Page 1
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS C6
600V CoolMOS™ C6 Power Transistor
IPx60R190C6
Data Sheet
Rev. 2.1, 2010-02-09
Final
Industrial & Multimarket
Page 2
g
p
e
600V CoolMOS™ C6 Power Transistor IPA60R190C6, IPB60R190C6
IPI60R190C6, IPP60R190C6
IPW60R190C6
1 Description
CoolMOS™ is a revolu tionary technology for high voltage power
MOSFETs, designed according to the superjunction (SJ ) principle
and pioneered by Infineon Technologies. CoolMOS™ C6 series
combines the experie nce of the lea ding SJ M OSF ET suppl ier wi th
high class innovation. The o ffered dev ices provide al l bene fits of a
fast switching SJ MOSFET while not sacrificing ease of use.
Extremely low switching and conduction losses make switching
applications even more efficient, more compact, lighter, and cooler .
Features
• Extremely low losses due to very low FOM R
dson*Qg and Eoss
• Very high commutation ruggedness
• Easy to use/drive
1)
• JEDEC
qualified, Pb-free plating, Halogen free
Applications
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom, UPS and Solar.
Please note: For MOSFET paralleling the use of ferrite beads on
the gate or separate totem poles is generally recommended.
Table 1 Key Performance Parameters
Parameter Value Unit
V
@ T
DS
R
DS(on),max
Q
g,typ
I
D,pulse
E
oss
Body diode d
j,max
@ 400V 5.2 µJ
i/dt 500 A/µs
650 V
0.19 Ω
63 nC
59 A
ate
in 1
drain
pin 2
sourc
pin 3
Type / Ordering Code Package Marking Related Links
IPW60R190C6 PG-TO247
IFX C6 Product Brief
IPB60R190C6 PG-TO263 IFX C6 Portfolio
IPI60R190C6 PG-TO262 6R190C6 IFX CoolMOS Webpage
IPP60R190C6 PG-TO220 IFX Design tools
IPA60R190C6 PG-TO220 FullPAK
1) J-STD20 and JESD22
Final Data Sheet 2 Rev. 2.1, 2010-02-09
Page 3
600V CoolMOS™ C6 Power Transistor
IPx60R190C6
Table of Con t ent s
Table of Contents
1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Con t ent s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
6 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
7 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
8 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Final Data Sheet 3 Rev. 2.1, 2010-02-09
Page 4
600V CoolMOS™ C6 Power Transistor
IPx60R190C6
Maximum ratings
2 Maximum ratings
at Tj = 25 °C, unless otherwise specified.
Table 2 Maximum ratings
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse E
Avalanche energy, repetitive E
Avalanche current, repetitive I
MOSFET dv/dt ruggedness dv/dt - - 50 V/ns V
Gate source voltage V
Power dissipation for
TO-220, TO-247, TO-262, TO-263
Power dissipation for
TO-22 0 Fu llPAK
Operating and storage temperature Tj,T
Mounting torque
TO-220, TO-247
Mounting torque
TO-22 0 Fu llPAK
Continuous diode forward current I
Diode pulse current
Reverse diode dv/dt
Maximum diode commutation
3)
speed
1) Limited by T
2) Pulse width tp limite d by T
3) Identical low side and high side switch with identical R
j,max.
1)
2)
2)
3)
I
D
I
D,pulse
AS
AR
AR
GS
P
tot
P
tot
stg
S
I
S,pulse
dv/dt - - 15 V/ns VDS=0...400 V,I
dif/dt 500 A/µs (see table 22)
Maximum duty cycle D=0.75
j,max
- - 20.2 A TC= 25 °C
12.8 T
= 100°C
C
--59 ATC=25 °C
- - 418 mJ ID=3.4 A,VDD=50 V
(see table 21)
- - 0.63 ID=3.4 A,VDD=50 V
--3.4 A
=0...480 V
DS
-20 - 20 V static
-30 30 AC (f>1 Hz)
- - 151 W TC=25 °C
--34
-55 - 150 °C
- - 60 Ncm M3 and M3.5 screws
50 M2.5 screws
- - 17.5 A TC=25 °C
--59 ATC=25 °C
≤ I
SD
=25 °C
T
j
G
D
,
Final Data Sheet 4 Rev. 2.1, 2010-02-09
Page 5
600V CoolMOS™ C6 Power Transistor
IPx60R190C6
Thermal charac teristics
3 Thermal char ac ter is tic s
Table 3 Thermal characteristics TO-220 (IPP60R190C6),TO-247 (IPW60R190C6),TO-262 (IPI60R190C6)
Parame t er Symbol Value s Unit Note /
Min. Typ. Max.
Thermal resistance, junction - case
Thermal resistance, junction -
R
thJC
R
thJA
- - 0.83 °C/W
- - 62 leaded
ambient
Soldering temperature,
T
sold
- - 260 °C 1.6 mm (0.063 in.)
wavesoldering only allowed at
leads
Table 4 Thermal characteristics TO-220 FullPAK (IPA60R190C6)
Test Condition
from case for 10 s
Parame t er Symbol Value s Unit Note /
Test Condition
Thermal resistance, junction - case
Thermal resistance, junction -
Min. Typ. Max.
R
thJC
R
thJA
--3.7°C/W
- - 80 leaded
ambient
Soldering temperature,
wavesoldering only allowed at
T
sold
- - 260 °C 1.6 mm (0.063 in.)
from case for 10 s
leads
Table 5 Thermal characteristics TO-263 (IPB60R190C6)
Parame t er Symbol Value s Unit Note /
Test Condition
on PCB, minimal
Thermal resistance, junction - case
Thermal resistance, junction -
ambient
Min. Typ. Max.
R
thJC
R
thJA
- - 0.83 °C/W
- - 62 SMD version, device
footprint
35 SMD version, device
2
cooling
Soldering temperature,
on PCB, 6cm
1)
area
T
sold
- - 260 °C reflow MSL1
wave- & reflow soldering allowed
1) Device on 40mm*40mm*1. 5m m one layer epoxy PCB FR4 with 6cm2 copper area (thickness 70µm) for drain co nnection.
PCB is vertical without air stream cooling.
Final Data Sheet 5 Rev. 2.1, 2010-02-09
Page 6
600V CoolMOS™ C6 Power Transistor
IPx60R190C6
Electrical characteristics
4 Electrical characteristics
Electrical characteristics, at Tj=25 °C, unless otherwise specified.
Table 6 Static characteristics
Parame te r Symbol V al ues Unit Note / Test Cond iti on
Min. Typ. Max.
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
R
G
600 - - V VGS=0 V, ID=0.25mA
2.5 3 3.5 VDS=VGS, ID=0.63mA
--1µAVDS=600 V, VGS=0 V,
T
=25 °C
j
-10-
V
=600 V, VGS=0 V,
DS
T
=150 °C
j
- - 100 nA VGS=20 V , VDS=0 V
- 0.17 0.19 Ω VGS=10 V , ID=9.5 A,
T
=25 °C
j
-0.44-
V
=10 V , ID=9.5 A,
GS
T
=150 °C
j
-8.5-Ω f=1 MHz, open drain
Table 7 Dynamic characteristics
Parame t er Symbol Value s Unit Note /
Test Condition
f=1 MHz
V
=0...480 V
DS
V
=0...480V
DS
V
=13 V, ID=9.5A,
GS
R
=3.4Ω
G
(see table 20)
Input capacitance
Output capacitance
Effective output capacitance,
energy related
1)
Effective output capacitance, time
related
2)
Turn-on delay time
Rise time
Turn-off delay time
Fall tim e
1) C
2) C
is a fixed capacitance that gives the same stored ener gy as C
o(er)
is a fixed capacitance that gives the same charging time as C
o(tr)
C
C
C
C
t
d(on)
t
r
t
d(off)
t
f
iss
oss
o(er)
o(tr)
Min. Typ. Max.
- 1400 - pF VGS=0 V, VDS=100 V,
-85-
-56- VGS=0 V,
- 266 - ID=constant, VGS=0 V
-15-nsVDD=400 V,
-11-
- 110 -
-9-
while VDS is rising from 0 to 80% V
oss
while VDS is rising from 0 to 80% V
oss
(BR)DSS
(BR)DSS
Final Data Sheet 6 Rev. 2.1, 2010-02-09
Page 7
600V CoolMOS™ C6 Power Transistor
Electrical characteristics
Table 8 Gate charge characteristics
Parame t er Symbol Value s Unit Note /
Min. Typ. Max.
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Q
Q
Q
V
plateau
gs
gd
g
-7.6-nCVDD=480 V, ID=9.5A,
-32-
-63-
-5.4-V
Table 9 Reverse diode characteristics
Parame t er Symbol Value s Unit Note /
Min. Typ. Max.
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
V
SD
t
rr
Q
rr
I
rrm
-0.9-VVGS=0 V, IF=9.5A,
- 430 - ns VR=400 V, IF=9.5A,
-6.9-µC
-30-A
Test Condition
V
=0 to 10 V
GS
Test Condition
T
=25 °C
j
i
/dt=100 A/µs
d
F
(see table 22)
IPx60R190C6
Final Data Sheet 7 Rev. 2.1, 2010-02-09
Page 8
600V CoolMOS™ C6 Power Transistor
5 Electrical characteristics diagrams
Table 10
IPx60R190C6
Electrical characteristics diagrams
Power dis s ipation
TO-220, TO-247, TO-262, TO-263
P
= f(TC) P
tot
Power diss i pati on
TO-22 0 FullPAK
= f(TC)
tot
Table 11
Max. transient thermal impedance
TO-220, TO-247, TO-262, TO-263
Max. transient thermal impedance
TO-220 FullPAK
Z
=f(tp); parameter: D=tp/T Z
(thJC)
=f(tp); parameter: D=tp/T
(thJC)
Final Data Sheet 8 Rev. 2.1, 2010-02-09
Page 9
Table 12
T
Safe operating area
=25 °C
C
TO-220, TO-247, TO-262, TO-263
600V CoolMOS™ C6 Power Transistor
IPx60R190C6
Electrical characteristics diagrams
Safe operating area TC=25 °C
TO-22 0 FullPAK
I
=f(VDS); TC=25 °C; D=0; parameter t
D
Table 13
Safe operating area
T
C
=80 °C
TO-220, TO-247, TO-262, TO-263
I
p
=f(VDS); TC=25 °C; D=0; parameter t
D
p
Safe operating area TC=80 °C
TO-22 0 FullPAK
=f(VDS); TC=80 °C; D=0; parameter t
I
D
p
ID=f(VDS); TC=80 °C; D=0; parameter t
p
Final Data Sheet 9 Rev. 2.1, 2010-02-09
Page 10
Table 14
Typ. output characteristics
600V CoolMOS™ C6 Power Transistor
Electrical characteristics diagrams
T
=25 °C Typ. output characteristics Tj=125 °C
C
IPx60R190C6
=f(VDS); Tj=25 °C; parameter: V
I
D
GS
ID=f(VDS); Tj=125 °C; parameter: V
Table 15
Typ. drain-source on-state resistance Drain-source on-state resis tance
GS
R
=f(ID); Tj=125 °C; parameter: V
DS(on)
GS
R
=f(Tj); ID=9.5 A; VGS=10 V
DS(on)
Final Data Sheet 10 Rev. 2.1, 2010-02-09
Page 11
600V CoolMOS™ C6 Power Transistor
Table 16
Typ. transfer characteristics Typ. gate cha rge
IPx60R190C6
Electrical characteristics diagrams
I
=f(VGS); VDS=20V
D
V
GS
=f(Q
), ID=9.5A pulsed
gate
Table 17
Avalanche energy Drain-source breakdown voltage
=f(Tj); ID=3.4 A; VDD=50 V V
E
AS
=f(Tj); ID=0.25 mA
BR(DSS)
Final Data Sheet 11 Rev. 2.1, 2010-02-09
Page 12
Table 18
600V CoolMOS™ C6 Power Transistor
IPx60R190C6
Electrical characteristics diagrams
Typ. capacitances Typ. C
C=f(V
); VGS=0 V; f=1 MHz E
DS
OSS
=f(VDS)
stored energy
oss
Table 19
Forward characteristics of reverse diod e
=f(VSD); parameter: T
I
F
j
Final Data Sheet 12 Rev. 2.1, 2010-02-09
Page 13
600V CoolMOS™ C6 Power Transistor
V
IPx60R190C6
6Test circuits
Table 20 Switching times test circuit and waveform for inductive load
Switching times test circuit for inductive load Switching time waveform
V
DS
V
DS
V
GS
GS
Table 21 Unclamped inductive load test circuit and waveform
Unclamped inductive load test circuit Unclamped inductive wave form
10%
90%
t
d(on)
t
r
t
on
t
d( o f f)
Test circuits
t
f
t
off
I
D
V
DS
V
DS
I
D
Table 22 Test circuit and waveform for diode characteristics
Test circuit for diode characteristics Diode recovery waveform
I
D
R
G1
V
DS
R
G2
i
v
dit/d
F
Ι
F
Ι
RRM
V
(BR)DS
V
D
ttSt
=+
rr
F
QQ
+
Q
=
rr
SF
t
rr
tt
S
F
10%
Ι
Q
Q
F
S
90%
Ι
RRM
RRM
/didrrt
V
RRM
V
DS
t
RG1= R
Final Data Sheet 13 Rev. 2.1, 2010-02-09
G2
v
SIL00088
Page 14
7 Package outlines
600V CoolMOS™ C6 Power Transistor
IPx60R190C6
Package outlines
Figure 1 Outlines TO-247, dimensions in mm/inches
Final Data Sheet 14 Rev. 2.1, 2010-02-09
Page 15
600V CoolMOS™ C6 Power Transistor
IPx60R190C6
Package outlines
Figure 2 Outlines TO-220, dimensions in mm/inches
Final Data Sheet 15 Rev. 2.1, 2010-02-09
Page 16
600V CoolMOS™ C6 Power Transistor
IPx60R190C6
Package outlines
Figure 3 Outlines TO-22 0 FullPAK , dimensions in mm/ i nches
Final Data Sheet 16 Rev. 2.1, 2010-02-09
Page 17
600V CoolMOS™ C6 Power Transistor
IPx60R190C6
Package outlines
Figure 4 Outlines TO-262, dimensions in mm/inches
Final Data Sheet 17 Rev. 2.1, 2010-02-09
Page 18
600V CoolMOS™ C6 Power Transistor
IPx60R190C6
Package outlines
Figure 5 Outlines TO-263, dimensions in mm/inches
Final Data Sheet 18 Rev. 2.1, 2010-02-09
Page 19
600V CoolMOS™ C6 Power Transistor
IPx60R190C6
8 Revi sion History
CoolMOS C6 600V CoolMOS™ C6 Power Transistor
Revision History: 2010-02-09, Rev. 2.1
Revision Subjects (major changes since last revision)
2.0 Release of final data sheet
2.1 New package outlines TO-247
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the qualit y of this document .
Please send your proposal (including a reference to this document) to: erratum@infineon. c o m
Revision History
Edition 2010-02-09
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2010 Infineon Technologies AG
All Rights Reserved.
Legal Disclai m e r
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requi remen ts, c om ponents m ay c ontain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologie s Office.
Infineon Technologies compo nents may be us ed in life-suppo rt de vices or s ystem s only wi th the ex press written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be impla nted in the human body o r to support and/o r maintain and sustain
and/or protect human life. If they fa il, it is reasonable to assum e t hat the health of the us er or other pers ons ma y
be endangered.
Final Data Sheet 19 Rev. 2.1, 2010-02-09
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