Datasheet irf640_irf640fp Datasheet

N-channel 200V - 0.15Ω - 18A TO-220/TO-220FP

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General features

Type V

IRF640 200V <0.18Ω 18A

IRF640FP 200V <0.18Ω 18A

DSS

R

DS(on)

IRF640

IRF640FP

Mesh overlay™ Power MOSFET

I

D

■ Extremely high dv/dt capability

■ Very low intrinsic capacitances

■ Gate charge minimized

Description

This power MOSFET is designed using the
company’s consolidated strip layout-based MESH
OVERLAY™ process. This technology matches
and improves the performances compared with
standard parts from various sources.

Applications

■ Switching application

3

2

1

TO-220 TO-220FP

Internal schematic diagram

2

1

Order codes

Part number Marking Package Packaging

September 2006 Rev 9 1/14

IRF640 IRF640 TO-220 Tube

IRF640FP IRF640FP TO-220FP Tube

www.st.com

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Contents IRF640 - IRF640FP

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

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IRF640 - IRF640FP Electrical ratings

1 Electrical ratings

Table 1. Absolute maximum ratings

Val ue

Symbol Parameter

TO-220 TO-220FP

Unit

I

V

V

DM

P

DS

GS

I

D

I

D

TOT

Drain-source voltage (VGS = 0) 200 V

Gate-source voltage ± 20 V

Drain current (continuous) at TC = 25°C 18 18

Drain current (continuous) at TC=100°C 11 11

(2)

Drain current (pulsed) 72 72

Total dissipation at TC = 25°C 125 40 W

Derating factor 1.0 0.32 W/°C

(3)

dv/dt

Peak diode recovery voltage slope 5 5 V/ns

Insulation withstand voltage (RMS) from all

V

ISO

three leads to external heat sink
(t=1s; Tc= 25°C)

T

T

stg

1. Limited only by maximum temperature allowed

2. Pulse width limited by safe operating area

3. I

≤18A, di/dt ≤ 300A/µs, VDD ≤ V

SD

Operating junction temperature

J

Storage temperature

(BR)DSS

, Tj ≤ T

Table 2. Thermal data

Symbol Parameter

JMAX

(1)

(1)

(1)

-- 2500 V

150

-65 to 150

Val ue

TO-220 TO-220FP

A

A

A

°C

Unit

R

thj-case

R

thj-a

Thermal resistance junction-case Max 1.0 3.12 °C/W

Thermal resistance junction-ambient Max 62.5 °C/W

Rthc-sink Thermal resistance case-sink typ 0.5 °C/W

T

Maximum lead temperature for soldering

l

purpose

300 °C

Table 3. Avalanche characteristics

Symbol Parameter Value Unit

I

AS

E

AS

Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)

Single pulse avalanche energy
(starting Tj=25°C, Id=Iar, Vdd=50V)

18 A

280 mJ

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Electrical characteristics IRF640 - IRF640FP

2 Electrical characteristics

(T

=25°C unless otherwise specified)

CASE

Table 4. On/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

V

GS(th)

R

DS(on)

Drain-source breakdown
voltage

Zero gate voltage drain
current (VGS = 0)

Gate body leakage current

= 0)

(V

DS

Gate threshold voltage

Static drain-source on
resistance

= 250 µA, VGS= 0

I

D

V

= Max rating,

DS

V

= Max rating @125°C

DS

= ±20V

V

GS

= VGS, ID = 250µA

V

DS

VGS= 10V, ID= 9A

200 V

1

10

± 100 nA

234V

0.15 0.18 Ω

Table 5. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

V

> I

(1)

g

fs

C

C

C

Forward transconductance

Input capacitance

iss

Output capacitance

oss

Reverse transfer

rss

capacitance

DS

ID = 9A

V

DS

x R

D(on)

DS(on)max,

=25V, f=1 MHz, VGS=0

711 S

1200

1560

200

260

60

80

µA
µA

pF
pF
pF

55
10
21

72 nC

nC
nC

Q

Q

Q

1. Pulsed: pulse duration=300µs, duty cycle 1.5%

Total gate charge

g

Gate-source charge

gs

Gate-drain charge

gd

VDD=160V, ID = 18A
V

GS

=10V

Table 6. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

V

= 100V, ID = 9A,

t

d(on)

t

t

r(Voff)

t

t

Turn-on Delay Time
Rise Time

r

Off-voltage rise time
fall time

f

cross-over time

c

DD

= 4.7Ω, V

R

G

GS

= 10V

(see Figure 14)

VDD=160V, ID=18A,

=4.7Ω, VGS=10V

R

G

(see Figure 16)

13
27

21
25
50

1735ns

ns

27

ns

32

ns

65

ns

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IRF640 - IRF640FP Electrical characteristics

Table 7. Source drain diode

Symbol Parameter Test conditions Min Typ. Max Unit

I

SD

I

SDM

V

SD

t

Q

I

RRM

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration=300µs, duty cycle 1.5%

Source-drain current 18 A

(1)

Source-drain current (pulsed) 72 A

(2)

Forward on voltage

rr

Reverse recovery time
Reverse recovery charge

rr

Reverse recovery current

I

=18A, VGS=0

SD

=18A,

I

SD

di/dt = 100A/µs,

=50V, Tj=150°C

V

DD

(see Figure 16)

240

1.8
15

1.5 V

ns

µC

A

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Electrical characteristics IRF640 - IRF640FP

2.1 Electrical characteristics (curves)

Figure 1. Safe operating area for TO-220 Figure 2. Thermal impedance for TO-220

Figure 3. Safe operating area for TO-220/FP Figure 4. Thermal impedance for TO-220/FP

Figure 5. Output characterisics Figure 6. Transfer characteristics

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IRF640 - IRF640FP Electrical characteristics

Figure 7. Transconductance Figure 8. Static drain-source on resistance

Figure 9. Gate charge vs gate-source voltage Figure 10. Capacitance variations

Figure 11. Normalized gate threshold voltage

vs temperature

Figure 12. Normalized on resistance vs

temperature

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Electrical characteristics IRF640 - IRF640FP

Figure 13. Source-drain diode forward

characteristics

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IRF640 - IRF640FP Test circuit

3 Test circuit

Figure 14. Switching times test circuit for

resistive load

Figure 16. Test circuit for inductive load

switching and diode recovery times

Figure 15. Gate charge test circuit

Figure 17. Unclamped Inductive load test

circuit

Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform

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Package mechanical data IRF640 - IRF640FP

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com

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IRF640 - IRF640FP Package mechanical data

TO-220 MECHANICAL DATA

DIM.

A 4.40 4.60 0.173 0.181

b 0.61 0.88 0.024 0.034

b1 1.15 1.70 0.045 0.066

c 0.49 0.70 0.019 0.027

D 15.25 15.75 0.60 0.620

E 10 10.40 0.393 0.409

e 2.40 2.70 0.094 0.106

e1 4.95 5.15 0.194 0.202

F 1.23 1.32 0. 048 0.052

H1 6.20 6.60 0.244 0.256

J1 2.40 2.72 0.094 0.107

L 13 14 0.511 0.551

L1 3.50 3.93 0.137 0.154

L20 16.40 0.645

L30 28.90 1.137

øP 3.75 3.85 0.147 0.151

Q 2.65 2.95 0.104 0.116

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

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Package mechanical data IRF640 - IRF640FP

TO-220FP MECHANICAL DATA

DIM.

A 4.4 4.6 0.173 0.181

B 2.5 2.7 0.098 0.106

D 2.5 2.75 0.09 8 0.108

E 0.45 0.7 0 .017 0.027

F 0.75 1 0.030 0.039

F1 1.15 1.7 0.045 0.067

F2 1.15 1.7 0.045 0.067

G 4.95 5.2 0.195 0.204

G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409

L2 16 0.630

L3 28.6 30.6 1 .126 1.204

L4 9.8 10.6 .038 5 0.417

L5 2.9 3.6 0.114 0.141

L6 15.9 16.4 0 .626 0.645

L7 9 9.3 0 .354 0.366

Ø 3 3.2 0.118 0.126

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

E

A

D

B

L3

L6

L7

F1

F

G1

H

F2

123

L4

L2

L5

G

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IRF640 - IRF640FP Revision history

5 Revision history

Table 8. revision history

Date Revision Changes

09-Sep-2004 8 Final version

04-Sep-2006 9 New template, no content change

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IRF640 - IRF640FP

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