Datasheet IRF1310NS-L Datasheet (IOR)

查询IRF1310NL供应商

l Advanced Process Technology
l Surface Mount (IRF1310NS)
l Low-profile through-hole (IRF1310NL)
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated

Description

Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.

2

Pak is a surface mount power package capable of

The D
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on­resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRF1310NL) is available for low­profile applications.

Absolute Maximum Ratings

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 42
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 30 A
I

DM

PD @TA = 25°C Power Dissipation 3.8 W
PD @TC = 25°C Power Dissipation 160 W

V

GS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt  5.0 V/ns
T

J

T

STG

Thermal Resistance

R

θJC

R

θJA

PD - 91514B

IRF1310NS/L

HEXFET® Power MOSFET

D

V

=100V

DSS

G

R

S

2

D Pak

Parameter Max. Units

Pulsed Drain Current  140

Linear Derating Factor 1.1 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 420 mJ
Avalanche Current 22 A
Repetitive Avalanche Energy 16 mJ

Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )

Parameter Typ. Max. Units

Junction-to-Case ––– 0.95
Junction-to-Ambient ( PCB Mounted,steady-state)** –– – 40

TO-262

DS(on)

ID = 42A

= 0.036Ω

°C

°C/W

5/13/98

IRF1310NS/L

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

S

C

iss

C

oss

C

rss

(BR)DSS

Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.11 ––– V/°C Reference to 25°C, ID = 1mA

J

Static Drain-to-Source On-Resistance ––– ––– 0.036 Ω VGS = 10V, ID = 22A 
Gate Threshold Voltage 2 .0 ––– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 14 ––– ––– S VDS = 25V, ID = 22A

Drain-to-Source Leakage Current

––– ––– 25

––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100

VDS = 100V, VGS = 0V

µA

nA

VGS = -20V
Total Gate Charge ––– ––– 110 ID = 22A
Gate-to-Source Charge ––– ––– 15 nC VDS = 80V
Gate-to-Drain ("Miller") Charge ––– ––– 58 VGS = 10V, See Fig. 6 and 13 
Turn-On Delay Time ––– 11 ––– VDD = 50V
Rise Time ––– 56 ––– ID = 22A
Turn-Off Delay Time ––– 45 ––– RG = 3.6Ω

ns

Fall Time ––– 40 ––– RD = 2.9Ω, See Fig. 10 

Internal Source Inductance

––– –––

7.5

Between lead,

nH

and center of die contact
Input Capacitance ––– 1900 ––– VGS = 0V
Output Capacitance ––– 450 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 230 ––– ƒ = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

 Starting T

RG = 25Ω, I

 I

SD

TJ ≤ 175°C

** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended soldering techniques refer to application note #AN-994.

Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode) 

––– –––

––– –––

42

140

Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS =22A, VGS = 0V 
Reverse Recovery Time ––– 180 270 ns TJ = 25°C, IF = 22A
Reverse Recovery Charge ––– 1.2 1.8 µC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

 Pulse width ≤ 300µs; duty cycle ≤ 2%.

= 25°C, L = 1.7mH

J

= 22A. (See Figure 12)

AS

≤ 22A, di/dt ≤ 180A/µs, V

DD

≤ V

(BR)DSS

 Uses IRF1310N data and test conditions

,

showing the

A

p-n junction diode.



D

G

S

IRF1310NS/L

1000

100

10

D

I , Drain-to-Source Current (A)

1

0.1 1 10 100

1000

VGS

TOP

15V
10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM

4.5V

4.5V

20us PULSE WIDTH
T = 25 C

J

V , Drain-to-Source Voltage (V)

DS

o

1000

100

10

D

I , Drain-to-Source Current (A)

1

0.1 1 10 100

VGS

TOP

15V
10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM

4.5V

4.5V

20us PULSE WIDTH
T = 175 C

J

V , Drain-to-Source Voltage (V)

DS

o

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

3.0

I =

D

36A

100

10

D

I , Drain-to-Source Current (A)

o

T = 25 C

J

o

T = 175 C

J

VDS= 50V
20µS PULSE WIDTH

1

4.0 5.0 6.0 7.0 8.0 9.0 10.0

V , Gate-to-Source Voltage (V)

GS

Fig 3. Typical Transfer Characteristics

2.5

2.0

1.5

(Normalized)

1.0

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

T , Junction Temperature ( C)

J

Fig 4. Normalized On-Resistance

Vs. Temperature

V =

GS

o

10V

IRF1310NS/L

gsg

3500

3000

2500

2000

1500

C, Capacitance (pF)

1000

500

0

1 10 100

V

=

0V,

GS

C

=

iss

C

=

rssgd

C

=

oss dsgd

C

iss

C

oss

C

rss

V , Drain-to-Source Voltage (V)

DS

f = 1MHz

C

+ C

C SHORTED
C
C

d , ds

+ C

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

1000

20

I =

22A

D

16

12

8

4

GS

V , Gate-to-Source Voltage (V)

V = 80V

DS

V = 50V

DS

V = 20V

DS

FOR TEST CIRCUIT

0

0 20 40 60 80 100 120

Q , Total Gate Charge (nC)

G

SEE FIGURE

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

1000

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

13

100

10

1

SD

I , Reverse Drain Current (A)

V = 0 V

0.1

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

V ,Source-to-Drain Voltage (V)

SD

GS

Fig 7. Typical Source-Drain Diode

Forward Voltage

100

10

D

I , Drain Current (A)I , Drain Current (A)

o

= 25 C

C

T T= 175 C
Single Pulse

1

1 10 100 1000

o

J

V , Drain-to-Source Voltage (V)

DS

10us

100us

1ms

10ms

Fig 8. Maximum Safe Operating Area

IRF1310NS/L

50

40

30

20

D

I , Drain Current (A)

10

0

25 50 75 100 125 150 175

T , Case Temperature ( C)

C

°

Fig 9. Maximum Drain Current Vs.

Case Temperature

10

R

V

DS

V

GS

R

G

D

D.U.T.

10V

Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

V

DS

90%

10%
V

GS

t

d(on)tr

t

d(off)tf

Fig 10b. Switching Time Waveforms

+

V

DD

-

thJC

1

D = 0.50

0.20

0.10

0.1

0.05

Thermal Response (Z )

0.01

0.02

0.01

0.00001 0.0001 0.001 0.01 0.1 1

SINGLE PULSE

(THERMAL RESPONSE)

Notes:

1. Duty factor D = t / t

2. Peak T =P x Z + T

t , Rectangular Pulse Duration (sec)

1

J DM thJC C

1 2

P

DM

t

1

t

2

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

IRF1310NS/L

A

15V

DRIVER

+

-

R

20V

V

DS

G

t

L

D.U.T

I

AS

Ω

0.01

p

Fig 12a. Unclamped Inductive Test Circuit

V

(BR)DSS

t

p

I

AS

1000

TOP

I

D

9.0A
16A

800

600

V

DD

400

200

AS

E , Single Pulse Avalanche Energy (mJ)

0

25 50 75 100 125 150 175

Starting T , Junction Temperature ( C)

J

BOTTOM

22A

o

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Fig 12b. Unclamped Inductive Waveforms

Q

G

10 V

Q

GS

V

G

Q

GD

Charge

Fig 13a. Basic Gate Charge Waveform

Current Regulator

Same Type as D.U.T.

50KΩ

12V

.2µF

V

GS

.3µF

D.U.T.

3mA

I

G

Current Sampling Resistors

I

D

Fig 13b. Gate Charge Test Circuit

+

V

DS

-

IRF1310NS/L

Peak Diode Recovery dv/dt Test Circuit

Peak Diode Recovery dv/dt Test Circuit





D.U.T

+

-

R

G

Driver Gate Drive

P.W.

+

Circuit Layout Considerations

• Low Stray Inductance



• Ground Plane

• Low Leakage Inductance
Current Transformer

-

-

• dv/dt controlled by R

• Driver same type as D.U.T.

G

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

Period

D =

Period



P.W.

+

+

V

DD

-

VGS=10V

*

Reverse
Recovery
Current

Re-Applied
Voltage

D.U.T. ISDWaveform

Body Diode Forward

D.U.T. VDSWaveform

Body Diode Forward Drop

Inductor Curent

Ripple ≤ 5%

* V

= 5V for Logic Level Devices

GS

Fig 14. For N-Channel HEXFETS

Current

di/dt

Diode Recovery

dv/dt

V

DD

I

SD

IRF1310NS/L

A

D2Pak Package Outline

10.54 (.415)

1.40 (.055)
MAX.

1.78 (.070)

1.27 (.050)

1.40 (.055)

3X

1.14 (.045)

5.08 (.200)

NOTE S:
1 DIMENSIONS AFTER SOLDER DIP.
2 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
3 CONTROLLING DIMENSION : INCH.
4 HEATSINK & LEAD DIMENSIONS DO NOT INCLUDE BURRS.

10.29 (.405)

- A ­2

1 3

15.49 (.610)

14.73 (.580)

0.93 (.037)

3X

0.69 (.027)

0.2 5 ( .0 10) M B A M

Part Marking Information

D2Pak

4.69 (.185)

4.20 (.165)

5.28 (.208)

4.78 (.188)

0.55 (.022)

0.46 (.018)

- B -

1.32 (.052)

1.22 (.048)

2.79 (.110)

2.29 (.090)

1.39 (.055)

1.14 (.045)

LEAD ASSIGNMENTS
1 - G ATE
2 - D RAIN
3 - S OU R CE

10.16 (.400)
REF.

6.47 (.255)

6.18 (.243)

2.61 (.103)

2.32 (.091)

8.89 (.350)
REF.

MINIMUM RECOMMENDED FOOTPRINT

11.43 (.450)

8.89 (.350)

17.78 (.700)

3.81 (.150)

2.08 (.082)
2X

2.54 (.100)
2X

INTERNATIONAL
RE CTIFIE R
LO G O

A S SEMBLY
LO T CO D E

F530S

9246

9 B 1 M

PART NUM B ER

DATE CODE
(YYW W )
YY = YEAR
WW = WEEK

Package Outline

TO-262 Outline

IRF1310NS/L

Part Marking Information

TO-262

IRF1310NS/L

Tape & Reel Information

D2Pak

TRR

1.60 (.063)

1.50 (.059)

4.10 (.161)

3.90 (.153)

1.60 (.063)

1.50 (.059)

0.368 (.0145)

0.342 (.0135)

FEED D IRECTION

1.85 (.073)

1.65 (.065)

TRL

10.90 (.429)

10.70 (.421)

FEED DIRECTION

13.50 (.532)

12.80 (.504)

330.00
(14.173)
MAX.

NOTES :

1. COM FO R M S TO E IA-418.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION MEASURED @ HU B.

4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

11.60 (.457)

11.40 (.449)

1.75 (.069)

1.25 (.049)

16.10 (.634)

15.90 (.626)

15.42 (.609)

15.22 (.601)

27.40 (1.079)

23.90 (.941)

4

26.4 0 (1.039)

24.40 (.961 )

3

24.30 (.957)

23.90 (.941)

4.72 (.136)

4.52 (.178)

60.00 (2.362)
MIN.

30.40 (1.197)
MAX .

4

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http://www.irf.com/ Data and specifications subject to change without notice. 5/98