Datasheet IRF2907ZS-7PPbF Datasheet (IOR)

S

D

G

查询IRF2907ZS-7PPBF供应商

Features

l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax

PD - 97031

IRF2907ZS-7PPbF

HEXFET® Power MOSFET

V

= 75V

DSS

R

DS(on)

= 3.8mΩ



Description

Specifically designed for high current, high reliabil­ity applications, this HEXFET® Power MOSFET
utilizes the latest processing techniques and ad­vanced packaging technology to achieve extremely
low on-resistance and world -class current ratings.
Additional features of this design are a 175°C
junction operating temperature, fast switching speed
and improved repetitive avalanche rating . These
features combine to make this design an extremely
efficient and reliable device for use in Server &
Telecom OR'ing, Automotive and low voltage Motor
Drive Applications.

Absolute Maximum Ratings

Parameter Units

ID @ TC = 25°C

I

@ TC = 100°C

D

I

@ TC = 25°C

D

I

DM

PD @TC = 25°C

V

GS

E

AS

E

(tested)

AS

I

AR

E

AR

T

J

T

STG

Continuous Drain Current, V

Continuous Drain Current, V

Continuous Drain Current, V

Pulsed Drain Current

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy (Thermally Limited)

Single Pulse Avalanche Energy Tested Value

Avalanche Current

Repetitive Avalanche Energy

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw

c

c

@ 10V (Silicon Limited)

GS

@ 10V (See Fig. 9)

GS

@ 10V

GS

g

Thermal Resistance

Parameter Typ. Max. Units

R

θJC

R

θCS

R

θJA

R

θJA

Junct ion-to-Case

Case-to-Sink, Flat, Greased Surface

Junct ion-to-Ambient

Junct ion-to-Ambient (PCB Mount, steady state)

j

j

S (Pin 2, 3, 5, 6, 7)
G (Pin 1)

(Package Limited)

d

h

ij

ID = 160A

Max.

180

120

160

700

300

2.0

± 20

160

410

See Fig.12a,12b,15,16

-55 to + 175

300 (1.6mm from case )

10 lbf•in (1.1N•m)

––– 0.50 °C/W

0.50 –––

––– 62

––– 40

A

W

W/°C

V

mJ

A

mJ

°C

HEXFET® is a registered trademark of International Rectifier.

www.irf.com 1

08/03/05

IRF2907ZS-7PPbF

/

g

µ

g

µ

Static @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units

V

(BR)DSS

∆Β

R

DS(on)

V

GS(th)

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

D

L

S

C

iss

C

oss

C

rss

C

oss

C

oss

C

oss

V

DSS

SMD

eff.

Drain-to-Source Breakdown Voltage75––––––V

∆

T

Breakdown Voltage Temp. Coefficient ––– 0.066 ––– V/°C

J

Static Drain-to-Source On-Resistance –––

3.0 3.8

Gate Threshold Voltage 2.0 ––– 4.0 V

Forward Transconductance

94 ––– ––– S

Drain-to-Source Leakage Current ––– ––– 20

––– ––– 250
Gate-to-Source Forward Leakage ––– ––– 200 nA
Gate-to-Source Reverse Leaka

e ––– ––– -200
Total Gate Charge ––– 170 260 nC
Gate-to-Source Charge ––– 55 –––
Gate-to-Drain ("Miller") Charge ––– 66 –––
Turn-On Delay Time ––– 21 ––– ns
Rise Time ––– 90 –––
Turn-Off Delay Time ––– 92 –––
Fall Time ––– 44 –––
Internal Drain Inductance ––– 4.5 ––– nH Between lead,

Internal Source Inductance ––– 7.5 ––– from package

Input Capacitance ––– 7580 ––– pF
Output Capacitance ––– 970 –––
Reverse Transfer Capacitance ––– 540 –––
Output Capacitance ––– 3750 –––
Output Capacitance ––– 650 –––
Effective Output Capacitance ––– 1110 –––

Conditions

VGS = 0V, ID = 250µA
Reference to 25°C, I
V

= 10V, ID = 110A

GS

mΩ

V

= VGS, ID = 250µA

DS

= 25V, ID = 110A

V

DS

V

A

= 75V, VGS = 0V

DS

V

= 75V, VGS = 0V, TJ = 125°C

DS

V

= 20V

GS

V

= -20V

GS

I

= 110A

D

V

= 60V

DS

e

= 10V

V

GS

= 38V

V

DD

= 110A

I

D

R

= 2.6Ω

G

V

GS

6mm (0.25in.)

and center of die contact
V

GS

V

DS

ƒ = 1.0MHz, See Fig. 5
V

GS

V

GS

VGS = 0V, VDS = 0V to 60V

d

= 10V

= 0V

= 25V

= 0V, VDS = 1.0V, ƒ = 1.0MHz
= 0V, VDS = 60V, ƒ = 1.0MHz

= 1mA

D

e

D

G

S

Diode Characteristics

Parameter Min. Typ. Max. Units

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

Continuous Source Current ––– ––– 160

(Body Diode) A
Pulsed Source Current ––– ––– 700

(Body Diode)

c

Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge ––– 40 60 nC

 Repetitive rating; pulse width limited by

max. junction temperature. (See fig. 11).

 Limited by T

L=0.026mH, RG = 25Ω, I

, starting TJ = 25°C,

Jmax

AS

= 110A, VGS =10V.

Part not recommended for use above this value.

 Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
 C

eff. is a fixed capacitance that gives the same

oss

charging time as C
V

.

DSS

oss

while V

is rising from 0 to 80%

DS

MOSFET symbol

showing the
integral reverse

p-n junction diode.
––– ––– 1.3 V
–––3553ns

TJ = 25°C, IS = 110A, VGS = 0V

TJ = 25°C, IF = 110A, VDD = 38V

di/dt = 100A/

 Limited by T

, see Fig.12a, 12b, 15, 16 for typical repetitive

Jmax

avalanche performance.

 This value determined from sample failure population. 100%

tested to this value in production.

 This is applied to D

( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.

 R

is measured at TJ of approximately 90°C.

θ

2

Pak, when mounted on 1" square PCB

Conditions

e

s

G

2 www.irf.com

D

S

e

IRF2907ZS-7PPbF

1000

TOP 15V

)
A

(
t
n
e

r

100

r
u

C
e

c

r
u
o
S

­o

t

-

10

n

i
a

r
D

,

D

I

4.5V

≤

BOTTOM 4.5V

60µs PULSE WIDTH

Tj = 25°C

1

0.1 1 10 100 1000

VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

VGS

10V

8.0V

7.0V

6.0V

5.5V

5.0V

1000

TOP 15V

)
A

(
t
n
e

r

r
u

C
e

c

r
u
o
S

­o

t

­n

i
a

r
D

,
I

100

4.5V

D

≤

BOTTOM 4.5V

60µs PULSE WIDTH

Tj = 175°C

10

0.1 1 10 100 1000

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

VGS

10V

8.0V

7.0V

6.0V

5.5V

5.0V

1000

)

Α

(

t

100

n
e

r

r
u

C
e

c

r

10

u
o
S

­o

t

­n

i
a

r
D

,

D

I

TJ = 175°C

1

TJ = 25°C

V

= 25V

DS

≤

60µs PULSE WIDTH

0.1
1 2 3 4 5 6 7 8

VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

200

)
S

(
e

c

150

n
a

t
c
u
d
n
o
c
s

100

n
a

r
T

d

r
a

w

r
o

50

F
,

s

f

G

TJ = 25°C

TJ = 175°C

V

= 10V

DS

380µs PULSE WIDTH

0

0 25 50 75 100 125 150

ID,Drain-to-Source Current (A)

Fig 4. Typical Forward Transconductance

vs. Drain Current

www.irf.com 3

IRF2907ZS-7PPbF

100000

)
F

10000

p

(
e
c
n
a

t

i
c
a
p
a

C
,

1000

C

100

V

= 0V, f = 1 MHZ

GS

C

= C

iss

rss

oss

= C

= C

gs

gd

ds

C

iss

C

oss

C

rss

C

C

1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance vs.

Drain-to-Source Voltage

+ Cgd, C

+ C

gd

SHORTED

ds

12.0
ID= 110A

)

10.0

V

(
e

g
a

t

l

8.0

o
V

e
c

r
u

6.0

o
S

­o

t

­e

t

4.0

a
G

,

S
G

2.0

V

0.0
0 50 100 150 200

VDS= 60V

VDS= 38V

VDS= 15V

Q

Total Gate Charge (nC)

G

Fig 6. Typical Gate Charge vs.

Gate-to-Source Voltage

1000

)
A

(
t

100

n
e

r

r
u

C
n

i
a

r

10

D
e

s

r
e
v
e

R
,

1

D
S

I

0.1

TJ = 175°C

TJ = 25°C

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

VSD, Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode

V

GS

= 0V

10000

OPERATION IN THIS AREA

)
A

1000

(
t
n
e

r

r
u

C

100

e
c

r
u
o
S

-

10

o

t

­n

i
a

r
D
,

1

D

I

Tc = 25°C
Tj = 175°C
Single Pulse

0.1
0 1 10 100 1000

LIMITED BY RDS(on)

DC

VDS, Drain-to-Source Voltage (V)

Fig 8. Maximum Safe Operating Area

100µsec

1msec

10msec

Forward Voltage

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IRF2907ZS-7PPbF

τ

200

Limited By Package

160

)
A

(
t
n

120

e

r

r
u

C
n

i
a

r

80

D
,

D

I

40

0

25 50 75 100 125 150 175

TC , Case Temperature (°C)

Fig 9. Maximum Drain Current vs.

Case Temperature

3.0

e
c
n
a

t
s

i
s
e

R
n
O
e

c

r
u
o
S

­o

t

­n

i
a

r
D

,

)
n
o

(
S
D

R

)
d
e
z

i

l
a

m

r
o

N

(

2.5

2.0

1.5

1.0

ID = 180A

V

= 10V

GS

0.5

-60 -40 -20 0 20 40 60 80 100120140160180

TJ , Junction Temperature (°C)

Fig 10. Normalized On-Resistance

vs. Temperature

1

D = 0.50

)

C
J
h

t

Z
(

e
s
n
o
p
s
e

R
l
a

m

r
e

0.001

h
T

0.1

0.01

0.20

0.10

0.05

0.02

0.01

SINGLE PULSE
( THERMAL RESPONSE )

τ

J

τ

J

τ

1

τ

1

Ci= τi/Ri

R

R

1

R

1

τ

R

2

3

R

2

2

τ

2

Ri (°C/W) τi (sec)

R

3

τ

C

0.1072 0.000896

τ

3

0.2787 0.009380

τ

3

0.1143 0.121118

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

0.0001

1E-006 1E-005 0.0001 0.001 0.01 0.1

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRF2907ZS-7PPbF

A

15V

DRIVER

+

-

V

DD

R

V

20V

V

DS

G

GS

L

D.U.T

I

AS

Ω

0.01

t

p

Fig 12a. Unclamped Inductive Test Circuit

V

(BR)DSS

t

p

I

AS

Fig 12b. Unclamped Inductive Waveforms

Q

G

10 V

Q

GS

Q

GD

700

)
J

m

(

600

y
g

r
e
n
E

500

e
h
c
n

400

a

l
a
v
A

e

300

s

l
u
P

e

l

200

g
n

i
S
,

100

S
A

E

TOP 24A

BOTTOM 110A

0

25 50 75 100 125 150 175

Starting TJ , Junction Temperature (°C)

Fig 12c. Maximum Avalanche Energy

vs. Drain Current

I

D

34A

V

G

4.5

)
V

Charge

Fig 13a. Basic Gate Charge Waveform

Current Regulator

Same Type as D.U.T.

50KΩ

.2µF

12V

V

GS

.3µF

D.U.T.

3mA

I

G

Current Sampling Resistors

+

V

DS

-

I

D

Fig 13b. Gate Charge Test Circuit

4.0

(
e

g
a

t

l

3.5

o
V

d

l
o

3.0

h
s
e

r
h

t

2.5

e

t
a

G

)

2.0

h

t

(
S
G

1.5

V

ID = 250µA

ID = 1.0mA

ID = 1.0A

1.0

-75 -50 -25 0 25 50 75 100 125 150 175 200

TJ , Temperature ( °C )

Fig 14. Threshold Voltage vs. Temperature

6 www.irf.com

1000

IRF2907ZS-7PPbF

Duty Cycle = Single Pulse

)
A

(

100

t
n
e

r

r
u

C
e

h
c
n
a

l

10

a
v

A

1

1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01

0.01

0.05

0.10

Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming ∆ Tj = 25°C due to
avalanche losses

tav (sec)

Fig 15. Typical Avalanche Current vs.Pulsewidth

Notes on Repetitive Avalanche Curves , Figures 15, 16:

200

TOP Single Pulse
BOTTOM 1% Duty Cycle

)
J

m

150

(
y

g

r
e
n
E

e
h

100

c
n
a

l
a
v
A
,

R

50

A

E

0

25 50 75 100 125 150 175

ID = 110A

Starting TJ , Junction Temperature (°C)

Fig 16. Maximum Avalanche Energy

(For further info, see AN-1005 at www.irf.com)

1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a

temperature far in excess of T

. This is validated for

jmax

every part type.

2. Safe operation in Avalanche is allowed as long asT

jmax

not exceeded.

3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.

4. P

= Average power dissipation per single

D (ave)

avalanche pulse.

5. BV = Rated breakdown voltage (1.3 factor accounts for

voltage increase during avalanche).

6. I

= Allowable avalanche current.

av

7. ∆T = Allowable rise in junction temperature, not to exceed

T

(assumed as 25°C in Figure 15, 16).

jmax

t

Average time in avalanche.

av =

D = Duty cycle in avalanche = t
Z

(D, tav) = Transient thermal resistance, see figure 11)

thJC

P

= 1/2 ( 1.3·BV·Iav) = DT/ Z

D (ave)

I

2DT/ [1.3·BV·Zth]

av =

E

= P

AS (AR)

·f

av

D (ave)·tav

thJC

vs. Temperature

www.irf.com 7

is

IRF2907ZS-7PPbF





Reverse
Recovery
Current

Driver Gate Drive

P.W.

D.U.T. ISDWaveform

D.U.T. VDSWaveform

Inductor Curent

* V

GS

D.U.T

+

-

R

G

+



Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

-

• Low Leakage Inductance
Current Transformer



-

• dv/dt controlled by R

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

G

+

V

DD

Re-Applied
Voltage

+

-

Period

Body Diode Forward

Current

di/dt

Diode Recovery

dv/dt

Body Diode Forward Drop

Ripple ≤ 5%

= 5V for Logic Level Devices

D =

P. W .

Period

VGS=10V

V

DD

I

SD

*

Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET® Power MOSFETs

R

D.U.T.

D

+

V

DD

-

V

DS

V

GS

R

G

10V

Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

Fig 18a. Switching Time Test Circuit

V

DS

90%

10%
V

GS

t

d(on)tr

t

d(off)tf

Fig 18b. Switching Time Waveforms

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D2Pak - 7 Pin Package Outline

Dimensions are shown in millimeters (inches)

IRF2907ZS-7PPbF

D2Pak - 7 Pin Part Marking Information

14

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IRF2907ZS-7PPbF

D2Pak - 7 Pin Tape and Reel

Data and specifications subject to change without notice.

This product has been designed and qualified for the Automotive [Q101] market.

Qualification Standards can be found on IRs Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: [phone]

TAC Fax: [phone]

Visit us at www.irf.com for sales contact information. 08/05

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