Page 1
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS CE
500V CoolMOS™ CE Power Transistor
IPx50R380CE
Data Sheet
Rev. 2.0, 2010-08-27
Final
Industrial & Multimarket
Page 2
drain
pin 2
gate
pin 1
source
pin 3
500V CoolMOS™ CE Power Transistor IPP50R380CE, IPA50R380CE
IPI50R380CE
1 Description
CoolMOS™ is a revolutionary technology for high voltage power
MOSFETs, designed according to the superjunction (SJ) principle and
pioneered by Infineon Technologies. CoolMOS™ CE series combines
the experience of the leading SJ MOSFET supplier with high class
innovation. The resulting devices provide all benefits of a fast switching
SJ MOSFET while not sacrificing ease of use. Extremely low switching
and conduction losses make switching applications even more efficient,
more compact, lighter, and cooler.
Features
• Extremely low losses due to very low FOM R
• Very high commutation ruggedness
• Easy to use/drive
• JEDEC
1)
qualified, Pb-free plating, Halogen free
dson*Qg and Eoss
Applications
PFC stages, hard switching PWM stages and resonant switching PWM
stages for e.g. PC Silverbox, Adapter, LCD & PDP TV
Please note: For MOSFET paralleling the use of ferrite beads on the gate
or separate totem poles is generally recommended.
Table 1 Key Performance Parameters
Parameter Value Unit
V
@ T
DS
R
DS(on),max
Q
I
D,pulse
E
oss
Body diode d
j,max
g,typ
@ 400V 2.8 µJ
i/dt 500 A/µs
550 V
0.38
32 nC
30 A
Type / Ordering Code Package Marking Related Links
IPP50R
380CE PG-TO220
IFX Design tools
IPA50R380CE PG-TO220 FullPAK 5R380CE
IPI50R380CE P
G-TO262
1) J-STD20 and JESD22
Final Data Sheet 2 Rev. 2.0, 2010-08-27
Page 3
500V CoolMOS™ CE Power Transistor
IPx50R380CE
Table of Contents
Table of Contents
1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
6 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
7 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
8 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Final Data Sheet 3 Rev. 2.0, 2010-08-27
Page 4
500V CoolMOS™ CE Power Transistor
IPx50R380CE
Maximum ratings
2 Maximum ratings
at Tj = 25 °C, unless otherwise specified.
Table 2Maximum ratings
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Continuous drain current
Pulsed drain current
1)
2)
Avalanche energy, single pulse E
Avalanche energy, repetitive E
Avalanche current, repetitive I
MOSFET dv/dt ruggedness dv/dt - - 50 V/ns V
Gate source voltage V
Power dissipation for FullPAK P
Operating and storage temperature T
Mounting torque
TO-220 FullPAK
Continuous diode forward current I
Diode pulse current
Reverse diode dv/dt
2)
3)
Maximum diode commutation
3)
d
spee
1) Limited by T
2) Pulse width tp limited by T
3) Identical low side and high side switch with identical R
Maximum duty cycle D=0.75
j,max.
j,max
I
D
I
D,pulse
AS
- - 10.6 A TC= 25 °C
6.7 T
= 100°C
C
- - 30 A TC=25 °C
- - 210 mJ ID=1.8 A,VDD=50 V
(see table 21)
AR
AR
GS
- - 0.32 ID=1.8 A,VDD=50 V
- - 1.8 A
=0...480 V
DS
-20 - 20 V static
-30 30 AC (f>1 Hz)
tot
j,Tstg
- - 31 W TC=25 °C
-55 - 150 °C
50 Ncm M2.5 screws
S
I
S,pulse
- - 9.2 A TC=25 °C
- - 30 A TC=25 °C
dv/dt - - 15 V/ns VDS=0...480 V,I
T
=125 °C
j
dif/dt 500 A/µs (see table 22)
G
SD
I
D
,
Table 3 Thermal characteristics TO-220FullPAK
Parameter Symbol Values Unit Note /
st Condition
Te
Thermal resistance, junction - case
Thermal resistance, junction -
Min. Typ. Max.
R
thJC
R
thJA
- - 4.3 °C/W
- - 80 leaded
ambient
Soldering temperature,
wavesoldering only
allowed at
T
sold
- - 260 °C 1.6 mm (0.063 in.)
from case for 10 s
leads
Final Data Sheet 4 Rev. 2.0, 2010-08-27
Page 5
500V CoolMOS™ CE Power Transistor
IPx50R380CE
Thermal characteristics
3 Thermal characteristics
Table 3 Thermal characteristics TO-220 & TO-262
Parameter Symbol Values Unit Note /
Min. Typ. Max.
Thermal resistance, junction - case
Thermal resistance, junction -
R
thJC
R
thJA
-- 1.5°C/W
- - 62 leaded
ambient
Soldering temperature,
T
sold
- - 260 °C 1.6 mm (0.063 in.)
wavesoldering only allowed at
leads
Table 4 Thermal characteristics TO-220FullPAK
Parameter Symbol Values Unit Note /
Min. Typ. Max.
Thermal resistance, junction - case
Thermal resistance, junction -
R
thJC
R
thJA
-- 4.0°C/W
- - 80 leaded
ambient
Soldering temperature,
T
sold
- - 260 °C 1.6 mm (0.063 in.)
wavesoldering only allowed at
leads
Test Condition
from case for 10 s
Test Condition
from case for 10 s
Final Data Sheet 5 Rev. 2.0, 2010-08-27
Page 6
500V CoolMOS™ CE Power Transistor
IPx50R380CE
Electrical characteristics
4 Electrical characteristics
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Table 5 Static characteristics
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
R
G
500 - - V VGS=0 V, ID=0.25 mA
2.5 3 3.5 VDS=VGS, ID=0.32 mA
-- 1µAVDS=500 V, VGS=0 V,
T
=25 °C
j
V
-10-
=500 V, VGS=0 V,
DS
T
=150 °C
j
- - 100 nA VGS=20 V, VDS=0 V
-0.340.38 VGS=10 V, ID=3.8 A,
T
=25 °C
j
V
-0.89-
=10 V, ID=3.8 A,
GS
T
=150 °C
j
-7.5- f=1 MHz, open drain
Table 6 Dynamic characteristics
Parameter Symbol Values Unit Note /
Test Condition
f=1 MHz
V
=0...480 V
DS
V
=0...480V
DS
V
=13 V, ID=4.8A,
GS
R
=3.4
G
(see table 20)
Input capacitance
Output capacitance
Effective output capacitance,
energy related
1)
Effective output capacitance, time
related
2)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
1) C
2) C
is a fixed capacitance that gives the same stored energy as C
o(er)
is a fixed capacitance that gives the same charging time as C
o(tr)
C
C
C
C
t
d(on)
t
r
t
d(off)
t
f
iss
oss
o(er)
o(tr)
Min. Typ. Max.
-700- pFVGS=0 V, VDS=100 V,
-46-
-30- VGS=0 V,
-136- ID=constant, VGS=0 V
-11- nsVDD=400 V,
-9-
-56-
-8-
while VDS is rising from 0 to 480 V
oss
while VDS is rising from 0 to 480 V
oss
Final Data Sheet 6 Rev. 2.0, 2010-08-27
Page 7
500V CoolMOS™ CE Power Transistor
IPx50R380CE
Electrical characteristics
Table 7 Gate charge characteristics
Parameter Symbol Values Unit Note /
Test Condition
V
=0 to 10 V
GS
IGate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Q
Q
Q
V
plateau
Min. Typ. Max.
gs
gd
g
-4- nCVDD=480 V, ID=4.8 A,
-16-
-32-
-5.4- V
Table 8 Reverse diode characteristics
Parameter Symbol Values Unit Note /
Test Condition
T
=25 °C
j
d
i
/dt=100 A/µs
F
(see table 22)
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Min. Typ. Max.
V
SD
t
rr
Q
rr
I
rrm
-0.9- VVGS=0 V, IF=4.8A,
-290- nsVR=400 V, IF=4.8 A,
-3.3- µC
-21- A
Final Data Sheet 7 Rev. 2.0, 2010-08-27
Page 8
500V CoolMOS™ CE Power Transistor
5 Electrical characteristics diagrams
Table 9
Power dissipation
non FullPAK
Power dissipation
FullPAK
IPx50R380CE
Electrical characteristics diagrams
P
= f(TC) P
tot
Table 10
Max. transient thermal impedance
non FullPAK
= f(TC)
tot
Max. transient thermal impedance
FullPAK
Z
=f(tp); parameter: D=tp/T Z
(thJC)
=f(tp); parameter: D=tp/T
(thJC)
Final Data Sheet 8 Rev. 2.0, 2010-08-27
Page 9
500V CoolMOS™ CE Power Transistor
IPx50R380CE
Table 11
Safe operating area
non FullPAK
T
C
=25 °C
Electrical characteristics diagrams
Safe operating area TC=25 °C
FullPAK
I
=f(VDS); TC=25 °C; D=0; parameter t
D
Table 12
T
Safe operating area
=80 °C
C
non FullPAK
I
p
=f(VDS); TC=25 °C; D=0; parameter t
D
p
Safe operating area TC=80 °C
FullPAK
I
=f(VDS); TC=80 °C; D=0; parameter t
D
p
ID=f(VDS); TC=80 °C; D=0; parameter t
p
Final Data Sheet 9 Rev. 2.0, 2010-08-27
Page 10
Table 13
Typ. output characteristics T
500V CoolMOS™ CE Power Transistor
Electrical characteristics diagrams
=25 °C Typ. output characteristics Tj=125 °C
j
IPx50R380CE
I
=f(VDS); Tj=25 °C; parameter: V
D
GS
ID=f(VDS); Tj=125 °C; parameter: V
Table 14
Typ. drain-source on-state resistance Drain-source on-state resistance
GS
R
=f(ID); Tj=125 °C; parameter: V
DS(on)
GS
R
=f(Tj); ID=3.8 A; VGS=10 V
DS(on)
Final Data Sheet 10 Rev. 2.0, 2010-08-27
Page 11
500V CoolMOS™ CE Power Transistor
IPx50R380CE
Table 15
Typ. transfer characteristics Typ. gate charge
Electrical characteristics diagrams
=f(VGS); VDS=20V
I
D
V
GS
=f(Q
), ID=4.8A pulsed
gate
Table 16
Avalanche energy Min. drain-source breakdown voltage
E
=f(Tj); ID=1.8 A; VDD=50 V V
AS
=f(Tj); ID=0.25 mA
BR(DSS)
Final Data Sheet 11 Rev. 2.0, 2010-08-27
Page 12
Table 17
Typ. capacitances Typ. C
500V CoolMOS™ CE Power Transistor
IPx50R380CE
Electrical characteristics diagrams
stored energy
oss
C=f(V
); VGS=0 V; f=1 MHz E
DS
Table 18
Forward characteristics of reverse diode
OSS
=f(VDS)
I
=f(VSD); parameter: T
F
j
Final Data Sheet 12 Rev. 2.0, 2010-08-27
Page 13
500V CoolMOS™ CE Power Transistor
V
DS
V
GS
V
DS
V
GS
t
d(on)
t
d( o f f)
t
r
t
on
t
f
t
off
10%
90%
V
DS
I
D
V
DS
V
D
V
(BR)DS
I
D
V
DS
V
DS
I
D
R
G1
R
G2
RG1= R
G2
Ι
F
dit/d
t
rr
10%
90%
Ι
RRM
RRM
Ι
t
RRM
Ι
v
SIL00088
Q
F
v
i
F
Q
S
RRM
V
S
tt
F
/didrrt
rr
ttSt
F
=+
=
rr
QQ
SF
+
Q
6 Test circuits
Table 19 Switching times test circuit and waveform for inductive load
Switching times test circuit for inductive load Switching time waveform
IPx50R380CE
Test circuits
Table 20 Unclamped inductive load test circuit and waveform
Unclamped inductive load test circuit Unclamped inductive waveform
Table 21 Test circuit and waveform for diode characteristics
Test circuit for diode characteristics Diode recovery waveform
Final Data Sheet 13 Rev. 2.0, 2010-08-27
Page 14
7 Package outlines
500V CoolMOS™ CE Power Transistor
IPx50R380CE
Package outlines
Figure 1 Outlines TO-220, dimensions in mm/inches
Final Data Sheet 14 Rev. 2.0, 2010-08-27
Page 15
500V CoolMOS™ CE Power Transistor
IPx50R380CE
Package outlines
Figure 2 Outlines TO-220 FullPAK, dimensions in mm/inches
Final Data Sheet 15 Rev. 2.0, 2010-08-27
Page 16
500V CoolMOS™ CE Power Transistor
IPx50R380CE
Package outlines
Figure 3 Outlines TO-262, dimensions in mm/inches
Final Data Sheet 16 Rev. 2.0, 2010-08-27
Page 17
8 Revision History
CoolMOS CE 500V CoolMOS™ CE Power Transistor
Revision History: 2010-08-27, Rev. 2.0
Previous Revision:
Revision Subjects (major changes since last revision)
2.0 Release of final data sheet
We Listen to Your Comments
500V CoolMOS™ CE Power Transistor
IPx50R380CE
Revision History
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Your feedback will help us to continuously improve the quality of this document.
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Edition 2010-08-27
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2010 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
Final Data Sheet 17 Rev. 2.0, 2010-08-27
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