Datasheet IRF232, IRF230, IRF233, IRF231 Datasheet (Intersil)

October 1997

Semiconductor

IRF230, IRF231,

IRF232, IRF233

8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 Ohm,
N-Channel Power MOSFETs

Features

• 8.0A and 9.0A, 150V and 200V

•r

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 0.4Ω and 0.6Ω

DS(ON)

Components to PC Boards”

Ordering Information

P AR T NUMBER P ACKAGE BRAND

IRF230 TO-204AA IRF230
IRF231 TO-204AA IRF231
IRF232 TO-204AA IRF232
IRF233 TO-204AA IRF233

Description

These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching conver­tors, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. These types can be operated directly from
integrated circuits.

Formerly developmental type TA17412.

Symbol

D

G

S

NOTE: When ordering, use the entire part number.

Packaging

DRAIN
(FLANGE)

JEDEC TO-204AA

GATE (PIN 1)

SOURCE (PIN 2)

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright

© Harris Corporation 1997

1

File Number 1568.2

IRF230, IRF231, IRF232, IRF233

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

IRF230 IRF231 IRF232 IRF233 UNITS

Drain to Source Breakdown Voltage (Note 1). . . . . . . . . .V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . V

DGR

Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . I

TC= 100oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . .V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . .P

DS

D
D

DM

GS

D

200 150 200 150 V
200 150 200 150 V

9.0

6.0

9.0

6.0

8.0

5.0

8.0

5.0

36 36 32 32 A

±20 ±20 ±20 ±20 V

75 75 75 75 W

A
A

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 0.6 0.6 0.6 W/oC

Single Pulse Avalanche Energy Rating (Note 4) . . . . . . .E

Operating and Storage Temperature . . . . . . . . . . . . TJ,T

AS

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

150 150 150 150 mJ

-55 to 150 -55 to 150 -55 to 150 -55 to 150

300
260

300
260

300
260

300
260

o

C

o

C

o

C

NOTE:

1. TJ = 25oC to TJ = 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV

DSSID

= 250µA, VGS = 0V, (Figure 10)

IRF230, IRF232 200 - - V

IRF231, IRF233 150 - - V
Gate Threshold Voltage V
Gate to Source Leakage Current I
Zero Gate Voltage Drain Current I

GS(TH)VGS

GSSVGS
DSSVDS

= VDS, ID = 250µA 2.0 - 4.0 V

= ±20V ±100 nA
= Rated BV
= 0.8 x Rated BV

V

DS

, VGS = 0V - - 25 µA

DSS

DSS

, VGS = 0V

- - 250 µA

TJ= 125oC

On-State Drain Current (Note 2) I

D(ON)VDS

> I

D(ON)

x r

DS(ON)MAX

, VGS = 10V

IRF230, IRF231 9.0 - - A
IRF232, IRF233 8.0 - - A

Drain to Source On Resistance (Note 2) r

DS(ON)ID

= 5A, VGS = 10V, (Figure 8, 9)

IRF230, IRF231 - 0.25 0.4 Ω

IRF232, IRF233 - 0.4 0.6 Ω
Forward Transconductance (Note 2) g
Turn-On Delay Time t

d(ON)VDD

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Total Gate Charge

Q

g(TOT)VGS

(Gate to Source + Gate to Drain)
Gate to Source Charge Q
Gate to Drain “Miller” Charge Q

VDS≥ 50V, ID = 5A, (Figure 12) 3.0 4.8 - S

fs

= 90V, ID≈ 5A,RG = 15Ω, RL =18Ω

(Figures 17, 18) MOSFET Switching Times are

r

Essentially Independent of Operating
Temperature

f

= 10V, ID = 12A, VDS = 0.8V x Rated BV

I

= 1.5mA, (Figures 14, 19, 20) Gate

g(REF)

Charge is Essentially Independent of Operating

gs

Temperature

gd

DSS,

- - 30 ns

- - 50 ns

- - 50 ns

- - 40 ns

-1930nC

-10-nC

-9-nC

2

IRF230, IRF231, IRF232, IRF233

Electrical Specifications T

= 25oC, Unless Otherwise Specified (Continued)

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Internal Drain Inductance L

Internal Source Inductance L

Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Continuous Source to Drain Current I
Pulse Source to Drain Current

(Note 3)

SD

I

SDM

ISSVDS

= 25V, VGS = 0V, f = 1MHz

(Figure 11)

OSS
RSS

Measured Between the

D

Contact Screw on the
Flange that is Closer to
Source and Gate Pins
and the Center of Die

Measured From The

S

Source Lead, 6mm
(0.25in) From the Flange
and the Source Bonding
Pad

θJC

Free Air Operation - - 30oC/W

θJA

Modified MOSFET Sym­bol Showing the Integral

Modified MOSFET
Symbol Showing the
Internal Devices
Inductances

D

L

D

G

L

S

S

D

Reverse P-N Junction

- 600 - pF

- 250 - pF

-80-pF

- 5.0 - nH

- 12.5 - nH

- - 1.6oC/W

- - 9.0 A

- - 36 A

Diode

G

S

Source to Drain Diode Voltage (Note 2) V
Reverse Recovery Time t
Reverse Recovered Charge Q

TJ = 25oC, ISD = 9.0A, VGS = 0V, (Figure 13) - - 2.0 V

SD

TJ = 150oC, ISD = 9.0A, dISD/dt = 100A/µs - 450 - ns

rr

TJ = 150oC, ISD = 9.0A, dISD/dt = 100A/µs - 3.0 - µC

RR

NOTES:

2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by max junction temperature. See Transient Thermal Impedance curve (Figure 3).

4. VDD= 20V, starting TJ= 25oC, L = 3.37mH, RG=50Ω, peak IAS = 9A. See Figures 15, 16.

3

IRF230, IRF231, IRF232, IRF233

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 50 100 150

TC, CASE TEMPERATURE (oC)

Unless Otherwise Specified

FIGURE 1. NORMALIZED POWER DISSIP ATION vs CASE

TEMPERA TURE

2

1.0

10

8

IRF230, IRF231

6

4

DRAIN CURRENT (A)

D,

I

2

0

IRF232, IRF233

50 75 100 15025

TC,CASE TEMPERATURE (oC)

125

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

0.5

0.2

0.1

0.1

0.05

0.02

0.01

JC

θ

10

0.1

0.01

1

SINGLE PULSE

-5

10

IRF230,1

IRF232, 3
IRF230,1

IRF232, 3

OPERATION IN THIS
AREA IS LIMITED
BY r

DS(ON)

VDS, DRAIN TO SOURCE VOLTAGE (V)

, TRANSIENT THERMAL IMPEDANCE
Z

100

, DRAIN CURRENT (A)

D

I

P

DM

t

1

t

2

NOTES:
DUTY FACTOR: D = t
PEAK TJ= PDM x Z

-4

10

-3

10

, RECTANGULAR PULSE DURATION (s)

t

1

-2

10

0.1 1 10

θJC

1/t2

+ T

C

FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE

IRF231, 3

TC = 25oC
T

= MAX RATED

J

SINGLE PULSE

10µs

100µs

1ms

10ms
100ms

DC

IRF230, 2

20

16

12

8

, DRAIN CURRENT (A)

D

I

4

10001 10 100

0

10V

8V

20 40 600 100

VDS, DRAIN TO SOURCE VOLTAGE (V)

80µs PULSE TEST

7V

VGS = 6V

5V

4V

80

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS

4

IRF230, IRF231, IRF232, IRF233

Typical Performance Curves

10

80µs PULSE TEST

8

6

4

, DRAIN CURRENT (A)

D

I

2

0

123405
VDS, DRAIN TO SOURCE VOLTAGE (V)

Unless Otherwise Specified (Continued)

FIGURE 6. SATURATION CHARACTERISTICS FIGURE 7. TRANSFER CHARACTERISTICS

0.8

80µs PULSE TEST

VGS = 10V

10V
9V
8V
7V
6V

VGS= 5.0V

4.0V

10

VDS > I
80µs PULSE TEST

8

6

4

, DRAIN CURRENT (A)

D

I

2

0

2.2
ID = 3.5A

VGS = 10V

1.8

x r

D(ON)

DS(ON)MAX

125oC

25oC

-55oC

123405

VGS, GATE TO SOURCE VOLTAGE (V)

67

0.6

, DRAIN TO SOURCE

ON RESISTANCE (Ω)

0.2

DS(ON)

r

0

10 20 30040

ID, DRAIN CURRENT (A)

VGS = 20V

NOTE: Heating effect of 2µs pulse is minimal.

FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT

1.25
ID = 250µA

1.15

1.05

0.95

BREAKDOWN VOLTAGE

0.85

NORMALIZED DRAIN TO SOURCE

0.75

-40 40 80 120

0 160

TJ, JUNCTION TEMPERATURE (oC)

1.4

1.0

ON RESISTANCE

0.6

NORMALIZED DRAIN TO SOURCE

0.2

-40 -20 20 40 80 100 140120

060-60

TJ, JUNCTION TEMPERATURE (oC)

FIGURE 9. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

2000

1600

1200

800

C, CAPACITANCE (pF)

400

0

1

C

OSS

C

RSS

10
V

DS

20

, DRAIN TO SOURCE VOLTAGE (V)

C

ISS

30

VGS = 0V, f = 1MHz
C

= CGS + C

ISS

C

= C

RSS

C

OSS

GD

≈ CDS + C

40

GD

GD

50

FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN

VOLTAGE vs JUNCTION TEMPERATURE

FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

5

IRF230, IRF231, IRF232, IRF233

Typical Performance Curves

10

80µs PULSE TEST

8

6

4

, TRANSCONDUCTANCE (S)

2

fs

g

0

2468010

ID, DRAIN CURRENT (A)

TJ = -55oC

Unless Otherwise Specified (Continued)

TJ = 25oC

TJ = 125oC

2

10

10

TJ = 150oC

T

= 25oC

J

, SOURCE TO DRAIN CURRENT (A)

SD

I

1

01234

VSD, SOURCE TO DRAIN VOLTAGE (V)

FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE

20

ID = 9A

VDS = 160V
V

= 100V

15

DS

VDS = 40V

10

5

, GATE TO SOURCE VOLTAGE (V)

GS

V

0

81624320

Q

, TOTAL GATE CHARGE (nC)

g(TOT)

FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE

6

IRF230, IRF231, IRF232, IRF233

Test Circuits and Waveforms

V

DS

BV

DSS

L

VARY t

TO OBTAIN

P

REQUIRED PEAK I

V

GS

AS

R

G

+

V

DD

-

DUT

0V

P

I

AS

0.01Ω

0

t

FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS

t

P

I

AS

t

AV

V

DS

V

DD

t

ON

t

d(ON)

t

R

L

+

V

R

G

DD

-

V

DS

90%

0

r

10%

DUT

V

GS

V

GS

10%

0

50%

PULSE WIDTH

FIGURE 17. SWITCHING TIME TEST CIRCUIT FIGURE 18. RESISTIVE SWITCHING WAVEFORM

V

DS

12V

BATTERY

0

0.2µF

I

g(REF)

CURRENT

REGULATOR

50kΩ

0.3µF

G

IG CURRENT

SAMPLING

RESISTOR RESISTOR

SAME TYPE
AS DUT

D

DUT

S

CURRENT

I

D

SAMPLING

(ISOLATED
SUPPLY)

V

DS

V

DD

Q

g(TOT)

Q

gd

Q

gs

V

DS

0

I

G(REF)

0

t

d(OFF)

90%

V

GS

t

OFF

50%

t

f

90%

10%

FIGURE 19. GATE CHARGE TEST CIRCUIT FIGURE 20. GATE CHARGE WAVEFORMS

7