Datasheet IRF2805PbF Datasheet (International Rrectifier)

S

D

G

查询IRF2805PBF供应商

PD - 95493

AUTOMOTIVE MOSFET

Typical Applications

l Climate Control, ABS, Electronic Braking,

Windshield Wipers

l Lead-Free

Features

l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax

IRF2805PbF

HEXFET® Power MOSFET

V

= 55V

DSS

R

DS(on)

I

D

= 4.7mΩ

= 75A

Description

Specifically designed for Automotive applications, this HEXFET
MOSFET utilizes the latest processing techniques to achieve extremely
low on-resistance per silicon area. Additional features of this design are
a 175°C junction operating temperature, fast switching speed and im­proved repetitive avalanche rating . These features combine to make this
design an extremely efficient and reliable device for use in Automotive
applications and a wide variety of other applications.

®

Power

TO-220AB

Absolute Maximum Ratings

Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon limited) 175
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (See Fig.9) 120 A
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package limited) 75
I

DM

PD @TC = 25°C Power Dissipation 330 W

V

GS

E

AS

E

(6 sigma) Single Pulse Avalanche Energy Tested Value 1220

AS

I

AR

E

AR

T

J

T

STG

Pulsed Drain Current  700

Linear Derating Factor 2.2 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 450 mJ

Avalanche Current See Fig.12a, 12b, 15, 16 A
Repetitive Avalanche Energy mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting Torque, 6-32 or M3 screw 1.1 (10) N•m (lbf•in)

°C

Thermal Resistance

Parameter Typ. Max. Units

R

θJC

R

θCS

R

θJA

Junction-to-Case ––– 0.45
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
Junction-to-Ambient ––– 62

HEXFET(R) is a registered trademark of International Rectifier.

www.irf.com 1

07/01/04

IRF2805PbF

S

D

S

D

G

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

D

L

S

C

iss

C

oss

C

rss

C

oss

C

oss

C

eff. Effective Output Capacitance  ––– 1600 ––– VGS = 0V, VDS = 0V to 44V

oss

Source-Drain Ratings and Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. (See fig. 11).

 Starting T

RG = 25Ω, I

 I

SD

TJ ≤ 175°C

 Pulse width ≤ 400µs; duty cycle ≤ 2%.

Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.06 ––– V/°C Reference to 25°C, ID = 1mA

J

Static Drain-to-Source On-Resistance ––– 3.9 4.7 mΩ VGS = 10V, ID = 104A 
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = 10V, ID = 250µA
Forward Transconductance 91 ––– ––– S VDS = 25V, ID = 104A

Drain-to-Source Leakage Current

––– ––– 20

––– ––– 250 VDS = 55V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 200 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -200

VDS = 55V, VGS = 0V

µA

nA

VGS = -20V
Total Gate Charge –– – 150 230 ID = 104A
Gate-to-Source Charge ––– 38 57 nC VDS = 44V
Gate-to-Drain ("Miller") Charge ––– 52 78 VGS = 10V
Turn-On Delay Time ––– 14 ––– VDD = 28V
Rise Time ––– 120 ––– ID = 104A
Turn-Off Delay Time ––– 68 ––– RG = 2.5Ω

ns

Fall Time ––– 110 ––– VGS = 10V 

4.5

Internal Drain Inductance

Internal Source Inductance ––– –––

––– –––

7.5

Between lead,

6mm (0.25in.)

nH

from package

and center of die contact
Input Capacitance ––– 5110 ––– VGS = 0V
Output Capacitance ––– 1190 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 210 ––– ƒ = 1.0MHz, See Fig. 5
Output Capacitance ––– 6470 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Output Capacitance ––– 860 ––– VGS = 0V, VDS = 44V, ƒ = 1.0MHz

Parameter Min. Typ. Max. Units Conditions
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode) 

––– –––

––– –––

175

700

showing the

A

p-n junction diode.
Diode Forward Voltage –– – ––– 1.3 V TJ = 25°C, IS = 104A, VGS = 0V 
Reverse Recovery Time ––– 80 120 ns TJ = 25°C, IF = 104A
Reverse Recovery Charge ––– 290 430 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

 C

eff. is a fixed capacitance that gives the same charging time

oss

= 25°C, L = 0.08mH

J

= 104A. (See Figure 12).

AS

≤ 104A, di/dt ≤ 240A/µs, V

DD

≤ V

(BR)DSS

as C
 Limited by T
avalanche performance.
 This value determined from sample failure population. 100%

,

tested to this value in production.

oss

while V

is rising from 0 to 80% V

DS

, see Fig.12a, 12b, 15, 16 for typical repetitive

Jmax

DSS

G



.

2 www.irf.com

IRF2805PbF

0

1000

)
A

(

t

n

e

r

r

100

u
C
e

c

r

u

o
S

-

o

t

-

10

n

i

a

r
D

,

D

I

VGS
TOP 15V
10V

8.0V

7.0V

6.0V

5.5V

5.0V
BOTTOM 4.5V

4.5V

20µs PULSE WIDTH

1

0.1 1 10 100

Tj = 25°C

VDS, Drain-to-Source Voltage (V )

1000

TJ = 25°C

)
A

(

t

n

e

r

r

u
C
e

c

r

100

u

o
S

-

o

t

-

n

i

a

r
D

,

D

I

10

4.0 5.0 6.0 7.0 8.0 9.0 10. 0

V

= 25V

DS

20µs PULSE WIDTH

VGS, Gat e-to-Source Voltage (V)

TJ = 175°C

)
A

(

t

n

e

r

r

u
C
e

c

r

u

o
S

-

o

t

-

n

i

a

r
D

,
I

1000

100

D

VGS
TOP 15V
10V

8.0V

7.0V

6.0V

5.5V

5.0V
BOTTOM 4.5V

4.5V

20µs PULSE WIDTH

10

0.1 1 10 100

Tj = 175°C

VDS, Drain-to-Source Voltage (V )

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

200

)
S

(

160

e

c

n

a

t

c

u

d

120

n

o

c

s

n

a

r
T

80

d

r

a
w

r

o
F

40

,

s

f
G

TJ = 175°C

TJ = 25°C

V

= 25V

DS

20µs PULSE WIDTH

0

0 40 80 120 160 20

ID, Drain-to-Source Current (A)

Fig 3. Typical Transfer Characteristics

Fig 4. Typical Forward Transconductance

Vs. Drain Current

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IRF2805PbF

)
F

p

(
e

c

n

a

t

i

c

a

p

a
C

,
C

10000

8000

6000

4000

2000

0

1 10 100

V

= 0V, f = 1 MHZ

GS

C

= C

iss

SHORTED
C

= C

rss

C

= C

oss

VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

1000.0

)
A

(

t

100.0

n

e

r

r

u
C
n

i

a

r

10.0

D
e

s

r

e

v

e
R

,

1.0

D
S

I

0.1

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1. 8

TJ = 175°C

TJ = 25°C

VSD, Source-toDrain Vol tage (V)

gd

ds

+ Cgd, C

gs

+ C

gd

Ciss

Coss
Crss

20

ds

ID= 104A

)
V

(

16

e

g

a

t

l

o
V

12

e

c

r

u

o
S

-

o

8

t

-

e

t

a
G

,

S

4

G

V

VDS= 44V
VDS= 28V

0

0 40 80 120 160 200 240

Q

Total Gate Charge (nC)

G

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

10000

)
A

(

t

1000

n

e

r

r

u
C
e

c

r

100

u

o
S

-

o

t

-

n

i

a

r

10

D
,

D

I

V

= 0V

GS

Tc = 25°C
Tj = 175°C
Single Puls e

1

1 10 100 1000

OPERATION IN THIS AREA
LIMITED BY RDS(on)

V

, Drain-toSource Vol tage (V)

DS

100µsec

1msec

10msec

Fig 7. Typical Source-Drain Diode

Fig 8. Maximum Safe Operating Area

Forward Voltage

4 www.irf.com

IRF2805PbF

180

LIMITED BY PACKAGE

150

120

90

60

D

I , Drain Cur rent (A)

30

0

25 50 75 100 125 150 175

T , Case Temperature ( C)

C

°

Fig 9. Maximum Drain Current Vs.

Case Temperature

1

3.0

175A

I =

D

2.5

2.0

1.5

(Normalized)

1.0

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

T , Junction Temperature ( C)

J

Fig 10. Normalized On-Resistance

Vs. Temperature

V =

GS

°

10V

D = 0.50

thJC

0.20

0.1

0.10

0.05

0.02

0.01

0.01

Thermal Response (Z )

0.001

0.00001 0.0001 0.001 0.01 0.1

SINGLE PULSE

(THERMAL RESPONSE)

t , Rectangular Pulse Duration (sec)

1

P

DM

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

1 2

J DM thJC C

t

1

t

2

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

www.irf.com 5

IRF2805PbF

V

S

Current Regulator

I

A

15V

DRIVER

+

V

DD

-

R

20V

V

V

DS

G

GS

L

D.U.T

I

AS

Ω

0.01

t

p

Fig 12a. Unclamped Inductive Test Circuit

V

(BR)DSS

t

p

AS

Fig 12b. Unclamped Inductive Waveforms

Q

G

10 V

Q

GS

Q

GD

1000

TOP

800

600

400

200

AS

E , Single Pulse Avalanche Energy (mJ)

0

25 50 75 100 125 150 175

Starting Tj, Junction Temperature ( C)

BOTTOM

°

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

4.0

I

D
43A
87A

104A

)
V

(

G

Charge

Fig 13a. Basic Gate Charge Waveform

Same Type as D.U.T.

50KΩ

.2µF

12V

V

GS

.3µF

D.U.T.

3mA

I

Current Sampling Resistors

I

G

+

V

D

-

D

Fig 13b. Gate Charge Test Circuit

e

g

a

t

l

o

3.0

V
d

l

o

h

s

e

r

h

t
e

t

a

2.0

G

)

h

t

(
S
G

V

1.0

-75 -50 -25 0 25 50 75 100 125 150 175

ID = 250µA

TJ , Temperat ure ( °C )

Fig 14. Threshold Voltage Vs. Temperature

6 www.irf.com

IRF2805PbF

10000

Duty Cycle = Single Pulse

1000

)
A

(

t

n

e

r

r

u
C

100

e

h

c

n

a

l

a

v
A

10

1

1.0E-07 1.0E-06 1.0E-05 1. 0E-04 1.0E-03 1.0E-02 1.0E-01

0.01

0.05

0.10

tav (sec)

Fig 15. Typical Avalanche Current Vs.Pulsewidth

Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming ∆Tj = 25°C due to
aval anche losses. Note: In no
case should Tj be allowed to
exceed Tjmax

500

TOP Single Pulse
BOTTOM 10% Duty Cycle

)

400

J
m

(
y

g

r

e

n

300

E
e

h

c

n

a

l

200

a

v
A

,

R
A

100

E

ID = 104A

Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)

1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a

temperature far in excess of T
every part type.

2. Safe operation in Avalanche is allowed as long asT
not exceeded.

. This is validated for

jmax

jmax

3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.

4. P

avalanche pulse.

= Average power dissipation per single

D (ave)

5. BV = Rated breakdown voltage (1.3 factor accounts for

voltage increase during avalanche).

6. I

= Allowable avalanche current.

av

7. ∆T = Allowable rise in junction temperature, not to exceed

T

(assumed as 25°C in Figure 15, 16).

0

25 50 75 100 125 150 175

Starting TJ , Junction Temperature (°C)

Fig 16. Maximum Avalanche Energy

Vs. Temperature

jmax

t

Average time in avalanche.

av =

D = Duty cycle in avalanche = t
Z

(D, tav) = Transient thermal resistance, see figure 11)

thJC

P

= 1/2 ( 1.3·BV·Iav) = DT/ Z

D (ave)

I

2DT/ [1.3·BV·Zth]

av =

E

= P

AS (AR)

·f

av

D (ave)·tav

thJC

www.irf.com 7

is

IRF2805PbF

R
V

+

-

V
9

1
V

+

-





Reverse
Recovery
Current

Driver Gate Drive

P.W.

D.U.T. ISDWaveform

D.U.T. VDSWaveform

Inductor Curent

* V

GS

D.U.T

+

-

R

G

+



Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

-

• Low Leakage Inductance
Current Transformer



-

• dv/dt controlled by R

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

G

+

V

DD

e-Applied

oltage

Period

Body Diode Forward

Current

di/dt

Diode Recovery

dv/dt

Body Diode Forward Drop

Ripple ≤ 5%

= 5V for Logic Level Devices

D =

P.W.

Period

VGS=10V

V

DD

I

SD

*

Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET® Power MOSFETs

R

D.U.T.

D

V

DD

V

DS

V

GS

R

G

10V

Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

Fig 18a. Switching Time Test Circuit

DS

0%

0%

GS

t

d(on)tr

t

d(off)tf

Fig 18b. Switching Time Waveforms

8 www.irf.com

K

TO-220AB Package Outline

R

Dimensions are shown in millimeters (inches)

IRF2805PbF

10.54 (.415)

2.87 (.113)

2.62 (.103)

15.24 (.600)

14.84 (.584)

14.09 (.555)

13.47 (.530)

1.40 (.055)

3X

1.15 (.045)

2.54 (.100)

NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
2 CONTROLLING DI M E NSION : INCH 4 HEATSINK & LEAD MEAS UREMENTS DO NOT INCLUDE BURRS.

10.29 (.405)

4

1 2 3

2X

3.78 (.149)

3.54 (.139)

- A -

6.47 (.255)

6.10 (.240)

1.15 (.045)
MIN

4.06 (.160)

3.55 (.140)

0.93 (.037)

3X

0.69 (.027)

0.36 (.014) M B A M

4.69 (.185)

4.20 (.165)

- B -

1.32 (.052)

1.22 (.048)

2.92 (.115)

2.64 (.104)

HEXFET
1- GATE

2- DRAIN
3- SOURCE
4- DRAIN

3X

LEAD ASSIGNMENTS

LEAD ASSIGNM ENTS
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN

0.55 (.022)

0.46 (.018)

TO-220AB Part Marking Information

EXAMPLE:

THIS IS AN IRF1010
LOT CODE 1789
ASS EMBLED ON WW 19, 1997
IN TH E ASSEMBLY LINE "C"

Note: "P" in assembly line
position indicates "Lead-Free"

INTERNATIONAL

RE CTIFIER

LOGO

AS S EMBLY
LOT CODE

IGBTs, CoPAC
1- GATE

2- COLLECTOR
3- EMITT E R
4- COLLECTOR

PART NUMBE

DATE CODE
YEAR 7 = 1997
WEEK 19
LINE C

Data and specifications subject to change without notice.

This product has been designed and qualified for the Automotive [Q101] market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: [phone]

TAC Fax: [phone]

Visit us at www.irf.com for sales contact information.07/04

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