Datasheet IRF3205S, IRF3205L Datasheet (International Rectifier)

PD - 94149

IRF3205S/L

HEXFET® Power MOSFET

l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated

G

D

S

V

DSS

R

DS(on)

ID = 110A

= 55V

= 8.0mΩ



Description

Advanced HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low on­resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of applications.

2

The D
accommodating die sizes up to HEX-4. It provides the highest power
capability and the lowest possible on-resistance in any existing surface
mount package. The D2Pak is suitable for high current applications
because of its low internal connection resistance and can dissipate up
to 2.0W in a typical surface mount application.
The through-hole version (IRF3205L) is available for low-profile
applications.

Pak is a surface mount power package capable of

D2Pak

IRF3205S

TO-262

IRF3205L

Absolute Maximum Ratings

Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 110 
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 80 A
I

DM

PD @TC = 25°C Power Dissipation 200 W

V

GS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt  5.0 V/ns
T

J

T

STG

Pulsed Drain Current  390

Linear Derating Factor 1.3 W/°C
Gate-to-Source Voltage ± 20 V
Avalanche Current 62 A
Repetitive Avalanche Energy 20 m J

Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)

°C

Thermal Resistance

Parameter Typ. Max. Units

R

θJC

R

θJA

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Junction-to-Case ––– 0.75 °C/W
Junction-to-Ambient (PCB mounted, steady-state)* ––– 40

03/09/01

IRF3205S/L

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

D

L

S

C

iss

C

oss

C

rss

E

AS

Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.057 ––– V/°C Reference to 25°C, ID = 1mA

J

Static Drain-to-Source On-Resistance ––– ––– 8.0 mΩ VGS = 10V, ID = 62A 
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 44 ––– ––– S VDS = 25V, ID = 62A

Drain-to-Source Leakage Current

––– ––– 25

––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100

VDS = 55V, VGS = 0V

µA

nA

VGS = -20V
Total Gate Charge ––– ––– 146 ID = 62A
Gate-to-Source Charge ––– ––– 35 nC VDS = 44V
Gate-to-Drain ("Miller") Charge ––– ––– 54 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 14 ––– VDD = 28V
Rise Time ––– 101 ––– ID = 62A
Turn-Off Delay Time ––– 50 ––– RG = 4.5Ω

ns

Fall Time ––– 65 ––– VGS = 10V, See Fig. 10 

4.5

Internal Drain Inductance

Internal Source Inductance ––– –––

––– –––

7.5

Between lead,

6mm (0.25in.)

nH

from package

and center of die contact
Input Capacitance ––– 3247 ––– VGS = 0V
Output Capacitance ––– 781 ––– VDS = 25V
Reverse Transfer Capacitance ––– 211 ––– pF ƒ = 1.0MHz, See Fig. 5
Single Pulse Avalanche Energy ––– 1050 264 mJ I

= 62A, L = 138µH

AS

D

G

S

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

 Starting T

RG = 25Ω, I

 I

SD

TJ ≤ 175°C

* When mounted on 1" square PCB ( FR-4 or G-10 Material ).

For recommended footprint and soldering techniques refer to application note #AN-994.

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Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)

––– –––

––– –––

110

390

showing the

A

p-n junction diode.
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 62A, VGS = 0V 
Reverse Recovery Time ––– 69 104 ns TJ = 25°C, IF = 62A
Reverse Recovery Charge ––– 143 215 nC di/dt = 100A/µs



Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

 Pulse width ≤ 400µs; duty cycle ≤ 2%.

= 25°C, L = 138µH

J

= 62A. (See Figure 12)

AS

≤ 62A, di/dt ≤ 207A/µs, V

DD

≤ V

(BR)DSS

 Calculated continuous current based on maximum allowable

junction temperature. Package limitation current is 75A.

 This is a typical value at device destruction and represents

,

operation outside rated limits.

This is a calculated value limited to T

= 175°C.

J

G

D

S

IRF3205S/L

1000

100

10

D

I , Drain-to-Source Current (A)

1

0.1 1 10 100

1000

100

VGS

TOP

15V
10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM

4.5V

4.5V

20µs PULSE WIDTH
T = 25 C

J

V , Drain-to-Source Voltage (V)

DS

°

T = 25 C

J

T = 175 C

J

°

1000

100

10

D

I , Drain-to-Source Current (A)

1

0.1 1 10 100

VGS

TOP

15V
10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM

4.5V

4.5V

20µs PULSE WIDTH
T = 175 C

J

V , Drain-to-Source Voltage (V)

DS

°

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

2.5

2.0

°

1.5

I =

D

107A

1.0

10

D

I , Drain-to-Source Current (A)

V = 25V

DS

1

4 6 8 10 12

V , Gate-to-Source Voltage (V)

GS

20µs PULSE WIDTH

Fig 3. Typical Transfer Characteristics

(Normalized)

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

T , Junction Temperature( C)

J

V =

Fig 4. Normalized On-Resistance

GS

°

10V

Vs. Temperature

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IRF3205S/L

6000

5000

4000

3000

2000

C, Capacitance(pF)

1000

0

1 10 100

V

= 0V, f = 1 MHZ

GS

C

= C

iss
rss
oss

gs

= C
= C

C
C

Ciss

Coss

Crss

+ Cgd, C

gd

+ C

ds

gd

VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

1000

T = 175 C

100

°

J

SHORTED

ds

16

I =

62A

D

14

12

10

8

6

4

GS

V , Gate-to-Source Voltage (V)

2

0

0 20 40 60 80 100 120

Q , Total Gate Charge (nC)

G

V = 44V

DS

V = 27V

DS

V = 11V

DS

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

10000

OPERATION IN THIS AREA LIMITED

1000

BY R

DS(on)

10us

10

°

T = 25 C

J

1

SD

I , Reverse Drain Current (A)

V = 0 V

0.1

0.2 0.8 1.4 2.0 2.6

V ,Source-to-Drain Voltage (V)

SD

Fig 7. Typical Source-Drain Diode

Fig 7. Typical Source-Drain Diode

Forward Voltage

Forward Voltage

GS

100

100us

D

I , Drain Current (A)I , Drain Current (A)

10

°

= 25 C

C

T T= 175 C
Single Pulse

1

1 10 100 1000

°

J

V , Drain-to-Source Voltage (V)

DS

1ms
10ms

Fig 8. Maximum Safe Operating Area

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120

LIMITED BY PACKAGE

100

80

60

40

D

I , Drain Current (A)

20

0

25 50 75 100 125 150 175

T , Case Temperature( C)

C

°

IRF3205S/L

R

D.U.T.

D.U.T.

D

t

t

d(off)tf

d(off)tf

+

V

-

V

V

DS

DS

V

V

GS

GS

R

R

G

G

10V

10V

Pulse Width ≤ 1 µs

Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

Fig 10a. Switching Time Test Circuit

V

V

DS

DS

90%

90%

10%

10%
V

V

GS

GS

t

t

d(on)tr

d(on)tr

DD

Fig 9. Maximum Drain Current Vs.

Fig 9. Maximum Drain Current Vs.

Case Temperature

Case Temperature

1

D = 0.50

Fig 10b. Switching Time Waveforms

Fig 10b. Switching Time Waveforms

thJC

0.20

0.1

0.10
P

0.05

0.02

Thermal Response(Z )

0.01

0.01

0.00001 0.0001 0.001 0.01 0.1 1

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

SINGLE PULSE

(THERMAL RESPONSE)

Notes:

1. Duty factor D = t / t

2. Peak T =P x Z + T

t , Rectangular Pulse Duration (sec)

1

J DM thJC C

DM

t

1 2

1

t

2

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IRF3205S/L

A

15V

DRIVER

R

20V

V

DS

G

t

L

D.U.T

I

AS

0.01

p

Ω

Fig 12a. Unclamped Inductive Test Circuit

V

(BR)DSS

t

p

I

AS

Fig 12b. Unclamped Inductive Waveforms

500

TOP

400

+

V

DD

-

300

200

100

AS

E , Single Pulse Avalanche Energy (mJ)

0

25 50 75 100 125 150 175

Starting T , Junction Temperature( C)

J

BOTTOM

I

D
25A
44A
62A

°

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Current Regulator

Same Type as D.U.T.

50KΩ

Q

G

12V

.2µF

.3µF

10 V

Q

GS

V

G

Fig 13a. Basic Gate Charge Waveform

Q

GD

Charge

V

GS

3mA

Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit

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D.U.T.

I

G

I

D

+

V

DS

-

IRF3205S/L

Peak Diode Recovery dv/dt Test Circuit

+





D.U.T

-

R

G

Driver Gate Drive

P.W.

+

Circuit Layout Considerations

• Low Stray Inductance



• Ground Plane

• Low Leakage Inductance
Current Transformer

-

-

• dv/dt controlled by R

G

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

Period

D =



P.W.

Period

+

+

V

DD

-

VGS=10V

*

D.U.T. ISDWaveform

Reverse
Recovery
Current

Re-Applied
Voltage

D.U.T. VDSWaveform

Inductor Curent

* V

= 5V for Logic Level Devices

GS

Body Diode Forward

Current

di/dt

Diode Recovery

dv/dt

Body Diode Forward Drop

Ripple ≤ 5%

V

DD

I

SD

Fig 14. For N-Channel HEXFETS

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IRF3205S/L

A

D2Pak Package Outline

10.54 (.415)

1.40 (.055)
MAX.

1.78 (.070)

1.27 (.050)

1.40 (.055)

3X

1.14 (.045)

5.08 (.200)

NOTES:
1 D IME NS IO N S AF T ER SOLD ER DIP.
2 DIMENSIONING & TOLE RA N C ING PER AN S I Y14.5M, 1982.
3 CONTROLLING DIMENSION : INCH.
4 HEATSINK & LEAD DIMENSIONS DO NOT INCLUDE BURRS.

2

D

Pak Part Marking Information

10.29 (.405)

- A ­2

1 3

15.49 (.610)

14.73 (.580)

0.93 (.037)

3X

0.69 (.027)

0.25 (.010) M B A M

4.69 (.185)

4.20 (.165)

5.28 (.208)

4.78 (.188)

0.55 (.022)

0.46 (.018)

- B -

1.32 (.052)

1.22 (.048)

2.79 (.110)

2.29 (.090)

1.39 (.055)

1.14 (.045)

LEAD ASSIGNMENTS
1 - G AT E
2 - D RA IN
3 - S OUR CE

10.16 (.400)
REF .

6.47 (.255)

6.18 (.243)

2.61 (.103)

2.32 (.091)

8.89 (.350)
REF .

MINIMUM RECOMMENDED FOOTPRINT

11.43 (.450)

8.89 (.350)

17.78 (.700)

3.81 (.150)

2.08 (.082)
2X

2.54 (.100)
2X

INTERNATIONAL
R ECT IF IER
L O GO

A S SEMBL Y
L O T CODE

F530S

9246

9 B 1 M

PART NUMBER

DATE CODE
(YYWW)
YY = YEAR
WW = WEEK

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TO-262 Package Outline

IRF3205S/L

TO-262 Part Marking Information

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IRF3205S/L

D2Pak Tape & Reel Information

TRR

1.60 (.063)

1.50 (.059)

4.10 (.161)

3.90 (.153)

FEED DIRECTION

TRL

FEED DIRECTION

1.85 (.073)

1.65 (.065)

10.90 (.429)

10.70 (.421)

11.60 (.457)

11.40 (.449)

16.10 (.634)

15.90 (.626)

1.60 (.063)

1.50 (.059)

1.75 (.069)

1.25 (.049)

15.42 (.609)

15.22 (.601)

0.368 (.0145)

0.342 (.0135)

24.30 (.957)

23.90 (.941)

4.72 (.136)

4.52 (.178)

13.50 (.532)

12.80 (.504)

330.00
(14.173)
MAX.

NOTES :

1. COM FO RM S TO EIA-418.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION MEASURED @ HUB.

4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

This product has been designed and qualified for the industrial market.

27.40 (1.079)

23.90 (.941)
4

60.00 (2.362)
M IN .

30.40 (1.197)

26.40 (1.039)

24.40 (.961)

3

MAX.

4

Data and specifications subject to change without notice.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: [phone]

TAC Fax: [phone]

Visit us at www.irf.com for sales contact information.3/01

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