Datasheet IR51HD320 Datasheet (International Rectifier)

Data Sheet No. PD-6.067B

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IR51HD320

SELF-OSCILLATING HALF-BRIDGE

Features

Output Power MOSFETs in half-bridge configuration

n

400V Rated Breakdown Voltage

High side gate drive designed for bootstrap operation

n

Bootstrap diode integrated into package

n

Accurate timing control for both Power MOSFETs

n

Matched delay to get 50% duty cycle
Matched deadtime of 1.2us

Internal oscillator with programmable frequency

n

f =

14 R 75 C

. × ( ) × Ω

Zener clamped Vcc for offline operation

n

Half-bridge output is out of phase with R

n

1

TT

+

T

Description

The IR51HD320 is a high voltage, high speed, self­oscillating half-bridge. Proprietary HVIC and latch
immune CMOS technologies, along with the
HEXFET® power MOSFET technology, enable
ruggedized single package construction. The front-end
features a programmable oscillator which functions
similar to the CMOS 555 timer. The supply to the
control circuit has a zener clamp to simplify offline
operation. The output features two HEXFETs in a
half-bridge configuration with an internally set
deadtime designed for minimum cross-conduction in
the half-bridge. Propagation delays for the high and
low side power MOSFETs are matched to simplify use
in 50% duty cycle applications. The device can
operate up to 400 volts.

Product Summary

V

(max) 400V

IN

Duty Cycle 50%
Deadtime 1.2µs
R

DS(on

PD (TA = 25 ºC) 2.0W

Package

IR51HD320

9506

1.8ΩΩ

Typical Connection

UP TO 400V DC BUS

V

IN

COM

RT

CT

IR 51HD 320

1

V

CC

2

R

T

3

C

T

4

COM

6

V

B

9

V

IN

7

VO

TO LO A D

IR51HD320

Min.

-0.3

-0.3

-0.3

-0.3

-0.3

---

-5

---

---

---

-55

-55

---

Min.

VO + 10

---

-5

---

---

---

-40

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Absolute Maximum Ratings

Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All
voltage parameters are absolute voltages referenced to COM, all currents are defined positive into any lead.
The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still air
conditions.

Parameter

Symbol Definition

V

IN

V

B

VO Half-Bridge Output Voltage
V

RT

V

CT

I

CC

I

RT

dv/dt Peak Diode Recovery dv/dt
P

D

R

θJA

T

J

T

S

T

L

High Voltage Supply
High Side Floating Supply Absolute Voltage

RT Voltage
CT Voltage
Supply Current (Note 1)
RT Output Current

Package Power Dissipation @ TA ≤ +25ºC
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Lead Temperature (Soldering, 10 seconds)

Max. Units

400
425

VIN + 0.3 V
VCC + 0.3
VCC + 0.3

25 mA

5

4.0 V/ns

2.00 W
60 ºC/W

150
150 ºC
300

Recommended Operating Conditions

The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used
within the recommended conditions.

Parameter

Symbol Definition

V

B

V

IN

VO Half-Bridge Output Voltage
I

D

I

CC

T

A

Note 1: Because of the IR51HD320's application specificity toward off-line supply systems, this IC contains a

High Side Floating Supply Absolute Voltage
High Voltage Supply

Continuous Drain Current

(T

= 25ºC)

A

(TA = 85ºC)
Supply Current (Note 1)
Ambient Temperature

zener clamp structure between the chip V

and COM which has a nominal breakdown voltage of

CC

15.6V. Therefore, the IC supply voltage is normally derived by current feeding the V
(typically by means of a high value resistor connected between the chip V
voltage and a local decoupling capacitor from V

to COM) and allowing the internal zener clamp

CC

circuit to determine the nominal supply voltage. Therefore, this circuit should not be driven by a DC,
low impedance power source of greater than V

CLAMP

.

Max. Units

VO + V

CC

CLAMP

400 V
400

0.9 A

0.6
5mA

125 ºC

CC

and the rectified line

lead

Dynamic Electrical Characteristics

TA = 25ºC

Typ.

270

g

1.4

1.2

50

Units

g

V

g

µA

V

µA

kHz

µA

mV

V

)

Ω

V

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V

(VCC, VB) = 12V unless otherwise specified.

BIAS

Parameter

Symbol Definition Min.

t

rr Reverse Recovery Time (MOSFET Body Diode) ---

Q

rr Reverse Recovery Char

DT Deadtime, LS Turn-Off to HS Turn-On &

HS Turn-Off to LS Turn-On

DR

Duty Cycle ---

T

e (MOSFET Body Diode) ---

---

Static Electrical Characteristics

V

(VCC, VB) = 12V unless otherwise specified.

BIAS

Parameter TA = 25ºC

Symbol Definition Min. Typ. Max.

Supply Characteristics

+

V

CCUV

VCC Supply Undervoltage Positive Goin
Threshold

-

V

CCUV

VCC Supply Undervoltage Negative Goin
Threshold

I

QCC

V

CLAMPVCC

Quiescent VCC Supply Current --- 300 ---

Zener Shunt Clamp Voltage --- 15.6 ---

Floating Supply Characteristics

I

QBS

I

OS

Quiescent VBS Supply Current --- 30 --­Offset Supply Leakage Current--- --- 50 V

Oscillator I/O Characteristics

f

OSC

I

CT

V
V

V

V
V
V

CTUV
RT

RT

RTUV
CT
CT

Oscillator Frequency --- 20 ---

CT Input Current --- 0.001 1.0
CT Undervoltage Lockout --- 100 --- 2.5V < V

+

RT High Level Output Voltage, VCC - R

-

RT Low Level Output Voltage ---20--- IRT = 100 µA

RT Undervoltage Lockout, VCC - R

+

2/3 VCC Threshold --- 8.0 ---

-

1/3 VCC Threshold --- 4.0 ---

Output Characteristics

R
V

DS(on

SD

Static Drain-to-Source On-Resistance --- 1.8 --­Diode Forward Voltage --- 0.7 ---

T

T

--- 8.4 ---

--- 8.0 ---

--- 100 ---

---20--- IRT = -100 µA

--- 200 ---

--- 200 --- IRT = 1 mA

--- 100 --- 2.5V < VCC < V

IR51HD320

Max. Units Test Conditions

--- ns IF = 900mA

--- µC di/dt = 100A/µs

--- µs

--- % f

Test Conditions

= 20 kHz

OSC

ICC = 5 mA

= VIN = 400V

B

RT = 35.7 kΩ,

= 1 nF

C

T

R

= 7.04 kΩ,

T

= 1 nF

C

T

< V

CC

CCUV

IRT = -1 mA

CCUV

ID = 900 mA

Tj = 150 ºC

+

+

IR51HD320

7

g

g

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Functional Block Diagram

V

B

6

1

V

CC

2

R

T

3

C

T

IR2151 VO

IRFC320

IRFC320

Lead Definitions

Lead

Symbol Description

V

CC

R

T

C

T

Logic and internal gate drive supply voltage. An internal zener clamp diode at 15.6 V nominal is
included to allow the Vcc to be current fed directly from V
resistor.
Oscillator timing resistor input; a resistor is connected from RT to CT. RT is out of phase with
the half-brid

e output (VO).

Oscillator timing capacitor output; a capacitor is connected from CT to COM in order to program
the oscillator frequency accordin

to the following equation:

f =

14 R 75 C

. × ( ) × Ω

1

TT

+

+

V

9

4

COM

typically by means of a high value

IN

where 75Ω is the effective impedance of the R

V

B

High side gate drive floating supply. For bootstrap operation a high voltage fast recovery diode is
needed to feed from V

V

IN

High voltage supply.
VO Half-bridge output.
COM Logic and low side of half-bridge return.

output stage.

T

to VB.

CC

Lead Assignments

B

6

R

T

50%

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IR51HD320

V

VO

CC

97

V

IN

V

R C COM V

CC

TT

9 Lead SIP w/o Leads 5 & 8

4321

V0

IR51HD320

V

+

CCUV

R

T

C

T

V

CLAMP

50%

90%

HIGH
SIDE

+

V

LOW

10%

DT

90%

SIDE

0

10%

Figure 1. Input/Output Timing Diagram Figure 2. Deadtime Waveform Definitions

IR51HD320

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© 1996 International Rectifier Printed in U.S.A. 3-96