Datasheet IRF5210S Datasheet (International Rectifier)

l Advanced Process Technology
l Surface Mount (IRF5210S)
l Low-profile through-hole (IRF5210L)
l 175°C Operating Temperature
l Fast Switching
l P-Channel
l Fully Avalanche Rated

Description

Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for
use in a wide variety of applications.

2

Pak is a surface mount power package capable of

The D
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in
any existing surface mount package. The D
for high current applications because of its low internal
connection resistance and can dissipate up to 2.0W in a
typical surface mount application.
The through-hole version (IRF5210L) is available for low­profile applications.

2

Pak is suitable

PD - 91405C

IRF5210S/L

HEXFET® Power MOSFET

D

G

S

2

D Pak

V

DSS

R

DS(on)

ID = -40A

TO-262

= -100V

= 0.06Ω

Absolute Maximum Ratings

Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ -10V -40
ID @ TC = 100°C Continuous Drain Current, VGS @ -10V -29 A
I

DM

PD @TA = 25°C Power Dissipation 3.8 W
PD @TC = 25°C Power Dissipation 200 W

V

GS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt  -5.0 V/ns
T

J

T

STG

Pulsed Drain Current  -140

Linear Derating Factor 1.3 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 780 mJ
Avalanche Current -21 A
Repetitive Avalanche Energy 20 mJ

Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )

Thermal Resistance

Parameter Typ. Max. Units

R

θJC

R

θJA

Junction-to-Case ––– 0.75
Junction-to-Ambient ( PCB Mounted,steady-state)** –– – 40

°C/W

°C

5/13/98

IRF5210S/L

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

S

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage -100 ––– ––– V VGS = 0V, ID = -250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– -0.11 ––– V/°C Reference to 25°C, ID = -1mA

J

Static Drain-to-Source On-Resistance ––– ––– 0.06 Ω VGS = -10V, ID = -24A 
Gate Threshold Voltage -2.0 ––– -4.0 V VDS = VGS, ID = -250µA
Forward Transconductance 10 ––– ––– S VDS = -50V, ID = -21A

Drain-to-Source Leakage Current

––– ––– -25

––– ––– -250 VDS = -80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100

VDS = -100V, VGS = 0V

µA

nA

VGS = -20V
Total Gate Charge ––– ––– 180 ID = -21A
Gate-to-Source Charge ––– ––– 25 nC VDS = -80V
Gate-to-Drain ("Miller") Charge ––– ––– 97 VGS = -10V, See Fig. 6 and 13 
Turn-On Delay Time ––– 17 ––– VDD = -50V
Rise Time ––– 86 ––– ID = -21A
Turn-Off Delay Time ––– 79 ––– RG = 2.5Ω

ns

Fall Time ––– 81 ––– RD = 2.4Ω, See Fig. 10 
Internal Source Inductance

––– –––

7.5

Between lead,

nH

and center of die contact
Input Capacitance ––– 2700 ––– VGS = 0V
Output Capacitance ––– 790 ––– pF VDS = -25V
Reverse Transfer Capacitance ––– 450 ––– ƒ = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

 Starting T

RG = 25Ω, I

 I

TJ ≤ 175°C

** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.

Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode) 

––– –––

––– –––

-40

-140

showing the

A

p-n junction diode.
Diode Forward Voltage ––– –– – -1.6 V TJ = 25°C, IS = -24A, VGS = 0V 
Reverse Recovery Time ––– 170 260 ns TJ = 25°C, IF = -21A
Reverse Recovery Charge ––– 1.2 1.8 µC di/dt = -100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

 Pulse width ≤ 300µs; duty cycle ≤ 2%.

= 25°C, L = 3.1mH

J

= -21A. (See Figure 12)

AS

≤ -21A, di/dt ≤ -480A/µs, V

SD

DD

≤ V

(BR)DSS

 Uses IRF5210 data and test conditions

,



D

G

S

IRF5210S/L

A

A

)

A

A

1000

VGS
TO P - 15 V

- 10V

- 8.0 V

- 7.0 V

- 6.0 V

- 5.5 V

- 5.0 V
BOT TO M - 4.5V

100

10

D

-I , Dra in-to-Sou rc e C u rre nt (A )

-4.5 V
40µs PULSE WIDTH

T = 2 5°C

1

0.1 1 10 100

-V , Drain-to-Source Voltage (V)

DS

c

Fig 1. Typical Output Characteristics

1000

1000

VGS
TOP - 15V

- 10V

- 8.0V

- 7.0V

- 6.0V

- 5.5V

- 5.0V
BOTTOM - 4.5V

100

10

D

-I , Drain-to-Source Current (A )

-4. 5V

40µs PULSE WIDTH
T = 175°C

1

0.1 1 10 10 0

-V , Dra in-t o- S o u rc e Voltage (V

DS

C

Fig 2. Typical Output Characteristics

3.0

I = - 3 5 A

D

100

10

D

-I , Drain-to-Source C urrent (A)

1

45678910

-V , Ga te-to- So urc e V o ltage (V)

GS

T = 25°C

J

T = 175°C

J

V = -50 V

DS

40µs PULSE W IDTH

Fig 3. Typical Transfer Characteristics

2.5

2.0

1.5

(No rm ali zed )

1.0

0.5

DS (on)

R , D r a in-to -S o u rc e O n R e s is ta nc e

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

T , J unc tion T empe rature ( °C )

J

Fig 4. Normalized On-Resistance

Vs. Temperature

V = - 10 V

GS

IRF5210S/L

A

)

A

)

A

A

)

g

6000

5000

4000

3000

2000

C, Capacitance (pF)

1000

0

1 10 100

V = 0V, f = 1M Hz

GS

C = C + C , C S H O RTE D

iss gs gd ds

C = C

rss g d

C = C + C

oss ds g d

C

iss

C

oss

C

rss

-V , Drai n-to - S o ur c e Voltage (V

DS

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

1000

20

I = -2 1A

16

12

GS

D

8

4

V = - 80 V

DS

V = - 50 V

DS

V = - 20 V

DS

-V , Gate-to - S ou r ce V o ltag e (V)

FOR TEST CIRCU IT

0

0 40 80 120 160 200

Q , To ta l Ga te C h a rge (nC

G

SE E F IG U R E 13

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

1000

OP ER A T IO N IN T HIS A R E A L IMITE D
BY R

DS(on)

100

T = 175°C

J

T = 25°C

J

10

SD

-I , Reverse Drain Current (A)

1

0.4 0.8 1.2 1.6 2.0 2.4

-V , Source-to-Drain Voltage (V)

SD

V = 0V

Fig 7. Typical Source-Drain Diode

Forward Voltage

GS

100

10

D

-I , Drain C u rren t (A )

T = 25 °C

C

T = 17 5 °C

J

le P ulse

Sin

1

1 10 100 1000

-V , Dra in -to -Sou rc e V o ltage (V

DS

10µs

100µs

1ms

10ms

Fig 8. Maximum Safe Operating Area

IRF5210S/L

50

40

30

20

D

-I , Drain Current (A)

10

0

25 50 75 100 125 150 175

T , Case Temperature ( C)

C

°

Fig 9. Maximum Drain Current Vs.

Case Temperature

1

R

D.U.T.

D

-

+

V

DS

V

GS

R

G

-10V

Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

V

GS

10%

90%
V

DS

t

d(on)tr

t

d(off)tf

Fig 10b. Switching Time Waveforms

V

DD

D = 0.50

thJC

0.20

0.1

0.10
P

1 2

DM

t

1

t

2

0.05

Thermal Response (Z )

0.01

0.02

0.01

0.00001 0.0001 0.001 0.01 0.1 1

SINGLE PULSE

(THERMAL RESPONSE)

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

t , Rectangular Pulse Duration (sec)

1

J DM thJC C

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

IRF5210S/L

(BR)

A

)

L

D.U.T

I

AS

0.01

t

p

DRIVER

Ω

15V

V

DD

R

-20V

V

DS

G

Fig 12a. Unclamped Inductive Test Circuit

I

AS

t

p

V

DSS

2000

I
TO P -8.6A

D

-15A

1600

A

1200

800

400

AS

E , S ingle Pu lse A valanc he E n ergy (m J)

0

25 50 75 100 125 150 175

Starting T , Junction Temperature (°C

J

BOT TO M -21 A

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Fig 12b. Unclamped Inductive Waveforms

Q

G

-10V

Q

GS

V

G

Q

GD

Charge

Fig 13a. Basic Gate Charge Waveform

Current Regulator

Same Type as D.U.T.

50KΩ

.2µF

12V

V

GS

.3µF

D.U.T .

-3mA

I

G

Current Sampling Resistors

I

-

+

D

Fig 13b. Gate Charge Test Circuit

V

DS

IRF5210S/L

Peak Diode Recovery dv/dt Test Circuit

D.U.T*

+



-



R

G

V

GS

* Reverse Polarity of D.U.T for P-Channel

Driver Gate Drive

P.W.

Period

+

Circuit Layout Considerations

• Low Stray Inductance



• Ground Plane

• Low Leakage Inductance
Current Transformer

-



-

• dv/dt controlled by R

• ISD controlled by Duty Factor "D"

+

G

• D.U.T. - Device Under Test

P.W.

D =

Period

+

V

DD

-

VGS=10V

[ ] ***

Reverse
Recovery
Current

Re-Applied
Voltage

D.U.T. ISDWaveform

Body Diode Forward

Current

D.U.T. VDSWaveform

Body Diode Forward Drop

Inductor Curent

Ripple ≤ 5%

*** V

= 5.0V for Logic Level and 3V Drive Devices

GS

di/dt

Diode Recovery

dv/dt

Fig 14. For P-Channel HEXFETS

V

DD

[ ]

I

[ ]

SD

IRF5210S/L

A

D2Pak Package Outline

10.54 (.415)

1.40 (.055)
MAX.

1.78 (.070)

1.27 (.050)

1.40 (.055)

3X

1.14 (.045)

5.08 (.200)

NOTE S:
1 DIMENSIONS AFTER SOLDER DIP.
2 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
3 CONTROLLING DIMENSION : INCH.
4 HEATSINK & LEAD DIMENSIONS DO NOT INCLUDE BURRS.

10.29 (.405)

- A ­2

1 3

15.49 (.610)

14.73 (.580)

0.93 (.037)

3X

0.69 (.027)

0.2 5 ( .0 10) M B A M

Part Marking Information

D2Pak

4.69 (.185)

4.20 (.165)

5.28 (.208)

4.78 (.188)

0.55 (.022)

0.46 (.018)

- B -

1.32 (.052)

1.22 (.048)

2.79 (.110)

2.29 (.090)

1.39 (.055)

1.14 (.045)

LEAD ASSIGNMENTS
1 - G ATE
2 - D RAIN
3 - S OU R CE

10.16 (.400)
REF.

6.47 (.255)

6.18 (.243)

2.61 (.103)

2.32 (.091)

8.89 (.350)
REF.

MINIMUM RECOMMENDED FOOTPRINT

11.43 (.450)

8.89 (.350)

17.78 (.700)

3.81 (.150)

2.08 (.082)
2X

2.54 (.100)
2X

INTERNATIONAL
RE CTIFIE R
LO G O

A S SEMBLY
LO T CO D E

F530S

9246

9 B 1 M

PART NUM B ER

DATE CODE
(YYW W )
YY = YEAR
WW = WEEK

Package Outline

TO-262 Outline

IRF5210S/L

Part Marking Information

TO-262

IRF5210S/L

Tape & Reel Information

D2Pak

TRR

1.60 (.063)

1.50 (.059)

4.10 (.161)

3.90 (.153)

1.60 (.063)

1.50 (.059)

0.368 (.0145)

0.342 (.0135)

FEED D IRECTION

1.85 (.073)

1.65 (.065)

TRL

10.90 (.429)

10.70 (.421)

FEED DIRECTION

13.50 (.532)

12.80 (.504)

330.00
(14.173)
MAX.

NOTES :

1. COM FO R M S TO E IA-418.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION MEASURED @ HU B.

4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

11.60 (.457)

11.40 (.449)

1.75 (.069)

1.25 (.049)

16.10 (.634)

15.90 (.626)

15.42 (.609)

15.22 (.601)

27.40 (1.079)

23.90 (.941)

4

26.4 0 (1.039)

24.40 (.961 )

3

24.30 (.957)

23.90 (.941)

4.72 (.136)

4.52 (.178)

60.00 (2.362)
MIN.

30.40 (1.197)
MAX .

4

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http://www.irf.com/ Data and specifications subject to change without notice. 5/98