Datasheet IRF1404Z Datasheet (IOR)

Pulsed Drain C

c

Single Pul

d

Single Pul

h

Aval

c

R

g

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PD - 11371

AUTOMOTIVE MOSFET

IRF1404Z

HEXFET® Power MOSFET

Features

● Advanced Process Technology

● Ultra Low On-Resistance

● 175°C Operating Temperature

● Fast Switching

● Repetitive Avalanche Allowed up to Tjmax

G

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Absolute Maximum Ratings

Parameter Units

ID @ TC = 25°C ID @ TC = 100°C I

@ TC = 25°C

D

I

DM

PD @TC = 25°C

V

GS

E

AS (Thermally limited)

(Tested )

E

AS

I

AR

E

AR

T

J

T

STG

Continuous Drain Current, V Continuous Drain Current, V Continuous Drain Current, V

urrent Power Dissipation W Linear Derating Factor W/°C

Gate-to-Source Voltage V

se Avalanche Energy se Avalanche Energy Tested Value

anche Current

epetitive Avalanche Energy

Operating Junction and Storage Temperature Range °C

Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw



@ 10V (Silicon Limited)

GS

@ 10V

GS

@ 10V (Package Limited)

GS

Thermal Resistance

Parameter Typ. Max. Units

R

θJC

R

θCS

R

θJA

Junction-to-Case ––– 0.67 Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W Junction-to-Ambient ––– 62

www.irf.com 1

D

V

DSS

R

DS(on)

S

ID = 75A

TO-220AB

Max.

190

130

75 750 220

1.5

± 20

320 480

See Fig.12a, 12b, 15, 16

-55 to + 175

300 (1.6mm from case )

y

in (1.1Nym)

10 lbf

= 40V

= 3.7mΩ

mJ

A

3/5/03

IRF1404Z

/

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

gfs Forward Transconductance 170 ––– ––– V I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

D

L

S

C

iss

C

oss

C

rss

C

oss

C

oss

eff.

C

oss

Drain-to-Source Breakdown Voltage 40 ––– ––– V

∆T

Breakdown Voltage Temp. Coefficient ––– 0.033 ––– V/°C

J

Static Drain-to-Source On-Resistance ––– 2.7 3.7 Gate Threshold Voltage 2.0 ––– 4.0 V

VGS = 0V, ID = 250µA Reference to 25°C, I

mΩ

V VDS = VGS, ID = 250µA VDS = 25V, ID = 75A

Drain-to-Source Leakage Current ––– ––– 20 µA

––– ––– 250 Gate-to-Source Forward Leakage ––– ––– 200 nA Gate-to-Source Reverse Leakage ––– ––– -200 Total Gate Charge ––– 100 150 Gate-to-Source Charge ––– 31 ––– nC Gate-to-Drain ("Miller") Charge ––– 42 ––– Turn-On Delay Time ––– 18 ––– Rise Time ––– 110 ––– Turn-Off Delay Time ––– 36 ––– ns Fall Time ––– 58 –––

V V V V I V VGS = 10V VDD = 20V I R VGS = 10V

Internal Drain Inductance ––– 4.5 ––– Between lead,

nH 6mm (0.25in.)

Internal Source Inductanc e ––– 7.5 ––– from pack age

and center of die contact

Input Capacitance ––– 4340 ––– Output Capacitance ––– 1030 ––– Reverse Transfer Capacitance ––– 550 ––– pF Output Capacitance ––– 3300 ––– Output Capacitance ––– 920 ––– Effective Output Capacitance ––– 1350 –––

VGS = 0V V ƒ = 1.0MHz V V V

GS

DS DS GS GS

= 75A

D

DS

= 75A

D

G

DS

GS GS GS

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units

I

S

Continuous Source Current ––– ––– 75 (Body Diode) A

I

V t Q t

SM

SD

rr

on

Pulsed Source Current ––– ––– 750 (Body Diode)

c

Diode Forward Voltage ––– ––– 1.3 V Reverse Recovery Time ––– 28 42 ns Reverse Recovery Charge ––– 34 51 nC Forward Turn-On Time

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. (See fig. 11).

 Limited by T

RG = 25Ω, I

, starting TJ = 25°C, L = 0.11mH

Jmax

= 75A, VGS =10V. Part not

AS

recommended for use above this value.

 Pulse width ≤ 1.0ms; duty cycle ≤ 2%.

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

 C

eff. is a fixed capacitance that gives the same charging time

oss

as C  Limited by T

oss

while V

is rising from 0 to 80% V

DS

, see Fig.12a, 12b, 15, 16 for typical repetitive

Jmax

avalanche performance.  This value determined from sample failure population. 100% tested to this value in production.

MOSFET symbol showing the

integral reverse p-n junction diode.

T

= 25°C, IS = 75A, VGS = 0V

J

TJ = 25°C, IF = 75A, VDD = 25V di/dt = 100A/µs

2 www.irf.com

Conditions

= 1mA

D

= 10V, ID = 75A

e

= 40V, VGS = 0V = 40V, VGS = 0V, TJ = 125°C = 20V = -20V

= 32V

e

= 3.0 Ω

e

= 25V

= 0V, VDS = 1.0V, ƒ = 1.0MHz = 0V, VDS = 32V, ƒ = 1.0MHz = 0V, VDS = 0V to 32V

f

Conditions

e

.

DSS

e

IRF1404Z

1000

) A

(

t

100

n

e

r

u C e

c

r

10

u

o S

-

o

t

-

n

i

a

r

1

D

,

D

I

4.5V

20µs PULSE WIDTH

0.1

0.1 1 10 100

Tj = 25°C

VDS, Drain-to-Source Voltage (V)

1000

) A

(

t

n

e

r

100

r

u C e

c

r

u

o S

-

o

t

-

10

n

i

a

r D

,

D

I

1

4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0

TJ = 25°C

TJ = 175°C

V

= 15V

DS

20µs PULSE WIDTH

VGS, Gate-to-Source Voltage (V)

V

TOP 15V 10V

8.0V

7.0V

6.0V

5.5V

5.0V BOTTOM 4.5V

GS

1000

V

TOP 15V

) A

(

t

n

e

r

u C e

c

r

u

o S

-

o

t

-

n

i

a

r D

, I

10V

7.0V

6.0V

5.5V

5.0V BOTTOM 4.5V

100

D

10

0.1 1 10 100

8.0V

GS

4.5V 20µs PULSE WIDTH

Tj = 175°C

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

200

) S

(

160

e

c

n

a

t

c

u

d

120

n

o

c

s

n

a

r T

80

d

r

a w

r

o F

40

,

s

f G

0

0 40 80 120 160

ID, Drain-to-Source Current (A)

TJ = 175°C

TJ = 25°C

V

= 15V

DS

20µs PULSE WIDTH

Fig 3. Typical Transfer Characteristics

Fig 4. Typical Forward Transconductance

Vs. Drain Current

www.irf.com 3

IRF1404Z

8000

6000

) F

p

( e

c

n

a

t

4000

i

c

a

p

a C

, C

2000

0

1 10 100

V

= 0V, f = 1 MHZ

GS

C

= C

gs

gd

ds

Ciss

Coss Crss

+ Cgd, C

+ C

iss

C

rss

C

oss

VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

1000.0

) A

(

t

n

e

r

u C n

i

a

r D e

s

r

e

v

e R

,

D S

I

100.0

10.0

1.0

0.1

TJ = 175°C

TJ = 25°C

0.2 0.6 1.0 1.4 1.8 VSD, Source-toDrain Voltage (V)

20

SHORTED

ds

gd

ID= 75A

) V

(

16

e

g

a

t

l

o V

12

e

c

r

u

o S

-

o

8

t

-

e

t

a G

,

S

4

G

V

0

0 40 80 120 160

VDS= 32V VDS= 20V

Q

Total Gate Charge (nC)

G

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

V

GS

= 0V

10000

) A

(

t

n

e

r

u C e

c

r

u

o S

-

o

t

-

n

i

a

r D

,

D

I

1000

100

10

Tc = 25°C Tj = 175°C Single Pulse

1

0 1 10 100 1000

V

OPERATION IN T HIS AREA LIMITED BY RDS(on)

, Drain-toSource Voltage (V)

DS

100µsec

1msec

10msec

Fig 7. Typical Source-Drain Diode

Fig 8. Maximum Safe Operating Area

Forward Voltage

4 www.irf.com

IRF1404Z

200

LIMITED BY PACKAGE

160

) A

(

t

n

120

e

r

u C n

i

a

80

r D

,

D

I

40

0

25 50 75 100 125 150 175

TC , Case Temperature (°C)

Fig 9. Maximum Drain Current Vs.

Case Temperature

1

2.0

e

c

n

a

t

s

i

s

e R n O

)

e

d

c

r

e

z

u

i

l

o

a

S

-

m

o

r

t

o

-

n

N

i

(

a

r D

,

)

n

o

( S D

R

ID = 75A V

= 10V

GS

1.5

1.0

0.5

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

TJ , Junction Temperature (°C)

Fig 10. Normalized On-Resistance

Vs. Temperature

)

C

J

h

t

Z (

e

s

n

o

p

s

e R

l

a m

r

e

h T

0.001

D = 0.50

0.1

0.01

1E-006 1E-005 0.0001 0.001 0.01 0.1

0.20

0.10

0.05

0.02

0.01

SINGLE PULSE ( THERMAL RESPONSE )

t1 , Rectangular Pulse Duration (sec)

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

www.irf.com 5

IRF1404Z

A

15V

DRIVER

+

-

V

DD

R

V

20V

V

DS

G

GS

L

D.U.T

I

AS

0.01

t

p

Ω

Fig 12a. Unclamped Inductive Test Circuit

V

(BR)DSS

t

p

I

AS

Fig 12b. Unclamped Inductive Waveforms

Q

G

10 V

Q

GS

Q

GD

600

)

J m

(

500

y

g

r

e

n E

400

e

h

c

n

a

l

a

300

v A

e

s

l

u

200

P e

l

g

n

i S

100

, S A

E

0

25 50 75 100 125 150 175

I

TOP 31A 53A BOTTOM 75A

Starting TJ, Junction Temperature (°C)

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

4.0

D

) V

V

G

Charge

Fig 13a. Basic Gate Charge Waveform

Current Regulator

Same Type as D.U.T.

50KΩ

.2µF

12V

V

GS

.3µF

D.U.T.

3mA

I

G

Current Sampling Resistors

+

V

DS

-

D

Fig 13b. Gate Charge Test Circuit

( e

g

a

t

l

o

3.0

V d

l

o

h

s

e

r

h

t e

t

a

2.0

G

)

h

t

( S G

V

1.0

-75 -50 -25 0 25 50 75 100 125 150 175

ID = 250µA

TJ , Temperature ( °C )

Fig 14. Threshold Voltage Vs. Temperature

6 www.irf.com

10000

IRF1404Z

Duty Cycle = Single Pulse

1000

) A

(

t

n

e

r

u C

100

e

h

c

n

a

l

a

v A

10

1

1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01

0.01

0.05

0.10

Allowed avalanche Current vs avalanche pulsewidth, tav assuming ∆Tj = 25°C due to avalanche losses. Note: In no case should Tj be allowed to exceed Tjmax

tav (sec)

Fig 15. Typical Avalanche Current Vs.Pulsewidth

400

TOP Single Pulse BOTTOM 10% Duty Cycle

)

J m

300

( y

g

r

e

n E

e

200

h

c

n

a

l

a

v A

,

100

R A

E

0

25 50 75 100 125 150 175

ID = 75A

Starting TJ , Junction Temperature (°C)

Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com)

1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a

temperature far in excess of T

. This is validated for

jmax

every part type.

2. Safe operation in Avalanche is allowed as long asT not exceeded.

3. Equation below based on circuit and waveforms shown in Figures 12a, 12b.

4. P

= Average power dissipation per single

D (ave)

avalanche pulse.

5. BV = Rated breakdown voltage (1.3 factor accounts for

voltage increase during avalanche).

6. I

= Allowable avalanche current.

av

7. ∆T = Allowable rise in junction temperature, not to exceed

T

(assumed as 25°C in Figure 15, 16).

jmax

t

Average time in avalanche.

av =

D = Duty cycle in avalanche = t Z

(D, tav) = Transient thermal resistance, see figure 11)

thJC

av

·f

jmax

is

P

= 1/2 ( 1.3·BV·Iav) = DT/ Z

Fig 16. Maximum Avalanche Energy

Vs. Temperature

D (ave)

I

2DT/ [1.3·BV·Zth]

av =

E

= P

AS (AR)

D (ave)·tav

thJC

www.irf.com 7

IRF1404Z





Reverse Recovery Current

Driver Gate Drive

D.U.T. ISDWaveform

D.U.T. VDSWaveform

Inductor Curent

* V

GS

D.U.T

+

-

R

G

+



Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

-

• Low Leakage Inductance Current Transformer



-

• dv/dt controlled by R

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

G

+

V

DD

Re-Applied Voltage

+

-

Period

P.W.

Body Diode Forward

Current

di/dt

Diode Recovery

dv/dt

Body Diode Forward Drop

Ripple ≤ 5%

= 5V for Logic Level Devices

D =

P.W.

Period

VGS=10V

V

DD

I

SD

*

Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET® Power MOSFETs

R

D.U.T.

D

+

V

DD

-

V

DS

V

GS

R

G

10V

Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %

Fig 18a. Switching Time Test Circuit

V

DS

90%

10% V

GS

t

d(on)tr

t

d(off)tf

Fig 18b. Switching Time Waveforms

8 www.irf.com

TO-220AB Package Outline

E

X

A

M

P

L

E

:

T

H

I

S

I

S

A

N

I

R

F

1

0

1

0

L

O

T

C

O

D

E

1

7

8

9

A

S

E

M

B

L

E

D

O

N

W

1

9

,

1

9

7

I

N

T

H

E

A

S

E

M

B

L

Y

L

I

N

E

"

C

"

I

N

T

E

R

N

A

T

I

O

N

A

L

R

E

C

T

I

F

I

E

R

L

O

G

O

A

S

E

M

B

L

Y

L

O

T

C

O

D

E

P

A

R

T

N

U

M

B

E

R

D

A

T

E

C

O

D

E

Y

E

A

R

7

=

1

9

7

W

E

K

1

9

L

I

N

E

C

Dimensions are shown in millimeters (inches)

2.87 (.113)

2.62 (.103)

15.24 (.600)

14.84 (.584)

14.09 (.555)

13.47 (.530)

10.54 (.415)

10.29 (.405)

1 2 3

4

6.47 (.255)

6.10 (.240)

1.15 (.045 ) MIN

4.06 (.160)

3.55 (.140)

3.78 (.149)

3.54 (.139)

- A -

4.69 (.185)

4.20 (.165)

- B -

1.32 (.052)

1.22 (.048)

IRF1404Z

LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN

0.93 (.037)

3X

1.40 (.055)

3X

1.15 (.045)

2.54 (.100 )

NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.

2X

0.69 (.027)

0.36 (.014) M B A M

0.55 (.022 )

3X

0.46 (.018 )

2.92 (.115)

2.64 (.104)

TO-220AB Part Marking Information

TO-220AB packages are not recommended for Surface Mount Application.

Data and specifications subject to change without notice.

This product has been designed and qualified for the Automotive [Q101] market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information. 3/03

www.irf.com 9

Datasheet IRF1404Z Datasheet (IOR)

Specifications and Main Features

Frequently Asked Questions

User Manual