Page 1
PD -94335
IRF1407S
Benefits
IRF1407L
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
Description
Advanced HEXFET
®
Power MOSFETs from International
G
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in any
existing surface mount package. The D
high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface
mount application.
The through-hole version (IRF1407L) is available for lowprofile applications.
2
Pak is suitable for
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10VX 100V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10VX 70V A
I
DM
PD @TA = 25°C Power Dissipation 3.8 W
PD @TC = 25°C Power Dissipation 200 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt SX 4.6 V/ns
T
J
T
STG
Pulsed Drain Current QX 520
Linear Derating Factor 1.3 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche EnergyRX 390 mJ
Avalanche CurrentQ See Fig.12a, 12b, 15, 16 A
Repetitive Avalanche EnergyW mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θJA
**When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer
to application note #AN-994.
Junction-to-Case ––– 0.75 °C/W
Junction-to-Ambient(PCB Mounted,steady-state)** ––– 40
HEXFET® Power MOSFET
D
V
= 75V
DSS
R
DS(on)
= 0.0078Ω
ID = 100AV
S
D2Pak
IRF1407S
TO-262
IRF1407L
°C
www.irf.com 1
10/05/01
Page 2
IRF1407S/IRF1407L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
C
eff. Effective Output Capacitance U ––– 1100 ––– VGS = 0V, VDS = 0V to 60V
oss
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Q Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
R Starting T
RG = 25Ω, I
S I
SD
TJ ≤ 175°C
T Pulse width ≤ 400µs; duty cycle ≤ 2%.
2 www.irf.com
Drain-to-Source Breakdown Voltage 75 ––– ––– VVGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.09 ––– V/°C Reference to 25°C, ID = 1mA X
J
Static Drain-to-Source On-Resistance ––– ––– 0.0078 Ω VGS = 10V, ID = 78A T
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = 10V, ID = 250µA
Forward Transconductance 74 ––– ––– SVDS = 25V, ID = 78A X
Drain-to-Source Leakage Current
––– ––– 20
––– ––– 250 VDS = 60V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 200 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -200
VDS = 75V, VGS = 0V
µA
nA
VGS = -20V
Total Gate Charge ––– 160 250 ID = 78A
Gate-to-Source Charge ––– 35 52 nC VDS = 60V
Gate-to-Drain ("Miller") Charge ––– 54 81 VGS = 10VTX
Turn-On Delay Time ––– 11 ––– VDD = 38V
Rise Time ––– 150 ––– ID = 78A
Turn-Off Delay Time ––– 150 ––– RG = 2.5Ω
ns
Fall Time ––– 140 ––– VGS = 10V TX
4.5
Internal Drain Inductance
Internal Source Inductance ––– –––
––– –––
7.5
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 5600 ––– VGS = 0V
Output Capacitance ––– 890 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 190 ––– ƒ = 1.0KHz, See Fig. 5 X
Output Capacitance ––– 5800 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0KHz
Output Capacitance ––– 560 ––– VGS = 0V, VDS = 60V, ƒ = 1.0KHz
Parameter Min. Typ. Max. Units Conditions
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode) Q
––– –––
––– –––
100V
520
showing the
A
p-n junction diode.
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 78A, VGS = 0VT
Reverse Recovery Time ––– 110 170 ns TJ = 25°C, IF = 78A
Reverse RecoveryCharge ––– 390 5 90 nC di/dt = 100A/µs
TX
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
U C
eff. is a fixed capacitance that gives the same charging time
oss
= 25°C, L = 0.13mH
J
= 78A. (See Figure 12).
AS
≤ 78A, di/dt ≤ 320A/µs, V
DD
≤ V
(BR)DSS
as C
V Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
W Limited by T
,
oss
while V
is rising from 0 to 80% V
DS
, see Fig.12a, 12b, 15, 16 for typical repetitive
Jmax
DSS
.
avalanche performance.
X Uses IRF1407 data and test conditions.
G
G
D
S
D
S
Page 3
IRF1407S/IRF1407L
(
)
1000
100
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
4.5V
10
, Drain-to-Source Current (A)
D
I
20µs PULSE WIDTH
Tj = 25°C
1
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
1000.00
1000
100
10
, Drain-to-Source Current (A)
D
I
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
4.5V
20µs PULSE WIDTH
Tj = 175°C
1
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
3.0
130A
I =
D
)
(Α
100.00
, Drain-to-Source Current
D
I
10.00
3.0 5.0 7.0 9.0 11.0 13.0
Fig 3. Typical Transfer Characteristics
TJ = 25°C
TJ = 175°C
V
= 15V
DS
20µs PULSE WIDTH
VGS, Gate-to-Source Voltage (V)
2.5
2.0
1.5
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature
J
Fig 4. Normalized On-Resistance
V =
10V
GS
°
C
Vs. Temperature
www.irf.com 3
Page 4
IRF1407S/IRF1407L
)
100000
10000
V
= 0V, f = 1 MHZ
GS
C
= C
iss
gs
C
= C
rss
gd
C
= C
ds
+ C
oss
+ Cgd, C
gd
Ciss
1000
C, Capacitance(pF)
Coss
Crss
100
1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000.00
SHORTED
ds
15
D
I =
78A
12
9
6
3
GS
V , Gate-to-Source Voltage (V)
0
0 40 80 120 160 200
Q , Total Gate Charge (nC
G
V = 60V
DS
V = 37V
DS
V = 15V
DS
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
10000
OPERATION IN THIS AREA
100.00
TJ = 175°C
10.00
TJ = 25°C
, Reverse Drain Current (A)
1.00
SD
I
0.10
0.0 1.0 2.0 3.0
VSD, Source-toDrain Voltage (V)
Fig 7. Typical Source-Drain Diode
V
GS
= 0V
1000
100
10
, Drain-to-Source Current (A)
D
I
Tc = 25°C
Tj = 175°C
Single Pulse
1
1 10 100 1000
Fig 8. Maximum Safe Operating Area
LIMITED BY RDS(on)
V
, Drain-toSource Voltage (V)
DS
100µsec
1msec
10msec
Forward Voltage
4 www.irf.com
Page 5
IRF1407S/IRF1407L
(
)
120
LIMITED BY PACKAGE
100
80
60
40
D
I , Drain Current (A)
20
0
25 50 75 100 125 150 175
T , Case Temperature
C
C
°
Fig 9. Maximum Drain Current Vs.
Case Temperature
1
R
V
DS
V
GS
R
G
D
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)tr
t
d(off)tf
Fig 10b. Switching Time Waveforms
+
V
DD
-
D = 0.50
thJC
0.20
0.1
0.10
P
0.05
Thermal Response (Z )
0.02
0.01
0.01
0.00001 0.0001 0.001 0.01 0.1 1
SINGLE PULSE
(THERMAL RESPONSE)
t , Rectangular Pulse Duration (sec)
1
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
J DM thJC C
DM
t
1 2
1
t
2
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com 5
Page 6
IRF1407S/IRF1407L
A
(
)
15V
DRIVER
+
-
V
R
20V
V
DS
G
L
D.U.T
I
AS
0.01
t
p
Ω
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
I
AS
Fig 12b. Unclamped Inductive Waveforms
Q
G
10 V
Q
GS
Q
GD
DD
650
TOP
520
390
260
130
AS
E , Single Pulse Avalanche Energy (mJ)
0
25 50 75 100 125 150 175
Starting T , Junction Temperature
J
BOTTOM
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
3.5
C
I
D
32A
55A
78A
°
V
G
3.0
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
2.5
ID = 250µA
Gate threshold Voltage (V)
50KΩ
.2µF
12V
V
GS
.3µF
D.U.T.
3mA
I
G
Current Sampling Resistors
+
V
DS
-
I
D
Fig 13b. Gate Charge Test Circuit
2.0
GS(th)
V
1.5
-75 -50 -25 0 25 50 75 100 125 150 175 200
TJ , Temperature ( °C )
Fig 14. Threshold Voltage Vs. Temperature
6 www.irf.com
Page 7
1000
Duty Cycle = Single Pulse
100
0.01
0.05
IRF1407S/IRF1407L
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming ∆Tj = 25°C due to
avalanche losses
10
0.10
Avalanche Current (A)
1
1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current Vs.Pulsewidth
400
TOP Single Pulse
BOTTOM 10% Duty Cycle
ID = 78A
300
200
, Avalanche Energy (mJ)
100
AR
E
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T
. This is validated for
jmax
every part type.
2. Safe operation in Avalanche is allowed as long asT
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. P
= Average power dissipation per single
D (ave)
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. I
= Allowable avalanche current.
av
7. ∆T = Allowable rise in junction temperature, not to exceed
T
(assumed as 25°C in Figure 15, 16).
jmax
t
Average time in avalanche.
av =
D = Duty cycle in avalanche = t
Z
(D, tav) = Transient thermal resistance, see figure 11)
thJC
av
·f
jmax
is
D (ave)·tav
∆∆
∆T/ Z
∆∆
thJC
Fig 16. Maximum Avalanche Energy
Vs. Temperature
P
= 1/2 ( 1.3·BV·Iav) =
D (ave)
I
av =
E
AS (AR)
∆∆
2
∆T/ [1.3·BV·Zth]
∆∆
= P
www.irf.com 7
Page 8
IRF1407S/IRF1407L
Peak Diode Recovery dv/dt Test Circuit
D.U.T*
+
S
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
+
R
-
T
-
+
Q
R
G
V
GS
• dv/dt controlled by R
• ISD controlled by Duty Factor "D"
G
• D.U.T. - Device Under Test
+
V
DD
-
* Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
D =
P.W.
Period
VGS=10V
[ ] ***
D.U.T. ISDWaveform
Reverse
Recovery
Current
Re-Applied
Voltage
D.U.T. VDSWaveform
Inductor Curent
*** V
= 5.0V for Logic Level and 3V Drive Devices
GS
Fig 17. For N-channel HEXFET
Body Diode Forward
Current
di/dt
Diode Recovery
dv/dt
Body Diode Forward Drop
Ripple ≤ 5%
®
power MOSFETs
V
DD
[ ]
I
[ ]
SD
8 www.irf.com
Page 9
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
IRF1407S/IRF1407L
10.54 (.415)
1.40 (.055)
MA X.
1.78 (.070)
1.27 (.050)
1.40 (.055)
3X
1.14 (.045)
5.08 (.200)
NOTE S:
1 DIMENSIONS AFTER SOLDER DIP .
2 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
3 CONTROLLING DIMENSION : INCH.
4 HEATSINK & LEAD DIMENSIONS DO NOT INCLUDE BURRS.
2
Pak Part Marking Information
D
10.29 (.405)
- A 2
1 3
15.49 (.610)
14.73 (.580)
0.93 (.037)
3X
0.69 (.027)
0.25 (.0 1 0) M B A M
4.69 (.185)
4.20 (.165)
5.28 (.208)
4.78 (.188)
0.55 (.022)
0.46 (.018)
- B -
1.32 (.052)
1.22 (.048)
2.79 (.110)
2.29 (.090)
1.39 (.055)
1.14 (.045)
LEAD ASSIGNM E N TS
1 - G A TE
2 - D RA IN
3 - SOURCE
10.16 (.400)
REF .
6.47 (.255)
6.18 (.243)
2.61 (.103)
2.32 (.091)
8.89 (.350)
REF .
MINIMUM RECOMMENDED FOOTPRINT
11.43 (.450)
8.89 (.350)
17.78 (.700)
3.81 (.150)
2.08 (.082)
2X
2.54 (.100)
2X
THIS IS AN IRF530S WITH
LOT CODE 8024
ASSEMBLED O N WW 02, 2000
I N TH E ASSEMBLY LINE "L"
INTERNATIONA L
REC TIFIER
LOGO
F530S
PART NUMBER
DA TE C O D E
AS S E MBLY
LOT C ODE
YEAR 0 = 2000
WEE K 02
LINE L
www.irf.com 9
Page 10
IRF1407S/IRF1407L
EX AMPLE: THIS IS AN IRL310 3L
LOT CODE 1789
ASSEMBLY
PART NUMBER
DA TE CODE
WEE K 19
LINE C
LOT C ODE
YEA R 7 = 1997
ASSEMBLED O N WW 1 9, 19 97
I N TH E ASSEMBL Y LIN E "C"
LOGO
REC TIFIER
INTERNATIONA L
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Par t Mar king Information
10 www.irf.com
Page 11
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
4.10 (.161)
3.90 (.153)
FEED DIRECTION
TRL
FEED DIRECTION
1.85 (.073)
1.65 (.065)
10.90 (.429)
10.70 (.421)
1.60 (.063)
1.50 (.059)
IRF1407S/IRF1407L
1.60 (.063)
11.60 (.457)
11.40 (.449)
16.10 (.634)
15.90 (.626)
1.50 (.059)
1.75 (.069)
1.25 (.049)
15.42 (.609)
15.22 (.601)
0.368 (.0145)
0.342 (.0135)
24.30 (.957)
23.90 (.941)
4.72 (.136)
4.52 (.178)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
MAX.
NOTES :
1. COMFORM S TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
27.40 (1.079)
23.90 (.941)
4
26.40 (1.039)
24.40 (.961)
3
60.00 (2.362)
MIN.
30.40 (1.197)
MA X.
4
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.10/01
www.irf.com 11
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