Datasheet ipd65r380c62.1 Datasheet

MOSFET

Metal Oxide Semiconductor Field Effect Transistor

CoolMOS C6

650V CoolMOS™ C6 Power Transistor
IPx65R380C6

Data Sheet

Rev. 2.1, 2011-02-17
Final

Industrial & Multimarket

drain
pin 2

gate
pin 1

source
pin 3

650V CoolMOS™ C6 Power Transistor IPD65R380C6, IPI65R380C6

IPB65R380C6, IPP65R380C6

IPA65R380C6

1 Description

CoolMOS™ is a revolutionary technology for high voltage power
MOSFETs, designed according to the superjunction (SJ) principle
and pioneered by Infineon Technologies. CoolMOS™ C6 series combines
the experience of the leading SJ MOSFET supplier with high class
innovation. The resulting devices provide all benefits of a fast switching
SJ MOSFET while not sacrificing ease of use. Extremely low switching
and conduction losses make switching applications even more efficient,
more compact, lighter, and cooler.

Features

• Extremely low losses due to very low FOM R

• Very high commutation ruggedness

• Easy to use/drive

• Qualified for industrial grade applications according to JEDEC

• Pb-free plating, Halogen free

2)

free for mold compound

dson*Qg and Eoss

1)

Applications

PFC stages, hard switching PWM stages and resonant switching PWM sta ges
for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom,
UPS and Solar.

Please note: For MOSFET paralleling the use of ferrite beads on the gate or
separate totem poles is generally recommended.

Table 1 Key Performance Parameters

Parameter Value Unit

V

@ T

DS

R

DS(on),max

Q
I

D,pulse

E

oss

Body diode d

j,max

g,typ

@ 400V 2.8 µJ

i/dt 500 A/µs

700 V

0.38 
39 nC
29 A

Type / Ordering Code Package Marking Related Links

IPD65R380C6 PG-TO252 IFX CoolMOS Webpage
IPI65R380C6 PG-TO262 IFX Design tools
IPB65R380C6 PG-TO263 65C6380
IPP65R380C6 PG-TO220
IPA65R380C6 PG-TO220 FullPAK

1) J-STD20 and JESD22

2) no PG-To252

Final Data Sheet 2 Rev. 2.1, 2011-02-17

650V CoolMOS™ C6 Power Transistor

IPx65R380C6

Table of Contents

Table of Contents

1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

6 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

7 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

8 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

Final Data Sheet 3 Rev. 2.1, 2011-02-17

650V CoolMOS™ C6 Power Transistor

IPx65R380C6

Maximum ratings

2 Maximum ratings

at Tj = 25 °C, unless otherwise specified.

Table 2Maximum ratings
Parameter Symbol Values Unit Note / Test Condition

Min. Typ. Max.

Continuous drain current

Pulsed drain current
Avalanche energy, single pulse E

Avalanche energy, repetitive E
Avalanche current, repetitive I
MOSFET dv/dt ruggedness dv/dt - - 50 V/ns VDS=0...480 V
Gate source voltage V

Power dissipation for 
TO-220, TO-252, TO-262, TO-263

Power dissipation for 
TO-220 FullPAK

Operating and storage temperature Tj,T
Mounting torque

TO-220
Mounting torque

TO-220 FullPAK
Continuous diode forward current I
Diode pulse current
Reverse diode dv/dt

Maximum diode commutation

3)

speed

1) Limited by T

2) Pulse width tp limited by T

3) Identical low side and high side switch with identical R

j,max.

1)

2)

2)

3)

I

D

I

D,pulse

AS

AR

AR

GS

P

tot

P

tot

stg

S

I

S,pulse

dv/dt - - 15 V/ns VDS=0...400 V,I

dif/dt 500 A/µs

Maximum duty cycle D=0.75

j,max

- - 10.6 A TC= 25 °C

6.7 TC= 100°C

- - 29 A TC=25 °C

- - 215 mJ ID=1.8 A,VDD=50 V
(see table 21)

- - 0.32 ID=1.8 A,VDD=50 V

- - 1.8 A

-20 - 20 V static

-30 30 AC (f>1 Hz)

- - 83 W TC=25 °C

- - 31 W TC=25 °C

-55 - 150 °C

- - 60 Ncm M3 and M3.5 screws

50 M2.5 screws

- - 9.2 A TC=25 °C

- - 29 A TC=25 °C

 I

SD

Tj=25 °C

G

D

,

Final Data Sheet 4 Rev. 2.1, 2011-02-17

650V CoolMOS™ C6 Power Transistor

Thermal characteristics

3 Thermal characteristics

Table 3 Thermal characteristic s TO -2 2 0 & TO -2 62
Parameter Symbol Values Unit Note /

Min. Typ. Max.

Thermal resistance, junction - case
Thermal resistance, junction -

R

thJC

R

thJA

--1.5°C/W

- - 62 leaded

ambient
Soldering temperature,

T

sold

- - 260 °C 1.6 mm (0.063 in.)
wavesoldering only allowed at
leads

Table 4 Thermal characteristics TO-220FullPAK
Parameter Symbol Values Unit Note /

Min. Typ. Max.

Thermal resistance, junction - case
Thermal resistance, junction -

R

thJC

R

thJA

--4.0°C/W

- - 80 leaded
ambient

Soldering temperature,

T

sold

- - 260 °C 1.6 mm (0.063 in.)
wavesoldering only allowed at
leads

Test Condition

from case for 10 s

Test Condition

from case for 10 s

IPx65R380C6

Table 5 Thermal characteristic s TO -2 6 3 & TO -2 52
Parameter Symbol Values Unit Note /

Test Condition

on PCB, minimal

Thermal resistance, junction - case
Thermal resistance, junction -

ambient

Min. Typ. Max.

R

thJC

R

thJA

--1.5°C/W

- - 62 SMD version, device

footprint

35 SMD version, device

2

cooling

Soldering temperature,

on PCB, 6cm

1)

area

T

sold

- - 260 °C reflow MSL1
wave- & reflowsoldering allowed

1) Device on 40mm*40mm*1.5 epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain connection. PCB is

vertical without air stream cooling.

Final Data Sheet 5 Rev. 2.1, 2011-02-17

650V CoolMOS™ C6 Power Transistor

IPx65R380C6

Electrical characteristics

4 Electrical characteristics

Electrical characteristics, at Tj=25 °C, unless otherwise specified

Table 6 Static characteristics
Parameter Symbol Values Unit Note / Test Condition

Min. Typ. Max.

Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current

Gate-source leakage current
Drain-source on-state resistance

Gate resistance

V

(BR)DSS

V

GS(th)

I

DSS

I

GSS

R

DS(on)

R

G

650 - - V VGS=0 V, ID=1.0 mA

2.5 3 3.5 VDS=VGS, ID=0.32 mA

--1µAVDS=600 V, VGS=0 V,

T

=25 °C

j

-10-

V

=600 V, VGS=0 V,

DS

T

=150 °C

j

- - 100 nA VGS=20 V, VDS=0 V

-0.340.38 VGS=10 V, ID=3.2 A,

T

=25 °C

j

-0.89-

V

=10 V, ID=3.2 A,

GS

T

=150 °C

j

-17- f=1 MHz, open drain

Table 7 Dynamic characteristics
Parameter Symbol Values Unit Note /

Test Condition

f=1 MHz

V

=0...480 V

DS

V

=0...480V

DS

V

=13 V, ID=4.9A,

GS

R

=3.4 

G

(see table 20)

Input capacitance
Output capacitance
Effective output capacitance,

energy related

1)

Effective output capacitance, time
related

2)

Turn-on delay time
Rise time
Turn-off delay time
Fall time

1) C

2) C

is a fixed capacitance that gives the same stored energy as C

o(er)

is a fixed capacitance that gives the same charging time as C

o(tr)

C
C
C

C

t

d(on)

t

r

t

d(off)

t

f

iss
oss
o(er)

o(tr)

Min. Typ. Max.

-710-pFVGS=0 V, VDS=100 V,

-41-

-32- VGS=0 V,

-140- ID=constant, VGS=0 V

-12-nsVDD=400 V,

-12-

-110-

-11-

while VDS is rising from 0 to 80% V

oss

while VDS is rising from 0 to 80% V

oss

(BR)DSS

(BR)DSS

Final Data Sheet 6 Rev. 2.1, 2011-02-17

650V CoolMOS™ C6 Power Transistor

IPx65R380C6

Electrical characteristics

Table 8 Gate charge characteristics
Parameter Symbol Values Unit Note /

Test Condition

V

=0 to 10 V

GS

IGate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage

Q
Q
Q
V

plateau

Min. Typ. Max.

gs
gd
g

-4-nCVDD=480 V, ID=4.9 A,

-20-

-39-

-5.5-V

Table 9 Reverse diode characteristics
Parameter Symbol Values Unit Note /

Test Condition

T

=25 °C

j

d

i

/dt=100 A/µs

F

(see table 22)

Diode forward voltage

Reverse recovery time
Reverse recovery charge
Peak reverse recovery current

Min. Typ. Max.

V

SD

t

rr

Q

rr

I

rrm

-0.9-VVGS=0 V, IF=4.9A,

-280-nsVR=400 V, IF=4.9 A,

-2.8-µC

-17-A

Final Data Sheet 7 Rev. 2.1, 2011-02-17

650V CoolMOS™ C6 Power Transistor

IPx65R380C6

5 Electrical characteristics diagrams

Table 10
Power dissipation

Non FullPAK

Power dissipation
FullPAK

Electrical characteristics diagrams

P

= f(TC) P

tot

Table 11
Max. transient thermal impedance

Non FullPAK

= f(TC)

tot

Max. transient thermal impedance
FullPAK

Z

=f(tp); parameter: D=tp/T Z

(thJC)

=f(tp); parameter: D=tp/T

(thJC)

Final Data Sheet 8 Rev. 2.1, 2011-02-17

650V CoolMOS™ C6 Power Transistor

IPx65R380C6

Table 12
Safe operating area

Non FullPAK

T

C

=25 °C

Electrical characteristics diagrams

Safe operating area TC=25 °C
FullPAK

I

=f(VDS); TC=25 °C; VGS > 7V; D=0; parameter t

D

Table 13
Safe operating area

T

C

=80 °C

Non FullPAK

I

p

=f(VDS); TC=25 °C; VGS > 7V; D=0; parameter t

D

p

Safe operating area TC=80 °C
FullPAK

I

=f(VDS); TC=80 °C; VGS > 7V; D=0; parameter t

D

ID=f(VDS); TC=80 °C; VGS > 7V; D=0; parameter t

p

p

Final Data Sheet 9 Rev. 2.1, 2011-02-17

650V CoolMOS™ C6 Power Transistor

IPx65R380C6

Table 14
Typ. output characteristics

Electrical characteristics diagrams

T

=25 °C Typ. output characteristics Tj=125 °C

C

I

=f(VDS); Tj=25 °C; parameter: V

D

GS

ID=f(VDS); Tj=125 °C; parameter: V

Table 15
Typ. drain-source on-state resistance Drain-source on-state resistance

GS

R

=f(ID); Tj=125 °C; parameter: V

DS(on)

GS

R

=f(Tj); ID=4.9 A; VGS=10 V

DS(on)

Final Data Sheet 10 Rev. 2.1, 2011-02-17

650V CoolMOS™ C6 Power Transistor

IPx65R380C6

Table 16

Typ. transfer characteristics Typ. gate charge

Electrical characteristics diagrams

I

=f(VGS); VDS=20V

D

V

GS

=f(Q

), ID=4.9 A pulsed

gate

Table 17

Avalanche energy Drain-source breakdown voltage

E

=f(Tj); ID=1.8 A; VDD=50 V V

AS

=f(Tj); ID=1.0 mA

BR(DSS)

Final Data Sheet 11 Rev. 2.1, 2011-02-17

650V CoolMOS™ C6 Power Transistor

IPx65R380C6

Table 18

Typ. capacitances Typ. C

stored energy

oss

Electrical characteristics diagrams

C=f(V

); VGS=0 V; f=1 MHz E

DS

Table 19

Forward characteristics of reverse diode

OSS

=f(VDS)

I

=f(VSD); parameter: T

F

j

Final Data Sheet 12 Rev. 2.1, 2011-02-17

650V CoolMOS™ C6 Power Transistor

V

DS

V

GS

V

DS

V

GS

t

d(on)

t

d( o f f)

t

r

t

on

t

f

t

off

10%

90%

V

DS

I

D

V

DS

V

D

V

(BR)DS

I

D

V

DS

V

DS

I

D

R

G1

R

G2

RG1= R

G2

Ι

F

dit/d

t

rr

10%

90%

Ι

RRM

RRM

Ι

t

RRM

Ι

v

SIL00088

Q

F

v

i

F

Q

S

RRM

V

S

tt

F

/didrrt

rr

ttSt

F

=+

=

rr

QQ

SF

+

Q

6 Test circuits

Table 20 Switching times test circuit and waveform for inductive load
Switching times test circuit for inductive load Switching time waveform

IPx65R380C6

Test circuits

Table 21 Unclamped inductive load test circuit and waveform
Unclamped inductive load test circuit Unclamped inductive waveform

Table 22 Test circuit and waveform for diode characteristics
Test circuit for diode characteristics Diode recovery waveform

Final Data Sheet 13 Rev. 2.1, 2011-02-17

7 Package outlines

650V CoolMOS™ C6 Power Transistor

IPx65R380C6

Package outlines

Figure 1 Outlines TO-252, dimensions in mm/inches

Final Data Sheet 14 Rev. 2.1, 2011-02-17

650V CoolMOS™ C6 Power Transistor

IPx65R380C6

Package outlines

Figure 2 Outlines TO-220, dimensions in mm/inches

Final Data Sheet 15 Rev. 2.1, 2011-02-17

650V CoolMOS™ C6 Power Transistor

IPx65R380C6

Package outlines

Figure 3 Outlines TO-220 FullPAK, dimensions in mm/inches

Final Data Sheet 16 Rev. 2.1, 2011-02-17

650V CoolMOS™ C6 Power Transistor

IPx65R380C6

Package outlines

Figure 4 Outlines TO-262, dimensions in mm/inches

Final Data Sheet 17 Rev. 2.1, 2011-02-17

650V CoolMOS™ C6 Power Transistor

IPx65R380C6

Package outlines

Figure 5 Outlines TO-263, dimensions in mm/inches

Final Data Sheet 18 Rev. 2.1, 2011-02-17

650V CoolMOS™ C6 Power Transistor

8 Revision History

Revision History: 2011-02-17, Rev. 2.1
Previous Revision:
Revision Subjects (major changes since last revision)

2.0 Release of final data sheet

2.1 Update test condition of reverse diode dv/dt

We Listen to Your Comments

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Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to: [email protected]

IPx65R380C6

Revision History

Edition 2011-02-17
Published by

Infineon Technologies AG
81726 Munich, Germany

© 2011 Infineon Technologies AG
All Rights Reserved.

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infin eon Technologies hereb y disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements, components may contain dangerous substances. For information on the type s in
question, please contact the nearest Infineon Technologies Office.

The Infineon Technologies component described in this Data Sheet may be used in life-support devices or
systems and/or automotive, aviation and aerospace applications or systems only with the expre ss written approval
of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that
life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that
device or system. Life support devices or systems are intended to be implanted in the human body or to support
and/or maintain and sustain and/or protect human li fe. If th ey fail, it is reason able to assume th at the health of the
user or other persons may be endangered

Final Data Sheet 19 Rev. 2.1, 2011-02-17