Datasheet IMX25 Datasheet (ROHM)

General purpose transistor

(isolated dual transistors)

IMX25

Features Dimensions (Unit : mm)

1) Two 2SD2704K chips in a SMT package.

2) Mounting possi ble

3) Transistor

elements are independent, eliminating interference.

with SMT3 automatic mounting machine.

4) Mounting cost and area can be cut in half.

Structure

Epitaxial planar type
NPN silicon transistor

The following characteristics apply to both Tr1 and Tr2.

Absolute maximum ratings (Ta=25C) Inner circuit

Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Storage temperature

∗

Parameter Symbol Limits Unit

V

CBO

CEO

V
V

EBO

I

C

50 V
20 V
25 V

300 mA

Pd 300(TOTAL) mW

Tj 150

Tstg

200mW per element must not be exceeded.

−55 to +150 °C

∗

°C

Electrical characteristics (Ta=25C)

Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Output On-resistance

Symbol

BV
BV
BV

I
I

V

CE(sat)

Cob
Ron

CBO

EBO

h

FE

f

CBO

CEO

EBO

T

Min.

Typ. Max. Unit Conditions
50
20
25

−

−

−

820

−

−

−

50

35

3.9

0.7

−

−

−

0.1

−

0.1

−

100

2700

−

V

−

V

−

V

−

μA
μA

mV

−

MHz

−

pF

−

−

Ω

Packaging specifications

Taping

T110
3000

Part No.
IMX25

Packaging type
Code
Basic ordering unit (pieces)

2.9±0.2

1.9±0.2

0.95 0.95

(5)

(6)

(4)

−0.1

+0.2

1.6

(1)

(2)

(3)

+0.1

0.3

All terminals have same dimensions

ROHM : SMT6
EIAJ : SC-74

−0.05

C

=10μA

I

C

=1mA

I

E

=10μA

I
V

CB

=50V

V

EB

=25V

C/IB

=30mA/3mA

I

CE

=2V, IC=4mA

V
V

CE

=6V, IE=−4mA, f=10MHz

CB

=10V, IE=0A, f=1MHz

V

B

=5mA, Vi=100mVrms, f=1kHz

I

2.8±0.2

0.15

Abbreviated symbol: X25

1.1

0.8±0.1

+0.1

−0.06

(4) (5) (6)

Tr

2

(3) (2) (1)

+0.2

−0.1

0 to 0.1

0.3 to 0.6

Tr

1

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2010.02 - Rev.B

.2

(mA)

n

(mA)

n

.2

0

10000

DC CURRENT GAIN : h

vs. collector current ( )

0

10000

10000

e

vs. collector current ( )

)

10000

)

e

vs. collector current ( )

10000

)

e

vs. collector current ( )

e

0

V)

e

V)

0

Electrical characteristic curves

1000

C

100

10

0.1

COLLECTOR CURRENT : I

0.1
0 0.2 0.4 0.6 0.8 1 1

BASE TO EMITTER VOLTAGE : V

Ta=125°C

25°C

Fig.1 Grounded emitter propagatio
characteristics ( Ι )

Ta=125°C

FE

1000

Ta=25°C

Ta= −40°C

−40°C

BE(ON)

VCE=2V

(V)

VCE=6V

Data Sheet IMX25

1000

C

100

10

0.1

COLLECTOR CURRENT : I

0.1
0 0.2 0.4 0.6 0.8 1 1

BASE TO EMITTER VOLTAGE : V

Ta=125°C

25°C

Fig.2 Grounded emitter propagatio
characteristics ( ΙΙ )

(mV

CE(sat)

1000

100

Ta=125°C

VCE=6V

−40°C

BE(ON)

IC/IB=10/1

(V)

C

(mA)

VCE=2V

Ta=125°C

FE

1000

Ta=25°C

Ta= −40°C

100

10

1 10 100 100

COLLECTOR CURRENT : I

Fig.3 DC current gain

(mV

CE(sat)

1000

100

Ta=125°C

IC/IB=20/1

100

DC CURRENT GAIN : h

10

1 10 100 100

COLLECTOR CURRENT : I

C

(mA)

Fig.4 DC current gain
vs. collector current ( )

(mV

CE(sat)

1000

100

10

COLLECTOR SATURATION VOLTAGE : V

Ta=125°C

Ta=25°C

Ta

= −

40°C

1

1 10 100 1000

COLLECTOR CURRENT : I

Fig.7 Collector-emitter saturation voltag

IC/IB=50/1

C

(mA)





10

1

COLLECTOR SATURATION VOLTAGE : V

1 10 100 1000

COLLECTOR CURRENT : I

Fig.5 Collector-emitter saturation voltag

10000

(m

BE(sat)

Ta

1000

Ta=125°C

100

BASE SATURATION VOLTAGE : V

1 10 100 100

COLLECTOR CURRENT : I

Fig.8 Base-emitter saturation voltag



vs. collector current ( )

Ta

Ta=25°C

= −

40°C

C (mA)

10

1

COLLECTOR SATURATION VOLTAGE : V

1 10 100 1000

COLLECTOR CURRENT : I

Fig.6 Collector-emitter saturation voltag

IC/IB=10/1

= −

40°C

Ta=25°C

C

(mA)



10000

(m

BE(sat)

1000

100

BASE SATURATION VOLTAGE : V

1 10 100 100

COLLECTOR CURRENT : I

Fig.9 Base-emitter saturation voltag
vs. collector current ( )

Ta

Ta

= −

40°C

Ta=125°C

= −

Ta=25°C

40°C

Ta=25°C

C (mA)

IC/IB=20/1

C

(mA)



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2010.02 - Rev.B

e

V)

0

vs. emitter current

0

10000

)

)

0

100

0

100

0

100

ut

1

ut

1

Data Sheet IMX25

10000

(m

BE(sat)

Ta

= −

1000

100

BASE SATURATION VOLTAGE : V

1 10 100 100

40°C

Ta=125°C

COLLECTOR CURRENT : I

Ta=25°C

IC/IB=50/1

C

(mA)

Fig.10 Base-emitter saturation voltag
vs. collector current ( )





Ta= 25°C

(Ω)

10

1

ON RESISTANCE : Ron



f=50MHz

E

=0A



Ta=25°C

E

I

(mA)

(MHz)

T

TRANSITION FREQUENCY : f

1

11010

EMITTER CURRENT : I

Fig.11 Gain bandwidth product

Ta=25°C

(Ω)

10

1

ON RESISTANCE : Ron



(pF

(pF)

10

1

0.1

EMITTER INPUT CAPACITANCE : Cib

COLLECTOR OUTPUT CAPACITANCE : Cob

11010

COLLECTOR TO BASE VOLTAGE : V
EMITTER TO BASE VOLTAGE : V

Fig.12 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage

Ta=25°C

f=1MHz
I

E

=0A

CB

EB

(V)

(V

See Fig.15

0.1

0.01 0.1 1 10
BASE CURRENT : I

B

10

(mA)

Fig.13 Output-on resistance
vs. base current ( )



See Fig.16

0.1

0.01 0.1 1 10
BASE CURRENT : I

B

10

(mA)

Fig.14 Output-on resistance
vs. base current ( )




Ron measurement circuit

RL=1kΩ

Input

V

i

00mV(rms)

1V(rms)

f=1kHz

Ron= ×R

vi−v

Fig.15 Ron measurement circuit ( )

Outp

V

v

0

B

I

v

0

L

0

Input

00mV(rms)

1V(rms)

f=1kHz

RL=1kΩ

V

i

Ron= ×R

Fig.16 Ron measurement circuit ( )

This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.

vi−v



Outp

V

v

0

B

I

v

0

L

0

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2010.02 - Rev.B

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