Datasheet IRF2903Z Datasheet (International Rrectifier)

查询IRF2903Z供应商

PD - 96988A

AUTOMOTIVE MOSFET

IRF2903ZS

IRF2903ZL

IRF2903Z

Features

l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax

G

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Absolute Maximum Ratings

Parameter Units

ID @ TC = 25°C

ID @ TC = 100°C

@ TC = 25°C

I

D

I

DM

PD @TC = 25°C

V

GS

E

AS (Thermally limited)

(Tested )

E

AS

I

AR

E

AR

T

J

T

STG

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Single Pulse Avalanche Energy Tested Value

Avalanche Current

Repetitive Avalanche Energy

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw

c

c

@ 10V (Silicon Limited)

GS

@ 10V (Silicon Limited)

GS

@ 10V (Package Limited)

GS

d

g

i

D

TO-220AB

IRF2903Z

GDS

Gate Drain Source

h

Thermal Resistance

Parameter Typ. Max.

R

θJC

R

θCS

R

θJA

R

θJA

Junction-to-Case

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

Junction-to-Ambient (PCB Mount, steady state)

k

i

ik

jk

www.irf.com 1

HEXFET® Power MOSFET

D

S

D

S

D

G

D2Pak

IRF2903ZS

See Fig.12a, 12b, 15, 16

-55 to + 175

300 (1.6mm from case )

10 lbf

––– 0.51

0.50 –––

––– 62

––– 40

V

R

DS(on)

S

D

G

Max.

260

180

75

1020

290

2.0

± 20

290

820

y

in (1.1Nym)

= 30V

DSS

= 2.4mΩ

I

= 75A

D

IRF2903ZL

G

TO-262

A

W

W/°C

V

mJ

A

mJ

°C

Units

°C/W

S

D

8/26/05

IRF2903Z/S/L

(BR)

)

g

)

S

r

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units

V

DSS

∆V

DSS

R

DS(on

V

GS(th

gfs Forward Transconductance 120 ––– ––– S I

DSS

I

GSS

Q Q

s

Q

d

t

d(on

t

r

t

d(off

t

f

L

D

L

S

C

iss

C

oss

C

rss

C

oss

C

oss

eff.

C

oss

Source-Drain Ratings and Characteristics

I

M

V

D

t

r

Q

r

t

on

Drain-to-Source Breakdown Voltage 30 ––– ––– V

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.021 ––– V/°C

J

Static Drain-to-Source On-Resistance ––– 1.9 2.4

mΩ

Gate Threshold Voltage 2.0 ––– 4.0 V

Drain-to-Source Leakage Current ––– ––– 20 µA

––– ––– 250 Gate-to-Source Forward Leakage ––– ––– 200 nA Gate-to-Source Reverse Leakage ––– ––– -200 Total Gate Charge ––– 160 240 Gate-to-Source Charge ––– 51 ––– nC Gate-to-Drain ("Miller") Charge ––– 58 ––– Turn-On Delay Time ––– 24 ––– Rise Time ––– 100 ––– Turn-Off Delay Time ––– 48 ––– ns Fall Time ––– 37 ––– Internal Drain Inductance ––– 4.5 ––– Between lead,

nH 6mm (0.25in.)

Internal Source Inductance ––– 7.5 ––– from package

Input Capacitance ––– 6320 ––– Output Capacitance ––– 1980 ––– Reverse Transfer Capacitance ––– 1100 ––– pF Output Capacitance ––– 5930 ––– Output Capacitance ––– 2010 ––– Effective Output Capacitance ––– 3050 –––

Parameter Min. Typ. Max. Units

Continuous Source Current ––– ––– 75 (Body Diode) A Pulsed Source Current ––– ––– 1020 (Body Diode) Diode Forward Voltage ––– ––– 1.3 V Reverse Recovery Time ––– 34 51 ns Reverse Recovery Charge ––– 29 44 nC Forward Turn-On Time

c

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Conditions

VGS = 0V, ID = 250µA Reference to 25°C, I

= 10V, ID = 75A

V

GS

= 1mA

D

e

VDS = VGS, ID = 150µA VDS = 10V, ID = 75A V

= 30V, VGS = 0V

DS

= 30V, VGS = 0V, TJ = 125°C

V

DS

V

= 20V

GS

= -20V

V

GS

I

= 75A

D

= 24V

V

DS

VGS = 10V

e

VDD = 15V

= 75A

I

D

= 3.2 Ω

R

G

VGS = 10V

e

and center of die contact VGS = 0V

= 25V

V

DS

ƒ = 1.0MHz

= 0V, VDS = 1.0V, ƒ = 1.0MHz

V

GS

= 0V, VDS = 24V, ƒ = 1.0MHz

V

GS

= 0V, VDS = 0V to 24V

V

GS

f

Conditions

MOSFET symbol showing the integral reverse p-n junction diode.

= 25°C, IS = 75A, VGS = 0V

T

J

TJ = 25°C, IF = 75A, VDD = 15V di/dt = 100A/µs

e

2 www.irf.com

IRF2903Z/S/L

1000

) A

( t n e

r

100

u C e

c

r u o S

o

t

n

10

i a

r D

,

D

I

4.5V

TOP 15V

BOTTOM 4.5V

≤

60µs PULSE WIDTH

Tj = 25°C

1

0.1 1 10 100 1000

VDS, Drain-to-Source Voltage (V)

1000.0

)

Α

(

t n e

r

r u

C e

c

r u o S

o

t

n

i a

r D

,

D

I

100.0

TJ = 175°C

10.0

1.0

0.1

2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0

TJ = 25°C

V

= 25V

DS

≤

60µs PULSE WIDTH

VGS, Gate-to-Source Voltage (V)

VGS

10V

8.0V

7.0V

6.0V

5.5V

5.0V

1000

) A

( t n e

r

r u

C e

c

r u

100

o S

o

t

n

i a

r D

,

D

I

4.5V

TOP 15V

BOTTOM 4.5V

≤

60µs PULSE WIDTH

Tj = 175°C

10

0.1 1 10 100 1000

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

240

) S

(

200

e c n a

t c

160

u d n o c s n

120

a

r T

d

r a

80

w

r o F , s

f

40

G

V

DS

380µs PULSE WIDTH

0

0 20 40 60 80 100 120 140 160 180

ID, Drain-to-Source Current (A)

TJ = 175°C

= 10V

VGS

10V

8.0V

7.0V

6.0V

5.5V

5.0V

TJ = 25°C

Fig 3. Typical Transfer Characteristics

Fig 4. Typical Forward Transconductance

Vs. Drain Current

www.irf.com 3

IRF2903Z/S/L

) F p

( e

c n a

t

i c a p a

C ,

C

12000

10000

8000

6000

4000

2000

0

1 10 100

V

= 0V, f = 1 MHZ

GS

C

= C

iss

rss

oss

= C

gs

gd

ds

C

Ciss

Coss

Crss

+ Cgd, C

+ C

VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

1000.0

) A

( t

100.0

n e

r

r u

C n

i a

r D e

s

r e v e

R ,

D S

I

TJ = 175°C

10.0

TJ = 25°C

1.0

0.1

0.0 0.4 0.8 1.2 1.6 2.0 2.4

VSD, Source-to-Drain Voltage (V)

20

SHORTED

ds

gd

) V

( e

g a

t

l o V

e c

r u o S

o

t

e

t a

G ,

V

ID= 75A

16

12

8

S

4

G

VDS= 24V

VDS= 15V

0

0 40 80 120 160 200 240

Q

Total Gate Charge (nC)

G

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

V

GS

= 0V

10000

) A

(

1000

t n e

r

r u

C

100

e c

r u o S

o

t

n

i a

r D

,

D

I

LIMITED BY PACKAGE

10

1

Tc = 25°C Tj = 175°C Single Pulse

0.1

0.1 1.0 10.0 100.0

OPERATION IN THIS AREA LIMITED BY RDS(on)

1msec

V

, Drain-toSource Voltage (V)

DS

100µsec

10msec

DC

Fig 7. Typical Source-Drain Diode

Fig 8. Maximum Safe Operating Area

Forward Voltage

4 www.irf.com

IRF2903Z/S/L

τ

300

LIMITED BY PACKAGE

250

) A

( t

200

n e

r

r u

C

150

n

i a

r D

,

100

D

I

50

0

25 50 75 100 125 150 175

TC , Case Temperature (°C)

Fig 9. Maximum Drain Current Vs.

Case Temperature

1

2.0

e c n a

t s

i s e

R n O e

c

r u o S

o

t

n

i a

r D

,

) n o

( S D

R

ID = 75A

V

= 10V

GS

1.5

) d e z

i

l a

m

r o

N

(

1.0

0.5

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

TJ , Junction Temperature (°C)

Fig 10. Normalized On-Resistance

Vs. Temperature

)

C J h

t Z (

e s n o p s e

R l a

m

r e h T

0.001

D = 0.50

0.1

0.01

1E-006 1E-005 0.0001 0.001 0.01 0.1

0.20

0.10

0.05

0.02

0.01

SINGLE PULSE ( THERMAL RESPONSE )

τ

J

τ

J

τ

1

τ

1

Ci= τi/Ri

R

1

R

1

τ

R

2

3

R

2

τ

2

Ri (°C/W) τi (sec)

R

3

τ

C

τ

0.08133 0.000044

3

0.2408 0.000971

τ

3

0.18658 0.008723

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

www.irf.com 5

IRF2903Z/S/L

A

15V

L

D.U.T

I

AS

0.01

t

p

Ω

R

V

20V

V

DS

G

GS

Fig 12a. Unclamped Inductive Test Circuit

V

(BR)DSS

t

p

I

AS

Fig 12b. Unclamped Inductive Waveforms

Q

G

DRIVER

+

-

V

DD

1200

) J

m

( y

1000

g

r e n E

e

800

h c n a

l a v

600

A e

s

l u P

400

e

l g n

i S

200

, S A

E

0

25 50 75 100 125 150 175

I

TOP

42A

BOTTOM

Starting TJ, Junction Temperature (°C)

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

D

26A

75A

10 V

Q

GS

V

G

Fig 13a. Basic Gate Charge Waveform

Current Regulator

Same Type as D.U.T.

.2µF

12V

V

GS

Fig 13b. Gate Charge Test Circuit

Q

GD

Charge

50KΩ

.3µF

D.U.T.

3mA

I

G

Current Sampling Resistors

4.5

ID = 1.0A

) V

4.0

( e

g a

t

l

3.5

o V

d

l o

3.0

h s e

r h

t

2.5

e

t a

G

)

2.0

h

t

( S G

1.5

+

V

DS

-

V

1.0

-75 -50 -25 0 25 50 75 100 125 150 175

ID = 1.0mA

ID = 250µA ID = 150µA

TJ , Temperature ( °C )

I

D

Fig 14. Threshold Voltage Vs. Temperature

6 www.irf.com

1000

IRF2903Z/S/L

Duty Cycle = Single Pulse

) A

(

100

t n e

r

r u

C e

h c n a

l a

10

v A

1

1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01

0.01

0.05

0.10

Allowed avalanche Current vs avalanche pulsewidth, tav assuming ∆Tj = 25°C due to avalanche losses. Note: In no case should Tj be allowed to exceed Tjmax

tav (sec)

Fig 15. Typical Avalanche Current Vs.Pulsewidth

300

TOP Single Pulse

250

) J

m

( y

g

200

r e n E

e h

150

c n a

l a v A

100

,

R A

E

50

0

25 50 75 100 125 150 175

BOTTOM 1% Duty Cycle ID = 75A

Starting TJ , Junction Temperature (°C)

Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com)

1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a

temperature far in excess of T

. This is validated for

jmax

every part type.

2. Safe operation in Avalanche is allowed as long asT not exceeded.

3. Equation below based on circuit and waveforms shown in Figures 12a, 12b.

4. P

= Average power dissipation per single

D (ave)

avalanche pulse.

5. BV = Rated breakdown voltage (1.3 factor accounts for

voltage increase during avalanche).

6. I

= Allowable avalanche current.

av

7. ∆T = Allowable rise in junction temperature, not to exceed

T

(assumed as 25°C in Figure 15, 16).

jmax

t

Average time in avalanche.

av =

D = Duty cycle in avalanche = t Z

(D, tav) = Transient thermal resistance, see figure 11)

thJC

·f

av

jmax

is

P

= 1/2 ( 1.3·BV·Iav) = DT/ Z

Fig 16. Maximum Avalanche Energy

Vs. Temperature

D (ave)

I

2DT/ [1.3·BV·Zth]

av =

E

= P

AS (AR)

D (ave)·tav

thJC

www.irf.com 7

IRF2903Z/S/L





Reverse Recovery Current

Driver Gate Drive

D.U.T. ISDWaveform

D.U.T. VDSWaveform

Inductor Curent

* V

GS

D.U.T

+

-

R

G

+



Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

-

• Low Leakage Inductance Current Transformer



-

• dv/dt controlled by R

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

G

+

V

DD

Re-Applied Voltage

+

-

Period

P.W.

Body Diode Forward

Current

di/dt

Diode Recovery

dv/dt

Body Diode Forward Drop

Ripple ≤ 5%

= 5V for Logic Level Devices

D =

P. W .

Period

VGS=10V

V

DD

I

SD

*

Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET® Power MOSFETs

R

D.U.T.

D

+

V

DD

-

V

DS

V

GS

R

G

10V

Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %

Fig 18a. Switching Time Test Circuit

V

DS

90%

10% V

GS

t

d(on)tr

t

d(off)tf

Fig 18b. Switching Time Waveforms

8 www.irf.com

TO-220AB Package Outline

IRF2903Z/S/L

TO-220AB Part Marking Information

EXAMPLE: THIS IS AN IRF1010

LOT CODE 1789 AS S E MBLED ON WW 19, 2000 IN THE ASSEMBLY LINE "C"

Note: "P" in as s embly line position

i ndi cates " L ead - F r ee"

TO-220AB package is not recommended for Surface Mount Application.

INTERNATIONAL

RECTIF IER

LOGO

ASSEMBLY LOT CODE

www.irf.com 9

PART NUMBER

DATE CODE YEAR 0 = 2000 WEEK 19 LINE C

IRF2903Z/S/L

2

D

Pak Package Outline (Dimensions are shown in millimeters (inches))

D2Pak Part Marking Information

T HIS IS AN IRF 530S WIT H LOT CODE 8024

ASS EMBLE D ON WW 02, 2000 IN THE ASSEMBLY LINE "L"

Note: "P" in ass embly line posi tion indicates "Lead-F ree"

INTE RNATIONAL

RECTIF IER

LOGO

ASSEMBLY LOT CODE

F530S

OR

INTE RNATIONAL

RECTIFIER

LOGO

ASSEMBLY LOT CODE

10 www.irf.com

F530S

PART NUMBER

DATE CODE YEAR 0 = 2000 WEEK 02 LINE L

PART NUMBER

DATE CODE

P = D ES I GN AT ES L E AD- F RE E

PRODUCT (OPTIONAL )

YEAR 0 = 2000 WEEK 02

A = ASSEMBLY SITE CODE

IRF2903Z/S/L

TO-262 Package Outline (Dimensions are shown in millimeters (inches))

IGBT

1- GATE

2- COLLECTOR

3- EMITTER

4- COLLECTOR

TO-262 Part Marking Information

TH IS I S AN IRL 3103L

EXAMPLE:

LOT CODE 1789 ASS EMBL ED ON WW 19, 1997 IN THE ASSEMBLY LINE "C"

Note: "P" in assembly line pos i tio n in dicates "L ead-F r ee"

INTERNATIONAL

RECTIFIE R

LOGO

AS S E MB L Y LOT CODE

PART NUMBER

DATE CODE YEAR 7 = 1997 WE EK 19 LINE C

OR

INTERNATIONAL

RECTIFIE R

LOGO

AS S E MB L Y LOT CODE

www.irf.com 11

PART NUMBER

DATE CODE P = DE S IGN ATE S L EAD -F RE E

PRODUCT (OPTIONAL)

YEAR 7 = 1997 WEEK 19

A = AS S E MB LY SI T E COD E

IRF2903Z/S/L

D2Pak Tape & Reel Information

TRR

1.60 (.063)

1.50 (.059)

4.10 (.161)

3.90 (.153)

FEED DIRECTION

TRL

FEED DIRECTION

1.85 (.073)

1.65 (.065)

10.90 (.429)

10.70 (.421)

11.60 (.457)

11.40 (.449)

16.10 (.634)

15.90 (.626)

1.60 (.063)

1.50 (.059)

1.75 (.069)

1.25 (.049)

15.42 (.609)

15.22 (.601)

0.368 (.0145)

0.342 (.0135)

24.30 (.957)

23.90 (.941)

4.72 (.136)

4.52 (.178)

13.50 (.532)

12.80 (.504)

330.00 (14.173) MAX.

NOTES :

1. COMFOR MS TO EIA-418.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION MEASURED @ HUB.

4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. (See fig. 11).

 Limited by T

RG = 25Ω, I

, starting TJ = 25°C, L = 0.10mH

Jmax

= 75A, VGS =10V. Part not

AS

recommended for use above this value.

 Pulse width ≤ 1.0ms; duty cycle ≤ 2%.  C

eff. is a fixed capacitance that gives the

oss

same charging time as C from 0 to 80% V

DSS

.

oss

while V

DS

is rising

This product has been designed and qualified for the Automotive [Q101]market.

27.40 (1.079)

23.90 (.941)

4

60.00 (2.362) MIN.

30.40 (1.197) MAX.

4

3

, see Fig.12a, 12b, 15, 16 for typical repetitive

 Limited by T

26.40 (1.039)

24.40 (.961)

Jmax

avalanche performance.

 This value determined from sample failure population. 100%

tested to this value in production.

 This is only applied to TO-220AB pakcage.  This is applied to D

4 or G-10 Material). For recommended footprint and soldering

techniques refer to application note #AN-994.

 R

is measured at TJ approximately 90°C

θ

2

Pak, when mounted on 1" square PCB (FR-

Data and specifications subject to change without notice.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information. 08/05

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Datasheet IRF2903Z Datasheet (International Rrectifier)

Specifications and Main Features

Frequently Asked Questions

User Manual