Datasheet IRF1407 Datasheet (International Rectifier)

PD - 93907

AUTOMOTIVE MOSFET

Typical Applications

● Integrated Starter Alternator

● 42 Volts Automotive Electrical Systems

IRF1407

HEXFET® Power MOSFET

D

V

= 75V

DSS

Benefits

● Advanced Process Technology

● Ultra Low On-Resistance

● Dynamic dv/dt Rating

● 175°C Operating Temperature

● Fast Switching

● Repetitive Avalanche Allowed up to Tjmax

G

S

R

DS(on)

ID = 130AV

= 0.0078Ω

Description

Specifically designed for Automotive applications, this Stripe Planar
design of HEXFET
techniques to achieve extremely low on-resistance per silicon area.
Additional features of this HEXFET power MOSFET are a 175°C junction
operating temperature, fast switching speed and improved repetitive
avalanche rating. These benefits combine to make this design an extremely
efficient and reliable device for use in Automotive applications and a wide
variety of other applications.

®

Power MOSFETs utilizes the lastest processing

TO-220AB

Absolute Maximum Ratings

Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 130V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 92V A
I

DM

PD @TC = 25°C Power Dissipation 330 W

V

GS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt S 4.6 V/ns
T

J

T

STG

Pulsed Drain Current Q 520

Linear Derating Factor 2.2 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche EnergyR 390 mJ
Avalanche CurrentQ See Fig.12a, 12b, 15, 16 A
Repetitive Avalanche EnergyW mJ

Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting Torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)

°C

Thermal Resistance

Parameter Typ. Max. Units

R

θJC

R

θCS

R

θJA

Junction-to-Case ––– 0.45
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
Junction-to-Ambient ––– 62

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10/11/01

IRF1407

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

D

L

S

C

iss

C

oss

C

rss

C

oss

C

oss

C

eff. Effective Output Capacitance U ––– 1100 ––– VGS = 0V, VDS = 0V to 60V

oss

Source-Drain Ratings and Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

Notes:

Q Repetitive rating; pulse width limited by

max. junction temperature. (See fig. 11).

R Starting T

RG = 25Ω, I

S I

SD

TJ ≤ 175°C

T Pulse width ≤ 400µs; duty cycle ≤ 2%.

Drain-to-Source Breakdown Voltage 75 ––– ––– VVGS = 0V, ID = 250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.09 ––– V/°C Reference to 25°C, ID = 1mA

J

Static Drain-to-Source On-Resistance ––– ––– 0.0078 Ω VGS = 10V, ID = 78A T
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = 10V, ID = 250µA
Forward Transconductance 74 ––– ––– SVDS = 25V, ID = 78A

Drain-to-Source Leakage Current

––– ––– 20
––– ––– 250 VDS = 60V, VGS = 0V, TJ = 150°C

Gate-to-Source Forward Leakage ––– ––– 200 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -200

VDS = 75V, VGS = 0V

µA

nA

VGS = -20V
Total Gate Charge ––– 160 250 ID = 78A
Gate-to-Source Charge ––– 35 52 nC VDS = 60V
Gate-to-Drain ("Miller") Charge ––– 54 81 VGS = 10VT
Turn-On Delay Time ––– 11 ––– VDD = 38V
Rise Time ––– 150 ––– ID = 78A
Turn-Off Delay Time ––– 150 ––– RG = 2.5Ω

ns

Fall Time ––– 140 ––– VGS = 10V T

4.5

Internal Drain Inductance

Internal Source Inductance ––– –––

––– –––

7.5

Between lead,

6mm (0.25in.)

nH

from package

and center of die contact
Input Capacitance ––– 5600 ––– VGS = 0V
Output Capacitance ––– 890 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 190 ––– ƒ = 1.0KHz, See Fig. 5
Output Capacitance ––– 5800 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0KHz
Output Capacitance ––– 560 ––– VGS = 0V, VDS = 60V, ƒ = 1.0KHz

Parameter Min. Typ. Max. Units Conditions
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode) Q

––– –––

––– –––

130V

520

showing the

A

p-n junction diode.
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 78A, VGS = 0VT
Reverse Recovery Time ––– 110 170 ns TJ = 25°C, IF = 78A
Reverse RecoveryCharge ––– 390 5 90 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

U C

eff. is a fixed capacitance that gives the same charging time

oss

= 25°C, L = 0.13mH

J

= 78A. (See Figure 12).

AS

≤ 78A, di/dt ≤ 320A/µs, V

DD

≤ V

(BR)DSS

as C
VCalculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.

,

WLimited by T

oss

while V

is rising from 0 to 80% V

DS

, see Fig.12a, 12b, 15, 16 for typical repetitive

Jmax

avalanche performance.



T

DSS

D

G

S

D

G

S

.

2 www.irf.com

IRF1407

(

)

1000

100

VGS
TOP 15V
10V

8.0V

7.0V

6.0V

5.5V

5.0V
BOTTOM 4.5V

4.5V

10

, Drain-to-Source Current (A)

D

I

20µs PULSE WIDTH
Tj = 25°C

1

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

1000.00

1000

100

10

, Drain-to-Source Current (A)

D

I

VGS
TOP 15V
10V

8.0V

7.0V

6.0V

5.5V

5.0V
BOTTOM 4.5V

4.5V

20µs PULSE WIDTH
Tj = 175°C

1

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

3.0

130A

I =



D

)

(Α

100.00

, Drain-to-Source Current

D

I

10.00

3.0 5.0 7.0 9.0 11.0 13.0

Fig 3. Typical Transfer Characteristics

TJ = 25°C

TJ = 175°C

V

= 15V

DS

20µs PULSE WIDTH

VGS, Gate-to-Source Voltage (V)

2.5

2.0

1.5

(Normalized)

1.0

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

T , Junction Temperature

J

Fig 4. Normalized On-Resistance

V =

10V



GS

°

C

vs. Temperature

www.irf.com 3

IRF1407

)

100000

10000

V

= 0V, f = 1 MHZ

GS

C

= C

iss

gs

C

= C

rss

gd

C

= C

ds

+ C

oss

+ Cgd, C

gd

Ciss

1000

C, Capacitance(pF)

Coss

Crss

100

1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance vs.

Drain-to-Source Voltage

1000.00

SHORTED

ds

15

D

I =

78A



12

9

6

3

GS

V , Gate-to-Source Voltage (V)

0

0 40 80 120 160 200

Q , Total Gate Charge (nC

G

V = 60V

DS

V = 37V

DS



V = 15V

DS

Fig 6. Typical Gate Charge vs.

Gate-to-Source Voltage

10000

OPERATION IN THIS AREA

100.00

TJ = 175°C

10.00
TJ = 25°C

, Reverse Drain Current (A)

1.00

SD

I

0.10

0.0 1.0 2.0 3.0
VSD, Source-toDrain Voltage (V)

Fig 7. Typical Source-Drain Diode

V

GS

= 0V

1000

100

10

, Drain-to-Source Current (A)

D

I

Tc = 25°C
Tj = 175°C
Single Pulse

1

1 10 100 1000

Fig 8. Maximum Safe Operating Area

LIMITED BY RDS(on)

V

, Drain-toSource Voltage (V)

DS

100µsec

1msec

10msec

Forward Voltage

4 www.irf.com

IRF1407

140



LIMITED BY PACKAGE

120

100

80

60

D

40

I , Drain Current (A)

20

0

25 50 75 100 125 150 175

T , Case Temperature ( C)

C

°

Fig 9. Maximum Drain Current vs.

Case Temperature

1

R

V

DS

V

GS

R

G

D

D.U.T.

10V

Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

V

DS

90%

10%
V

GS

t

d(on)tr

t

d(off)tf

Fig 10b. Switching Time Waveforms

+

V

DD

-

D = 0.50

thJC

Thermal Response (Z )

0.001

0.20

0.1

0.10

0.05

0.02

0.01

0.01

0.00001 0.0001 0.001 0.01 0.1 1

SINGLE PULSE

(THERMAL RESPONSE)



t , Rectangular Pulse Duration (sec)

1

P

DM

t



Notes:

1. Duty factor D = t / t



2. Peak T = P x Z + T

1 2

J DM thJC C

1

t

2

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

www.irf.com 5

IRF1407

A

(

)

15V

DRIVER

+

-

V

R

20V

V

DS

G

L

D.U.T

I

AS

0.01

t

p

Ω

Fig 12a. Unclamped Inductive Test Circuit

V

(BR)DSS

t

p

I

AS

Fig 12b. Unclamped Inductive Waveforms

Q

G

10 V

Q

GS

Q

GD

DD

650

TOP

520

390

260

130

AS

E , Single Pulse Avalanche Energy (mJ)

0

25 50 75 100 125 150 175

Starting T , Junction Temperature

J



BOTTOM

Fig 12c. Maximum Avalanche Energy

vs. Drain Current

3.5

C

I

D

32A
55A
78A

°

V

G

3.0

Charge

Fig 13a. Basic Gate Charge Waveform

Current Regulator

Same Type as D.U.T.

2.5

ID = 250µA

Gate threshold Voltage (V)

50KΩ

.2µF

12V

V

GS

.3µF

D.U.T.

3mA

I

G

Current Sampling Resistors

+

V

-

I

D

Fig 13b. Gate Charge Test Circuit

DS

2.0

GS(th)

V

1.5

-75 -50 -25 0 25 50 75 100 125 150 175 200

TJ , Temperature ( °C )

Fig 14. Threshold Voltage vs. Temperature

6 www.irf.com

1000

Duty Cycle = Single Pulse

100

0.01

0.05

IRF1407

Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming ∆Tj = 25°C due to
avalanche losses

10

0.10

Avalanche Current (A)

1

1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01

tav (sec)

Fig 15. Typical Avalanche Current vs.Pulsewidth

400

TOP Single Pulse
BOTTOM 10% Duty Cycle
ID = 78A

300

200

, Avalanche Energy (mJ)

100

AR

E

0

25 50 75 100 125 150 175

Starting TJ , Junction Temperature (°C)

Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)

1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a

temperature far in excess of T

. This is validated for

jmax

every part type.

2. Safe operation in Avalanche is allowed as long asT
not exceeded.

3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.

4. P

= Average power dissipation per single

D (ave)

avalanche pulse.

5. BV = Rated breakdown voltage (1.3 factor accounts for

voltage increase during avalanche).

6. I

= Allowable avalanche current.

av

7. ∆T = Allowable rise in junction temperature, not to exceed

T

(assumed as 25°C in Figure 15, 16).

jmax

t

Average time in avalanche.

av =

D = Duty cycle in avalanche = t
Z

(D, tav) = Transient thermal resistance, see figure 11)

thJC

av

·f

jmax

is

D (ave)·tav

∆∆

∆T/ Z

∆∆

thJC

Fig 16. Maximum Avalanche Energy

vs. Temperature

P

= 1/2 ( 1.3·BV·Iav) =

D (ave)

I

av =

E

AS (AR)

∆∆

2

∆T/ [1.3·BV·Zth]

∆∆

= P

www.irf.com 7

IRF1407

Peak Diode Recovery dv/dt Test Circuit

D.U.T*

+

S

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance
Current Transformer

-

+

R

-

T

-

+

Q

R

G

V

GS

• dv/dt controlled by R

• ISD controlled by Duty Factor "D"

G

• D.U.T. - Device Under Test

+

V

DD

-

* Reverse Polarity of D.U.T for P-Channel

Driver Gate Drive

P.W.

Period

D =

P.W.

Period

VGS=10V

[ ] ***

D.U.T. ISDWaveform

Reverse
Recovery
Current

Re-Applied
Voltage

D.U.T. VDSWaveform

Inductor Curent

*** V

= 5.0V for Logic Level and 3V Drive Devices

GS

Fig 17. For N-channel HEXFET

Body Diode Forward

Current

di/dt

Diode Recovery

dv/dt

Body Diode Forward Drop

Ripple ≤ 5%

®

power MOSFETs

V

DD

[ ]

I

[ ]

SD

8 www.irf.com

TO-220AB Package Outline

LO T CO D E 1789
A SSEMBLED ON WW 19, 1997
IN THE ASSEMBLY LINE "C"

INTERNATIONAL

REC TIFIER

LOGO

ASSEMBLY
LOT C OD E

PART NUMBER

DA TE CODE
YEA R 7 = 19 97
WEE K 19
LINE C

EX AMPLE: TH IS I S AN I R F1010

Dimensions are shown in millimeters (inches)

2.87 (.113)

2.62 (.103)

15.24 (.600)

14.84 (.584)

14.09 (.555)

13.47 (.530)

10.54 (.415)

10.29 (.405)

1 2 3

4

6.47 (.255)

6.10 (.240)

1.15 (.045)
MIN

4.06 (.160)

3.55 (.140)

3.78 (.149)

3.54 (.139)

- A -

4.69 (.185)

4.20 (.165)

- B -

1.32 (.052)

1.22 (.048)

IRF1407

LEAD ASSIGNMENTS
1 - GATE
2 - DRAIN
3 - SOUR C E
4 - DRAIN

0.93 (.037)

3X

1.40 (.055)

3X

1.15 (.045)

2.54 (.100)

NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JED EC OUTLINE TO-220AB.
2 CONTROLLIN G DIMENS ION : IN C H 4 HEATSINK & LE AD M E AS UREM EN T S DO NOT INCLUDE BURRS.

2X

0.69 (.027)

0.36 (.014 ) M B A M

0.55 (.022)

3X

0.46 (.018)

2.92 (.115)

2.64 (.104)

TO-220AB Part Marking Information

Data and specifications subject to change without notice.

This product has been designed and qualified for the Automotive [Q101] market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: [phone]

www.irf.com 9

TAC Fax: [phone]

Visit us at www.irf.com for sales contact information.10/01