Datasheet IRF1404 Datasheet (International Rectifier)

PD -91896E

IRF1404

HEXFET® Power MOSFET

l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated

G

D

V

= 40V

DSS

R

DS(on)

= 0.004Ω

ID = 162A

Description

Seventh Generation HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in a wide variety of applications.

The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the industry.

Absolute Maximum Ratings

Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 162
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 115 A
I

DM

PD @TC = 25°C Power Dissipation 200 W

V

GS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt  5.0 V/ns
T

J

T

STG

Pulsed Drain Current  650

Linear Derating Factor 1.3 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 519 mJ
Avalanche Current 95 A
Repetitive Avalanche Energy 20 mJ

Operating Junction and -55 to + 175
Storage Temperature Range -55 to + 175
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting Torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)

S

TO-220AB

°C

Thermal Resistance

Parameter Typ. Max. Units

R

θJC

R

θCS

R

θJA

Junction-to-Case ––– 0.75
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
Junction-to-Ambient ––– 62

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10/20/00

IRF1404

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

D

L

S

C

iss

C

oss

C

rss

C

oss

C

oss

C

eff. Effective Output Capacitance  ––– 1540 ––– VGS = 0V, VDS = 0V to 32V

oss

Drain-to-Source Breakdown Voltage 40 –– – ––– V VGS = 0V, ID = 250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.036 ––– V/°C Reference to 25°C, ID = 1mA

J

Static Drain-to-Source On-Resistance ––– 0.0035 0.004 Ω VGS = 10V, ID = 95A 
Gate Threshold Voltage 2.0 ––– 4. 0 V VDS = 10V, ID = 250µA
Forward Transconductance 106 ––– ––– S VDS = 25V, ID = 60A

Drain-to-Source Leakage Current

––– ––– 20

––– ––– 250 VDS = 32V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 200 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -200

VDS = 40V, VGS = 0V

µA

nA

VGS = -20V
Total Gate Charge –– – 160 200 ID = 95A
Gate-to-Source Charge ––– 35 ––– nC VDS = 32V
Gate-to-Drain ("Miller") Charge ––– 42 60 VGS = 10V
Turn-On Delay Time ––– 17 ––– VDD = 20V
Rise Time ––– 140 ––– ID = 95A
Turn-Off Delay Time ––– 72 ––– RG = 2.5Ω

ns

Fall Time ––– 26 ––– RD = 0.21Ω 

4.5

Internal Drain Inductance

Internal Source Inductance ––– –––

––– –––

7.5

Between lead,

6mm (0.25in.)

nH

from package

and center of die contact
Input Capacitance ––– 7360 ––– VGS = 0V
Output Capacitance ––– 1680 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 240 ––– ƒ = 1.0MHz, See Fig. 5
Output Capacitance ––– 6630 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Output Capacitance ––– 1490 ––– VGS = 0V, VDS = 32V, ƒ = 1.0MHz

D

G

S

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode) 

––– –––

––– –––

162

650

showing the

A

p-n junction diode.

G

Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 95A, VGS = 0V 
Reverse Recovery Time ––– 71 110 ns TJ = 25°C, IF = 95A
Reverse RecoveryCharge – –– 180 270 nC di/dt = 100A/µs



Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. (See fig. 11)

 Starting T

RG = 25Ω, I

 I

SD

= 25°C, L = 0.12mH

J

= 95A. (See Figure 12)

AS

≤ 95A, di/dt ≤ 150A/µs, V

DD

≤ V

(BR)DSS

 Pulse width ≤ 300µs; duty cycle ≤ 2%.

 C

eff. is a fixed capacitance that gives the same charging time

oss

as C

 Calculated continuous current based on maximum allowable

,

junction temperature. Package limitation current is 75A

oss

while V

is rising from 0 to 80% V

DS

DSS

TJ ≤ 175°C

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D

S

IRF1404

1000

100

D

I , Drain-to-Source Current (A)

10

0.1 1 10 100

1000

VGS

TOP

15V
10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM

4.5V

4.5V

20µs PULSE WIDTH
T = 25 C

J

V , Drain-to-Source Voltage (V)

DS

°

T = 25 C

J

°

T = 175 C

J

1000

100

D

I , Drain-to-Source Current (A)

10

0.1 1 10 100

VGS

TOP

15V
10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM

4.5V

4.5V

20µs PULSE WIDTH
T = 175 C

V , Drain-to-Source Voltage (V)

DS

°

J

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

2.5

°

2.0

159A

I =

D

1.5

100

1.0

(Normalized)

D

I , Drain-to-Source Current (A)

V = 25V

DS

10

4.0 5.0 6.0 7.0 8.0 9.0

V , Gate-to-Source Voltage (V)

GS

20µs PULSE WIDTH

Fig 3. Typical Transfer Characteristics

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

T , Junction Temperature ( C)

J

Fig 4. Normalized On-Resistance

V =

10V

GS

°

Vs. Temperature

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IRF1404

12000

10000

8000

6000

4000

C, Capacitance (pF)

2000

0

1 10 100

V

=

0V,

C

C

C
C
C

iss

oss

rss

f = 1MHz

+ C
+ C

C SHORTED

GS

C

=

issgsgd , ds

C

=

rssgd

C

=

oss dsgd

C

V , Drain-to-Source Voltage (V)

DS

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

1000

°

T = 175 C

J

100

20

I =

95A

D

V = 32V

DS

16

12

8

4

GS

V , Gate-to-Source Voltage (V)

0

0 40 80 120 160 200 240

Q , Total Gate Charge (nC)

G

V = 20V

DS

FOR TEST CIRCUIT

SEE FIGURE

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

10000

1000

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

10us

13

100us

1ms

10ms

°

T = 25 C

J

10

SD

I , Reverse Drain Current (A)

V = 0 V

1

0.4 0.8 1.2 1.6 2.0 2.4

V ,Source-to-Drain Voltage (V)

SD

GS

Fig 7. Typical Source-Drain Diode

100

D

I , Drain Current (A)I , Drain Current (A)

10

°

= 25 C

C

T T= 175 C
Single Pulse

1

1 10 100

°

J

V , Drain-to-Source Voltage (V)

DS

Fig 8. Maximum Safe Operating Area

Forward Voltage

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200

LIMITED BY PACKAGE

160

120

80

D

I , Drain Current (A)

40

0

25 50 75 100 125 150 175

T , Case Temperature ( C)

C

°

Fig 9. Maximum Drain Current Vs.

Case Temperature

IRF1404

R

D.U.T.

t

d(off)tf

D

V

DS

V

GS

R

G

10V

Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

V

DS

90%

10%
V

GS

t

d(on)tr

Fig 10b. Switching Time Waveforms

+

V

DD

-

1

D = 0.50

thJC

0.20

0.1

0.10
P

0.05

Thermal Response (Z )

0.01

0.02

0.01

0.00001 0.0001 0.001 0.01 0.1 1

SINGLE PULSE

(THERMAL RESPONSE)

Notes:

1. Duty factor D = t / t

2. Peak T =P x Z + T

t , Rectangular Pulse Duration (sec)

1

J DM thJC C

DM

t

1 2

1

t

2

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRF1404

A

15V

DRIVER

+

-

V

R

20V

V

DS

G

t

L

D.U.T

I

AS

0.01

p

Ω

Fig 12a. Unclamped Inductive Test Circuit

V

(BR)DSS

t

p

I

AS

Fig 12b. Unclamped Inductive Waveforms

Q

G

10 V

Q

GS

Q

GD

DD

1200

TOP

1000

800

600

400

200

AS

E , Single Pulse Avalanche Energy (mJ)

0

25 50 75 100 125 150 175

Starting T , Junction Temperature( C)

J

BOTTOM

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

50

I

D
39A
67A
95A

°

V

G

Charge

48

46

Fig 13a. Basic Gate Charge Waveform

Current Regulator

Same Type as D.U.T.

50KΩ

.2µF

12V

V

GS

.3µF

D.U.T.

3mA

I

G

Current Sampling Resistors

+

V

DS

-

I

D

Fig 13b. Gate Charge Test Circuit

44

, Avalanche Voltage ( V )

42

DSav

V

40

0 20 40 60 80 100

I

, Avalanche Current ( A)

AV

Fig 12d. Typical Drain-to-Source Voltage

Vs. Avalanche Current

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IRF1404

Peak Diode Recovery dv/dt Test Circuit





D.U.T

+

-

R

G

Driver Gate Drive

P.W.

+

Circuit Layout Considerations

• Low Stray Inductance



• Ground Plane

• Low Leakage Inductance
Current Transformer

-

-

• dv/dt controlled by R

• Driver same type as D.U.T.

G

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

Period

D =



P.W.

Period

+

+

V

DD

-

VGS=10V

*

D.U.T. ISDWaveform

Reverse
Recovery
Current

Re-Applied
Voltage

D.U.T. VDSWaveform

Inductor Curent

* V

= 5V for Logic Level Devices

GS

Fig 14. For N-channel HEXFET

Body Diode Forward

Current

di/dt

Diode Recovery

dv/dt

Body Diode Forward Drop

Ripple ≤ 5%

V

DD

I

SD

®

Power MOSFETs

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IRF1404

A

TO-220AB Package Outline

Dimensions are shown in millimeters (inches)

10.54 (.415)

2.87 (.113)

2.62 (.103)

15.24 (.600)

14.84 (.584)

14.09 (.555)

13.47 (.530)

1.40 (.055)

3X

1.15 (.045)

2.54 (.100)

NOTES:
1 DIM E N S IO NIN G & T O L E R A NC IN G P E R A NS I Y1 4. 5 M , 1 9 8 2 . 3 OU T LIN E C O N FO R M S T O JE D E C O U T L IN E T O -2 2 0 A B .
2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.

2X

10.29 (.405)

4

1 2 3

3.78 (.149)

3.54 (.139)

- A -

6.47 (.255)

6.10 (.240)

1.15 (.045)
M IN

4.06 (.160)

3.55 (.140)

0.93 (.037)

3X

0.69 (.027)

0.36 (.01 4) M B A M

TO-220AB Part Marking Information

EXAMPLE : THIS IS AN IRF1010
W ITH A SS EMBL Y
LO T COD E 9 B1 M

INTERN A TION A L
RE CTIFIER
L OGO

ASSEMBLY
LOT C ODE

4.69 (.185)

4.20 (.165)

- B -

1.32 (.052)

1.22 (.048)

3X

2.92 (.115)

2.64 (.104)

I RF1010

9246

9B 1M

LEAD ASSIGNMENTS
1 - GAT E
2 - DRA IN
3 - SOU RC E
4 - DRA IN

0.55 (.022)

0.46 (.018)

PART NUMB ER

DATE CODE
(YYWW)
YY = YEAR
WW = WEEK

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Data and specifications subject to change without notice. 10/00

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