Datasheet IRF1404ZSPBF Datasheet

Features

Absolute Maximum Ratings

D

DM

Pulsed Drain Current

c

GS

Single Pulse Avalanche Energy

d

Single Pulse Avalanche Energy Tested Value

h

Avalanche Current

c

Repetitive Avalanche Energy

g

J

STG

Mounting Torque, 6-32 or M3 sc rew

i

Thermal Resistance

θ

300 (1.6mm from case )

10 lbfyin (1.1N

y

m)

1.3

l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free

Description

This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

G

TO-220AB

IRF1404ZPbF

PD - 96040C

IRF1404ZPbF

IRF1404ZSPbF

IRF1404ZLPbF

HEXFET® Power MOSFET

V

D

(BR)DSS

typ. 2.7m

R

DS(on)

max. 3.7m

I

D (Silicon Limited)

I

S

D (Package Limi ted)

D2Pak

IRF1404ZSPbF

IRF1404ZLPbF

40V

180A

120A

TO-262

Ω

l

Parameter Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V

ID @ TC = 100°C Continuous Drain Current, VGS @ 10V A

@ TC = 25°C Continuous Drain Current, VGS @ 10V

I I PD @TC = 25°C Power Dissipation W

Linear Derating Factor W/°C

V E

AS (Thermally limited)

(Tested )

E

AS

I

AR

E

AR

T T

Gate-to-Sour ce Voltage V

Operating Junction and Storage Temperature Range °C

Soldering Temperature, for 10 seconds

(Silicon Limited)

(P ackage Li mited)

See Fig.12a, 12b, 15, 16

Max.

l

180

l

120

l

120

710 200

± 20

330 480

-55 to + 175

mJ

A

mJ

Parameter Typ. Max. Units

k

R

JC

R

CS

θ

R

JA

θ

R

JA

Junction-to-Case –––

Case-to-Sink, Flat Greased Surface

Junction- to- Ambient

Junction-to-Ambient (PCB Mount)

i

j

0.50 –––

––– 62

––– 40

0.75

°C/W

www.irf.com 1

06/19/12

IRF1404Z/S/LPbF

Electrical Characteristics @ T

= 25°C (unless otherwise specified)

m

Ω

Source-Drain Ratings and Characteristics

S

120

l

SM

(Body Diode)

c

SD

rr

on

showing the

p-n junction diode.

J

Parameter Min. Typ. Max. Units

V

(BR)DSS

Δ

V

(BR)DSS

R

DS(on)

V

GS(th )

gfs Forwar d Trans conductance 170 ––– ––– V I

DSS

I

GS S

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

D

L

S

C

iss

C

oss

C

rss

C

oss

C

oss

C

eff. Effective Output Capacitance ––– 1350 –––

oss

Drain-to-Source Breakdown Voltage 40 ––– ––– V

/ΔTJ Break down Voltage Temp. Coefficient ––– 0.033 ––– V/°C

Static Drain-to-Sourc e O n-Res istanc e ––– 2.7 3.7 Gate Threshold Voltage 2.0 ––– 4.0 V

Drain-to-Source Leakage Current ––– ––– 20 μA

––– ––– 250 Gate-to-Sourc e F orward Leakage ––– ––– 200 nA

Gate-to-Sourc e Revers e Leak age ––– ––– -200 Total Gate Charge ––– 100 150 Gate-to-Sourc e C harge ––– 31 ––– nC Gate-to-Drain ("Miller") Charge ––– 42 –––

Turn-On Delay Time ––– 18 ––– Rise Time ––– 110 ––– Turn-Off Delay Time ––– 36 ––– ns

Fall Time ––– 58 ––– Inter nal Dr ain Inductanc e ––– 4.5 ––– Between lead,

Internal Source Inductance ––– 7.5 ––– from package

Input Capac itance ––– 4340 ––– Output Capacitance ––– 1030 ––– Reverse T ransfer Capac itanc e ––– 550 ––– pF

Output Capacitance ––– 3300 ––– Output Capacitance ––– 920 –––

VGS = 0V, ID = 250μA

Reference to 25°C, I V

= 10V, ID = 75A

GS

= VGS, ID = 150μA

V

DS

VDS = 25V, ID = 75A** V

= 40V, VGS = 0V

DS

V

= 40V, VGS = 0V, TJ = 125°C

DS

VGS = 20V

V

= -20V

GS

I

= 75A**

D

V

= 32V

DS

VGS = 10V

e

VDD = 20V I

= 75A**

D

Ω

R

= 3.0

G

VGS = 10V

e

nH 6mm (0.25in.)

and center of die contact VGS = 0V

V

= 25V

DS

ƒ = 1.0MHz

V

= 0V, VDS = 1.0V, ƒ = 1.0MHz

GS

V

= 0V, VDS = 32V, ƒ = 1.0MHz

GS

V

= 0V, VDS = 0V to 32V

GS

Conditions

= 1mA

D

**

e

f

Parameter Min. Typ. Max. Units

I

V t Q

t

Continuous Source C urrent ––– –––

(Body Diode) A Pulsed Source Current ––– ––– 750

Diode Forward Voltage ––– ––– 1.3 V Reverse Recovery Time ––– 28 42 ns Reverse Recovery Charge ––– 34 51 nC

Forward Turn-On Time

2 www.irf.com

Conditions

MOSFET symbol

integral reverse

T

= 25°C, IS = 75A**, VGS = 0V TJ = 25°C, IF = 75A**, VDD = 20V di/dt = 100A/μs

Intrinsic turn-on time is negligible (turn-on is dominated by LS +LD)

e

IRF1404Z/S/LPbF

1000

) A

( t

100

n e

r

r u

C e

c

r

10

u o S

o

t

n

i a

r

1

D ,

D

I

4.5V

20μs PULSE WIDTH

0.1

0.1 1 10 100

Tj = 25°C

VDS, Drain-to-Source Voltage (V)

1000

) A

(

t n e

r

100

r u

C e

c

r u o S

o

t

-

10

n

i a

r D

,

D

I

1

4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0

TJ = 25°C

TJ = 175°C

V

= 15V

DS

20μs PULSE WIDTH

VGS, Gate-to-Source Voltage (V)

V

TOP 15V 10V

7.0V

6.0V

5.5V

5.0V BOTTOM 4.5V

GS

8.0V

1000

V

TOP 15V

) A

( t n e

r

r u

C e

c

r u o S

o

t

n

i a

r D

, I

10V

7.0V

6.0V

5.5V

5.0V BOTTOM 4.5V

100

D

10

0.1 1 10 100

GS

8.0V

4.5V 20μs PULSE WIDTH

Tj = 175°C

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

200

) S

(

160

e c n a

t c u d

120

n o c s n a

r T

80

d

r a

w

r o F

40

, s

f G

0

0 40 80 120 160

ID, Drain-to-Source Current (A)

TJ = 175°C

TJ = 25°C

V

= 15V

DS

20μs PULSE WIDTH

Fig 3. Typical Transfer Characteristics

Fig 4. Typical Forward Transconductance

Vs. Drain Current

www.irf.com 3

IRF1404Z/S/LPbF

8000

6000

) F p

( e

c n a

t

4000

i c a p a

C ,

C

2000

0

1 10 100

V

= 0V, f = 1 MHZ

GS

C

= C

gs

gd

ds

Ciss

Coss

Crss

+ Cgd, C

+ C

iss

C

rss

C

oss

VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

1000.0

) A

( t n e

r

r u

C n

i a

r D e

s

r e v e

R ,

D S

I

100.0

10.0

TJ = 175°C

TJ = 25°C

1.0

0.1

0.2 0.6 1.0 1.4 1.8

VSD, Source-toDrain Voltage (V)

20

SHORTED

ds

gd

ID= 75A

) V

(

16

e g a

t

l o V

12

e c

r u o S

o

8

t

e

t a

G ,

S

4

G

V

0

0 40 80 120 160

VDS= 32V

VDS= 20V

Q

Total Gate Charge (nC)

G

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

V

GS

= 0V

10000

) A

( t

1000

n e

r

r u

C e

c

r u o S

o

t

n

i a

r D ,

D

I

100

10

Tc = 25°C Tj = 175°C Single Pulse

1

0 1 10 100 1000

OPERATION IN THIS AREA LIMITED BY RDS(on)

V

, Drain-toSource Voltage (V)

DS

100μsec

1msec

10msec

Fig 7. Typical Source-Drain Diode

Fig 8. Maximum Safe Operating Area

Forward Voltage

4 www.irf.com

IRF1404Z/S/LPbF

200

LIMITED BY PACKAGE

160

) A

( t n

120

e

r

r u

C n

i a

r

80

D ,

D

I

40

0

25 50 75 100 125 150 175

TC , Case Temperature (°C)

Fig 9. Maximum Drain Current Vs.

Case Temperature

1

2.0

e c n a

t s

i s e

R n O e

)

c

d

r

e

u

z

i

o

l

S

a

m

o

t

r

-

o

n

i

N

(

a

r D

,

) n o

( S D

R

ID = 75A

V

= 10V

GS

1.5

1.0

0.5

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

TJ , Junction Temperature (°C)

Fig 10. Normalized On-Resistance

Vs. Temperature

)

C J h

t

Z (

e s n o p s e

R l a

m

r e h T

0.001

D = 0.50

0.1

0.01

1E-006 1E-005 0.0001 0.001 0.01 0.1

0.20

0.10

0.05

0.02

0.01

SINGLE PULSE ( THERMAL RESPONSE )

t1 , Rectangular Pulse Duration (sec)

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

www.irf.com 5

IRF1404Z/S/LPbF

A

15V

DRIVER

+

V

DD

-

R

20V

V

DS

G

GS

L

D.U.T

I

AS

Ω

0.01

t

p

Fig 12a. Unclamped Inductive Test Circuit

V

(BR)DSS

t

p

I

AS

Fig 12b. Unclamped Inductive Waveforms

Q

G

10 V

Q

GS

V

G

Q

GD

Charge

Fig 13a. Basic Gate Charge Waveform

Current Regulator

Same Type as D.U.T.

50KΩ

.2μF

12V

V

GS

3mA

.3μF

D.U.T.

+

V

DS

-

600

) J

m

( y

500

g

r e n E

400

e h c n a

l a

300

v A

e s

l u

200

P e

l g n

i S

100

, S A

E

0

25 50 75 100 125 150 175

I

TOP 31A 53A BOTTOM 75A

Starting TJ, Junction Temperature (°C)

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

4.0

) V

( e

g a

t

l o

3.0

V d

l o h s e

r h

t e

t a

2.0

G

) h

t

( S G

V

1.0

-75 -50 -25 0 25 50 75 100 125 150 175

TJ , Temperature ( °C )

ID = 250μA

D

I

Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit

I

G

D

Fig 14. Threshold Voltage Vs. Temperature

6 www.irf.com

10000

IRF1404Z/S/LPbF

Duty Cycle = Single Pulse

1000

) A

( t n e

r

r u

C

100

e h c n a

l a v A

10

1

1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01

0.01

0.05

0.10

Allowed avalanche Current vs avalanche pulsewidth, tav assuming ΔTj = 25°C due to avalanche losses. Note: In no case should Tj be allowed to exceed Tjmax

tav (sec)

Fig 15. Typical Avalanche Current Vs.Pulsewidth

400

TOP Single Pulse BOTTOM 10% Duty Cycle

) J

m

300

( y

g

r e n E

e

200

h c n a

l a v A ,

100

R A

E

0

25 50 75 100 125 150 175

ID = 75A

Starting TJ , Junction Temperature (°C)

Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com)

1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a

temperature far in excess of T every part type.

. This is validated for

jmax

2. Safe operation in Avalanche is allowed as long asT not exceeded.

3. Equation below based on circuit and waveforms shown in Figures 12a, 12b.

4. P

avalanche pulse.

= Average power dissipation per single

D (ave)

5. BV = Rated breakdown voltage (1.3 factor accounts for

voltage increase during avalanche).

6. I

= Allowable avalanche current.

av

7. ΔT = Allowable rise in junction temperature, not to exceed

T

(assumed as 25°C in Figure 15, 16).

jmax

t

Average time in avalanche.

av =

D = Duty cycle in avalanche = t Z

(D, tav) = Transient thermal resistance, see figure 11)

thJC

av

·f

jmax

is

P

= 1/2 ( 1.3·BV·Iav) = DT/ Z

Fig 16. Maximum Avalanche Energy

Vs. Temperature

D (ave)

I

2DT/ [1.3·BV·Zth]

av =

E

= P

AS (AR)

D (ave)·tav

thJC

www.irf.com 7

IRF1404Z/S/LPbF





Reverse Recovery Current

Driver Gate Drive

D.U.T. ISDWaveform

D.U.T. VDSWaveform

Inductor Curent

* V

GS

D.U.T

+

-

R

G

+



Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

-

• Low Leakage Inductance Current Transformer



-

• dv/dt controlled by R

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

G

+

V

DD

Re-Applied Voltage

+

-

Period

P.W.

Body Diode Forward

Current

di/dt

Diode Recovery

dv/dt

Body Diode Forward Drop

Ripple ≤ 5%

= 5V for Logic Level Devices

D =

P. W .

Period

VGS=10V

V

DD

I

SD

*

Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET® Power MOSFETs

R

D.U.T.

D

+

V

DD

-

V

DS

V

GS

R

G

10V

Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %

Fig 18a. Switching Time Test Circuit

V

DS

90%

10% V

GS

t

d(on)tr

t

d(off)tf

Fig 18b. Switching Time Waveforms

8 www.irf.com

TO-220AB Package Outline

Dimensions are shown in millimeters (inches)

IRF1404Z/S/LPbF

TO-220AB Part Marking Information

EXAMPLE: THIS IS AN IRF1010

Note: "P" in assembly line position

Notes:

1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/datasheets/data/auirf1404z.pdf

2. For the most current drawing please refer to IR website at http://www.irf.com/package/

LOT CODE 1789 ASSEMBLED ON WW 19, 2000 IN THE AS SEMBLY LINE "C"

indicates "L ead - F ree"

INTE RNATIONAL

RECT IFIER

LOGO

AS S E MB L Y LOT CODE

www.irf.com 9

PART NUMBER

DAT E CODE YEAR 0 = 2000 WE EK 19 LINE C

IRF1404Z/S/LPbF

D2Pak (TO-263AB) Package Outline

Dimensions are shown in millimeters (inches)

D2Pak (TO-263AB) Part Marking Information

THIS IS AN IRF530S WITH LOT CODE 8024

AS S E MBL E D ON WW 02 , 2 00 0 IN THE ASSEMBLY LINE "L"

INTERNAT IONAL

RECTIFIER

LOGO

ASSEMBLY LOT CODE

F530S

OR

INTE RNATIONAL

RECTIFIER

LOGO

ASSEMBLY LOT CODE

F530S

PART NUMBER

DATE CODE P = DESIGNAT ES LEAD - FREE

YE AR 0 = 2000 WEEK 02 A = ASSEMBLY SITE CODE

Notes:

1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/datasheets/data/auirf1404z.pdf

2. For the most current drawing please refer to IR website at http://www.irf.com/package/

10 www.irf.com

PART NUMBE R

DATE CODE YEAR 0 = 2000 WEEK 02 LINE L

PRODUCT (OPTIONAL)

TO-262 Package Outline

Dimensions are shown in millimeters (inches)

IRF1404Z/S/LPbF

TO-262 Part Marking Information

EXAMPLE : T HIS IS AN IRL 3103L

LOT CODE 1789 ASS EMBL ED ON WW 19, 1997 IN THE ASSEMBLY LINE "C"

INTER NATIONAL

RECTIFIE R

LOGO

ASSEMBLY LOT CODE

OR

INTER NATIONAL

RECTIF IER

LOGO

ASSEMBLY LOT CODE

Notes:

1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/datasheets/data/auirf1404z.pdf

2. For the most current drawing please refer to IR website at http://www.irf.com/package/

www.irf.com 11

PART NUMBER

DATE CODE YEAR 7 = 1997 WEEK 19 LINE C

PART NUMBER

DATE CODE P = DE S IGNAT E S LE AD- F R EE

PRODU CT (OPTIONAL) YEAR 7 = 1997 WEEK 19 A = ASSEMBLY SITE CODE

IRF1404Z/S/LPbF

D2Pak Tape & Reel Information

TRR

FEED DIRECTION

TRL

FEED DI RECTION

1.85 (.073)

1.65 (.065)

10.90 (.429)

10.70 (.421)

4.10 (. 161)

3.90 (. 153)

1.60 (.063)

1.50 (.059)

11.60 (.457)

11.40 (.449)

16.10 (.634)

15.90 (.626)

1.60 (.063)

1.50 (.059)

1.75 (.069)

1.25 (.049)

15.42 (.609)

15.22 (.601)

0.368 (.0145)

0.342 (.0135)

24.30 (.957)

23.90 (.941)

4.72 (.136)

4.52 (.178)

13.50 (.532)

12.80 (.504)

330.00 (14.173) MAX.

NOTES :

1. COMFORMS TO EIA-418.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION MEASURED @ HUB.

4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

Notes:

Repetitive rating; pulse width limited by



max. junction temperature. (See fig. 11).

 Limited by T

RG = 25Ω, I

, starting TJ = 25°C, L = 0.11mH

Jmax

= 75A, VGS =10V. Part not

AS

recommended for use above this value.

 Pulse width ≤ 1.0ms; duty cycle ≤ 2%.  C

eff. is a fixed capacitance that gives the

oss

same charging time as C from 0 to 80% V

 Limited by T

DSS

, see Fig.12a, 12b, 15, 16 for

Jmax

oss

while V

is rising

DS

.

typical repetitive avalanche performance.

 This value determined from sample failure

population. 100% tested to this value in production.

This product has been designed and qualified for theIndustrial market.

27.40 (1.079)

23.90 (.941)

4

60.00 (2.362) MIN .

30.40 (1.197)

26.40 (1.039)

24.40 (.961)

MAX.

3

4

 This is only applied to TO-220AB pakcage.  This is applied to D

4 or G-10 Material). For recommended footprint and soldering

techniques refer to application note #AN-994.

2

Pak, when mounted on 1" square PCB (FR-

 TO-220 device will have an Rth value of 0.65°C/W.

 Calculated continuous current based on maximum allowable

junction temperature. Bond wire current limit is 120A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements.

** All AC and DC test condition based on former Package limited

current of 75A.

Data and specifications subject to change without notice.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.06/2012

12 www.irf.com

Datasheet IRF1404ZSPBF Datasheet

Specifications and Main Features

Frequently Asked Questions

User Manual