Page 1
Features
n Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
n Gate drive supply range from 10 to 20V
n Undervoltage lockout for all channels
n Over-current shutdown turns off all six drivers
n Independent 3 high side & 3 low side drivers
n Matched propagation delay for all channels
n Outputs out of phase with inputs
Description
The IR2131 is a high voltage, high speed power
MOSFET and IGBT driver with three independent high
and low side referenced output channels. Proprietary
HVIC technology enables ruggedized monolithic
construction. Logic inputs are compatible with 5V
CMOS or LSTTL outputs. A current trip function which
terminates all six outputs can be derived from an
external current sense resistor. A shutdown input is
provided for a customiz ed shutdo wn function. An open
drain
FAULT signal is provided to indicate that any of
the shutdowns has occurred. The output drivers
feature a high pulse current buffer stage designed for
minimum driv er cross-conduction. Propagation delays
are matched to simplify use in high frequency
applications. The floating channels can be used to
drive N-channel power MOSFETs or IGBTs in the high
side configuration which operate up to 600 volts.
Data Sheet No. PD-6.032C
IR2131
3 HIGH SIDE AND 3 LOW SIDE DRIVER
Product Summary
V
OFFSET
600V max.
IO+/- 200 mA / 420 mA
V
OUT
10 - 20V
t
on/off
(typ.) 1.3 & 0.6 µs
Deadtime (typ.) 700 ns
Packages
Typical Connection
CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL B-157
Page 2
IR2131
B-158 CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL
Parameter Value
Symbol Definition Min. Max. Units
V
B1,2,3
High Side Floating Supply Voltage -0.3 525
V
S1,2,3
High Side Floating Offset Voltage V
B1,2,3
- 25 V
B1,2,3
+ 0.3
V
HO1,2,3
High Side Floating Output Voltage V
S1,2,3
- 0.3 V
B1,2,3
+ 0.3
V
CC
Low Side and Logic Fixed Supply Voltage -0.3 25
V
SS
Logic Ground VCC - 25 V
CC
+ 0.3
V
LO1,2,3
Low Side Output Voltage -0.3 V
CC
+ 0.3
V
IN
Logic Input Voltage (
HIN1,2,3,LIN1,2,3,FLT- CLR,
SD & ITRIP) V
SS
- 0.3 V
CC
+ 0.3
V
FLT
FAULT Output Voltage V
SS
- 0.3 V
CC
+ 0.3
dVS/dt Allowable Offset Supply Voltage Transient — 50 V/ns
P
D
Package Power Dissipation @ TA ≤ +25°C (28 Lead DIP) — 1.5
(28 Lead SOIC) — 1.6 W
(44 Lead PLCC) — 2.0
R
θJA
Thermal Resistance, Junction to Ambient (28 Lead DIP) — 83
(28 Lead SOIC) — 78 °C/W
(44 Lead PLCC) — 6 3
T
J
Junction Temperature — 150
T
S
Storage Temperature -55 150 °C
T
L
Lead Temper ature (Soldering, 10 seconds) — 300
Parameter Value
Symbol Definition Min. Max. Units
V
B1,2,3
High Side Floating Supply Voltage V
S1,2,3
+ 10 V
S1,2,3
+ 20
V
S1,2,3
High Side Floating Offset Voltage Note 1 600
V
HO1,2,3
High Side Floating Output Voltage V
S1,2,3
V
B1,2,3
V
CC
Low Side and Logic Fixed Supply Voltage 10 20
V
SS
Logic Ground -5 5
V
LO1,2,3
Low Side Output Voltage 0 V
CC
V
IN
Logic Input Voltage (
HIN1,2,3,LIN 1,2,3
,
FLT -CLR ,
SD & ITRIP) V
SS
VSS + 5
V
FLT
FAULT
Output Voltage V
SS
V
CC
T
A
Ambient Temperature -40 1 25 °C
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The Ther mal Resistance and Power Dissipation ratings are measured
under board mounted and still air conditions. Additional Information is shown in Figures 7 through 10.
Note 1: Logic operational for VS of -5V to +600V. Logic state held for VS of -5V to -VBS.
Recommended Operating Conditions
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the
recommended conditions. All voltage parameters are absolute voltages referenced to COM. The V
S
offset rating is
tested with all supplies biased at 15V differential.
V
V
Page 3
IR2131
CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL B-159
Parameter Value
Symbol Definition Min. Typ. Max. Units T est Conditions
V
IH
Logic “0” Input Voltage (OUT = LO) 2.2 — —
V
IL
Logic “1” Input Voltage (OUT = HI) — — 0.8
V
FCLR,IH
Logic “0” Fault Clear Input Voltage 2.2 — —
V
FCLR,IL
Logic “1” Fault Clear Input Voltage — — 0.8
V
SD,TH+
Shutdown Input Positive Going Threshold 1.2 1.8 2.1
V
SD,TH-
Shutdown Input Negative Going Threshold 0.9 1.5 1.8
V
IT,TH+
ITRIP Input Positive Going Threshold 250 4 85 600
V
IT,TH-
ITRIP Input Negative Going Threshold 200 4 00 550
V
OH
High Level Output Voltage, V
BIAS
- VO — — 100 VIN = 0V, IO = 0A
V
OL
Low Level Output Voltage , VO — — 100 VIN = 5V, IO = 0A
I
LK
Offset Supply Leakage Current — — 50 VB = VS = 600V
I
QBS
Quiescent VBS Supply Current — 30 10 0 VIN = 0V or 5V
I
QCC
Quiescent VCC Supply Current — 3.0 4.5 mA VIN = 0V or 5V
I
IN+
Logic “1” Input Bias Current (OUT = HI) — 190 300 VIN = 0V
I
IN-
Logic “0” Input Bias Current (OUT = LO) — 50 10 0 µA VIN = 5V
I
ITRIP+
“High” ITRIP Bias Current — 75 150 ITRIP = 5V
I
ITRIP-
“Low” ITRIP Bias Current — — 100 nA ITRIP = 0V
I
FCLR+
Logic “1” Fault Clear Bias Current — 12 5 250
FLT- CLR = 0V
I
FCLR-
Logic “0” Fault Clear Bias Current — 75 15 0 µA
FLT- CLR = 5V
I
SD+
Logic “1” Shutdown Bias Current — 75 15 0 SD = 5V
I
SD-
Logic “0” Shutdown Bias Current — — 100 nA SD = 0V
Parameter Value
Symbol Definition Min. Typ. Max. Units Test Conditions
t
on
Tur n-On Propagation Delay 0.6 1.3 2.0
t
off
Tur n-Off Propagation Delay 0.2 0.6 1.0 V
IN
= 0 & 5V
t
r
Tur n-On Rise Time — 80 150 V
S1,2,3
= 0 to 600V
t
f
Tur n-Off Fall Time — 40 100
t
itrip
ITRIP to Output Shutdown Propagation Delay 400 700 1000 VIN, V
ITRIP
= 0 & 5V
t
bl
ITRIP Blanking Time — 400 — V
ITRIP
= 1V
t
flt
ITRIP to
FAULT
Indication Delay 400 700 1000 ns V
IN
, V
ITRIP
= 0 & 5V
t
flt,in
Input Filter Time (All Six Inputs) — 3 10 — V
IN
= 0 & 5V
t
fltclr
FLT -CLR
to
FAULT
Clear Time 400 700 1000 V
IN
, VIT, V
FC
= 0&5V
t
sd
SD to Output Shutdown Propagation Delay 400 700 1000 VIN, V
SD
= 0 & 5V
DT Deadtime 400 700 1200 V
IN
= 0 & 5V
Dynamic Electrical Characteristics
V
BIAS
(VCC, V
BS1,2,3
) = 15V, V
S1,2,3
= VSS = COM, CL = 1000 pF and TA = 25°C unless otherwise specified. The
dynamic electrical characteristics are defined in Figures 4 through 5.
Static Electrical Characteristics
V
BIAS
(VCC, V
BS1,2,3
) = 15V, V
S1,2,3
= VSS = COM and TA = 25°C unless otherwise specified. The VIN, VTH and I
IN
parameters are referenced to VSS and are applicable to all six logic input leads:
HIN1,2,3
&
LIN1,2,3 . The V
O
and I
O
parameters are referenced to COM and V
S1,2,3
and are applicable to the respective output leads: HO1,2,3 or LO1,2,3.
µs
µA
mV
V
Page 4
IR2131
B-160 CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL
Parameter Value
Symbol Definition Min. Typ. Max. Units Test Conditions
V
BSUV+
VBS Supply Undervoltage Positive Going 8.2 8.7 9.2
Threshold
V
BSUV-
VBS Supply Undervoltage Negative Going 7.8 8.3 8.8
Threshold
V
CCUV+
VCC Supply Undervoltage P ositive Going 8.2 8.7 9.2
Threshold
V
CCUV-
VCC Supply Undervoltage Negative Going 7.8 8.3 8.8
Threshold
R
on,FLT
FAULT
Low On-Resistance — 55 75 Ω
I
O+
Output High Short Circuit Pulsed Current 200 250 — VO = 0V, V
IN
= 0V
PW ≤ 10 µs
I
O-
Output Low Short Circuit Pulsed Current 420 500 — VO = 15V, V
IN
= 5V
PW ≤ 10 µs
Static Electrical Characteristics -- Continued
V
BIAS
(VCC, V
BS1,2,3
) = 15V, V
S1,2,3
= VSS = COM and TA = 25°C unless otherwise specified. The VIN, VTH and I
IN
parameters are referenced to VSS and are applicable to all six logic input leads:
HIN1,2,3
&
LIN1,2,3
. The V
O
and I
O
parameters are referenced to COM and V
S1,2,3
and are applicable to the respective output leads: HO1,2,3 or LO1,2,3.
Lead Assignments
28 Lead DIP 44 Lead PLCC w/o 12 Leads 28 Lead SOIC (Wide Body)
IR2131 IR2131J IR2131S
P art Number
mA
V
Page 5
IR2131
CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL B-161
Lead
Symbol Description
Logic inputs for high side gate driver outputs (HO1,2,3), out of phase
Logic inputs for low side gate driver output (LO1,2,3), out of phase
Logic input for fault clear
SD Logic input for shutdown
Indicates over-current or undervoltage lockout (low side) has occurred, negative logic
V
CC
Low side and logic fixed supply
ITRIP Input for over-current shutdown
V
SS
Logic ground
V
B1,2,3
High side floating supplies
HO1,2,3 High side gate drive outputs
V
S1,2,3
High side floating supply returns
LO1,2,3 Low side gate drive outputs
COM Low side return
Functional Block Diagram
Lead Definitions
HIN1,2,3
FAULT
FLT- CLR
LIN1,2,3
Page 6
IR2131
B-162 CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL
Thickness of Gate Oxide 8 00Å
Connections Material P oly Silicon
First Width 4 µm
Layer Spacing 6 µm
Thickness 5000Å
Material Al - Si (Si: 1.0% ±0.1%)
Second Width 6 µm
Layer Spacing 9 µm
Thickness 20,000Å
Contact Hole Dimension 8 µm X 8 µm
Insulation Layer Material PSG (SiO2)
Thickness 1.5 µm
P assivation Material PSG (SiO2)
Thickness 1.5 µm
Method of Saw Full Cut
Method of Die Bond Ablebond 84 - 1
Wire Bond Method Thermo Sonic
Material Au (1.0 mil / 1.3 mil)
Leadframe Material Cu
Die Area Ag
Lead Plating Pb : Sn (37 : 63)
P ackage Types 28 Lead PDIP & SOIC / 44 Lead PLCC
Materials EME6300 / MP150 / MP190
Remarks:
Device Information
Process & Design Rule HVDCMOS 4.0 µ m
Transistor Count 700
Die Siz e 167 X 141 X 26 (mil)
Die Outline
Page 7
IR2131
CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL B-163
Figure 6. Shutdown Waveform DefinitionsFigure 5. Deadtime Waveform Definitions
DT DT
50% 50%
50% 50%
t
flt
50%
50%
t
itrip
50%
50%
50%
50%
50%
t
fltclr
t
sd
ITRIP
FAULT
FLT -CLR
LO1,2,3
LIN1,2,3
HIN1,2,3
LIN1,2,3
HO1,2,3
LO1,2,3
SD
Figure 1. Input/Output Timing Diagram Figure 2. Floating Supply Voltage Transient T est Circuit
Figure 4. Switching Time Waveform DefinitionsFigure 3. Switching Time Test Circuit
HIN1,2,3
LIN1,2,3
FLT-CLR
FAULT
LO1,2,3
HO1,2,3
LO1,2,3
HO1,2,3
t
r
t
on
t
off
t
f
50% 50%
90% 90%
10% 10%
LIN1,2,3
HIN1,2,3
ITRIP
SD
SD
FLT-CLR
C0M
Page 8
IR2131
B-164 CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL
Figure 7. IR2131 TJ vs. Frequency (IRF820)
R
GATE
= 33
ΩΩ
ΩΩ
Ω, VCC = 15V
Figure 9. IR2131 TJ vs. Frequency (IRF840)
R
GATE
= 15
ΩΩ
ΩΩ
Ω, VCC = 15V
Figure 10. IR2131 TJ vs. Frequency (IRF450)
R
GATE
= 10
ΩΩ
ΩΩ
Ω, VCC = 15V
Figure 8. IR2131 T
J
vs. Frequency (IRF830)
R
GATE
= 20
ΩΩ
ΩΩ
Ω, VCC = 15V
20
25
30
35
40
45
50
1E+2 1E+3 1E+4 1E+5
Frequency (Hz)
J
unction Temperature (°C
)
320V
160V
0V
480V
20
25
30
35
40
45
50
1E+2 1E+3 1E+4 1E+5
Frequency (Hz)
J
unction Temperature (°C
)
320V
160V
0V
480V
20
40
60
80
100
1E+2 1E+3 1E+4 1E+5
Frequency (Hz)
J
unction Temperature (°C
)
320V
160V
0V
480V
20
40
60
80
100
120
140
1E+2 1E+3 1E+4 1E+5
Frequency (Hz)
J
unction Temperature (°C
)
320V
160V
0V
480V
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