Datasheet IRF140, IRF143, IRF142 Datasheet (Intersil)

IRF140

Data Sheet March 1999

28A, 100V, 0.077 Ohm, N-Channel
Power MOSFET

This N-Channel enhancementmode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdownavalanchemodeof operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.

Formerly developmental type TA17421.

Ordering Information

PART NUMBER PACKAGE BRAND

IRF140 TO-204AE IRF140

NOTE: When ordering, use the entire part number .

File Number

Features

• 28A, 100V

DS(ON)

= 0.077Ω

•r

• Single Pulse Avalanche Energy Rated

• SOA is Power-Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Device

Symbol

D

G

S

2306.3

Packaging

DRAIN
(FLANGE)

GATE (PIN 1)

JEDEC TO-204AE

SOURCE (PIN 2)

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

IRF140

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

IRF140 UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DGR

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

TC= 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Gate To Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

DS

D
D

DM

GS

D

100 V
100 V

28

20
110 A
±20 V
150 W

A
A

Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0 W/oC

Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ,T

AS

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

100 mJ

-55 to 175

300
260

o

C

o

C

o

C

NOTE:

1. TJ= 25oC to 150oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V

GS(TH)VDS

Zero Gate Voltage Drain Current I

On-State Drain Current (Note 2) I

D(ON)VDS

Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r

DS(ON)ID

Forward Transconductance (Note 2) g
Turn-On Delay Time t

D(ON)VDD

Rise Time t
Turn-Off Delay Time t

D(OFF)

Fall Time t
Total Gate Charge

Q

g(TOT)VGS

(Gate to Source + Gate to Drain)
Gate to Source Charge Q
Gate to Drain “Miller” Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Internal Drain Inductance L

Internal Source Inductance L

Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Ambient R

DSSID

DSS

GSS

fs

r

f

gs
gd

ISS
OSS
RSS

D

S

θJC

θJA

= 250µA, VGS = 0V (Figure 10) 100 - - V

= VGS, ID = 250µA 2.0 - 4.0 V
VDS = Rated BV
VDS = 0.8 x Rated BV

> I

D(ON)

, VGS = 0V - - 25 µA

DSS

, VGS = 0V, TJ = 150oC - - 250 µA

DSS

x r

DS(ON)MAX

, VGS = 10V 28 - - A

VGS = ±20V - - ±100 nA

= 17A, VGS = 10V (Figures 8, 9) - 0.07 0.077 Ω

VDS > I

= 50V, I
(Figures 17, 18) MOSFET Switching Times are
Essentially Independent of Operating Temperature

D(ON)

x r

DS(ON)MAX

≈ 28A, R

D

, ID = 17A (Figure 12) 8.7 13 - S

= 9.1Ω, RL = 1.7Ω

G

-1623ns

- 27 110 ns

-3860ns

-1475ns

= 10V, ID = 28A, VDS = 0.8 x Rated BV
I

= 1.5mA (Figures 14, 19, 20) Gate Charge is

g(REF)

DSS

Essentially Independent of Operating Temperature

-3859nC

-9-nC

-21-nC

VDS = 25V, VGS = 0V, f = 1MHz (Figure 11) - 1275 - pF

- 550 - pF

- 160 - pF

Measured between the
Contact Screw on the
Flange that is Closer to
Source and Gate Pins and
the Center of Die

Measured from the Source
Lead, 6mm (0.25in) from
the Flange and the Source
Bonding Pad

Modified MOSFET
Symbol Showing the
Internal Device
Inductances

D

L

D

G

L

S

S

- 5.0 - nH

- 12.5 - nH

- - 1.0oC/W

Free Air Operation - - 30

o

C/W

2

IRF140

SourceTo Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Continuous Source to Drain Current I
Pulse Source to Drain Current

I

SDM

(Note 3)

Drain to Source Diode Voltage (Note 2) V
Reverse Recovery Time t
Reverse Recovery Charge Q

NOTES:

2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.

3. Repetitive Rating: Pulse width limited by Max junction temperature. See Transient Thermal Impedance Curve (Figure 3).

4. VDD = 25V, starting TJ = 25oC, L = 190µH, RG = 25Ω, peak IAS= 28A (Figures 15, 16).

Modified MOSFET

SD

Symbol Showing the
Integral Reverse P-N

D

- - 28 A

- - 110 A

Junction Rectifier

G

S

TJ = 25oC, ISD = 28A, VGS = 0V (Figure 13) - - 2.5 V

SD

TJ = 25oC, ISD = 28A, dISD/dt = 100A/µs 70 150 300 ns

rr

TJ = 25oC, ISD = 28A, dISD/dt = 100A/µs 0.44 0.9 1.9 µC

RR

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

25 50 75 100

0

0

T

C

, CASE TEMPERATURE (oC)

125

150

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

2
1

0.5

0.2

C/W)

o

, TRANSIENT THERMAL

IMPEDANCE (

θJC

Z

0.1

0.1

0.05

0.02

0.01

-2

10

10

-3

-5

10

SINGLE PULSE

-4

10

-3

10

, RECTANGULAR PULSE DURATION (S)

t

1

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

175

30

24

18

12

, DRAIN CURRENT (A)

D

I

6

0

25 50 75 100 125 150 175

, CASE TEMPERATURE (oC)

T

C

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

P

DM

t

1

t

2

NOTES:
DUTY FACTOR: D = t1/t
PEAK TJ = PDM x Z

-2

10

0.1 1 10

θJC

2

+ T

C

3

IRF140

Typical Performance Curves

1000

OPERATION IN
THIS AREA LIMITED

BY r

DS(ON)

100

10

, DRAIN CURRENT (A)

D

I

TC = 25oC
T

= MAX RATED

J

SINGLE PULSE

1

110

V

, DRAIN TO SOURCE VOLTAGE (V)

DS

(Continued)

10µs
100µs

1ms

10ms

DC

100 1000

50

40

30

20

, DRAIN CURRENT (A)

D

I

10

0

V

DS

VGS = 8V
VGS = 10V

, DRAIN TO SOURCE VOLTAGE (V)

80µs PULSE TEST

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS

2

50

PULSE DURATION = 80µs

40

30

VGS = 8V

VGS = 10V

VGS = 7V

VGS = 6V

10

≥ 50V

V

DS

80µs PULSE TEST

10

VGS = 7V

VGS = 6V

VGS = 5V

VGS = 4V

50403020100

20

, DRAIN CURRENT (A)

D

I

10

0

V

DS

VGS = 5V

VGS = 4V

5.04.03.02.01.00

, DRAIN TO SOURCE VOLTAGE (V)

1

TJ = 175oC

, SOURCE TO DRAIN CURRENT (A)

SD

I

0.1
0246810

V

GS

TJ = 25oC

, GATE TO SOURCE VOLTAGE (V)

FIGURE 6. SATURATION CHARACTERISTICS FIGURE 7. TRANSFER CHARACTERISTICS

1.0

80µs PULSE TEST

0.8

0.6
VGS = 10V

0.4

, DRAIN TO SOURCE

ON RESISTANCE

DS(ON)

0.2

r

0

0 25 50 75 100 125

, DRAIN CURRENT (A)

I

D

VGS = 20V

3.0

2.4

1.8

1.2

ON RESISTANCE

0.6

NORMALIZED DRAIN TO SOURCE

0

ID = 17A

= 10V

V

GS

0 40 80 120 160-40

TJ, JUNCTION TEMPERATURE (oC)

FIGURE 8. DRAIN TOSOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT

4

FIGURE 9. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

IRF140

Typical Performance Curves

1.25
ID = 250µA

1.15

1.05

0.95

BREAKDOWN VOLTAGE

0.85

NORMALIZED DRAIN TO SOURCE

0.75

0 40 80 120 160-40

, JUNCTION TEMPERATURE (oC)

T

J

(Continued)

FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN

VOLTAGE vs JUNCTION TEMPERATURE

20

VDS≥ 50V
80µs PULSE TEST

16

12

8

, TRANSCONDUCTANCE (S)

4

fs

g

0

01020304050

I

, DRAIN CURRENT (A)

D

TJ = 175oC

TJ = 25oC

3000

2400

1800

1200

C, CAPACITANCE (pF)

600

0

1

VDS, DRAIN TO SOURCE VOLTAGE (V)

10

C

ISS

C

OSS

C

RSS

VGS = 0V, f = 1MHz
C

= CGS + C

C
C

ISS
RSS

OSS

= C

≈ CDS + C

GD

GD

GD

10

FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

3

10

2

10

TJ = 175oC

10

TJ = 25oC

, SOURCE TO DRAIN CURRENT (A)

SD

I

1

0 0.6 1.2 1.8 2.4 3.0

V

, SOURCE TO DRAIN VOLTAGE (V)

SD

2

FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE

20

ID = 28A

16

12

8

4

, GATE TO SOURCE VOLTAGE (V)

GS

V

0

0 1224364860

Q

, TOTAL GATE CHARGE (nC)

g(TOT)

VDS = 80V
V

= 50V

DS

V

= 20V

DS

FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE

5

IRF140

Test Circuits and Waveforms

V

DS

t

I

AS

VARY t

TO OBTAIN

P

REQUIRED PEAK I

V

GS

AS

L

R

G

+

V

DD

-

DUT

0V

P

I

AS

0

t

0.01Ω

FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS

BV

DSS

P

t

AV

V

DS

V

DD

R

G

V

GS

FIGURE 17. SWITCHING TIME TEST CIRCUIT

CURRENT

REGULATOR

12V

BATTERY

0.2µF

50kΩ

0.3µF

t

ON

t

d(ON)

t

V

R

L

+

V

DD

-

DUT

DS

0

V

GS

0

90%

10%

r

10%

50%

PULSE WIDTH

t

d(OFF)

90%

t

OFF

50%

t

f

90%

10%

FIGURE 18. RESISTIVE SWITCHING WAVEFORMS

V

DS

(ISOLATED
SUPPLY)

SAME TYPE
AS DUT

V

DD

Q

g(TOT)

Q

gd

Q

gs

V

GS

G

I

0

g(REF)

IG CURRENT

SAMPLING

RESISTOR RESISTOR

FIGURE 19. GATE CHARGE TEST CIRCUIT

6

D

DUT

S

CURRENT

I

D

SAMPLING

V

DS

0

I

V

DS

g(REF)

0

FIGURE 20. GATE CHARGE WAVEFORMS

IRF140

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