Datasheet IRF1324PbF Datasheet

PD - 96199A

)

IRF1324PbF

HEXFET® Power MOSFET

Applications

l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits

Benefits

l Improved Gate, Avalanche and Dynamic dV/dt

G

D

V

DSS

R

DS(on

max.
I

D (Silicon Limited)

I

S

D

(Package Limited)

typ.

Ruggedness

l Fully Characterized Capacitance and Avalanche

SOA

l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free

TO-220AB

IRF1324PbF

GDS

Gate Drain Source

S

D

G

Absolute Maximum Ratings

Symbol Parameter Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)

I

@ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)

D

I

@ TC = 25°C Continuous Drain Current, VGS @ 10V (Wire Bond Limited)

D

I

DM

PD @TC = 25°C

V

GS

dv/dt Peak Diode Recovery
T

J

T

STG

Pulsed Drain Current

Maximum Power Dissipation W

Linear Derating Factor W/°C

Gate-to-Source Voltage V

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

d

f

Max.

353

c

249

c

195

1412

300

2.0

± 20

0.46

-55 to + 175

300

Avalanche Characteristics

E

AS (Thermally limited)

I

AR

E

AR

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

d

g

e

See Fig. 14, 15, 22a, 22b

270

Thermal Resistance

Symbol Parameter Typ. Max. Units

R

θJC

R

θCS

R

θJA

Junction-to-Case

Case-to-Sink, Flat Greased Surface 0.50 –––

Junction-to-Ambient

j

j

––– 0.50

––– 62

24V

1.2m

1.5m

353A

195A

V/ns

°C/W

:
:

c

A

°C

mJ

A

mJ

www.irf.com 1

09/24/09

IRF1324PbF

(BR)

g

Static @ TJ = 25°C (unless otherwise specified)

Symbol Parameter Min. Typ. Max. Units

V

(BR)DSS

V

∆

DSS

R

DS(on)

V

GS(th)

I

DSS

I

GSS

R

G

Dynamic @ TJ = 25°C (unless otherwise specified)

Symbol Parameter Min. Typ. Max. Units

gfs Forward Transconductance 180 ––– ––– S
Q

g

Q

gs

Q

gd

Q

sync

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

eff. (ER)

C

oss

eff. (TR)

C

oss

Diode Characteristics

Symbol Parameter Min. Typ. Max. Units

I

S

I

SM

V

SD

t

rr

Q

rr

I

RRM

t

on

Drain-to-Source Breakdown Voltage 24 ––– ––– V

/∆T

Breakdown Voltage Temp. Coefficient ––– 22 ––– mV/°C

J

Static Drain-to-Source On-Resistance ––– 1.2 1.5
Gate Threshold Voltage 2.0 ––– 4.0 V
Drain-to-Source Leakage Current ––– ––– 20 µA

––– ––– 250
Gate-to-Source Forward Leakage ––– ––– 200 nA
Gate-to-Source Reverse Leakage ––– ––– -200
Internal Gate Resistance ––– 2.3 –––

Total Gate Charge ––– 160 240
Gate-to-Source Charge ––– 84 –––
Gate-to-Drain ("Miller") Charge ––– 49 –––
Total Gate Charge Sync. (Qg - Qgd)

––– 76 –––
Turn-On Delay Time ––– 17 –––
Rise Time ––– 190 –––
Turn-Off Delay Time ––– 83 –––
Fall Time ––– 120 –––
Input Capacitance ––– 7590 –––
Output Capacitance ––– 3440 –––
Reverse Transfer Capacitance ––– 1960 –––
Effective Output Capacitance (Ener

y Related) ––– 4700 –––

Effective Output Capacitance (Time Related) ––– 4490 –––

Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)

d

––– –––

––– –––

353

1412

c

Diode Forward Voltage ––– ––– 1.3 V
Reverse Recovery Time ––– 46 –––

––– 71 –––
Reverse Recovery Charge ––– 160 –––

––– 430 –––
Reverse Recovery Current ––– 7.7 ––– A
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

VGS = 0V, ID = 250µA
Reference to 25°C, I

= 10V, ID = 195A

V

mΩ

GS

= VGS, ID = 250µA

V

DS

= 24V, VGS = 0V

V

DS

V

= 24V, VGS = 0V, TJ = 125°C

DS

VGS = 20V
VGS = -20V

Ω

VDS = 10V, ID = 195A

= 195A

I

D

= 12V

V

DS

nC

VGS = 10V
I

= 195A, VDS =0V, VGS = 10V

D

V

DD

= 195A

I

D

ns

R

= 2.7Ω

G

VGS = 10V
V

GS

g

= 16V

g

= 0V

VDS = 24V

pF

ƒ = 1.0 MHz, See Fig. 5

= 0V, VDS = 0V to 19V i, See Fig. 11

V

GS

= 0V, VDS = 0V to 19V

V

GS

MOSFET symbol
showing the

A

integral reverse
p-n junction diode.
T

= 25°C, IS = 195A, VGS = 0V

J

TJ = 25°C VR = 20V,

ns

= 125°C IF = 195A

T

J

TJ = 25°C

nC

= 125°C

T

J

TJ = 25°C

Conditions

= 5.0mA

D

g

Conditions

h

Conditions

di/dt = 100A/µs

d

D

G

S

g

g

Notes:

 Calcuted continuous current based on maximum allowable junction

temperature Bond wire current limit is 195A. Note that current
limitation arising from heating of the device leds may occur with
some lead mounting arrangements.

 Repetitive rating; pulse width limited by max. junction

temperature.

 Limited by T

RG = 25Ω, I

above this value .

 I

≤ 195A, di/dt ≤ 450 A/µs, V

SD

, starting TJ = 25°C, L = 0.014mH

Jmax

= 195A, VGS =10V. Part not recommended for use

AS

DD

≤ V

(BR)DSS

, TJ ≤ 175°C.

 Pulse width ≤ 400µs; duty cycle ≤ 2%.

 C

eff. (TR) is a fixed capacitance that gives the same charging time

oss

as C

 C

C

 R

while V

oss

eff. (ER) is a fixed capacitance that gives the same energy as

oss

while V

oss

is measured at TJ approximately 90°C

θ

is rising from 0 to 80% V

DS

is rising from 0 to 80% V

DS

DSS

DSS

.

.

2 www.irf.com

IRF1324PbF

10000

60µs PULSE WIDTH

)
A

(
t
n
e

r

r
u

C
e

c

r
u
o
S

­o

t

­n

i
a

r
D

,

D

I

1000

100

10

≤

Tj = 25°C

1

4.0V

TOP 15V

BOTTOM 4.0V

0.1

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

1000

)
A

(
t

100

n
e

r

r
u

C
e

c

r
u
o
S

­o

t

­n

i
a

r
D

,

D

I

10

1

TJ = 175°C

TJ = 25°C

V

= 15V

DS

≤

60µs PULSE WIDTH

0.1
2 3 4 5 6 7 8 9

VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

VGS

10V

8.0V

6.0V

5.5V

5.0V

4.5V

10000

VGS

10V

8.0V

6.0V

5.5V

5.0V

4.5V

)
A

(
t
n
e

r

1000

r
u

C
e

c

r
u
o
S

­o

t

-

100

n

i
a

r
D

,

D

I

60µs PULSE WIDTH

≤

Tj = 175°C

TOP 15V

BOTTOM 4.0V

4.0V

10

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

2.0

e
c
n
a

t
s

i
s
e

R
n
O
e

c

r
u
o
S

­o

t

­n

i
a

r
D

,

)
n
o

(
S
D

R

ID = 195A

V

= 10V

GS

1.5

)
d
e
z

i

l
a

m

r
o

N

(

1.0

0.5

-60 -40 -20 0 20 40 60 80 100120140160180

TJ , Junction Temperature (°C)

Fig 4. Normalized On-Resistance vs. Temperature

100000

)
F
p

(
e

c
n
a

t

i

10000

c
a
p
a

C
,

C

1000

V

= 0V, f = 1 MHZ

GS

C

= C

= C

= C

+ Cgd, C

gs

gd

+ C

ds

iss

C

rss

C

oss

C

iss

C

oss

C

rss

SHORTED

ds

gd

1 10 100

VDS, Drain-to-Source Voltage (V)

14.0
ID= 195A

12.0

)
V

(
e

g

10.0

a

t

l
o
V

e

8.0

c

r
u
o
S

-

6.0

o

t

­e

t
a

4.0

G
,

S
G

V

2.0

VDS= 19V

VDS= 12V

0.0
0 50 100 150 200

QG, Total Gate Charge (nC)

Fig 6. Typical Gate Charge vs. Gate-to-Source VoltageFig 5. Typical Capacitance vs. Drain-to-Source Voltage

www.irf.com 3

IRF1324PbF

1000

)
A

(
t
n
e

r

r

100

u
C
n

i
a

r
D
e

s

r
e
v

10

e
R

,

D
S

I

1.0

TJ = 175°C

TJ = 25°C

0.0 0.5 1.0 1.5

VSD, Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode

Forward Voltage

400

350

300

)
A

(
t

250

n
e

r

r
u

C

200

n

i
a

r

150

D

,

D

I

100

50

0

25 50 75 100 125 150 175

TC , Case Temperature (°C)

Limited By Package

Fig 9. Maximum Drain Current vs.

V

GS

= 0V

10000

OPERATION IN THIS AREA

)
A

(
t

1000

n
e

r

r
u

C
e

c

r
u

100

o
S

­o

t

­n

i
a

r
D
,

D

I

Limited by
package

10

Tc = 25°C
Tj = 175°C
Single Pulse

1

1 10 100

LIMITED BY RDS(on)

100µsec

1msec

10msec

DC

VDS, Drain-to-Source Voltage (V)

Fig 8. Maximum Safe Operating Area

)
V

(

32

e
g
a

t

l
o
V

n
w

o
d
k
a
e

r
B

e
c

r
u
o
S

­o

t

­n

i
a

r
D

,

S
S
D

)
R
B

(

V

Id = 5mA

30

28

26

24

-60 -40 -20 0 20 40 60 80 100120140160180

TJ , Temperature ( °C )

Fig 10. Drain-to-Source Breakdown Voltage

Case Temperature

2.0

1.8

1.6

1.4

)

1.2

J
µ

(
y

1.0

g

r
e
n

0.8

E

0.6

0.4

0.2

0.0

-5 0 5 10 15 20 25 30

V

Drain-to-Source Voltage (V)

DS,

Fig 11. Typical C

Stored Energy

OSS

1200

)
J

m

(
y

1000

g

r
e
n
E

e

800

h
c
n
a

l
a
v

600

A
e

s

l
u
P

400

e

l
g
n

i
S
,

200

S
A

E

0

25 50 75 100 125 150 175

Starting TJ , Junction Temperature (°C)

TOP 44A

BOTTOM 195A

I

D

83A

Fig 12. Maximum Avalanche Energy vs. DrainCurrent

4 www.irf.com

1

τ

W

/
C

°
)

Z
(

e
s
n
o
p
s
e

R
l
a

m

r
e
h
T

C
J
h

t

0.01

0.1

D = 0.50

0.20

0.10

0.05

0.02

0.01

SINGLE PULSE
( THERMAL RESPONSE )

τ

J

τ

J

τ

1

τ

1

Ci= τi/Ri

R

R

R

R

1

2

R

1

τ

2

τ

3

R

R

2

3

τ

3

τ

2

3

Ri (°C/W) τi (sec)

4

R

4

0.0125 0.000008

τ

C

τ

0.0822 0.000078

4

τ

4

0.2019 0.001110

0.2036 0.007197

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

0.001
1E-006 1E-005 0.0001 0.001 0.01 0.1

t1 , Rectangular Pulse Duration (sec)

IRF1324PbF

Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case

1000

Duty Cycle = Single Pulse

Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Tj = 150°C and

Tstart =25°C (Single Pulse)

)
A

(

100

t
n
e

r

r
u

C
e

h
c
n
a

l
a
v
A

0.05

0.10

10

0.01

Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Τ j = 25°C and

Tstart = 150°C.

1

1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01

tav (sec)

Fig 14. Typical Avalanche Current vs.Pulsewidth

www.irf.com 5

IRF1324PbF

300

TOP Single Pulse

250

)
J

m

(
y

g

200

r
e
n
E

e
h

150

c
n
a

l
a
v
A

100

,

R
A

E

50

BOTTOM 1.0% Duty Cycle
ID = 195A

0

25 50 75 100 125 150 175

Starting TJ , Junction Temperature (°C)

Fig 15. Maximum Avalanche Energy vs. Temperature

Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)

1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of T

2. Safe operation in Avalanche is allowed as long asT

3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.

4. P

D (ave)

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase

. This is validated for every part type.

jmax

is not exceeded.

jmax

= Average power dissipation per single avalanche pulse.

during avalanche).

6. I

= Allowable avalanche current.

av

7. ∆T = Allowable rise in junction temperature, not to exceed T

(assumed as

jmax

25°C in Figure 14, 15).
t

Average time in avalanche.

av =

D = Duty cycle in avalanche = t

(D, tav) = Transient thermal resistance, see Figures 13)

Z

thJC

P

D (ave)

·f

av

= 1/2 ( 1.3·BV·Iav) = DT/ Z

I

2DT/ [1.3·BV·Zth]

av =

E

= P

AS (AR)

D (ave)·tav

thJC

4.5

)
V

4.0

(
e

g
a

t

l

3.5

o
V

d

l
o

3.0

h
s
e

r
h

t
e

t
a

G
,

)
h

t

(
S
G

V

2.5

2.0

1.5

ID = 250µA

ID = 1.0mA

ID = 1.0A

1.0

-75 -50 -25 0 25 50 75 100 125 150 175 200

TJ , Temperature ( °C )

Fig 16. Threshold Voltage vs. Temperature

6 www.irf.com

IRF1324PbF

A





Reverse
Recovery
Current

Driver Gate Drive

D.U.T. ISDWaveform

D.U.T. VDSWaveform

Inductor Current

Inductor Curent

* V

GS

D.U.T

+

-

R

G

+



Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

-

• Low Leakage Inductance
Current Transformer



-

• dv/dt controlled by R

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

G

+

V

DD

Re-Applied
Voltage

+

-

Period

P.W.

Body Diode Forward

Current

di/dt

Diode Recovery

dv/dt

Body Diode Forward Drop

Ripple ≤ 5%

= 5V for Logic Level Devices

D =

P. W .

Period

VGS=10V

V

DD

I

SD

*

Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET® Power MOSFETs

V

15V

V

DS

L

DRIVER

t

p

(BR)DSS

R

G

V

20V

GS

Fig 22a. Unclamped Inductive Test Circuit

V

GS

R

G

10V

V

GS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

D.U.T

I

AS

Ω

0.01

t

p

+

V

DD

-

I

AS

Fig 22b. Unclamped Inductive Waveforms

R

V

DS

D

V

DS

90%

D.U.T.

+

V

DD

-

10%
V

GS

t

d(on)tr

t

d(off)tf

Fig 23a. Switching Time Test Circuit Fig 23b. Switching Time Waveforms

Current Regulator

Same Type as D.U.T.

.2µF

12V

V

GS

50KΩ

3mA

.3µF

D.U.T.

+

V

DS

-

Vds

Vgs(th)

Id

Vgs

I

G

Current Sampling Resistors

Fig 24a. Gate Charge Test Circuit

www.irf.com 7

I

D

Qgs1

Qgs2 Qgd Qgodr

Fig 24b. Gate Charge Waveform

IRF1324PbF

TO-220AB Package Outline

Dimensions are shown in millimeters (inches)

TO-220AB Part Marking Information

(;$03/( 7+,6,6$1,5)

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TO-220AB packages are not recommended for Surface Mount Application.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

,17(51$7,21$/

5(&7,),(5

/2*2

$66(0%/<
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Data and specifications subject to change without notice.

This product has been designed and qualified for the Industrial market.

Qualification Standards can be found on IR’s Web site.

3$57180%(5

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TAC Fax: [phone]

Visit us at www.irf.com for sales contact information. 09/2009

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