Datasheet IRF237, IRF234, IRF236, IRF235 Datasheet (Intersil)

January 1998

Semiconductor

IRF234, IRF235,

IRF236, IRF237

8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm,
N-Channel Power MOSFETs

Features

• 8.1A and 6.5A, 275V and 250V

•r

DS(ON)

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• 275V, 250V DC Rated - 120V AC Line System
Operation

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 0.45Ω and 0.68Ω

Components to PC Boards”

Ordering Information

PART NUMBER PACKAGE BRAND

IRF234 TO-204AA IRF234
IRF235 TO-204AA IRF235
IRF236 TO-204AA IRF236

Description

These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching conver­tors, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. These types can be operated directly from
integrated circuits.

Formerly developmental type TA17413.

Symbol

D

G

S

IRF237 TO-204AA IRF237

NOTE: When ordering, include the entire part number.

Packaging

DRAIN
(FLANGE)

GATE (PIN 1)

JEDEC TO-204AA

SOURCE (PIN 2)

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright

© Harris Corporation 1997

5-1

File Number 2208.3

IRF234, IRF235, IRF236, IRF237

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

IRF234 IRF235 IRF236 IRF237 UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage (R

= 20kΩ) (Note 1) . . . . . . . . . V

GS

Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

T

= 100oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

C

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Maximum Power Dissipation. . . . . . . . . . . . . . . . . . . . . . . . . . P

DS

DGR

D
D

DM

GS

D

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 0.6 0.6 0.6 W/

Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . E

Operating and Storage Temperature . . . . . . . . . . . . . T

AS

, T

J

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . .T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

250 250 275 275 V
250 250 275 275 V

8.1 6.5 8.1 6.5 A

5.1 4.1 5.1 4.1 A
32 26 32 26 A

±20 ±20 ±20 ±20 V

75 75 75 75 W

180 180 180 180 mJ

-55 to 150 -55 to 150 -55 to 150 -55 to 150

300
260

300
260

300
260

300
260

o

C

o

C

o

C

o

C

NOTE:

1. TJ= 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV

DSSVGS

= 0V, ID = 250µA, (Figure 10)

IRF234, IRF235 250 - - V

IRF236, IRF237 275 - - V
Gate to Threshold Voltage V
Zero-Gate Voltage Drain Current I

On-State Drain Current (Note 2) I

GS(TH)VGS

DSSVDS

D(ON)VDS

IRF234, IRF236 8.1 - - A

= VDS, ID = 250µA 2.0 - 4.0 V
= Rated BV

VDS = 0.8 x Rated BV

> I

D(ON) xrDS(ON)MAX

, VGS = 0V - - 25 µA

DSS

, VGS = 0V TJ =125oC - - 250 µA

DSS

, VGS = 10V,

(Figure 7)

IRF235, IRF237 6.5 - - A
Gate to Source Leakage I
Drain to Source On-State Resistance (Note 2) r

GSSVGS

DS(ON)VGS

= ±20V - - ±100 nA
= 10V, ID = 4.1A, (Figures 8, 9)

IRF234, IRF236 - 0.32 0.45 Ω

IRF235, IRF237 - 0.48 0.68 Ω
Forward Transconductance (Note 2) g
Turn-On Delay Time t

d(ON)VDD

VDS≥ 50V, ID = 4.1A, (Figure 12) 2.9 4.3 - S

fs

= 125V, ID≈ 8.1A, RG = 12Ω, RL = 1.1Ω

- 9.1 14 ns

VGS = 10V, (Figures 17, 18)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Total Gate Charge

Q

g(TOT)VGS

(Gate to Source + Gate to Drain)

MOSFET Switching Times are Essentially

r

Independent of Operating Temperature

f

= 10V, ID = 8.1A, VDS = 0.8 x Rated BV

I

= 1.5mA, (Figures 14, 19, 20)

G(REF)

DSS

-2335ns

-3147ns

-1929ns

-2435nC

Gate Charge is Essentially Independent of

Gate to Source Charge Q
Gate to Drain “Miller” Charge Q

Operating Temperature

gs

gd

- 5.1 - nC

-12-nC

5-2

IRF234, IRF235, IRF236, IRF237

Electrical Specifications T

= 25oC, Unless Otherwise Specified (Continued)

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Internal Drain Inductance L

Internal Source Inductance L

Therma Resistance Junction to Case R
Therma Resistance Junction to Ambient R

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

ISSVGS

OSS

RSS

D

S

= 0V, VDS = 25V, f = 1.0MHz, (Figure 11) - 600 - pF

- 180 - pF

-52-pF

Measured Between the
Contact Screw on the
Flange that is Closer to
Source and Gate Pins
and the Center of Die

Measured From The

Modified MOSFET
Symbol Showing the
Internal Devices
Inductances

D

L

D

- 5.0 - nH

- 12.5 - nH
Source Lead, 6mm
(0.25in) From the Flange
and the Source Bonding
Pad

θJC

Free Air Operation - - 30oC/W

θJA

G

L

S

S

- - 1.67oC/W

Continuous Source to Drain Current I
Pulse Source to Drain Current

(Note 3)

Source to Drain Diode Voltage (Note 2) V
Reverse Recovery Time t
Reverse Recovered Charge Q

I

SDM

Modified MOSFET

S

Symbol Showing the
Integral Reverse

D

- - 8.1 A

- - 32 A

P-N Junction Diode

G

S

TJ = 25oC, ISD= 8.1A, VGS = 0V, (Figure 13) - - 2.0 V

SD

TJ = 25oC, ISD = 8.1A, dISD/dt = 100A/µs 92 180 390 ns

rr

TJ = 25oC, ISD = 8.1A, dISD/dt = 100A/µs 0.63 1.3 2.7 µC

RR

NOTES:

2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).

4. VDD = 50V, starting TJ = 25oC, L = 4.5mH, RG = 25Ω, peak IAS = 8.1A. See Figures 15, 16.

5-3

IRF234, IRF235, IRF236, IRF237

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 50 100 150

TC, CASE TEMPERATURE (oC)

Unless Otherwise Specified

FIGURE 1. NORMALIZED POWER DISSIP ATION vs CASE

TEMPERA TURE

10

10

8

IRF234, IRF236

6

4

DRAIN CURRENT (A)

D,

I

2

0

IRF235, IRF237

50 75 10025 150

TC,CASE TEMPERATURE (oC)

125

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

1

C/W)

o

, TRANSIENT THERMAL

IMPEDANCE (

θJC

Z

100

10

1

, DRAIN CURRENT (A)

D

I

0.1

0.5

0.2

0.1

0.05

0.1

0.02

0.01
SINGLE PULSE

0.01

-5

10

IRF234, 236
IRF235, 237

IRF234, 236
IRF235, 237

OPERATION IN THIS
REGION IS LIMITED
BY r

DS(ON)

= 25oC

T

C

TJ = MAX RATED
SINGLE PULSE

110

VDS, DRAIN TO SOURCE VOLTAGE (V)

-4

10

-3

10

t

, RECTANGULAR PULSE DURATION (s)

1

-2

10

0.1 1 10

FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE

IRF234,

IRF235

100

10µs

100µs

1ms

10ms

DC

IRF236,
IRF237

1000

15

12

9

6

, DRAIN CURRENT (A)

D

I

3

0

VGS = 10V

VGS = 8V

VGS = 4V

25 50 75 1000 125

V

DRAIN TO SOURCE VOLTAGE (V)

DS,

P

DM

t

1

t

t

2

2

NOTES:
DUTY FACTOR: D = t1/t
PEAK TJ= PDM x Z

80µs PULSE TEST

VGS = 7V

VGS = 6V

VGS = 5V

θJC

2

+ T

C

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS

5-4

IRF234, IRF235, IRF236, IRF237

Typical Performance Curves

15

80ms PULSE TEST

12

9

6

, DRAIN CURRENT (A)

D

I

3

0

2468010
V

DRAIN TO SOURCE VOLTAGE (V)

DS,

FIGURE 6. SATURATION CHARACTERISTICS FIGURE 7. TRANSFER CHARACTERISTICS

4.0

80µs PULSE TEST

3.2

2.4

VGS = 10V

VGS = 4.0V

Unless Otherwise Specified (Continued)

100

VGS = 8V

10

VGS = 7V

VGS = 6V

VGS = 5V

1

, DRAIN CURRENT (A)

D

I

0.1
0246810

3.0

2.4

1.8

V

= 2 x V

DS

80µs PULSE TEST

ID = 4.1A

VGS = 10V

GS

TJ = 150oC

VGS, GATE TO SOURCE VOLTAGE (V)

TJ = 25oC

1.6

0.8

DRAIN TO SOURCE ON RESISTANCE

0

040

816

ID,DRAIN CURRENT (A)

VGS = 10V

24

VGS = 20V

32

FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs

GATE VOLTAGE AND DRAIN CURRENT

1.25
ID = 250µA

1.15

1.05

0.95

BREAKDOWN VOLTAGE

0.85

NORMALIZED DRAIN TO SOURCE

0.75

0-40 40 80 120 140

-20 20 100 160
T

, JUNCTION TEMPERATURE (oC)

J

60-60

1.2

0.6

ON RESISTANCE VOLTAGE

NORMALIZED DRAIN TO SOURCE

0

-20-40 20 40 100 140

0 60 120 160

, JUNCTION TEMPERATURE (oC)

T

J

FIGURE 9. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

1500

VGS = 0V, f = 1MHz
C

= CGS + C

ISS

C

= C

RSS

1200

C

≈ CDS + C

OSS

900

600

C, CAPACITANCE (pF)

300

0

1 10 100

GD

GD

GD

C

ISS

C

OSS

C

RSS

V

DRAIN TO SOURCE VOLTAGE (V)

DS,

80-60

FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN

VOLTAGE vs JUNCTION TEMPERATURE

FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

5-5

IRF234, IRF235, IRF236, IRF237

Typical Performance Curves

10

V

≥ 50V

DS

80µs PULSE TEST

8

6

4

, TRANSCONDUCTANCE (S)

2

fs

g

0

36912015

ID,DRAIN CURRENT (A)

TJ = 25oC

TJ = 150oC

Unless Otherwise Specified (Continued)

2

10

10

TJ = 150oC

1

, SOURCE TO DRAIN CURRENT (A)

SD

I

0.1
0 0.4 0.8 1.2 1.6 2.0

TJ = 25oC

VSD, SOURCE TO DRAIN VOLTAGE (V)

FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE

20

ID = 8.1A

16

VDS = 50V

12

VDS = 125V

V

= 200V

8

4

GATE TO SOURCE VOLTAGE (V)

GS,

V

0

10 20 30 40050

Q

TOTAL GATE CHARGE (nC)

g(TOT),

DS

FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE

5-6

IRF234, IRF235, IRF236, IRF237

Test Circuits and Waveforms

V

DS

BV

DSS

L

VARY t

TO OBTAIN

P

REQUIRED PEAK I

V

GS

AS

R

G

+

V

DD

-

DUT

0V

P

I

AS

0.01Ω

0

t

FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS

t

P

I

AS

t

AV

V

DS

V

DD

V

GS

12V

BATTERY

t

ON

t

d(ON)

t

R

L

+

V

R

G

DD

-

V

DS

90%

0

r

10%

DUT

V

GS

10%

0

50%

PULSE WIDTH

t

d(OFF)

90%

t

OFF

50%

t

f

10%

FIGURE 17. SWITCHING TIME TEST CIRCUIT FIGURE 18. RESISTIVE SWITCHING WAVEFORMS

V

DS

D

(ISOLATED
SUPPLY)

SAME TYPE
AS DUT

V

DD

Q

g(TOT)

Q

gd

Q

gs

V

DS

V

GS

0.2µF

50kΩ

CURRENT

REGULATOR

0.3µF

90%

G

I

0

G(REF)

IG CURRENT

SAMPLING

RESISTOR RESISTOR

FIGURE 19. GATE CHARGE TEST CIRCUIT

DUT

S

CURRENT

I

D

SAMPLING

0

I

V

DS

G(REF)

0

FIGURE 20. GATE CHARGE WAVEFORMS

5-7