Datasheet ipw65r080cfd_2_0 Datasheet

MOSFET

Metal Oxide Semiconductor Field Effect Transistor

CoolMOS CFD

650V CoolMOS™ CFD Power Transistor
IPW65R080CFD

Data Sheet

Rev. 2.0, 2011-02-02
Final

Industrial & Multimarket

drain
pin 2

gate
pin 1

source
pin 3

650V CoolMOS™ CFD Power Transistor IPW65R080CFD

1 Description

CoolMOS™ is a revolutionary technology for high voltage power MOSFETs,
designed according to the superjunction (SJ) principle and pioneered by Infineon
Technologies. 650V CoolMOS™ CFD series combines the experience of the
leading SJ MOSFET supplier with high class innovation. The resulting devices
provide all benefits of a fast switching SJ MOSFET while offering an extremely fast
and robust body diode. This combination of extremely low switching, commutation
and conduction losses together with highest robustness make especially resonant
switching applications more reliable, more efficient, lighter, and cooler

Features

• Ultra-fast body diode

• Very high commutation ruggedness

• Extremely low losses due to very low FOM R

• Easy to use/drive

• Qualified for industrial grade applications according to JEDEC

• Pb-free plating, Halogen free mold compound

dson*Qg and Eoss

1)

,

Applications

650V CoolMOS™ CFD is especially suitable for resonant switching PWM stages for
e.g. PC Silverbox, LCD TV, Lighting, Server,Telecom, and Solar

Please note: For MOSFET paralleling the use of ferrit e be ad s on the gat e
or separate totem poles is generally recommended.

Table 1 Key Performance Parameters

Parameter Value Unit Related Links

V

@ T

DS

R

DS(on),max

j,max

700 V IFX CoolMOS Webpage

0.08  IFX Design tools

Body diode di/dt 900 A/µs

Q

rr

t

rr

I

rrm

Q

g,typ

I

D,pulse

E

@ 400V 12.5 µJ

oss

1µC

180 ns

10 A

170 nC

137 A

Type Package Marking

IPW65R080CFD PG-TO247 65F6080

1) J-STD20 and JESD22

Final Data Sheet 2 Rev. 2.0, 2011-02-02

650V CoolMOS™ CFD Power Transistor

IPW65R080CFD

Table of Contents

Table of Contents

1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

6 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

7 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Final Data Sheet 3 Rev. 2.0, 2011-02-02

650V CoolMOS™ CFD Power Transistor

IPW65R080CFD

Maximum ratings

2 Maximum ratings

at T

= 25 °C, unless otherwise specified.

j

Table 2 Maximum ratings
Parameter Symbol Values Unit Note / Test Condition

Min. Typ. Max.

Continuous drain current

Pulsed drain current

Avalanche energy, single pulse E
Avalanche energy, repetitive E
Avalanche current, repetitive I
MOSFET dv/dt ruggedness dv/dt - - 50 V/ns V
Gate source voltage V

Power dissipation P
Operating and storage temperature T

Mounting torque - - 60 Ncm M3 and M3.5 screws

Continuous diode forward current I

Diode pulse current

Reverse diode dv/dt

Maximum diode commutation

3)

speed

1) Limited by T

2) Pulse width tp limited by T

3) ISD≤ID, di/dt≤900A/µs, V

j,max.

1)

2)

I

D

I

D,pulse

AS

AR

AR

GS

--43.3 AT

27.4 T

--137 AT

= 25 °C

C

= 100°C

C

=25 °C

C

- - 1160 mJ ID=8.7 A,V

- - 1.76

--8.7 A

=0...480 V

DS

-20 - 20 V static

DD

=50 V

-30 30 AC (f>1 Hz)

tot

j,Tstg

S

2)

3)

I

S,pulse

dv/dt - - 50 V/ns VDS=0...400 V, I

--391 WT

-55 - 150 °C

--43.3 AT

--140 AT

=25 °C

C

=25 °C

C

=25 °C

C

T

=25 °C

j

SD

 I

dif/dt - - 900 A/µs

j,max

DClink

=400V, V

peak<V(BR)DSS

, Tj<T

, identical low and high side switch

jmax

,

D

3 Thermal characteristics

Table 3 Thermal characteristics TO-247
Parameter Symbol Values Unit Note /

Min. Typ. Max.

Thermal resistance, junction - case

Thermal resistance, junction -

R

thJC

R

thJA

- - 0.32 °C/W

- - 62 leaded

ambient

Soldering temperature,

T

sold

- - 260 °C 1.6 mm (0.063 in.)
wavesoldering only allowed at
leads

Final Data Sheet 4 Rev. 2.0, 2011-02-02

Test Condition

from case for 10 s

650V CoolMOS™ CFD Power Transistor

IPW65R080CFD

Electrical characteristics

4 Electrical characteristics

Electrical characteristics, at Tj=25 °C, unless otherwise specified.

Table 4 Static characteristics
Parameter Symbol Values Unit Note / Test Condition

Min. Typ. Max.

Drain-source breakdown voltage

Gate threshold voltage

Zero gate voltage drain current

Gate-source leakage current

Drain-source on-state resistance

Gate resistance

V

(BR)DSS

V

GS(th)

I

DSS

I

GSS

R

DS(on)

R

G

650 - - V VGS=0 V, I

3.5 4 4.5 VDS=VGS, I

-- 1µAVDS=650 V, V

T

=25 °C

j

-500-

V

=650 V, V

DS

T

=150 °C

j

- - 100 nA VGS=20 V, V

- 0.072 0.08  VGS=10 V, I

T

=25 °C

j

-0.19-

V

=10 V, I

GS

T

=150 °C

j

=1 mA

D

=1.76 mA

D

=0 V,

GS

=0 V,

GS

=0 V

DS

=17.6 A,

D

=17.6 A,

D

-0.75-  f=1 MHz, open drain

Table 5 Dynamic characteristics
Parameter Symbol Values Unit Note /

Test Condition

f=1 MHz

=0 V,

GS

V

=0...400 V

DS

V

=0...400V

DS

=400 V,

DD

V

=13 V, I

GS

R

=1.8 

G

Input capacitance

Output capacitance

Effective output capacitance,
energy related

1)

Effective output capacitance, time
related

2)

Turn-on delay time

Rise time

Turn-off delay time

Fall time

1) C

2) C

is a fixed capacitance that gives the same stored energy as C

o(er)

is a fixed capacitance that gives the same charging time as C

o(tr)

C
C
C

C

t

d(on)

t

r

t

d(off)

t

f

iss

oss

o(er)

o(tr)

Min. Typ. Max.

-5030- pFVGS=0 V, V

-215-

-135- V

-675- ID=constant, V

-20- nsV

-18-

-85-

-6-

while VDS is rising from 0 to 400 V

oss

while VDS is rising from 0 to 400 V

oss

=100 V,

DS

=0 V

GS

=26.3 A,

D

Final Data Sheet 5 Rev. 2.0, 2011-02-02

650V CoolMOS™ CFD Power Transistor

IPW65R080CFD

Electrical characteristics

Table 6 Gate charge characteristics
Parameter Symbol Values Unit Note /

Test Condition

=26.3 A,

I

D

V

=0 to 10 V

GS

Gate to source charge

Gate to drain charge

Gate charge total

Gate plateau voltage

Q
Q
Q
V

plateau

Min. Typ. Max.

gs

gd

g

-25- nCVDD=480 V,

-120-

-170-

-6.4- V

Table 7 Reverse diode characteristics
Parameter Symbol Values Unit Note /

Test Condition

T

=25 °C

j

d

i

/dt=100 A/µs

F

Diode forward voltage

Reverse recovery time

Reverse recovery charge

Peak reverse recovery current

Min. Typ. Max.

V

SD

t

rr

Q

rr

I

rrm

-0.9- VVGS=0 V, I

-180- nsVR=400 V, I

-1- µC

-10- A

=26.3 A,

F

=26.3 A,

F

Final Data Sheet 6 Rev. 2.0, 2011-02-02

650V CoolMOS™ CFD Power Transistor

Electrical characteristics diagrams

5 Electrical characteristics diagrams

Table 8
Power dissipation Max. transient thermal impedance

IPW65R080CFD

P

= f(TC) Z

tot

Table 9
Safe operating area

T

=25 °C Safe operating area TC=80 °C

C

=f(tp); parameter: D=tp/T

(thJC)

I

=f(VDS); V

D

> 7,5V; TC=25 °C; D=0; parameter t

GS

I

p

=f(VDS); V

D

> 7,5V; TC=80 °C; D=0; parameter t

GS

p

Final Data Sheet 7 Rev. 2.0, 2011-02-02

650V CoolMOS™ CFD Power Transistor

IPW65R080CFD

Table 10
Typ. output characteristics T

Electrical characteristics diagrams

=25 °C Typ. output characteristics Tj=125 °C

j

I

=f(VDS); Tj=25 °C; parameter: V

D

GS

ID=f(VDS); Tj=125 °C; parameter: V

Table 11
Typ. drain-source on-state resistance Drain-source on-state resistance

GS

R

=f(ID); Tj=125 °C; parameter: V

DS(on)

GS

R

=f(Tj); ID=17.6 A; V

DS(on)

GS

=10 V

Final Data Sheet 8 Rev. 2.0, 2011-02-02

650V CoolMOS™ CFD Power Transistor

Table 12

Typ. transfer characteristics Typ. gate charge

IPW65R080CFD

Electrical characteristics diagrams

I

=f(VGS); V

D

DS

=20V

V

GS

=f(Q

gate

), I

=26.3 A pulsed

D

Table 13

Avalanche energy Drain-source breakdown voltage

E

=f(Tj); ID=8.7 A; VDD=50 V V

AS

BR(DSS)

=f(Tj); I

=1.0 mA

D

Final Data Sheet 9 Rev. 2.0, 2011-02-02

650V CoolMOS™ CFD Power Transistor

IPW65R080CFD

Table 14

Typ. capacitances Typ. C

stored energy

oss

Electrical characteristics diagrams

C=f(V

); VGS=0 V; f=1 MHz E

DS

Table 15

Forward characteristics of reverse diode

OSS

=f(V

DS

)

I

=f(VSD); parameter: T

F

j

Final Data Sheet 10 Rev. 2.0, 2011-02-02

6 Package outlines

MILLIMETERS

5.44 (BSC)

c

Q

E3

E2

D

E

D1
D2

L1

e

L

N

S

øP

TO247-3-21/-41/-44

650V CoolMOS™ CFD Power Transistor

IPW65R080CFD

Package outlines

DIM

A
A1
A2

b
b1
b2
b3
b4

E1

Figure 1 Outlines TO-247, dimensions in mm/inches

Final Data Sheet 11 Rev. 2.0, 2011-02-02

MIN

4.83

2.27

1.85

1.07

1.90

1.90

2.87

2.87

0.55

20.80

16.25

0.95

15.70

13.10

3.68

1.00

19.80

4.10

3.50

5.49

6.04

MAX

5.21

2.54

2.16

1.33

2.41

2.16

3.38

3.13

0.68

21.10

17.65

1.35

16.13

14.15

5.10

2.60

3

20.32

4.47

3.70

6.00

6.30

INCHES

MIN MAX

0.190

0.089

0.073

0.042

0.075

0.075

0.113

0.113

0.022

0.819

0.640

0.037

0.618

0.516

0.145

0.039

0.214 (BSC)
3

0.780

0.161

0.138

0.216

0.238

0.205

0.100

0.085

0.052

0.095

0.085

0.133

0.123

0.027

0.831

0.695

0.053

0.635

0.557

0.201

0.102

0.800

0.176

0.146

0.236

0.248

DOCUMENT NO.

Z8B00003327

5

ISSUE DATE

09-07-2010

REVISION

05

0

5

7.5mm

SCALE

0

EUROPEAN PROJECTION

650V CoolMOS™ CFD Power Transistor

IPW65R080CFD

7 Revision History

Revision History: 2011-02-02, Rev. 2.0
Previous Revision:
Revision Subjects (major changes since last revision)

2.0 Release of final data sheet

We Listen to Your Comments

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Your feedback will help us to continuously improve the quality of this document.

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Revision History

Edition 2011-02-02

Published by
Infineon Technologies AG
81726 Munich, Germany

© 2011 Infineon Technologies AG
All Rights Reserved.

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please contact the nearest

Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.

The Infineon Technologies component described in this Data Sheet may be used in life-support devices or
systems and/or automotive, aviation and aerospace applications or systems only with the express written approval
of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that
life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that
device or system. Life support devices or systems are intended to be implanted in the human body or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the
user or other persons may be endangered.

Final Data Sheet 12 Rev. 2.0, 2011-02-02