Datasheet IRF223, IRF222, IRF220, IRF221 Datasheet (Intersil)

October 1997

Semiconductor

IRF220, IRF221,

IRF222, IRF223

4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm,
N-Channel Power MOSFETs

Features

• 4.0A and 5.0A, 150V and 200V

•r

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Device

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 0.8Ω and 1.2Ω

DS(ON)

Components to PC Boards”

Ordering Information

PART NUMBER PACKAGE BRAND

IRF220 TO-204AA IRF220
IRF221 TO-204AA IRF221
IRF222 TO-204AA IRF222
IRF223 TO-204AA IRF223

Description

These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching conver­tors, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. These types can be operated directly from
integrated circuits.

Formerly developmental type TA09600.

Symbol

D

G

S

NOTE: When ordering, use the entire part number.

Packaging

DRAIN
(FLANGE)

JEDEC TO-204AA

GATE (PIN 1)

SOURCE (PIN 2)

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright

© Harris Corporation 199&

1

File Number 1567.2

IRF220, IRF221, IRF222, IRF223

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

IRF220 IRF221 IRF222 IRF223 UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . V

DGR

Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . I

TC= 100oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . .V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . .P

DS

D
D

DM

GS

D

200 150 200 150 V
200 150 200 150 V

5.0

3.0

5.0

3.0

4.0

2.5

4.0

2.5

20 20 16 16 A

±20 ±20 ±20 ±20 V

40 40 40 40 W

A
A

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.32 0.32 0.32 0.32 W/oC

Single Pulse Avalanche Rating. . . . . . . . . . . . . . . . . . . . .E

Operating and Storage Temperature . . . . . . . . . . . .TJ,T

AS

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

85 85 85 85 mJ

-55 to 150 -55 to 150 -55 to 150 -55 to 150

300
260

300
260

300
260

300
260

o

C

o

C

o

C

NOTE:

1. TJ= 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV

DSSID

= 250µA, VGS = 0V, (Figure 10)

IRF220, IRF222 200 - - V

IRF221, IRF223 150 - - V
Gate Threshold Voltage V
Zero Gate Voltage Drain Current I

On-State Drain Current (Note 2) I

GS(TH)VDS

DSSVDS

D(ON)VDS

= VGS, ID = 250µA 2.0 - 4.0 V
= Rated BV

VDS = 0.8 x Rated BV

> I

D(ON)

, VGS = 0V - - 25 µA

DSS

, VGS = 0V, TJ = 125oC - - 250 µA

DSS

x r

DS(ON)MAX

, VGS = 10V

IRF220, IRF221 5.0 - - A

IRF222, IRF223 4.0 - - A
Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r

GSSVGS

DS(ON)ID

= ±20V - - ±100 nA

= 2.5A, VGS = 10V, (Figure 8)

IRF220, IRF221 - 0.5 0.8 Ω

IRF222, IRF223 - 0.8 1.2 Ω
Forward Transconductance (Note 2) g
Turn-On Delay Time t

d(ON)VDD

VDS > I

fs

= 0.5 x Rated BV

D(ON)

x r

DS(ON)MAX

, ID = 2.5A 1.3 2.5 - S

, ID≈ 2.5A, RG = 50Ω

DSS

-2040ns

For IRF220, 222 RL = 80Ω

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Total Gate Charge

Q

g(TOT)VGS

(Gate to Source + Gate to Drain)

For IRF221, 223 RL = 60Ω

r

(Figures 17, 18) MOSFET Switching Times are
Essentially Independent of Operating
Temperature

f

= 10V, ID = 6.0A, VDS = 0.8 x Rated BV

I

= 1.5mA, (Figures 14, 19, 20) Gate

g(REF)

DSS

-3060ns

- 50 100 ns

-3060ns

-1115nC

Charge is Essentially Independent of Operating

Gate to Source Charge Q
Gate to Drain “Miller” Charge Q

gs

gd

Temperature

- 5.0 - nC

- 6.0 - nC

2

IRF220, IRF221, IRF222, IRF223

Electrical Specifications T

= 25oC, Unless Otherwise Specified (Continued)

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Internal Drain Inductance L

Internal Source Inductance L

Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

ISSVDS

= 25V, VGS = 0V, f = 1MHz

- 450 - pF

(Figure 11)

OSS

RSS

Measured Between the

D

Contact Screw on the
Flange that is Closer to
Source and Gate Pins and
the Center of Die

Measured From the

S

Modified MOSFET
Symbol Showing the
Internal Device
Inductances

D

L

D

- 150 - pF

-40-pF

- 5.0 - nH

- 12.5 - nH
Source Lead, 6mm
(0.25in) From the Flange
and the Source Bonding
Pad

θJC

Free Air Operation - - 30oC/W

θJA

G

L

S

S

- - 3.12oC/W

Continuous Source to Drain Current I

IRF220, IRF221 - - 5.0 A
IRF222, IRF223 - - 4.0 A

Pulse Source to Drain Current (Note 3) I

Modified MOSFET

SD

Symbol Showing the
Integral Reverse
P-N Junction Rectifier

SDM

D

G

IRF220, IRF221 - - 20 A
IRF222, IRF223 - - 16 A

S

Source to Drain Diode Voltage (Note 2) V

SD

IRF220, IRF221 TC = 25oC, ISD = 5.0A, VGS = 0V, (Figure 13) - - 2.0 V

IRF222, IRF223 TC = 25oC, ISD = 4.0A, VGS = 0V, (Figure 13) - - 1.8 V
Reverse Recovery Time t
Reverse Recovery Charge Q

TJ = 150oC, ISD = 5.0A, dISD/dt = 100A/µs - 350 - ns

rr

TJ = 150oC, ISD = 5.0A, dISD/dt = 100A/µs - 2.3 - µC

RR

NOTES:

2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).

4. VDD= 10V, starting TJ= 25oC, L = 6.18mH, RG= 50Ω, peak IAS = 5A. See Figures 15, 16.

3

IRF220, IRF221, IRF222, IRF223

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 50 100 150

TC, CASE TEMPERATURE (oC)

Unless Otherwise Specified

FIGURE 1. NORMALIZED POWER DISSIPATION vs

CASE TEMPERATURE

1.0

5

4

3

IRF222, IRF223

2

, DRAIN CURRENT (A)

D

I

1

0

25 50 75 100

TC, CASE TEMPERATURE (oC)

IRF220, IRF221

125

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

150

0.5

0.2

0.1

0.1

0.05

THERMAL IMPEDANCE

0.01

0.02

0.01

SINGLE PULSE

-5

10

-4

10

-3

10

t1, RECTANGULAR PULSE DURATION (s)

, NORMALIZED TRANSIENT

θJC

Z

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

100

IRF220, IRF221
IRF222, IRF223

10

IRF220, IRF221
IRF222, IRF223

1.0

, DRAIN CURRENT (A)

D

I

TC = 25oC

= MAX RATED

T

J

SINGLE PULSE

0.1

1.0 10 100 1000

OPERATION IN THIS AREA
IS LIMITED BY r

VDS, DRAIN TO SOURCE VOLTAGE (V)

DC

DS(ON)

IRF221
IRF223

100µs
10µs

1ms

10ms

100ms
IRF220

IRF222

P

DM

t

1

t

x R

θJC

VGS = 7V

VGS = 6V

VGS = 5V

VGS = 4V

2

2

NOTES:
DUTY FACTOR: D = t1/t

PEAK TJ = PDM x Z

-2

10

10

10V

8

6

4

, DRAIN CURRENT (A)

D

I

2

0

0 20 40 60 80 100

-1

10

80µs PULSE TEST

, DRAIN TO SOURCE VOLTAGE (V)

V

DS

1

θJC

+ T

C

10

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS

4

IRF220, IRF221, IRF222, IRF223

Typical Performance Curves

5

4

3

2

, DRAIN CURRENT (A)

D

I

1

0

0 24 6810

10V

6V

VGS = 5V

V

, DRAIN TO SOURCE VOLTAGE (V)

DS

Unless Otherwise Specified (Continued)

80µs PULSE TEST

8V

4V

FIGURE 6. SATURATION CHARACTERISTICS FIGURE 7. TRANSFER CHARACTERISTICS

1.5

1.0
VGS = 10V

10

80µs PULSE TEST
V

>I

D(ON)

= 25oC

J

= -55oC

J

V

VGS = 10V
ID = 2A

x r

GS

DS

8

6

4

, DRAIN CURRENT (A)

D

TJ = 125oC

I

2

T
T

0

024 6810

2.2

1.8

1.4

MAX

DS(ON)

, GATE TO SOURCE VOLTAGE (V)

, DRAIN TO SOURCE

0.5

ON RESISTANCE (Ω)

DS(ON)

r

0

0 5 10 15 20

, DRAIN CURRENT (A)

I

D

VGS = 20V

NOTE: Heating effect of 2µs is minimal.

FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT

1.25
ID = 250µA

1.15

1.05

0.95

BREAKDOWN VOLTAGE

0.85

NORMALIZED DRAIN TO SOURCE

0.75

-40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)

1.0

ON RESISTANCE

0.6

NORMALIZED DRAIN TO SOURCE

0.2

-40 0 40 80 120
T

, JUNCTION TEMPERATURE (oC)

J

FIGURE 9. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

1000

VGS = 0V, f = 1MHz
C

= CGS + C

ISS

C

800

600

C

400

C, CAPACITANCE (pF)

200

0

01020304050

ISS

C

OSS

C

RSS

VDS, DRAIN TO SOURCE VOLTAGE (V)

C

RSS
OSS

= C

GD

≈ CDS + C

GD

GD

FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN

VOLTA GE vs JUNCTION TEMPERATURE

FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

5

IRF220, IRF221, IRF222, IRF223

Typical Performance Curves

5

VDS > I
80µs PULSE TEST

4

3

2

, TRANSCONDUCTANCE (S)

1

fs

g

0

0246 810

D(ON)

x r

DS(ON)MAX

I

, DRAIN CURRENT (A)

D

Unless Otherwise Specified (Continued)

2

TJ = -55oC

TJ = 25oC

TJ = 125oC

100

10

TJ = 150oC

, SOURCE TO DRAIN CURRENT (A)

SD

I

1.0
01 23 4

TJ = 25oC

TJ = 25oC

VSD, SOURCE TO DRAIN VOLTAGE (V)

FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE

20

ID = 6.0A

15

VDS = 100V

VDS = 40V

TJ = 150oC

10

5

, GATE TO SOURCE VOLTAGE (V)

GS

V

0

048121620

TOTAL GATE CHARGE (nC)

Q

g(TOT),

VDS = 160V
IRF220, IRF222

FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE

6

IRF220, IRF221, IRF222, IRF223

Test Circuits and Waveforms

V

DS

BV

DSS

L

VARY t

TO OBTAIN

P

REQUIRED PEAK I

V

GS

AS

R

G

+

V

DD

-

DUT

0V

P

I

AS

0.01Ω

0

t

FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED INDUCTIVE WAVEFORMS

t

P

I

AS

t

AV

V

DS

V

DD

t

ON

t

d(ON)

t

R

L

+

V

R

G

DD

-

V

DS

0

r

90%

10%

DUT

V

GS

V

GS

10%

0

50%

PULSE WIDTH

FIGURE 17. SWITCHING TIME TEST CIRCUIT FIGURE 18. RESISTIVE SWITCHING WAVEFORMS

V

DS

(ISOLATED
SUPPLY)

SAME TYPE
AS DUT

V

DD

Q

g(TOT)

Q

gd

Q

gs

12V

BATTERY

0.2µF

50kΩ

CURRENT

REGULATOR

0.3µF

t

d(OFF)

90%

V

GS

t

OFF

50%

t

f

10%

90%

G

I

0

g(REF)

IG CURRENT

SAMPLING

RESISTOR RESISTOR

FIGURE 19. GATE CHARGE TEST CIRCUIT

D

S

CURRENT

I

D

SAMPLING

DUT

V

DS

0

I

V

DS

G(REF)

0

FIGURE 20. GATE CHARGE WAVEFORMS

7