Datasheet IR21531DS Datasheet (International Rrectifier)

Preliminary Data Sheet No. PD60131 revM

IR21531(D)(S) & (PbF)

SELF-OSCILLATING HALF-BRIDGE DRIVER

Features

Integrated 600V half-bridge gate driver

•

15.6V zener clamp on Vcc

•

True micropower start up

•

Tighter initial deadtime control

•

Low temperature coefficient deadtime

•

Shutdown feature (1/6th Vcc) on CT pin

•

Increased undervoltage lockout Hysteresis (1V)

•

Lower power level-shifting circuit

•

Constant LO, HO pulse widths at startup

•

Lower di/dt gate driver for better noise immunity

•

Low side output in phase with RT

•

Internal 50nsec (typ.) bootstrap diode (IR21531D)

•

Excellent latch immunity on all inputs and outputs

•

ESD protection on all leads

•

Also available LEAD-FREE

•

Product Summary

V

OFFSET

Duty Cycle 50%

Tr/T

p

V

clamp

Deadtime (typ.) 0.6 µs

600V max.

80/40ns

Packages

15.6V

Description

The IR21531(D)(S) are an improved version of the
popular IR2155 and IR2151 gate driver ICs, and in­corporates a high voltage half-bridge gate driver with a front end oscillator similar to the industry standard
CMOS 555 timer. The IR21531 provides more functionality and is easier to use than previous ICs. A shutdown
feature has been designed into the CT pin, so that both gate driver outputs can be disabled using a low voltage
control signal. In addition, the gate driver output pulse widths are the same once the rising undervoltage
lockout threshold on VCC has been reached, resulting in a more stable profile of frequency vs time at
startup. Noise immunity has been improved significantly, both by lowering the peak di/dt of the gate drivers,
and by increasing the undervoltage lockout hysteresis to 1V. Finally, special attention has been payed to
maximizing the latch immunity of the device, and providing comprehensive ESD protection on all pins.

8 Lead PDIP

8 Lead SOIC

Typical Connections

IR21531(S)

600V
MAX

VCC

VB

HO

RT

VS

CT

LO

Shutdown

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COM

Shutdown

IR21531(D)

VCC

VB

HO

RT

VS

CT

LO

COM

600V
MAX

IR21531(D)(S) & (PbF)

Absolute Maximum Ratings

Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param­eters are absolute voltages referenced to COM, all currents are defined positive into any lead. The thermal resistance and
power dissipation ratings are measured under board mounted and still air conditions.

Symbol Definition Min. Max. Units

V

B

V

S

V

HO

V

LO

V

RT

V

CT

I

CC

I

RT

dVs/dt Allowable offset voltage slew rate -50 50 V/ns

P

D

Rth

JA

T

J

T

S

T

L

High side floating supply voltage -0.3 625

High side floating supply offset voltage VB - 25 VB + 0.3

High side floating output voltage VS - 0.3 V

B

+ 0.3

Low side output voltage -0.3 VCC + 0.3

RT pin voltage -0.3 VCC + 0.3

CT pin voltage -0.3 V

CC

+ 0.3

Supply current (note 1) — 25

RT pin current -5 5

Maximum power dissipation @ T

≤ +25°C (8 Lead DIP) — 1.0

A

(8 Lead SOIC) — 0.625

Thermal resistance, junction to ambient (8 Lead DIP) — 125

(8 Lead SOIC) — 200

°C/W

Junction temperature -55 150

Storage temperature -55 150 °C

Lead temperature (soldering, 10 seconds) — 300

V

mA

W

Recommended Operating Conditions

For proper operation the device should be used within the recommended conditions.

Symbol Definition Min. Max. Units

V

BS

V

S

V

CC

I

CC

T

J

Note 1: This IC contains a zener clamp structure between the chip VCC and COM which has a nominal breakdown

Note 2: Care should be taken to avoid output switching conditions where the VS node flies inductively below ground by

Note 3: Enough current should be supplied to the VCC pin of the IC to keep the internal 15.6V zener diode clamping the

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High side floating supply voltage VCC - 0.7 V

Steady state high side floating supply offset voltage -3.0 (note 2) 600

Supply voltage 10 V

CLAMP

V

CLAMP

Supply current (note 3) 5 mA

Junction temperature -40 125 °C

voltage of 15.6V. Please note that this supply pin should not be driven by a DC, low impedance power source
greater than the V

specified in the Electrical Characteristics section.

CLAMP

more than 5V.

voltage at this pin.

IR21531(D)(S) & (PbF)

Recommended Component Values

Symbol Component Min. Max. Units

R

T

C

T

1000000

100000

Timing resistor value 10 — kΩ

CT pin capacitor value 330 — pF

IR21531 RT vs Frequency

IR2153 RT vs Frequency

10000

1000

Frequency (Hz)

100

10

10 100 1000 10000 100000 1000000

330pf

470pF

1nF

2.2nF

4.7nF

10nF

CT Values

RT (oh ms)

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IR21531(D)(S) & (PbF)

Electrical Characteristics

V

(VCC, VBS) = 12V, CL = 1000 pF, CT = 1 nF and TA = 25°C unless otherwise specified. The VIN, VTH and I

BIAS

parameters are referenced to COM. The VO and IO parameters are referenced to COM and are applicable to the
respective output leads: HO or LO.

Low Voltage Supply Characteristics

Symbol Definition Min. Typ. Max. Units Test Conditions

V

CCUV+

V

CCUV-

V

CCUVHVCC

I

QCCUV

I

QCC

V

CLAMPVCC

Rising VCC undervoltage lockout threshold 8.1 9.0 9.9
Falling VCC undervoltage lockout threshold 7.2 8.0 8.8

undervoltage lockout Hysteresis 0.5 1.0 1.5

Micropower startup VCC supply current — 75 150 V
Quiescent VCC supply current — 500 950

zener clamp voltage 14.4 15.6 16.8 V ICC = 5mA

V

µA

CC

Floating Supply Characteristics

Symbol Definition Min. Typ. Max. Units Test Conditions

I

QBSUV

I

QBS

V

BSMIN

I

LK

VF Bootstrap diode forward voltage (IR21531D) 0.5 — 1.0 V IF = 250mA

Micropower startup VBS supply current — 0 10 V
Quiescent VBS supply current — 30 50
Minimum required VBS voltage for proper — 4.0 5.0 V VCC=V
functionality from RT to HO

Offset supply leakage current — — 50 µAV

µA

CC

B

IN

≤

V

CCUV-

≤

V

CCUV-

+ 0.1V

CCUV+

= VS = 600V

Oscillator I/O Characteristics

Symbol Definition Min. Typ. Max. Units Test Conditions

f

osc

d RT pin duty cycle 48 50 52 % fo < 100kHz
ICT CT pin current
I

CTUV

V

CT+

V

CT-

V

CTSD

V

RT+

V

RT-

V

RTUV

V

RTSD

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Oscillator frequency 19.4 20 20.6 R

94 100 106 RT = 7.43kΩ

—

0.001 1.0 uA
UV-mode CT pin pulldown current 0.30 0.70 1.2 mA VCC = 7V
Upper CT ramp voltage threshold
Lower CT ramp voltage threshold
CT voltage shutdown threshold 1.8 2.1 2.4
High-level RT output voltage, VCC - V

Low-level RT output voltage

UV-mode RT output voltage
SD-Mode RT output voltage, VCC - V

RT

RT

—

8.0

— 4.0 —

— 10 50 I
— 100 300 IRT = 1mA
— 10 50 I
— 100 300 IRT = 1mA
— 0 100 V
— 10 50 I

— 10 300 IRT = 1mA,

—

kHz

V

mV

= 36.9kΩ

T

= 100µA

RT

= 100µA

RT

≤

V

CC

= 100µA,

RT

VCT = 0V

VCT = 0V

CCUV-

IR21531(D)(S) & (PbF)

Electrical Characteristics (cont.)

Gate Driver Output Characteristics

Symbol Definition Min. Typ. Max. Units Test Conditions

VOH High level output voltage, V
VOL Low-level output voltage, VO — 0 100 IO = OA
VOL_UV UV-mode output voltage, VO — 0 100 IO = OA

t

r

t

f

t

sd

t

d

Output rise time — 80 150
Output fall time — 45 100
Shutdown propogation delay — 660 —

Output deadtime (HO or LO) 0.35 0.60 0.85 µsec

Lead Definitions

Symbol Description

V

CC

R

T

C

T

COM IC power and signal ground
LO Low side gate driver output
V

S

HO High side gate driver output
V

B

Logic and internal gate drive supply voltage
Oscillator timing resistor input
Oscillator timing capacitor input

High voltage floating supply return

High side gate driver floating supply

BIAS

-V

O

— 0 100 IO = OA

mV

V

≤

CC

nsec

V

CCUV-

Lead Assignments

8 Lead DIP 8 Lead SOIC

IR21531(D) IR21531S

NOTE: The IR21531D is offered in 8 lead DIP only.

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IR21531(D)(S) & (PbF)

Q

QSQ

Q

QSQ

Functional Block Diagram for IR21531(S)

R

T

V

B

R

+

-

R

R

+

R/2

C

T

R/2

-

+

-

UV

DETECT

LOGIC

DEAD

TIME

PULSE

DEAD
TIME

GEN

Functional Block Diagram for IR21531D

R

T

R

+

-

R

R

+

R/2

C

T

R/2

-

+

-

LOGIC

DEAD

TIME

PULSE

DEAD
TIME

GEN

HV
LEVEL
SHIFT

LEVEL
SHIFT

PULSE
FILTER

DELAY

HV

PULSE

FILTER

DELAY

R

S

15.6V

R

S

15.6V

D1

HO

V

S

V

CC

LO

COM

V

HO

V

V

LO

B

S

CC

UV

DETECT

COM

NOTE: The D1 is a separate die.

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IR21531(D)(S) & (PbF)

8 Lead PDIP

8 Lead SOIC

01-3003 01

01-0021 08

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IR21531(D)(S) & (PbF)

Vccuv+

Vcc

2/3

RT,C

T

1/3

V

CLAMP

R

T

C

T

LO

HO

td

td

Figure 1. Input/Output Timing Diagram

(HO)

(LO)

Figure 2. Switching Time Waveform Definitions





 















Figure 3. Deadtime Waveform Definitions

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IR21531(D)(S) & (PbF)

LEADFREE PART MARKING INFORMATION

Part number

Date code

Pin 1
Identifier

?

MARKING CODE

Lead Free Released

P

Non-Lead Free
Released

IRxxxxxx

YWW?

ORDER INFORMATION

Basic Part (Non-Lead Free)

8-Lead PDIP IR21531 order IR21531
8-Lead SOIC IR21531S order IR21531S
8-Lead PDIP IR21531D order IR21531D

IR logo

?XXXX

Lot Code

(Prod mode - 4 digit SPN code)

Assembly site code
Per SCOP 200-002

Leadfree Part

8-Lead PDIP IR21531 order IR21531PbF
8-Lead SOIC IR21531S order IR21531SPbF
8-Lead PDIP IR21531D order IR21531DPbF

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: [phone]

Data and specifications subject to change without notice. 9/20/2005

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This product has been qualified per industrial level