Datasheet IR21531PBF, IR2153SPBF Specification

Data Sheet No. PD60062 revO

(NOTE:For new designs, we recommend

IR’s new product IRS2153D)

IR2153(D)(S) &( PbF)

SELF-OSCILLATING HALF-BRIDGE DRIVER

Features

Integrated 600V half-bridge gate driver

•

15.6V zener clamp on Vcc

•

True micropower start up

•

Tighter initial deadtime control

•

Low temperature coefficient deadtime

•

Shutdown feature (1/6th Vcc) on CT pin

•

Increased undervoltage lockout Hysteresis (1V)

•

Lower power level-shifting circuit

•

Constant LO, HO pulse widths at startup

•

Lower di/dt gate driver for better noise immunity

•

Low side output in phase with RT

•

Internal 50nsec (typ.) bootstrap diode (IR2153D)

•

Excellent latch immunity on all inputs and outputs

•

ESD protection on all leads

•

Also available LEAD-FREE

•

Product Summary

V

OFFSET

Duty Cycle 50%

Tr/T

p

V

clamp

Deadtime (typ.) 1.2 µs

600V max.

80/40ns

Packages

15.6V

Description

The IR2153D(S) are an improved version of the
popular IR2155 and IR2151 gate driver ICs, and incor­porates a high voltage half-bridge gate driver with a front end oscillator similar to the industry standard CMOS
555 timer. The IR2153 provides more functionality and is easier to use than previous ICs. A shutdown feature
has been designed into the CT pin, so that both gate driver outputs can be disabled using a low voltage control
signal. In addition, the gate driver output pulse widths are the same once the rising undervoltage lockout
threshold on VCC has been reached, resulting in a more stable profile of frequency vs time at startup.
Noise immunity has been improved significantly, both by lowering the peak di/dt of the gate drivers, and by
increasing the undervoltage lockout hysteresis to 1V. Finally, special attention has been payed to maximizing
the latch immunity of the device, and providing comprehensive ESD protection on all pins.

8 Lead PDIP

8 Lead SOIC

T ypical Connections

VCC

RT

CT

COM

IR2153D

VB

HO

VS

LO

600V
MAX

IR2153(S)

VB

VCC

HO

VS

RT

LO

CT

Shutdown

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COM

600V
MAX

Shutdown

IR2153(D)(S) & ( PbF)

NOTE:For new designs, we recommend
IR’s new product IRS2153D

Absolute Maximum Ratings

Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param­eters are absolute voltages referenced to COM, all currents are defined positive into any lead. The thermal resistance and
power dissipation ratings are measured under board mounted and still air conditions.

Symbol Definition Min. Max. Units

V

B

V

S

V

HO

V

LO

V

RT

V

CT

I

CC

I

RT

dVs/dt Allowable offset voltage slew rate -50 50 V/ns

P

D

Rth

JA

T

J

T

S

T

L

High side floating supply voltage -0.3 625
High side floating supply offset voltage VB - 25 VB + 0.3
High side floating output voltage VS - 0.3 V
Low side output voltage -0.3 VCC + 0.3
RT pin voltage -0.3 VCC + 0.3
CT pin voltage -0.3 V
Supply current (note 1) — 25
RT pin current -5 5

Maximum power dissipation @ TA ≤ +25°C (8 Lead DIP) — 1.0

(8 Lead SOIC) — 0.625

Thermal resistance, junction to ambient (8 Lead DIP) — 125

(8 Lead SOIC) — 200
Junction temperature -55 150
Storage temperature - 55 150 °C
Lead temperature (soldering, 10 seconds) — 300

B

CC

+ 0.3

+ 0.3

°C/W

V

mA

W

Recommended Operating Conditions

For proper operation the device should be used within the recommended conditions.

Symbol Definition Min. Max. Units

V

Bs

V

S

V

CC

I

CC

T

J

Note 1: This IC contains a zener clamp structure between the chip VCC and COM which has a nominal breakdown

Note 2: Care should be taken to avoid output switching conditions where the VS node flies inductively below ground by
Note 3: Enough current should be supplied to the VCC pin of the IC to keep the internal 15.6V zener diode clamping the

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High side floating supply voltage VCC - 0.7 V
Steady state high side floating supply offset voltage -3.0 (note 2) 600
Supply voltage 10 V
Supply current (note 3) 5 mA
Junction temperature -40 125 °C

voltage of 15.6V. Please note that this supply pin should not be driven by a DC, low impedance power source
greater than the V

more than 5V.
voltage at this pin.

specified in the Electrical Characteristics section.

CLAMP

CLAMP

V

CLAMP

IR2153(D)(S) & ( PbF)

NOTE:For new designs, we recommend

Recommended Component V alues

Symbol Component Min. Max. Units

R

T

C

T

1000000

100000

Timing resistor value 10 — kΩ
CT pin capacitor value 330 — pF

IR2153 RT vs Frequency

IR’s new product IRS2153D

10000

1000

Frequency (Hz)

100

10

10 100 1000 10000 100000 1000000

330pf
470pF
1nF

2.2nF

4.7nF
10nF

CT Values

RT (ohms)

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IR2153(D)(S) & ( PbF)

NOTE:For new designs, we recommend
IR’s new product IRS2153D

Electrical Characteristics

V

(VCC, VBS) = 12V, CL = 1000 pF, CT = 1 nF and TA = 25°C unless otherwise specified. The VIN, VTH and I

BIAS

parameters are referenced to COM. The VO and IO parameters are referenced to COM and are applicable to the
respective output leads: HO or LO.

Low Voltage Supply Characteristics

Symbol Definition Min. Typ. Max. Units Test Conditions

V

CCUV+

V

CCUV-

V

CCUVHVCC

I

QCCUV

I

QCC

V

CLAMPVCC

Rising VCC undervoltage lockout threshold 8.1 9.0 9.9
Falling VCC undervoltage lockout threshold 7.2 8.0 8.8

undervoltage lockout Hysteresis 0.5 1.0 1.5
Micropower startup VCC supply current — 75 150 V
Quiescent VCC supply current — 500 950

zener clamp voltage 14.4 15.6 16.8 V ICC = 5mA

V

μA

CC

Floating Supply Characteristics

Symbol Definition Min. Typ . Max. Unit s Test Conditions

I

QBSUV

I

QBS

V

BSMIN

I

LK

VF Bootstrap diode forward voltage (IR2153D) 0.5 — 1.0 V IF = 250mA

Micropower startup VBS supply current — 0 10 V

Quiescent VBS supply current — 30 50
Minimum required VBS voltage for proper — 4.0 5.0 V VCC=V
functionality from RT to HO
Offset supply leakage current — — 50 μAV

μA

CC

B

IN

≤

V

CCUV-

≤

V

CCUV-

+ 0.1V

CCUV+

= VS = 600V

Oscillator I/O Characteristics

Symbol Definition Min. Typ. Max. Units Test Conditions

f

osc

d RT pin duty cycle 48 50 52 % fo < 100kHz
ICT CT pin current
I

CTUV

V

CT+

V

CT-

V

CTSDCT

V

RT+

V

RT-

V

RTUV

V

RTSD

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Oscillator frequency 19.4 20 20.6 RT = 36.9kΩ

94 100 106 RT = 7.43kΩ

—

0.001 1.0 uA
UV-mode CT pin pulldown current 0.30 0.70 1.2 mA VCC = 7V
Upper CT ramp voltage threshold
Lower CT ramp voltage threshold

voltage shutdown threshold 1.8 2.1 2.4

High-level RT output voltage, VCC - V

Low-level RT output voltage

UV-mode RT output voltage
SD-Mode RT output voltage, VCC - V

RT

RT

—

8.0

— 4.0 —

— 10 50 IRT = 100μA
— 100 300 IRT = 1mA
— 10 50 IRT = 100μA
— 100 300 IRT = 1mA
— 0 100 V
— 10 50 IRT = 100μA,

— 10 300 IRT = 1mA,

—

kHz

V

mV

≤

V

CC

VCT = 0V

VCT = 0V

CCUV-

IR2153(D)(S) & ( PbF)

NOTE:For new designs, we recommend

Electrical Characteristics (cont.)

Gate Driver Output Characteristics

Symbol Definition Min. Typ. Max. Units Test Conditions

VOH High level output voltage, V
VOL Low-level output voltage, VO — 0 100 IO = OA
VOL_UV UV-mode output voltage, VO — 0 10 0 IO = OA

t

r

t

f

t

sd

t

d

Output rise time — 80 1 50
Output fall time — 45 100
Shutdown propogation delay — 660 —
Output deadtime (HO or LO) 0.75 1.20 1.65 μsec

BIAS

-V

O

— 0 100 IO = OA

Lead Definitions

Symbol Description

V

CC

R

T

C

T

CO M IC power and signal ground
LO Low side gate driver output
V

S

H O High side gate driver output
V

B

Logic and internal gate drive supply voltage
Oscillator timing resistor input
Oscillator timing capacitor input

High voltage floating supply return

High side gate driver floating supply

IR’s new product IRS2153D

mV

V

≤

V

CC

CCUV-

nsec

Lead Assignments

8 Lead PDIP 8 Lead SOIC

IR2153D IR2153(S)

NOTE: The IR2153D is offered in 8 lead PDIP only.

www.irf.com 5

IR2153(D)(S) & ( PbF)

NOTE:For new designs, we recommend
IR’s new product IRS2153D

Functional Block Diagram for IR2153(S)

R

T

R

+

-

R

RQ

+

S

R/2

C

T

R/2

-

+

-

Q

LOGIC

DEAD

TIME

PULSE

DEAD
TIME

GEN

LEVEL
SHIFT

V

B

HV

PULSE

FILTER

DELAY

R
S

15.6V

Q

HO

V

S

V

CC

LO

UV

DETECT

Functional Block Diagram for IR2153D

R

T

R

+

-

R

RQ

+

S

R/2

C

T

R/2

-

+

-

UV

DETECT

LOGIC

NOTE: The D1 is a separate die.

DEAD

TIME

Q

PULSE

DEAD
TIME

GEN

HV
LEVEL
SHIFT

PULSE
FILTER

DELAY

R
S

15.6V

COM

V

B

Q

HO

V

D1

S

V

CC

LO

COM

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IR2153(D)(S) & ( PbF)

NOTE:For new designs, we recommend

IR’s new product IRS2153D

8 Lead PDIP

8 Lead SOIC

01-3003 01

01-0021 08

www.irf.com 7

IR2153(D)(S) & ( PbF)

NOTE:For new designs, we recommend
IR’s new product IRS2153D

Vccuv+

Vcc

2/3

R

,C

T

T

1/3

V

CLAMP

R

T

C

T

LO

HO

td

td

Figure 1. Input/Output Timing Diagram

(HO)

(LO)

Figure 2. Switching Time Waveform Definitions

R

T

50%

50%

90%

HO

10%

DT

LO

90%

10%

Figure 3. Deadtime Waveform Definitions

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IR2153(D)(S) & ( PbF)

NOTE:For new designs, we recommend

LEADFREE PART MARKING INFORMATION

IR’s new product IRS2153D

Part number

Date code

Pin 1
Identifier

?

MARKING CODE

P

Lead Free Released

Non-Lead Free
Released

IRxxxxxx

YWW?

?XXXX

(Prod mode - 4 digit SPN code)

Assembly site code
Per SCOP 200-002

ORDER INFORMATION

Basic Part (Non-Lead Free)

8-Lead PDIP IR2153 order IR2153
8-Lead SOIC IR2153S order IR2153S
8-Lead PDIP IR2153D order IR2153D

Leadfree Part

8-Lead PDIP IR2153 order IR2153PbF
8-Lead SOIC IR2153S order IR2153SPbF
8-Lead PDIP IR2153D order IR2153DPbF

IR logo

Lot Code

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: [phone]

Data and specifications subject to change without notice. 2/8/2006

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This product has been qualified per industrial level