Datasheet IRF153, IRF152, IRF151, IRF150 Datasheet (Intersil)

IRF150

Data Sheet March 1999

40A, 100V, 0.055 Ohm, N-Channel
Power MOSFET

This N-Channel enhancementmode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdownavalanchemodeof operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.

Formerly Developmental Type TA17421.

Ordering Information

PART NUMBER PACKAGE BRAND

IRF150 TO-204AE IRF150

NOTE: When ordering, include the entire part number.

File Number

Features

• 40A, 100V

•r

DS(ON)

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 0.055Ω

Components to PC Boards”

Symbol

D

G

1824.3

Packaging

DRAIN
(FLANGE)

JEDEC TO-204AE

GATE (PIN 1)

S

SOURCE (PIN 2)

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

IRF150

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

IRF150 UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DS

DGR

100 V
100 V

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID 40 A

TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

D
DM
GS

D

25 A
160 A
±20 V
150 W

Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2 W/oC

Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

AS

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

150 mJ

-55 to 150

300
260

o

C

o

C

o

C

NOTE:

1. TJ = 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate to Threshold Voltage V

GS(TH)VGS

Zero Gate Voltage Drain Current I

On-State Drain Current (Note 2) I

D(ON)VDS

Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r

DS(ON)VGS

Forward Transconductance (Note 2) g
Turn-On Delay Time t

d(ON)VDD

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Total Gate Charge

Q

g(TOT)VGS

(Gate to Source + Gate to Drain)
Gate to Source Charge Q
Gate to Drain “Miller” Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Internal Drain Inductance L

Internal Source Inductance L

Thermal Impedance Junction to Case R
Thermal Impedance Junction to Ambient R

DSSVGS

DSS

GSS

fs

r

f

gs
gd

ISS
OSS
RSS

D

S

θJC

θJA

= 0V, ID = 250µA (Figure 10) 100 - - V

= VDS, ID = 250µA 2.0 - 4.0 V
VDS = Rated BV
VDS = 0.8 x Rated BV

> I

D(ON) xrDS(ON)MAX

, VGS = 0V - - 25 µA

DSS

, VGS = 0V, TJ = 125oC - - 250 µA

DSS

, VGS = 10V 40 - - A

VGS = ±20V - - ±100 nA

= 10V, ID = 20A (Figures 8, 9) - 0.045 0.055 Ω
VDS> I

D(ON) xrDS(ON)MAX

= 24V, ID≈ 20A, RG = 4.7Ω, RL = 1.2Ω
(Figures 17, 18) MOSFET Switching Times are
Essentially Independent of Operating Temperature

, ID = 20A (Figure 12) 9.0 11 - S

- - 35 ns

- - 100 ns

- - 125 ns

- - 100 ns

= 10V, ID = 50A, VDS = 0.8 x Rated BV

I

= -1.5mA (Figures 14, 19, 20) Gate Charge

g(REF)

is Essentially Independent of Operating
Temperature

DSS

,

- 63 120 nC

-27-nC

-36-nC

VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 11) - 2000 - pF

- 1000 - pF

- 350 - pF

Measured between the
Contact Screw on the
Flange that is Closer to
SourceandGate Pinsand
the Center of Die

Measured from the
Source Lead, 6mm
(0.25in) from the Flange
and the Source Bonding
Pad

Free Air Operation - - 30

Modified MOSFET
Symbol Showing the
Internal Devices
Inductances

D

L

D

G

L

S

S

- 5.0 - nH

- 12.5 - nH

- - 0.8

o
o

C/W
C/W

2

IRF150

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Continuous Source to DrainCurrent I
Pulse Source to Drain Current (Note 3) I

SD

SDM

Diode Source to Drain Voltage (Note 2) V
Reverse Recovery Time t
Reverse Recovery Charge Q

NOTES:

2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).

4. VDD = 10V, starting TJ = 25oC, L = 170µH, RG = 50Ω, Peak IAS = 40A. See Figures 15, 16.

Modified MOSFET
Symbol Showing the
Integral Reverse P-N

D

- - 40 A

- - 160 A

Junction Diode

G

S

TJ = 25oC, ISD= 40A, VGS = 0V (Figure 13) - - 2.5 V

SD

TJ = 150oC, ISD = 40A, dISD/dt = 100A/µs - 600 - ns

rr

TJ = 25oC, ISD = 5.5A, dISD/dt = 100A/µs - 3.3 - µC

RR

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 50 100 150

TC, CASE TEMPERATURE (oC)

Unless Otherwise Specified

FIGURE 1. NORMALIZED POWERDISSIPATION vs CASE

TEMPERATURE

1.0

0.1

0.01

0.5

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

-5

10

-4

10

10

C/W)

o

, TRANSIENT THERMAL

IMPEDANCE (

θJC

Z

40

32

24

16

DRAIN CURRENT (A)

D,

I

8

0

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

-3

t

, RECTANGULAR PULSE DURATION (s)

1

-2

10

50 75 10025 150

TC, CASE TEMPERATURE (oC)

125

CASE TEMPERATURE

P

DM

t

1

t

t

2

θJC

2

+ T

2

C

NOTES:
DUTY FACTOR: D = t1/t
TJ = PDM x Z

0.1 1 10

FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE

3

IRF150

Typical Performance Curves

3

10

2

10

10

, DRAIN CURRENT (A)

TJ = MAX RATED

D

I

= 25oC

T

C

SINGLE PULSE

1

110

VDS, DRAIN TO SOURCE VOLTAGE (V)

OPERATION IN THIS
REGION IS LIMITED
BY r

DS(ON)

Unless Otherwise Specified (Continued)

50

40

10

10µs
100µs

1ms

10ms
100ms

DC

2

3

10

30

20

, DRAIN CURRENT (A)

D

I

10

10V

0

9V

VGS = 8V

7V

6V

5V
4V

10 20 30 40050

VDS, DRAIN TO SOURCE VOLTAGE (V)

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS

20

16

12

8

, DRAIN CURRENT (A)

D

I

4

0

VGS = 10V

0.4 0.8 1.2 1.60 2.0
VDS, DRAIN TO SOURCE VOLTAGE (V)

7V

6V

5V

4V

80µs PULSE TEST

9V

8V

30

>I

V

DS

D(ON)xrDS(ON)MAX

80µs PULSE TEST

25

20

15

10

, DRAIN CURRENT (A)

D

I

5

0

01234 8

VGS, GATE TO SOURCE VOLTAGE (V)

TJ = 125oC

TJ = 25oC

TJ = -55oC

80µs PULSE TEST

567

FIGURE 6. SATURATION CHARACTERISTICS FIGURE 7. TRANSFER CHARACTERISTICS

0.20

0.14
VGS = 10V

0.10

, DRAIN TO SOURCE

ON RESISTANCE (Ω)

0.06

DS(ON)

r

0.02

0 160

40 80

ID, DRAIN CURRENT (A)

VGS = 20V

120

NOTE: Heating effect of 2µs is minimal.

FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT

4

2.2
ID = 14A

= 10V

V

GS

1.8

1.4

1.0

ON RESISTANCE

0.6

NORMALIZED DRAIN TO SOURCE

0.2

0 60 120

-20-40 20 40 100 140
T

, JUNCTION TEMPERATURE (oC)

J

80-60

FIGURE 9. NORMALIZED DRAIN TOSOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

IRF150

Typical Performance Curves

1.25
ID = 250µA

1.15

1.05

0.95

BREAKDOWN VOLTAGE

0.85

NORMALIZED DRAIN TO SOURCE

0.75

-20 20 100 160

0-40 40 80 120 140

, JUNCTION TEMPERATURE (oC)

T

J

60

Unless Otherwise Specified (Continued)

FIGURE 10. NORMALIZED DRAINTOSOURCE BREAKDOWN

VOLTAGE vs JUNCTION TEMPERATURE

20

80µs PULSE TEST

16

12

TJ = -55oC

TJ = 25oC

TJ = 125oC

4000

3200

2400

C

ISS

1600

C

C, CAPACITANCE (pF)

800

0

010 304050

VDS, DRAIN TO SOURCE VOLTAGE (V)

OSS

C

RSS

20

VGS = 0V, f = 1MHz
C

= CGS + C

C
C

ISS
RSS

OSS

= C

GD

≈ CDS + C

GD

GD

FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

2

2

10

TJ = 150oC

8

, TRANSCONDUCTANCE (S)

4

fs

g

0

10 20 30 40050

ID, DRAIN CURRENT (A)

10

TJ = 25oC

, SOURCE TO DRAIN CURRENT (A)

SD

I

1.0
01234

VSD, SOURCE TO DRAIN VOLTAGE (V)

FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE

20

ID = 40A
FOR TEST CIRCUIT,

SEE FIGURE 19

15

10

5

, GATE TO SOURCE VOLTAGE (V)

GS

V

0

VDS = 20V

VDS = 50V

VDS = 80V

28 56 84 1120 140

Q

, TOTAL GATE CHARGE (nC)

g(TOT)

FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE

5

IRF150

Test Circuits and Waveforms

V

DS

BV

DSS

L

VARY t

TO OBTAIN

P

REQUIRED PEAK I

V

GS

AS

R

G

+

V

DD

-

DUT

0V

P

I

AS

0.01Ω

0

t

FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS

t

P

I

AS

t

AV

V

DS

V

DD

t

ON

t

d(ON)

t

R

L

+

V

R

G

DD

-

V

DS

90%

0

r

10%

DUT

V

GS

V

GS

10%

0

50%

PULSE WIDTH

FIGURE 17. SWITCHING TIME TEST CIRCUIT FIGURE 18. RESISTIVE SWITCHING WAVEFORMS

V

DS

(ISOLATED
SUPPLY)

SAME TYPE
AS DUT

V

DD

Q

g(TOT)

Q

gd

Q

gs

12V

BATTERY

0.2µF

50kΩ

CURRENT

REGULATOR

0.3µF

t

d(OFF)

90%

V

GS

t

OFF

50%

t

f

10%

90%

D

V

DS

S

CURRENT

I

D

SAMPLING

DUT

0

V

DS

I

G(REF)

0

G

I

0

g(REF)

IG CURRENT

SAMPLING

RESISTOR RESISTOR

FIGURE 19. GATE CHARGE TEST CIRCUIT FIGURE 20. GATE CHARGE WAVEFORMS

6

IRF150

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