Datasheet IRF3000 Datasheet (IOR)

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PD- 94423

IRF3000

SMPS MOSFET

HEXFET® Power MOSFET

Applications

l High frequency DC-DC converters

Benefits

l Low Gate to Drain Charge to Reduce

Switching Losses

l Fully Characterized Capacitance Including

Effective C

to Simplify Design, (See

OSS

App. Note AN1001)

l Fully Characterized Avalanche Voltage

and Current

V

DSS

300V 0.40W@VGS = 10V 1.6A

1

S

2

S

3

S

4

Top View

8

7

6

5

R

DS(on)

A

D

D

D

DG

max I

A

SO-8

Absolute Maximum Ratings

Parameter Max. Units

ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 1.6
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 1.3 A
I

DM

PD @TA = 25°C Power Dissipation 2.5 W

V

GS

dv/dt Peak Diode Recovery dv/dt  8.9 V/ns
T

J

T

STG

Pulsed Drain Current  13

Linear Derating Factor 0.02 W/°C
Gate-to-Source Voltage ± 30 V

Operating Junction and -55 to + 150
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )

D

°C

Thermal Resistance

Symbol Parameter Typ. Max. Units

R

θJL

R

θJA

Junction-to-Drain Lead ––– 20
Junction-to-Ambient  ––– 50 °C/W

Notes  through  are on page 8

www.irf.com 1

4/2/02

IRF3000

Static @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

I

DSS

I

GSS

Dynamic @ TJ = 25°C (unless otherwise specified)

g

fs

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

C

oss

C

oss

C

eff. Effective Output Capacitance ––– 87 ––– VGS = 0V, VDS = 0V to 240V 

oss

Drain-to-Source Breakdown Voltage 300 ––– ––– VVGS = 0V, ID = 250µA

/∆T

Breakdown Voltage Temp. Coefficient

J

––– 0.38 ––– V/°C Reference to 25°C, ID = 1mA 
Static Drain-to-Source On-Resistance ––– 0.34 0.40 Ω VGS = 10V, ID = 0.96A 
Gate Threshold Voltage 3.0 ––– 5.0 V VDS = VGS, ID = 250µA

Drain-to-Source Leakage Current

––– ––– 25
––– ––– 250 VDS = 240V, VGS = 0V, TJ = 150°C

Gate-to-Source Forward Leakage ––– ––– 100 V
Gate-to-Source Reverse Leakage ––– ––– -100

VDS = 300V, VGS = 0V

µA

= 30V

GS

nA

V

= -30V

GS

Parameter Min. Typ. Max. Units Conditions
Forward Transconductance 2.0 ––– ––– SVDS = 50V, ID = 0.96A
Total Gate Charge ––– 22 33 ID = 0.96A
Gate-to-Source Charge ––– 4.7 7.1 nC VDS = 240V
Gate-to-Drain ("Miller") Charge ––– 11 17 VGS = 10V,
Turn-On Delay Time ––– 8.2 ––– VDD = 150V
Rise Time ––– 7.2 ––– ID = 0.96A
Turn-Off Delay Time ––– 23 ––– RG = 2.2Ω

ns

Fall Time ––– 23 ––– VGS = 10V 
Input Capacitance ––– 730 ––– VGS = 0V
Output Capacitance ––– 100 ––– VDS = 25V
Reverse Transfer Capacitance ––– 20 ––– pF ƒ = 1.0MHz
Output Capacitance ––– 940 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Output Capacitance ––– 39 ––– VGS = 0V, VDS = 240V, ƒ = 1.0MHz

Avalanche Characteristics

Parameter Typ. Max. Units

E

AS

I

AR

Single Pulse Avalanche Energy ––– 47 mJ
Avalanche Current ––– 1.9 A

Diode Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode) 

––– –––

––– –––

1.6

13

showing the

A

p-n junction diode.

G

Diode Forward Voltage ––– ––– 1.5 V TJ = 25°C, IS = 0.96A, VGS = 0V 
Reverse Recovery Time ––– 86 130 ns TJ = 25°C, IF = 0.96A
Reverse RecoveryCharge ––– 250 380 nC di/dt = 100A/µs



2 www.irf.com

D

S

IRF3000

100

)
A

(

t

10

n

e

r

r

u
C
e

c

r

1

u

o
S

-

o

t

-

n

i

a

r

0.1

D

,

D

I

VGS
TOP 15V
12V
10V

8.0V

7.0V

6.5V

6.0V
BOTTOM 5.5V

5.5V

20µs PULSE WIDTH

0.01

0.1 1 10 100

Tj = 25°C

VDS, Drain-to-Sour ce Voltage (V)

100.0

)
A

(

t

n

e

r

10.0

r

u
C
e

c

r

u

o
S

-

o

t

-

1.0

n

i

a

r
D

,

D

I

0.1

TJ = 150°C

TJ = 25°C

V

= 50V

DS

20µs PULSE WIDTH

5.0 6.0 7.0 8.0

VGS, Gate-t o-Source Voltage (V)

100

)
A

(

t

n

e

r

r

10

u
C
e

c

r

u

o
S

-

o

t

-

1

n

i

a

r
D

,

D

I

VGS
TOP 15V
12V
10V

8.0V

7.0V

6.5V

6.0V
BOTTOM 5.5V

5.5V

20µs PULSE WIDTH

0.1

0.1 1 10 100

Tj = 150°C

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

2.5

2.0

1.5

(Normalized)

1.0

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

1.6A

I =

D

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature ( C)

J

V =

GS

°

10V

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs. Temperature

www.irf.com 3

IRF3000

100000

10000

)
F

p

(
e

1000

c

n

a

t

i

c

a

p

100

a
C

,
C

10

1

1 10 100 1000

V

= 0V, f = 1 MHZ

GS

C

iss

SHORTED
C

= C

rss

C

= C

oss

VDS, Drain-to-Sour ce Voltage (V)

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

100.0

)
A

(

t

n

e

r

10.0

r

u
C
n

i

a

r
D
e

s

r

e

v

e
R

,

D
S

I

TJ = 150°C

1.0

TJ = 25°C

0.1

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VSD, Source-toDrain V oltage (V)

= C

gd
ds

Ciss

Coss
Crss

+ Cgd, C

gs

+ C

gd

V

GS

= 0V

ds

20

ID= 0.96A

)
V

(

16

e

g

a

t

l

o
V

12

e

c

r

u

o
S

-

o

8

t

-

e

t

a
G

,

S

4

G

V

0

0 5 10 15 20 25 30

Q

G

VDS= 240V
VDS= 150V

VDS= 60V

FOR TEST CIRCUIT
SEE FIGURE 14

Total G ate Charge (nC)

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

100

)
A

(

t

n

e

r

r

10

u
C
e

c

r

u

o
S

-

o

t

-

n

1

i

a

r
D
,

D

I

Tc = 25°C
Tj = 150°C
Single Pulse

0.1
1 10 100 1000 10000

OPERATION IN THIS AREA
LIMITED BY RDS(on)

V

, Drain-toSource V oltage (V)

DS

100µsec

1msec

10msec

Fig 7. Typical Source-Drain Diode

Fig 8. Maximum Safe Operating Area

Forward Voltage

4 www.irf.com

IRF3000

2.0

1.6

1.2

0.8

D

I , Drain Current (A)

0.4

0.0
25 50 75 100 125 150

T , Case Temperature ( C)

C

°

Fig 9. Maximum Drain Current Vs.

Ambient Temperature

100

R

V

DS

V

GS

R

G

D

D.U.T.

10V

Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

V

DS

90%

10%
V

GS

t

d(on)tr

t

d(off)tf

Fig 10b. Switching Time Waveforms

+

V

DD

-

D = 0.50

0.20

10

thJA

Thermal Response (Z )

0.10

0.05

0.02

1

0.01
P

DM

SINGLE PULSE

0.1

0.01

0.00001 0.0001 0.001 0.01 0.1 1 10 100

(THERMAL RESPONSE)

t , Rectangular Pulse Duration (sec)

1

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

1 2

J DM thJA A

t

1

t

2

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

www.irf.com 5

IRF3000

)

0.50

Ω

(
e

c

n

a

t

s

i

0.46

s

e
R
n
O
e

c

r

0.42

u

o
S

-

o

t

-

n

i

a

r

0.38

D

,

)

n

o

(
S

D

0.34

R

V

GS

= 10V

02468101214

ID , Drain Current ( A)

Fig 12. On-Resistance Vs. Drain Current

Current Regulator

Same Type as D.U.T.

.2µF

12V

V

GS

50KΩ

.3µF

D.U.T.

3mA

I

G

Current Sampling Resistors

V

GS

+

V

DS

-

I

D

V

G

QGSQ

Q

G

GD

Charge

)

0.80

Ω

(
e

c

n

a

t

0.70

s

i

s

e
R
n
O

0.60

e

c

r

u

o
S

-

0.50

o

t

-

n

i

a

r
D

0.40

,

)

n

o

(
S
D

0.30

R

ID = 0.96A

6 8 10 12 14 16

V

Gate -to - Source Voltage (V)

GS,

Fig 13. On-Resistance Vs. Gate Voltage

100

TOP

80

BOTTOM

I

D

0.9A

1.5A

1.9A

Fig 14a&b. Basic Gate Charge Test Circuit

60

and Waveform

40

15V

V

(BR)DSS

t

p

I

AS

V

R

G

20V

L

DS

D.U.T

I

AS

Ω

0.01

t

p

Fig 15a&b. Unclamped Inductive Test circuit

and Waveforms

DRIVER

+

V

DD

-

A

20

AS

E , Single Pulse Avalanche Energy (mJ)

0

25 50 75 100 125 150

Starting T , Junction Temperature ( C)

J

Fig 15c. Maximum Avalanche Energy

Vs. Drain Current

6 www.irf.com

°

SO-8 Package Details

E

X

A

M

P

L

E

:

T

H

I

S

I

S

A

N

I

R

F

7

1

0

1

(

M

O

S

F

E

T

)

I

N

T

E

R

N

A

T

I

O

N

A

L

R

E

C

T

I

F

I

E

R

L

O

G

O

F

7

1

0

1

Y

W

W

X

X

X

X

P

A

R

T

N

U

M

B

E

R

L

O

T

C

O

D

E

W

W

=

W

E

E

K

Y

=

L

A

S

T

D

I

G

I

T

O

F

T

H

E

Y

E

A

R

D

A

T

E

C

O

D

E

(

Y

W

W

)

D B

A

87

6

E

e

6X

5

65

4312

e1

H

0.25 [.010] A

A

C

IRF3000

.0688
.0098
.020

.1968
.1574

.2440
.0196
.050

8°

MILL I MET ER SINCHES

MIN M AX

1.35

1.75

0.10

0.25

0.33

0.51

4.80

5.00

3.80

4.00

1.27 BASIC

5.80

6.20

0.25

0.50

0.40

1.27
8°

0°

DIM

MIN M AX

A

.0532

A1

.0040

b

.013

c .0075 .0098 0.19 0.25

D

.189

E

.1497

e

.050 BASIC

e1

.025 BASIC 0.635 BA SIC

H

.2284

K

.0099

L

.016

y

0°

K x 45°

y

8X b

0.25 [.010]

NOTES:

1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.

2. CONTROLLING DIMENSION: MILLIMETER

3. DIMENSIONS ARE SHOWN IN M ILLIMETERS [INCHES].

4. OU TL INE CONFOR MS T O JEDEC OU TL INE MS-012AA.
5 DIM ENSION DOES NOT INCLUDE MOLD PROTRUSIONS.

MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
6 DIM ENSION DOES NOT INCLUDE MOLD PROTRUSIONS.

MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
7 DIMENSION I S THE LENGTH OF LEAD FOR SOLDERING TO

A SUBSTRATE.

A1

CAB

SO-8 Part Marking

0.10 [.004]
8X L

7

6.46 [.255]

3X 1.27 [.050]

8X c

FOOT PRINT

8X 0.72 [.02 8]

8X 1.78 [.070]

www.irf.com 7

IRF3000

N

SO-8 Tape and Reel

TERMI NA L NU MBER 1

12.3 ( .484 )

11.7 ( .461 )

8.1 ( .318 )

7.9 ( .312 )

OTES:

1. CONTROLLING DIMENSION : MILLIMETER.

2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).

3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

NOTES :

1. CONTROLLING DIMENSION : MILLIMETER.

2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature.

 Starting T

RG = 25Ω, I

= 25°C, L = 26mH

J

= 1.9A.

AS

 Pulse width ≤ 300µs; duty cycle ≤ 2%.

330.00
(12.992)
MAX.

FEED DIRECTION

14.40 ( .566 )

12.40 ( .488 )

 When mounted on 1 inch square copper board

C

eff. is a fixed capacitance that gives the same charging time



oss

as C

 I

TJ ≤ 150°C

while V

oss

≤ 0.96A, di/dt ≤ 170A/µs, V

SD

is rising from 0 to 80% V

DS

DD

≤ V

(BR)DSS

DSS

,

Data and specifications subject to change without notice.

This product has been designed and qualified for the Industrial market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: [phone]

TAC Fax: [phone]

Visit us at www.irf.com for sales contact information.4/02

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