipation 150 W

V

GS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt  7.9 V/ns T

J

T

STG

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Pulsed Drain Current  56

Linear Derating Factor 1.0 W/°C Gate-to-Source Voltage ± 20 V Single Pulse Avalanche Energy 180 mJ Avalanche Current 8.4 A Repetitive Avalanche Energy 15 mJ

Operating Junction and -55 to + 175 Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)

°C

3/15/01

IRF644N/644NS/644NL

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

D

L

S

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage 250 ––– ––– VVGS = 0V, ID = 250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.33 ––– V/°C Reference to 25°C, ID = 1mA

J

Static Drain-to-Source On-Resistance ––– ––– 240 mΩ VGS = 10V, ID = 8.4A  Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA Forward Transconductance 8.8 ––– ––– SVDS = 50V, ID = 8.4A

Drain-to-Source Leakage Current

––– ––– 25 ––– ––– 250 VDS = 200V, VGS = 0V, TJ = 150°C

Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100

VDS = 250V, VGS = 0V

µA

nA

VGS = -20V Total Gate Charge ––– ––– 54 ID = 8.4A Gate-to-Source Charge ––– ––– 9.2 nC VDS = 200V Gate-to-Drain ("Miller") Charge ––– ––– 26 VGS = 10V, See Fig. 6 and 13 Turn-On Delay Time ––– 10 ––– VDD = 125V Rise Time ––– 21 ––– ID = 8.4A Turn-Off Delay Time ––– 30 ––– RG = 6.2Ω

ns

Fall Time ––– 17 ––– VGS = 10V, See Fig. 10 

4.5

Internal Drain Inductance

Internal Source Inductance ––– –––

––– –––

7.5

Between lead,

6mm (0.25in.)

nH

from package

and center of die contact Input Capacitance ––– 1060 ––– VGS = 0V Output Capacitance ––– 140 ––– VDS = 25V Reverse Transfer Capacitance ––– 38 ––– pF ƒ = 1.0MHz, See Fig. 5

D

G

S

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

Continuous Source Current MOSFET symbol (Body Diode) Pulsed Source Current integral reverse (Body Diode)

––– –––

14

56

showing the

A

p-n junction diode.

G

Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 14A, VGS = 0V  Reverse Recovery Time ––– 165 250 ns TJ = 25°C, IF = 14A Reverse Recovery Charge ––– 1.0 1.6 nC di/dt = 100A/µs



Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Thermal Resistance

Parameter Typ. Max. Units

R

θJC

R

θCS

R

θJA

R

θJA

Junction-to-Case ––– 1.0 Case-to-Sink, Flat, Greased Surface  0.50 ––– °C/W Junction-to-Ambient ––– 62 Junction-to-Ambient (PCB mount)** ––– 40

2 www.irf.com

D

S

IRF644N/644NS/644NL

100

10

1

, Drain-to-Source Current (A)

D

I

VGS TOP 15V 10V

8.0V

7.0V

6.0V

5.5V

5.0V BOTTOM 4.5V

4.5V

20µs PULSE WIDTH Tj = 25°C

0.1

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

100

T = 175 C

°

J

100

10

VGS TOP 15V 10V

8.0V

7.0V

6.0V

5.5V

5.0V BOTTOM 4.5V

4.5V

1

, Drain-to-Source Current (A)

D

I

20µs PULSE WIDTH Tj = 175°C

0.1

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

3.5

3.0

I =

D

14A

2.5

°

T = 25 C

J

10

2.0

1.5

(Normalized)

1.0

D

I , Drain-to-Source Current (A)

V = 50V

DS

1

4 6 8 10 11 13 15

V , Gate-to-Source Voltage (V)

GS

20µs PULSE WIDTH

Fig 3. Typical Transfer Characteristics

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140160 180

T , Junction Temperature ( C)

J

Fig 4. Normalized On-Resistance

V =

GS

°

10V

Vs. Temperature

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IRF644N/644NS/644NL

10000

1000

V

= 0V, f = 1 MHZ

GS

C

= C

iss

gs

C

= C

rss

gd

C

= C

ds

+ C

oss

+ Cgd, C

gd

Ciss

Coss

100

C, Capacitance(pF)

Crss

10

1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

100

SHORTED

ds

20

I =

8.4A

D

16

12

8

4

GS

V , Gate-to-Source Voltage (V)

0

0 12 24 36 48 60

Q , Total Gate Charge (nC)

G

V = 200V

DS

V = 125V

DS

V = 50V

DS

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

1000

OPERATION IN THIS AREA

T = 175 C

10

1

SD

I , Reverse Drain Current (A)

0.1

0.0 0.4 0.8 1.1 1.5

V ,Source-to-Drain Voltage (V)

SD

°

J

°

T = 25 C

J

V = 0 V

GS

Fig 7. Typical Source-Drain Diode

100

10

1

, Drain-to-Source Current (A)

D

Tc = 25°C

I

Tj = 175°C Single Pulse

0.1 1 10 100 1000

Fig 8. Maximum Safe Operating Area

LIMITED BY RDS(on)

V

, Drain-toSource Voltage (V)

DS

100µsec

1msec

10msec

Forward Voltage

4 www.irf.com

IRF644N/644NS/644NL

(

)

15

12

9

6

D

I , Drain Current (A)

3

0

25 50 75 100 125 150 175

T , Case Temperature ( C)

C

°

Fig 9. Maximum Drain Current Vs.

Case Temperature

10

R

V

DS

V

GS

R

G

V

GS

Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %

D

D.U.T.

Fig 10a. Switching Time Test Circuit

V

DS

90%

10% V

GS

t

d(on)tr

t

d(off)tf

Fig 10b. Switching Time Waveforms

+

V

DD

-

thJC

1

D = 0.50

0.20 P

0.10

0.1

0.05

Thermal Response (Z )

0.01

0.02

0.01

0.00001 0.0001 0.001 0.01 0.1 1

SINGLE PULSE

THERMAL RESPONSE

Notes:

1. Duty factor D =t / t

2. Peak T =P x Z + T

t , Rectangular Pulse Duration (sec)

1

J DM thJC C

DM

t



1 2

1

t

2

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

www.irf.com 5

IRF644N/644NS/644NL

A

15V

DRIVER

R

20V

V

DS

G

t

L

D.U.T

I

AS

0.01

p

Ω

Fig 12a. Unclamped Inductive Test Circuit

V

(BR)DSS

t

p

I

AS

Fig 12b. Unclamped Inductive Waveforms

300

TOP

240

+

V

DD

-

180

120

60

AS

E , Single Pulse Avalanche Energy (mJ)

0

25 50 75 100 125 150 175

Starting T , Junction Temperature ( C)

J



BOTTOM

I

D

3.4A

5.9A

8.4A

°

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Current Regulator

Same Type as D.U.T.

50KΩ

Q

G

V

GS

Q

GS

V

G

Q

GD

Charge

Fig 13a. Basic Gate Charge Waveform

12V

Fig 13b. Gate Charge Test Circuit

.2µF

V

GS

.3µF

D.U.T.

3mA

I

G

Current Sampling Resistors

I

D

6 www.irf.com

+

V

DS

-

IRF644N/644NS/644NL

Peak Diode Recovery dv/dt Test Circuit

D.U.T*

+



Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance Current Transformer

-

+



-



-

+



R

G

V

GS

• dv/dt controlled by R

• ISD controlled by Duty Factor "D"

G

• D.U.T. - Device Under Test

+

V

DD

-

* Reverse Polarity of D.U.T for P-Channel

Driver Gate Drive

P.W.

Period

D =

P.W.

Period

VGS=10V

[ ] ***

D.U.T. ISDWaveform

Reverse Recovery Current

Re-Applied Voltage

D.U.T. VDSWaveform

Inductor Curent

*** V

= 5.0V for Logic Level and 3V Drive Devices

GS

Fig 14. For N-channel HEXFET

Body Diode Forward

Current

di/dt

Diode Recovery

dv/dt

Body Diode Forward Drop

Ripple ≤ 5%

®

power MOSFETs

V

DD

[ ]

I

[ ]

SD

www.irf.com 7

IRF644N/644NS/644NL

)

(

)

A

Package Outline

TO-220AB

Dimensions are shown in millimeters (inches)

.415

2.87 (.113

2.62 (.103

15.24 (.600

14.84 (.584

14.09 (.555

13.47 (.530

10.54

10.29 (.405

1 2 3

4

6.47 (.255

6.10 (.240

1.15 (.045 M IN

4.06 (.160

3.55 (.140

3.78 (.149

3.54 (.139

- A -

4.69 (.185

4.20 (.165

- B -

1.32 (.052

1.22 (.048

LEAD ASSIGNMENTS 1 - GAT E 2 - DRA IN 3 - SOU RC E 4 - DRA IN

1.40 (.055

3X

1.15 (.045

2.54 (.100

NOTES: 1 DIM E N S IO N IN G & T O L E R A N C IN G P E R A N S I Y 1 4 . 5 M , 1 9 8 2 . 3 OU T L IN E C O N F O R M S T O J E D E C O U T L IN E T O - 2 2 0 A B . 2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO N OT INCLU DE BURRS.

2X

Part Marking Information

TO-220AB

EXAMPLE : THIS IS AN IRF1010 W IT H ASSEM BL Y LOT CO D E 9 B1M

0.93 (.037

3X

0.69 (.027

0.36 (.014) M B A M

INTERN ATIONAL RE CTIFIER L OGO

ASSEMBLY LOT C OD E

3X

2.92 (.115

2.64 (.104

IRF1010

9246

9B 1M

0.55 (.022

0.46 (.018

PART NUM BER

DATE CODE (YYWW) YY = YEAR WW = WEEK

8 www.irf.com

D2Pak Package Outline

A

IRF644N/644NS/644NL

10.54 (.415)

1.40 (.055) MA X.

1.78 (.070)

1.27 (.050)

1.40 (.055)

3X

1.14 (.045)

5.08 (.200)

NOTE S: 1 DIMENSIONS AFTER SOLDER DIP. 2 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 CONTROLLING DIMENSION : INCH. 4 HEATSINK & LEAD DIMENSIONS DO NOT INCLUDE BURRS.

2

Pak Part Marking Information

D

10.29 (.405)

- A 2

1 3

15.49 (.610)

14.73 (.580)

0.93 (.037)

3X

0.69 (.027)

0.2 5 ( .0 10 ) M B A M

4.69 (.185)

4.20 (.165)

5.28 (.208)

4.78 (.188)

0.55 (.022)

0.46 (.018)

- B -

1.32 (.052)

1.22 (.048)

2.79 (.110)

2.29 (.090)

1.39 (.055)

1.14 (.045)

LEAD ASSIGNMENTS 1 - G ATE 2 - D RA IN 3 - S OURCE

10.16 (.400) REF .

6.47 (.255)

6.18 (.243)

2.61 (.103)

2.32 (.091)

8.89 (.350) REF .

MINIMUM RECOMMENDED FOOTPRINT

11.43 (.450)

8.89 (.350)

17.78 (.700)

3.81 (.150)

2.08 (.082) 2X

2.54 (.100) 2X

INTERNATIONAL RE CTIFIER L O G O

A S SEMBLY LO T CO D E

F530S

9246

9 B 1 M

PART NUMB ER

DATE CODE (Y Y W W ) YY = YEAR WW = WEEK

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IRF644N/644NS/644NL

TO-262 Package Outline

TO-262 Par t Mar king Information

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D2Pak Tape & Reel Information

)

(

)

TRR

4.10 (.161

3.90 (.153

FEED DIRECTION

TRL

FEED DIRECTION

1.85 (.073

1.65 (.065

10.90 (.429)

10.70 (.421)

IRF644N/644NS/644NL

1.60 (.063

1.50 (.059

11.60 (.457)

11.40 (.449)

16.10 (.634)

15.90 (.626)

1.60 (.063)

1.50 (.059)

1.75 (.069)

1.25 (.049)

15.42 (.609)

15.22 (.601)

0.368 (.0145)

0.342 (.0135)

24.30 (.957)

23.90 (.941)

4.72 (.136)

4.52 (.178)

13.50 (.532)

12.80 (.504)

330.00

14.173

MAX.

NOT ES :

1. CO M FO R MS TO E IA-418.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION MEASU RE D @ HU B.

4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. (See fig. 11)

 Starting T

RG = 25Ω, I

 I

SD

= 25°C, L = 5.0µH

J

= 8.4A. (See Figure 12)

AS

≤ 8.4A, di/dt ≤ 378A/µs, V

DD

≤ V

(BR)DSS

,

TJ ≤ 175°C

 Pulse width ≤ 400µs; duty cycle ≤ 2%.  This is a typical value at device destruction

and represents operation outside rated limits.

This product has been designed and qualified for the (IRF644N) automotive [Q101]

27.40 (1.079)

23.90 (.941) 4

60.00 (2.362) M IN .

30 .4 0 (1.19 7)

26.40 (1.039

24.40 (.961

3

 This is a calculated value limited to T

M A X .

4

= 175°C .

J

 This is only applied to TO-220AB package.

**When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint & soldering techniques refer to

application note #AN-994.

Data and specifications subject to change without notice.

& (IRF644NS/L) industrial market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information. 3/01

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Datasheet IRF644NS, IRF644NL, IRF644N Datasheet (International Rectifier)

Specifications and Main Features

Frequently Asked Questions

User Manual