Datasheet IRF247, IRF246, IRF244 Datasheet (Intersil)

January 1998

Semiconductor

IRF244, IRF245,

IRF246, IRF247

14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm,

N-Channel Power MOSFETs

Features

• 14A and 13A, 275V and 250V

•r

DS(ON)

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• 275V, 250V DC Rated - 120V AC Line System
Operation

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 0.28Ω and 0.34Ω

Components to PC Boards”

Ordering Information

PART NUMBER PACKAGE BRAND

IRF244 TO-204AA IRF244
IRF245 TO-204AA IRF245
IRF246 TO-204AA IRF246

Description

These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching conver­tors, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. These types can be operated directly from
integrated circuits.

Formerly developmental type TA17423.

Symbol

D

G

S

IRF247 TO-204AA IRF247

NOTE: When ordering, include the entire part number.

Packaging

DRAIN
(FLANGE)

GATE (PIN 1)

JEDEC TO-204AA

SOURCE (PIN 2)

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright

© Harris Corporation 1997

5-1

File Number 2209.2

IRF244, IRF245, IRF246, IRF247

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

IRF244 IRF245 IRF246 IRF247 UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . V

DS

DGR

250 250 275 275 V
250 250 275 275 V

Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . ID 14 13 14 13 A

TC = 100oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Maximum Power Dissipation. . . . . . . . . . . . . . . . . . . . . . . . . . P

D

DM

GS

D

8.8 8.0 8.8 8.0 A
56 52 56 52 A

±20 ±20 ±20 ±20 V
125 125 125 125 W

Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0 1.0 1.0 1.0 W/oC

Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . E

Operating and Storage Temperature . . . . . . . . . . . . . TJ, T

AS

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from case for 10s. . . . . . . . . . . . T

Package Body for 10s, see TB334 . . . . . . . . . . . . . . . . . .T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

550 550 550 550 mJ

-55 to 150 -55 to 150 -55 to 150 -55 to 150

300
260

300
260

300
260

300
260

o

C

o

C

o

C

NOTE:

1. TJ = 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV

DSSVGS

IRF244, IRF245 250 - - V

= 0V, ID = 250µA

(Figure 10)

IRF246, IRF247 275 - - V
Gate to Threshold Voltage V
Zero-Gate Voltage Drain Current I

GS(TH)VGS

DSS

= VDS, ID = 250µA 2.0 - 4.0 V
VDS = Rated BV
VDS = 0.8 x Rated BV

, VGS = 0V - - 25 µA

DSS

, VGS = 0V,

DSS

- - 250 µA

TJ = 125oC

On-State Drain Current (Note 2) I

D(ON)VDS

> I

D(ON) xrDS(ON)MAX

, VGS = 10V

IRF244, IRF246 14 - - A

IRF245, IRF247 13 - - A
Gate to Source Leakage Current I
Drain to Source On-State Resistance (Note 2) r

GSSVGS

DS(ON)VGS

= ±20V - - ±100 nA
= 10V, ID = 8A, (Figures 8, 9)

IRF244, IRF246 - 0.20 0.28 Ω

IRF245, IRF247 - 0.24 0.34 Ω
Forward Transconductance (Note 2) g
Turn-On Delay Time t

d(ON)VDD

VDS≥ 50V, ID = 8A, (Figure 12) 6.7 10 - S

fs

= 125V, ID≈ 14A, RG = 9.1Ω, RL = 8.9Ω

-1624ns

(Figures 17, 18) MOSFET Switching Times

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Total Gate Charge

Q

g(TOT)VGS

(Gate to Source + Gate to Drain)

are Essentially Independent of Operating

r

Temperature

f

= 10V, ID = 14A, VDS = 0.8 x Rated

BV

DSS

, I

g(REF)

= 1.5mA,

- 67 100 ns

-5380ns

-4974ns

-3959nC

(Figures 14, 19, 20) Gate Charge is

Gate to Source Charge Q
Gate to Drain “Miller” Charge Q

Essentially Independent of Operating

gs

Temperature

gd

- 6.6 - nC

-20- nC

5-2

IRF244, IRF245, IRF246, IRF247

Electrical Specifications T

= 25oC, Unless Otherwise Specified (Continued)

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Input Capacitance C
Output Capacitance C
Reverse-Transfer Capacitance C
Internal Drain Inductance L

Internal Source Inductance L

Junction to Case R
Junction to Ambient R

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Continuous Source to Drain Current I
Pulse Source to Drain Current

(Note 3)

I

SD
SM

VGS = 0V, VDS = 25V, f = 1.0MHz

ISS

- 1300 - pF

(Figure 11)

OSS

RSS

Measured Between

D

the Contact Screw on
the Flange that is
Closer to Source and
Gate Pins and the
Center of Die

Measured From The

S

Source Lead, 6mm
(0.25in) From the
Flange and the
Source Bonding Pad

θJC

Free Air Operation - - 30oC/W

θJA

Modified MOSFET
Symbol Showing the

Modified MOSFET
Symbol Showing the
Internal Devices
Inductances

D

L

D

G

L

S

S

D

Integral Reverse

- 320 - pF

-69- pF

- 5.0 - nH

- 12.5 - nH

- - 1.0oC/W

- - 14 A

- - 56 A

P-N Junction Diode

G

S

Source to Drain Diode Voltage (Note 2) V
Reverse Recovery Time t
Reverse Recovered Charge Q
Forward Turn-On Time t

ON

TJ = 25oC, ISD= 14A, VGS = 0V (Figure 13) - - 1.8 V

SD

TJ = 25oC, ISD = 14A, dISD/dt = 100A/µs 150 300 640 ns

rr

TJ = 25oC, ISD = 14A, dISD/dt = 100A/µs 1.6 3.4 7.2 µC

RR

Intrinsic Turn-On Time is Negligible, Turn-On
Speed is Substantially Controlled by LS + L

----

D

NOTES:

2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).

4. VDD = 50V, starting TJ = 25oC, L = 4.5mH, RG = 25Ω, peak IAS = 14A. See Figures 15, 16.

5-3

IRF244, IRF245, IRF246, IRF247

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 50 100 150

TC, CASE TEMPERATURE (oC)

Unless Otherwise Specified

FIGURE 1. NORMALIZED POWER DISSIP ATION vs CASE

TEMPERA TURE

10

1

0.1

0.01

-5

10

0.5

0.2

0.1

0.05

0.02

0.01
SINGLE PULSE

-4

10

-3

10

, RECTANGULAR PULSE DURATION (s)

t

1

C/W)

o

, TRANSIENT THERMAL

IMPEDANCE (

θJC

Z

0.001

15

12

9

6

DRAIN CURRENT (A)

D,

I

3

0

IRF245, IRF247

50 75 10025 150

TC,CASE TEMPERATURE (oC)

IRF244, IRF246

125

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

P

DM

t

1

t

t

2

2

NOTES:
DUTY FACTOR: D = t1/t
PEAK TJ= PDM x Z

-2

10

0.1 1 10

θJC

2

+ T

C

FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE

1000

IRF244, 246

100

IRF245, 247
IRF244, 246

10

IRF245, 247

, DRAIN CURRENT (A)

1

D

I

= 25oC

T

C

TJ = MAX RATED
SINGLE PULSE

0.1
110

VDS, DRAIN TO SOURCE VOLTAGE (V)

OPERATION IN THIS
REGION IS LIMITED
BY r

DS(ON)

IRF244,
IRF245

100

10µs

100µs

1ms

10ms

DC

IRF246,
IRF247

1000

25

VGS =10V

20

15

10

, DRAIN CURRENT (A)

D

I

5

0

25 50 75 1000 125

V

DS,

80µs PULSE TEST

VGS =6.0V

VGS =5.5V

VGS = 5.0V

VGS =4.5V
VGS =4.0V

DRAIN TO SOURCE VOLTAGE (V)

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS

5-4

IRF244, IRF245, IRF246, IRF247

Typical Performance Curves

25

80µs PULSE TEST

20

15

10

, DRAIN CURRENT (A)

D

I

5

0

2468010
V

DRAIN TO SOURCE VOLTAGE (V)

DS,

FIGURE 6. SATURATION CHARACTERISTICS FIGURE 7. TRANSFER CHARACTERISTICS

2.5

80µs PULSE TEST

2.0

1.5

VGS = 5.0V

Unless Otherwise Specified (Continued)

10V

6.0V

5.5V

4.5V

4.0V

VGS = 10V

100

10

1

, DRAIN CURRENT (A)

D

I

0.1
0 246810

3.0

2.4

1.8

≥ 50V

V

DS

80µs PULSE TEST

TJ = 150oC

VGS, GATE TO SOURCE VOLTAGE (V)

ID = 14A

VGS = 10V

TJ = 25oC

1.0

, DRAIN TO SOURCE

ON RESISTANCE (Ω)

0.5

DS(ON)

r

0

075

15 30

ID,DRAIN CURRENT (A)

45

VGS = 20V

60

FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs

GATE VOLTAGE AND DRAIN CURRENT

1.25
ID = 250µA

1.15

1.05

0.95

BREAKDOWN VOLTAGE

0.85

NORMALIZED DRAIN TO SOURCE

0.75

-20 20 100 160

0-40 40 80 120 140

, JUNCTION TEMPERATURE (oC)

T

J

60-60

1.2

0.6

ON RESISTANCE VOLTAGE

NORMALIZED DRAIN TO SOURCE

0

-20-40 20 40 100 140

0 60 120 160

, JUNCTION TEMPERATURE (oC)

T

J

FIGURE 9. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

3000

2400

1800

1200

F, CAPACITANCE (C)

P

600

0

0 10 100

V

DS,

C

C

C

DRAIN TO SOURCE VOLTAGE (V)

ISS

OSS

RSS

80-60

VGS = 0V, f = 1MHz

= CGS + C

C

ISS

C

= C

RSS
OSS

GD

≈ CDS + C

C

GD

GD

FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN

VOLTAGE vs JUNCTION TEMPERATURE

FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

5-5

IRF244, IRF245, IRF246, IRF247

Typical Performance Curves

15

12

, TRANSCONDUCTANCE (S)

fs

g

≥ 50V

V

DS

80µs PULSE TEST

9

6

3

0

5101520025

ID,DRAIN CURRENT (A)

Unless Otherwise Specified (Continued)

TJ = 25oC

TJ = 150oC

, SOURCE TO DRAIN CURRENT (A)

SD

I

2

10

10

TJ = 150oC

1

0.1
0 0.4 0.8 1.2 1.6 2.0

VSD, SOURCE TO DRAIN VOLTAGE (V)

TJ = 25oC

FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE

20

IC = 14A

16

VDS = 50V

12

8

VDS = 125V

VDS = 200V

4

GATE TO SOURCE VOLTAGE (V)

GS,

V

0

12 24 36 48060

Q

TOTAL GATE CHARGE (nC)

g(TOT),

FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE

5-6

IRF244, IRF245, IRF246, IRF247

Test Circuits and Waveforms

V

DS

BV

DSS

L

VARY t

TO OBTAIN

P

REQUIRED PEAK I

V

GS

AS

R

G

+

V

DD

-

DUT

0V

P

I

AS

0.01Ω

0

t

FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS

t

P

I

AS

t

AV

V

DS

V

DD

t

ON

t

d(ON)

t

R

L

+

V

R

G

DD

-

V

DS

0

r

90%

10%

DUT

V

GS

V

GS

10%

0

50%

PULSE WIDTH

FIGURE 17. SWITCHING TIME TEST CIRCUIT FIGURE 18. RESISTIVE SWITCHING WAVEFORMS

V

DS

D

S

CURRENT

I

D

SAMPLING

(ISOLATED
SUPPLY)

SAME TYPE
AS DUT

DUT

V

DS

V

DD

Q

g(TOT)

Q

gd

Q

gs

V

DS

0

I

G(REF)

0

12V

BATTERY

0

0.2µF

I

g(REF)

CURRENT

REGULATOR

50kΩ

0.3µF

G

IG CURRENT

SAMPLING

RESISTOR RESISTOR

t

d(OFF)

90%

V

GS

t

OFF

50%

t

f

10%

90%

FIGURE 19. GATE CHARGE TEST CIRCUIT FIGURE 20. GATE CHARGE WAVEFORMS

5-7