Page 1
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS C6
600V CoolMOS™ C6 Power Transistor
IPx60R950C6
Data Sheet
Rev. 2.1, 2010-03-11
Final
Industrial & Multimarket
Page 2
drain
pin 2
gate
pin 1
source
pin 3
600V CoolMOS™ C6 Power Transistor IPD60R950C6, IPB60R950C6
IPP60R950C6, IPA60R950C6
1 Description
CoolMOS™ is a revolutionary technology for high voltage power
MOSFETs, designed according to the superjunction (SJ) principle and
pioneered by Infineon Technologies. CoolMOS™ C6 series combines the
experience of the leading SJ MOSFET supplier with high class innovation.
The resulting devices provide all benefits of a fast switching SJ MOSFET
while not sacrificing ease of use. Extremely low switching and conduction
losses make switching applications even more efficient, more compact,
lighter, and cooler.
Features
• Extremely low losses due to very low FOM R
• Very high commutation ruggedness
• Easy to use/drive
• Qualified for industrial grade applications according to JEDEC
• Pb-free plating, Halogen free mold compound
dson*Qg and Eoss
1)
Applications
PFC stages, hard switching PWM stages and resonant switching PWM
stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server,
Telecom and UPS.
Please note: For MOSFET paralleling the use of fer rite be a ds on th e ga te
or separate totem poles is generally recommended.
Table 1 Key Performance Parameters
Parameter Value Unit
V
@ T
DS
R
DS(on),max
Q
I
D,pulse
E
oss
Body diode d
j,max
g,typ
@ 400V 1.3 µJ
i/dt 500 A/µs
650 V
0.95
13 nC
12 A
Type / Ordering Code Package Marking Related Links
IPD60R950C6 PG-TO252
IFX C6 Product Brief
IPB60R950C6 PG-TO263 IFX C6 Portfolio
IPP60R950C6 PG-TO220 6R950C6 IFX CoolMOS Webpage
IPA60R950C6 PG-TO220 FullPAK IFX Design tools
1) J-STD20 and JESD22
FinalData Sheet 2 Rev. 2.1, 2010-03-11
Page 3
600V CoolMOS™ C6 Power Transistor
IPx60R950C6
Table of Contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Table of Contents
FinalData Sheet 3 Rev. 2.1, 2010-03-11
Page 4
600V CoolMOS™ C6 Power Transistor
IPx60R950C6
Maximum Ratings
2 Maximum Ratings
at Tj = 25 °C, unless otherwise specified.
Table 2Maximum ratings
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse E
Avalanche energy, repetitive E
Avalanche current, repetitive I
MOSFET dv/dt ruggedness dv/dt - - 50 V/ns VDS=0...480 V
Gate source voltage V
Power dissipation for
TO-220, TO-252, TO-263
Power dissipation for
TO-220 FullPAK
Operating and storage temperature Tj,T
Mounting torque
TO-220
TO-220FP 50 M2.5 screws
Continuous diode forward current I
Diode pulse current
Reverse diode dv/dt
Maximum diode commutation
3)
speed
1) Limited by T
2) Pulse width tp limited by T
3) Identical low side and high side switch with identical R
j,max.
1)
2)
2)
3)
I
D
I
D,pulse
AS
AR
AR
GS
P
tot
P
tot
stg
S
I
S,pulse
dv/dt - - 15 V/ns VDS=0...480 V, I
dif/dt 500 A/µs (see table 22)
Maximum duty cycle D=0.75
j,max
- - 4.4 A TC= 25 °C
2.8 TC= 100°C
- - 12 A TC=25 °C
- - 46 mJ ID=0.8 A,VDD=50 V
(see table 21)
- - 0.13 ID=0.8 A,VDD=50 V
- - 0.8 A
-20 - 20 V static
-30 30 AC (f>1 Hz)
- - 37 W TC=25 °C
- - 26 W TC=25 °C
-55 - 150 °C
- - 60 Ncm M3 and M3.5 screws
- - 3.9 A TC=25 °C
- - 12 A TC=25 °C
I
SD
Tj=125 °C
G
,
D
FinalData Sheet 4 Rev. 2.1, 2010-03-11
Page 5
600V CoolMOS™ C6 Power Transistor
Thermal characteristics
3 Thermal characteristics
Table 3 Thermal characteristic s TO -2 2 0 (IP P 60 R9 50 C6 )
Parameter Symbol Values Unit Note /
Min. Typ. Max.
Thermal resistance, junction - case
Thermal resistance, junction -
R
thJC
R
thJA
- - 3.41 °C/W
- - 62 leaded
ambient
Soldering temperature,
T
sold
- - 260 °C 1.6 mm (0.063 in.)
wavesoldering only allowed at
leads
Table 4 Thermal characteristics TO-220FullPAK (IPA60R950C6)
Parameter Symbol Values Unit Note /
Min. Typ. Max.
Thermal resistance, junction - case
Thermal resistance, junction -
R
thJC
R
thJA
--4.9°C/W
- - 80 leaded
ambient
Soldering temperature,
T
sold
- - 260 °C 1.6 mm (0.063 in.)
wavesoldering only allowed at
leads
Test Condition
from case for 10 s
Test Condition
from case for 10 s
IPx60R950C6
Table 5 Thermal characteristics TO-263 (IPB60R950C6),TO-252 (IPD60R950C6)
Parameter Symbol Values Unit Note /
Test Condition
on PCB, minimal
Thermal resistance, junction - case
Thermal resistance, junction -
ambient
Min. Typ. Max.
R
thJC
R
thJA
- - 3.41 °C/W
- - 62 SMD version, device
footprint
35 SMD version, device
2
cooling
Soldering temperature,
on PCB, 6cm
1)
area
T
sold
- - 260 °C reflow MSL1
wave- & reflowsoldering allowed
1) Device on 40mm*40mm*1.5 epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain connection. PCB is
vertical without air stream cooling
FinalData Sheet 5 Rev. 2.1, 2010-03-11
Page 6
600V CoolMOS™ C6 Power Transistor
IPx60R950C6
Electrical characteristics
4 Electrical characteristics
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Table 6 Static characteristics
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
R
G
600 - - V VGS=0 V, ID=0.25 mA
2.5 3 3.5 VDS=VGS, ID=0.13 mA
--1µAVDS=600 V, VGS=0 V,
T
=25 °C
j
-10-
V
=600 V, VGS=0 V,
DS
T
=150 °C
j
- - 100 nA VGS=20 V, VDS=0 V
-0.860.95 VGS=10 V, ID=1.5 A,
T
=25 °C
j
-2.22-
V
=10 V, ID=1.5 A,
GS
T
=150 °C
j
-16- f=1 MHz, open drain
Table 7 Dynamic characteristics
Parameter Symbol Values Unit Note /
Test Condition
f=1 MHz
V
=0...480 V
DS
V
=0...480V
DS
V
=10 V, ID=1.9A,
GS
R
= 12.2
G
(see table 20)
Input capacitance
Output capacitance
Effective output capacitance,
energy related
1)
Effective output capacitance, time
related
2)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
1) C
2) C
is a fixed capacitance that gives the same stored energy as C
o(er)
is a fixed capacitance that gives the same charging time as C
o(tr)
C
C
C
C
t
d(on)
t
r
t
d(off)
t
f
iss
oss
o(er)
o(tr)
Min. Typ. Max.
-280-pFVGS=0 V, VDS=100 V,
-21-
-14- VGS=0 V,
-57- ID=constant, VGS=0 V
-10-nsVDD=400 V,
-8-
-60-
-13-
while VDS is rising from 0 to 80% V
oss
while VDS is rising from 0 to 80% V
oss
(BR)DSS
(BR)DSS
FinalData Sheet 6 Rev. 2.1, 2010-03-11
Page 7
600V CoolMOS™ C6 Power Transistor
IPx60R950C6
Electrical characteristics
Table 8 Gate charge characteristics
Parameter Symbol Values Unit Note /
Test Condition
V
=0 to 10 V
GS
IGate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Q
Q
Q
V
plateau
Min. Typ. Max.
gs
gd
g
-1.5-nCVDD=480 V, ID=1.9 A,
-6.5-
-13-
-5.4-V
Table 9 Reverse diode characteristics
Parameter Symbol Values Unit Note /
Test Condition
T
=25 °C
j
d
i
/dt=100 A/µs
F
(see table 22)
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Min. Typ. Max.
V
SD
t
rr
Q
rr
I
rrm
-0.9-VVGS=0 V, IF=1.9 A,
-220-nsVR=400 V, IF=1.9 A,
-1.5-µC
-12-A
FinalData Sheet 7 Rev. 2.1, 2010-03-11
Page 8
600V CoolMOS™ C6 Power Transistor
5 Electrical characteristics diagrams
Table 10
Power dissipation
TO-220, TO-252, TO-263
Power dissipation
TO-220 FullPAK
IPx60R950C6
Electrical characteristics diagrams
P
= f(TC) P
tot
Table 11
Max. transient thermal impedance
TO-220, TO-252, TO-263
= f(TC)
tot
Max. transient thermal impedance
TO-220 FullPAK
Z
=f(tp); parameter: D=tp/T Z
(thJC)
=f(tp); parameter: D=tp/T
(thJC)
FinalData Sheet 8 Rev. 2.1, 2010-03-11
Page 9
600V CoolMOS™ C6 Power Transistor
IPx60R950C6
Table 12
Safe operating area
T
TO-220, TO-252, TO-263
=25 °C
C
Electrical characteristics diagrams
Safe operating area TC=25 °C
TO-220 FullPAK
I
=f(VDS); TC=25 °C; D=0; parameter t
D
Table 13
Safe operating area
T
C
=80 °C
TO-220, TO-252, TO-263
I
p
=f(VDS); TC=25 °C; D=0; parameter t
D
p
Safe operating area TC=80 °C
TO-220 FullPAK
I
=f(VDS); TC=80 °C; D=0; parameter t
D
p
ID=f(VDS); TC=80 °C; D=0; parameter t
p
FinalData Sheet 9 Rev. 2.1, 2010-03-11
Page 10
Table 14
Typ. output characteristics T
600V CoolMOS™ C6 Power Transistor
Electrical characteristics diagrams
=25 °C Typ. output characteristics Tj=125 °C
j
IPx60R950C6
I
=f(VDS); Tj=25 °C; parameter: V
D
GS
ID=f(VDS); Tj=125 °C; parameter: V
Table 15
Typ. drain-source on-state resistance Drain-source on-state resistance
GS
R
=f(ID); Tj=125 °C; parameter: V
DS(on)
GS
R
=f(Tj); ID=1.5A; VGS=10 V
DS(on)
FinalData Sheet 10 Rev. 2.1, 2010-03-11
Page 11
600V CoolMOS™ C6 Power Transistor
IPx60R950C6
Table 16
Typ. transfer characteristics Typ. gate charge
Electrical characteristics diagrams
I
=f(VGS); VDS=20V
D
V
GS
=f(Q
), ID=1.9A pulsed
gate
Table 17
Avalanche energy Drain-source breakdown voltage
E
=f(Tj); ID=0.8A; VDD=50 V V
AS
=f(Tj); ID=0.25 mA
BR(DSS)
FinalData Sheet 11 Rev. 2.1, 2010-03-11
Page 12
Table 18
Typ. capacitances Typ. C
600V CoolMOS™ C6 Power Transistor
IPx60R950C6
Electrical characteristics diagrams
stored energy
oss
C=f(V
); VGS=0 V; f=1 MHz E
DS
Table 19
Forward characteristics of reverse diode
OSS
=f(VDS)
I
=f(VSD); parameter: T
F
j
FinalData Sheet 12 Rev. 2.1, 2010-03-11
Page 13
600V CoolMOS™ C6 Power Transistor
V
DS
V
GS
V
DS
V
GS
t
d(on)
t
d( o f f)
t
r
t
on
t
f
t
off
10%
90%
V
DS
I
D
V
DS
V
D
V
(BR)DS
I
D
V
DS
V
DS
I
D
R
G1
R
G2
RG1= R
G2
Ι
F
dit/d
t
rr
10%
90%
Ι
RRM
RRM
Ι
t
RRM
Ι
v
SIL00088
Q
F
v
i
F
Q
S
RRM
V
S
tt
F
/didrrt
rr
ttSt
F
=+
=
rr
QQ
SF
+
Q
6 Test circuits
Table 20 Switching times test circuit and waveform for inductive load
Switching times test circuit for inductive load Switching time waveform
IPx60R950C6
Test circuits
Table 21 Unclamped inductive load test circuit and waveform
Unclamped inductive load test circuit Unclamped inductive waveform
Table 22 Test circuit and waveform for diode characteristics
Test circuit for diode characteristics Diode recovery waveform
FinalData Sheet 13 Rev. 2.1, 2010-03-11
Page 14
7 Package outlines
600V CoolMOS™ C6 Power Transistor
IPx60R950C6
Package outlines
Figure 1 Outlines TO-252, dimensions in mm/inches
FinalData Sheet 14 Rev. 2.1, 2010-03-11
Page 15
600V CoolMOS™ C6 Power Transistor
IPx60R950C6
Package outlines
Figure 2 Outlines TO-220, dimensions in mm/inches
FinalData Sheet 15 Rev. 2.1, 2010-03-11
Page 16
600V CoolMOS™ C6 Power Transistor
IPx60R950C6
Package outlines
Figure 3 Outlines TO-220 FullPAK, dimensions in mm/inches
FinalData Sheet 16 Rev. 2.1, 2010-03-11
Page 17
600V CoolMOS™ C6 Power Transistor
IPx60R950C6
Package outlines
Figure 4 Outlines TO-263, dimensions in mm/inches
FinalData Sheet 17 Rev. 2.1, 2010-03-11
Page 18
600V CoolMOS™ C6 Power Transistor
IPx60R950C6
8 Revision History
CoolMOS C6 600V CoolMOS™ C6 Power Transistor
Revision History: 2010-03-11, Rev. 2.1
Previous Revision:
Revision Subjects (major changes since last revision)
2.0 Release of final data sheet
2.1 Change typing error table 1 .Body diode= d
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Revision History
Edition 2010-03-11
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2011 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infin eon Technologies hereb y disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or
systems and/or automotive, aviation and aerospace applications or systems only with the expre ss written approval
of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that
life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that
device or system. Life support devices or systems are intended to be implanted in the human body or to support
and/or maintain and sustain and/or protect human li fe. If th ey fail, it is reason able to assume th at the health of the
user or other persons may be endangered.
FinalData Sheet 18 Rev. 2.1, 2010-03-11
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