Datasheet IR2155PBF Specification

(NOTE: For new designs, we recommend IR’s new products

SELF-OSCILLATING HALF-BRIDGE DRIVER

Features

Floating channel designed for bootstrap operation

•

Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
Undervoltage lockout

•

Programmable oscillator frequency

•

f =

1.4 (R 150 ) C

Matched propagation delay for both channels

•

Micropower supply startup current of 125 µA typ.

•

Low side output in phase with R

•

• Available in Lead-Free

Description

The IR2155 is a high voltage, high speed, self­oscillating power MOSFET and IGBT driver with both
high and low side referenced output channels. Pro­prietary HVIC and latch immune CMOS technolo­gies enable ruggedized monolithic construction.
The front end features a programmable oscillator
which is similar to the 555 timer. The output drivers
feature a high pulse current buffer stage and an in­ternal deadtime designed for minimum driver cross­conduction. Propagation delays for the two
channels are matched to simplify use in 50% duty
cycle applications. The floating channel can be
used to drive an N-channel power

Typical Connection

1

×+ ×

Ω

TT

T

Data Sheet No. PD60029 revJ

IR2155&(PbF)

IR2153 and IR21531)

Product Summary

V

OFFSET

Duty Cycle 50%

IO+/ - 210 mA / 420 mA

V

OUT

Deadtime (typ.) 1.2 µs

Package

8 Lead PDIP

MOSFET or IGBT in the high side configuration that
operates off a high voltage rail up to 600 volts.

up to 600V

600V max.

10 - 20V

V

CC

R

T

C

T

(Refer to Lead Assignment diagram for correct pin configuration)

V

HO

V

LOCOM

B

S

TO

LOAD

www.irf.com 1

IR2155&(PbF)

Absolute Maximum Ratings

Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage param­eters are absolute voltages referenced to COM. The Thermal Resistance and Power Dissipation ratings are measured
under board mounted and still air conditions.

Parameter Value

Symbol Definition Min. Max. Units

V

B

V

S

V

HO

V

LO

V

RT

V

CT

I

CC

I

RT

dVs/dt Allowable Offset Supply Voltage T ransient — 50 V/ns

P

D

R

θJA

T

J

T

S

T

L

High Side Floating Supply Voltage -0.3 625
High Side Floating Supply Offset Voltage VB - 25 VB + 0.3
High Side Floating Output Voltage VS - 0.3 V
Low Side Output Voltage -0.3 VCC + 0.3
RT V oltage -0.3 VCC + 0.3
CT Voltage -0.3 V
Supply Current (Note 1) — 25
RT Output Current -5 5

Package Power Dissipation @ TA ≤ +25°C (8 Lead DIP) — 1.0

(8 Lead SOIC) — 0.625

Thermal Resistance, Junction to Ambient (8 Lead DIP) — 125

(8 Lead SOIC) — 200
Junction T emperature — 150
Storage T emperature -55 150 °C
Lead Temperature (Soldering, 10 seconds) — 300

CC

B

+ 0.3

+ 0.3

mA

°C/W

V

W

Recommended Operating Conditions

The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the
recommended conditions. The VS offset rating is tested with all supplies biased at 15V differential.

Parameter Value

Symbol Definition Min. Max. Units

V

B

V

S

V

HO

V

LO

I

CC

T

A

Note 1: Because of the IR2155’s application specificity toward off-line supply systems, this IC contains a zener clamp

2 www.irf.com

High Side Floating Supply Absolute Voltage VS + 10 VS + 20
High Side Floating Supply Offset Voltage — 600
High Side Floating Output Voltage V
Low Side Output Voltage 0 V
Supply Current (Note 1) — 5 mA
Ambient T emperature -40 125 °C

structure between the chip VCC and COM which has a nominal breakdown voltage of 15.6V. Therefore, the IC
supply voltage is normally derived by forcing current into the supply lead (typically by means of a high value
resistor connected between the chip VCC and the rectified line voltage and a local decoupling capacitor from
VCC to COM) and allowing the internal zener clamp circuit to determine the nominal supply voltage. There­fore, this circuit should not be driven by a DC, low impedance power source of greater than V

S

V

B

CC

CLAMP

V

.

IR2155&(PbF)

Dynamic Electrical Characteristics

V

(VCC, VBS) = 12V, CL = 1000 pF and TA = 25°C unless otherwise specified.

BIAS

Parameter Value

Symbol Definition Min. Typ. Max. Units T est Conditions

t
t

DT Deadtime 0.50 1.20 2.25 µs

DR

Static Electrical Characteristics

V

(VCC, VBS) = 12V, CL = 1000 pF, CT = 1 nF and TA = 25°C unless otherwise specified. The VIN, VTH and I

BIAS

parameters are referenced to COM. The VO and IO parameters are referenced to COM and are applicable to the
respective output leads: HO or LO.

Symbol Definition Min. Typ. Max. Units T est Conditions

f

OSC

V

CLAMP

V

CT+

V

CT-

V

CTUV

V

RT+

V

RT-

V

RTUV

V

OH

V

OL

I

LK

I

QBS

I

QBSUV

I

QCC

I

QCCUV

I

CT

V

BSUV+

V

BSUV-

V

BSUVH

V

CCUV+

V

CCUV-

V

CCUVH

I

O+

I

O-

Turn-On Rise Time — 80 120

r

Turn-Off Fall Time — 40 70

r

Duty Cycle 48 50 52 %

T

ns

Parameter Value

Oscillator Frequency 19.4 20.0 20.6 RT = 35.7 kΩ

94 100 106 RT = 7.04 kΩ
VCC Zener Shunt Clamp Voltage 14.4 15.6 16.8 ICC = 5 mA
2/3 VCC Threshold 7.8 8.0 8.2 V
1/3 VCC Threshold 3.8 4.0 4.2
CT Undervoltage Lockout — 20 50 2.5V < V
RT High Level Output Voltage, VCC - R

T

— 0 100 IRT = -100 µA
— 200 300 IRT = -1 mA

RT Low Level Output Voltage — 20 50 IRT = 100 µA

— 200 300 IRT = 1 mA
RT Undervoltage Lockout, VCC - R
High Level Output Voltage, V
Low Level Output Voltage, V

BIAS

O

- V

T

O

— 0 100 2.5V < V

— — 100 IO = 0A

— — 100 IO = 0A
Offset Supply Leakage Current — — 50 VB = VS = 600V
Quiescent VBS Supply Current — 70 150
Micropower VBS Supply Startup Current — 55 1 25
Quiescent VCC Supply Current — 500 1000
Micropower VCC Supply Startup Current — 70 150
CT Input Current — 0.001 1.0
VBS Supply Undervoltage Positive Going 7.7 8.4 9.2
Threshold
VBS Supply Undervoltage Negative Going 7.3 8.1 8.9
Threshold
VBS Supply Undervoltage Lockout Hysteresis 100 400 — mV
VCC Supply Undervoltage Positive Going 7.7 8.4 9.2
Threshold
VCC Supply Undervoltage Negative Going 7.4 8.1 8.9
Threshold
VCC Supply Undervoltage Lockout Hysteresis 200 400 — mV
Output High Short Circuit Pulsed Current 210 250 — VO = 0V
Output Low Short Circuit Pulsed Current 4 20 500 — VO = 15V

kHz

mV

µA

V

V

mA

CC

CC

IN

< V

< V

CCUV

CCUV

www.irf.com 3

IR2155&(PbF)

R

Functional Block Diagram

R

T

­RQ

+

SQ

R

C

T

Lead Definitions

Lead

Symbol Description

R

T

C

T

V

B

HO High side gate drive output
V

S

V

CC

LO Low side gate drive output
COM Low side return

Oscillator timing resistor input,in phase with LO for normal IC operation
Oscillator timing capacitor input, the oscillator frequency according to the following equation:

where 150Ω is the effective impedance of the RT output stage
High side floating supply

High side floating supply return
Low side and logic fixed supply

-

+

UV

DETECT

R

f =

×+ ×

1.4 (R 150 ) C

DETECT

HV

LEVEL

PULSE

SHIFT

FILTER

PULSE

DEAD

TIME

GEN

DEAD
TIME

1

Ω

TT

UV

DELAY

R
R
S

15.6V

V

B

Q

HO

V

S

V

CC

LO

COM

Lead Assignments

8 Lead DIP

4 www.irf.com

IR2155

IR2155&(PbF)

8 Lead PDIP

01-3003 01

www.irf.com 5

IR2155&(PbF)

V

V

+

CCUV

V

CC

R

T

C

T

HO

LO

Figure 1. Input/Output Timing Diagram Figure 2. Switching Time Waveform Definitions

R

T

50%

CLAMP

50%

R

T

R

T

LO
HO

(HO)

(LO)

50%

t

r

50%

90% 90%

10% 10%

t

f

90%

HO

10%

DT

LO

90%

10%

Figure 3. Deadtime Waveform Definitions

6 www.irf.com

IR2155&(PbF)

Basic Part (Non-Lead Free)

Lead-Free Part

ORDER INFORMATION

8-Lead PDIP IR2155 order IR2155 8-Lead PDIP IR2155 order IR2155PbF

This product has been designed and qualified for the Industrial market.

Qualification Standards can be found on IR’s Web Site.

Data and specifications subject to change without notice.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: [phone]

TAC Fax: [phone]

Visit us at www.irf.com for sales contact information.

09/08/04

www.irf.com 7