Datasheet IRF1404S, IRF1404L Datasheet (International Rectifier)

PD -93853C

IRF1404S

IRF1404L

HEXFET® Power MOSFET

l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated

Description

Seventh Generation HEXFET® Power MOSFETs from

G

International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in a wide variety of applications.

The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on­resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0W in a typical surface mount application.
The through-hole version (IRF1404L) is available for low­profile applications.

Absolute Maximum Ratings

Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 162
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 115 A
I

DM

PD @TA = 25°C Power Dissipation 3.8 W
PD @TC = 25°C Power Dissipation 200 W

V

GS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt  5.0 V/ns
T

J

T

STG

Pulsed Drain Current  650

Linear Derating Factor 1.3 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 519 m J
Avalanche Current 95 A
Repetitive Avalanche Energy 20 mJ

Operating Junction and -55 to +175
Storage Temperature Range -55 to +175
Soldering Temperature, for 10 seconds 300 (1.6mm from case )

Thermal Resistance

Parameter Typ. Max. Units

R

θJC

R

θJA

Junction-to-Case ––– 0.75 °C/W
Junction-to-Ambient (PCB mounted, steady-state)* ––– 40

D

S

D2Pak

IRF1404S

V

DSS

R

DS(on)

= 0.004Ω

ID = 162A

TO-262

IRF1404L

= 40V

°C

www.irf.com 1

5/18/01

IRF1404S/L

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

S

C

iss

C

oss

C

rss

C

oss

C

oss

C

eff. Effective Output Capacitance  ––– 1540 ––– VGS = 0V, VDS = 0V to 32V

oss

Source-Drain Ratings and Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. (See fig. 11)

 Starting T

RG = 25Ω, I

 I

SD

TJ ≤ 175°C

 Pulse width ≤ 300µs; duty cycle ≤ 2%.

Drain-to-Source Breakdown Voltage 40 ––– ––– V VGS = 0V, ID = 250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.036 ––– V/°C Reference to 25°C, ID = 1mA

J

Static Drain-to-Source On-Resistance ––– 0.0035 0.004 Ω VGS = 10V, ID = 95A 
Gate Threshold Voltage 2.0 –– – 4.0 V VDS = 10V, ID = 250µA
Forward Transconductance 106 ––– ––– S VDS = 25V, ID = 60A

Drain-to-Source Leakage Current

––– ––– 20

––– ––– 250 VDS = 32V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 200 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -200

VDS = 40V, VGS = 0V

µA

nA

VGS = -20V
Total Gate Charge ––– 160 200 ID = 95A
Gate-to-Source Charge ––– 35 ––– nC VDS = 32V
Gate-to-Drain ("Miller") Charge – –– 42 60 VGS = 10V 
Turn-On Delay Time ––– 17 – –– VDD = 20V
Rise Time ––– 140 ––– ID = 95A
Turn-Off Delay Time ––– 72 ––– RG = 2.5Ω

ns

Fall Time ––– 26 ––– RD = 0.21Ω 

Internal Source Inductance

–––

7.5

–––

Between lead,

nH

and center of die contact
Input Capacitance ––– 7360 ––– VGS = 0V
Output Capacitance ––– 1680 ––– VDS = 25V
Reverse Transfer Capacitance ––– 240 ––– pF ƒ = 1.0MHz, See Fig. 5 
Output Capacitance ––– 6630 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Output Capacitance ––– 1490 ––– VGS = 0V, VDS = 32V, ƒ = 1.0MHz

Parameter Min. Typ. Max. Units Conditions
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode) 

––– –––

––– –––

162

650

showing the

A

p-n junction diode.
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 95A, VGS = 0V 
Reverse Recovery Time ––– 71 110 ns TJ = 25°C, IF = 95A
Reverse RecoveryCharge – –– 180 270 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

 C

eff. is a fixed capacitance that gives the same charging time

oss

= 25°C, L = 0.12mH

J

= 95A. (See Figure 12)

AS

≤ 95A, di/dt ≤ 150A/µs, V

DD

≤ V

(BR)DSS

as C

 Calculated continuous current based on maximum allowable

junction temperature. Package limitation current is 75A

,

 Use IRF1404 data and test conditions.

oss

while V

is rising from 0 to 80% V

DS

DSS

D

G

S



* When mounted on 1" square PCB ( FR-4 or G-10 Material ).

For recommended footprint and soldering techniques refer to application note #AN-994.

2 www.irf.com

IRF1404S/L

1000

100

D

I , Drain-to-Source Current (A)

10

0.1 1 10 100

1000

VGS

TOP

15V
10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM

4.5V

4.5V

20µs PULSE WIDTH
T = 25 C

J

V , Drain-to-Source Voltage (V)

DS

°

T = 25 C

J

°

T = 175 C

J

1000

100

D

I , Drain-to-Source Current (A)

10

0.1 1 10 100

VGS

TOP

15V
10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM

4.5V

4.5V

20µs PULSE WIDTH
T = 175 C

V , Drain-to-Source Voltage (V)

DS

°

J

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

2.5

°

2.0

159A

I =

D

1.5

100

1.0

(Normalized)

D

I , Drain-to-Source Current (A)

V = 25V

DS

10

4.0 5.0 6.0 7.0 8.0 9.0

V , Gate-to-Source Voltage (V)

GS

20µs PULSE WIDTH

Fig 3. Typical Transfer Characteristics

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

T , Junction Temperature ( C)

J

Fig 4. Normalized On-Resistance

V =

10V

GS

°

Vs. Temperature

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IRF1404S/L

12000

10000

8000

6000

4000

C, Capacitance (pF)

2000

0

1 10 100

V

=

0V,

C

C

C
C
C

iss

oss

rss

f = 1MHz

+ C
+ C

C SHORTED

GS

C

=

issgsgd , ds

C

=

rssgd

C

=

oss dsgd

C

V , Drain-to-Source Voltage (V)

DS

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

1000

°

T = 175 C

J

100

20

I =

95A

D

V = 32V

DS

16

12

8

4

GS

V , Gate-to-Source Voltage (V)

0

0 40 80 120 160 200 240

Q , Total Gate Charge (nC)

G

V = 20V

DS

FOR TEST CIRCUIT

SEE FIGURE

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

10000

1000

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

10us

13

100us

1ms

10ms

°

T = 25 C

J

10

SD

I , Reverse Drain Current (A)

V = 0 V

1

0.4 0.8 1.2 1.6 2.0 2.4

V ,Source-to-Drain Voltage (V)

SD

GS

Fig 7. Typical Source-Drain Diode

100

D

I , Drain Current (A)I , Drain Current (A)

10

°

= 25 C

C

T T= 175 C
Single Pulse

1

1 10 100

°

J

V , Drain-to-Source Voltage (V)

DS

Fig 8. Maximum Safe Operating Area

Forward Voltage

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200

LIMITED BY PACKAGE

160

120

80

D

I , Drain Current (A)

40

0

25 50 75 100 125 150 175

T , Case Temperature ( C)

C

°

Fig 9. Maximum Drain Current Vs.

Case Temperature

IRF1404S/L

R

D.U.T.

t

d(off)tf

D

V

DS

V

GS

R

G

10V

Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

V

DS

90%

10%
V

GS

t

d(on)tr

Fig 10b. Switching Time Waveforms

+

V

DD

-

1

D = 0.50

thJC

0.20

0.1

0.10
P

0.05

Thermal Response(Z )

0.01

0.02

0.01

0.00001 0.0001 0.001 0.01 0.1 1

SINGLE PULSE

(THERMAL RESPONSE)

Notes:

1. Duty factor D = t / t

2. Peak T =P x Z + T

t , Rectangular Pulse Duration (sec)

1

J DM thJC C

DM

t

1 2

1

t

2

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRF1404S/L

A

15V

DRIVER

+

-

V

R

20V

V

DS

G

t

L

D.U.T

I

AS

0.01

p

Ω

Fig 12a. Unclamped Inductive Test Circuit

V

(BR)DSS

t

p

I

AS

Fig 12b. Unclamped Inductive Waveforms

Q

G

10 V

Q

GS

Q

GD

DD

1200

TOP

1000

800

600

400

200

AS

E , Single Pulse Avalanche Energy (mJ)

0

25 50 75 100 125 150 175

Starting T , Junction Temperature( C)

J

BOTTOM

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

50

I

D
39A
67A
95A

°

V

G

Charge

48

46

Fig 13a. Basic Gate Charge Waveform

Current Regulator

Same Type as D.U.T.

50KΩ

.2µF

12V

V

GS

.3µF

D.U.T.

3mA

I

G

Current Sampling Resistors

+

V

DS

-

I

D

Fig 13b. Gate Charge Test Circuit

44

, Avalanche Voltage ( V )

42

DSav

V

40

0 20 40 60 80 100

I

, Avalanche Current ( A)

AV

Fig 12d. Typical Drain-to-Source Voltage

Vs. Avalanche Current

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IRF1404S/L

Peak Diode Recovery dv/dt Test Circuit





D.U.T

+

-

R

G

Driver Gate Drive

P.W.

+

Circuit Layout Considerations

• Low Stray Inductance



• Ground Plane

• Low Leakage Inductance
Current Transformer

-

-

• dv/dt controlled by R

• Driver same type as D.U.T.

G

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

Period

D =



P.W.

Period

+

+

V

DD

-

VGS=10V

*

D.U.T. ISDWaveform

Reverse
Recovery
Current

Re-Applied
Voltage

D.U.T. VDSWaveform

Inductor Curent

* V

= 5V for Logic Level Devices

GS

Fig 14. For N-channel HEXFET

Body Diode Forward

Current

di/dt

Diode Recovery

dv/dt

Body Diode Forward Drop

Ripple ≤ 5%

V

DD

I

SD

®

Power MOSFETs

www.irf.com 7

IRF1404S/L

F530S

THIS IS AN IRF530S WITH

LO T CO D E 8024
ASSEMBLED O N WW 02, 2000
IN THE AS SEMBLY LINE "L"

ASSEMBLY
LOT CODE

INTERNATIONAL

RECT IFIE R

LOGO

PART NUMBER

DA TE CODE
YEA R 0 = 2000
WEEK 0 2
LINE L

D2Pak Package Outline

2

D

Pak Part Marking Information

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TO-262 Package Outline

EXAMPLE:

THIS IS AN IRL3103 L
LOT CODE 1789

ASSEMBLY

PART NUMBER

DATE CODE

WEEK 19
LINE C

LOT CODE

YEAR 7 = 1997

ASSEMBLED ON WW 19, 1997
IN THE ASSEMBLY LINE "C"

LOGO

RECTIFIER

INTERNATIONAL

IRF1404S/L

TO-262 Part Marking Information

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IRF1404S/L

D2Pak Tape & Reel Information

TRR

1.60 (.063)

1.50 (.059)

4.10 (.161)

3.90 (.153)

FEED DIRECTION

TRL

FEED DIRECTION

1.85 (.073)

1.65 (.065)

10.90 (.429)

10.70 (.421)

11.60 (.457)

11.40 (.449)

16.10 (.634)

15.90 (.626)

1.60 (.063)

1.50 (.059)

1.75 (.069)

1.25 (.049)

15.42 (.609 )

15.22 (.601 )

0.368 (.0145)

0.342 (.0135)

24.30 (.957)

23.90 (.941)

4.72 (.136)

4.52 (.178)

13.50 (.532)

12.80 (.504)

330.00
(14.173)
MA X.

NOTES :

1. COMFORMS TO EIA-418.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION MEASURED @ HUB.

4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

Data and specifications subject to change without notice.

This product has been designed and qualified for the Industrial market.

27.40 (1.079)

23.90 (.941)

4

60.00 (2.362)
MIN.

30.40 (1.197)

26.40 (1.0 39 )

24.40 (.961)
3

MAX.

4

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: [phone]

TAC Fax: [phone]

Visit us at www.irf.com for sales contact information.5/01

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