Datasheet IKW75N60TFKSA1 Specification

IKW75N60T

TRENCHSTOP™ Series q

Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft,

fast recovery anti-parallel Emitter Controlled HE diode

C

 Very low V
 Maximum Junction Temperature 175°C
 Short circuit withstand time 5s
 Positive temperature coefficient in V
 very tight parameter distribution
 high ruggedness, temperature stable behaviour
 very high switching speed
 Low EMI
 Very soft, fast recovery anti-parallel Emitter Controlled HE diode
 Qualified according to JEDEC1)for target applications
 Pb-free lead plating; RoHS compliant
 Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Applications:

 Frequency Converters
 Uninterrupted Power Supply

CE(sat)

1.5V (typ.)

CE(sat)

G

PG-TO247-3

E

Type V

CE

IKW75N60T 600V 75A 1.5V

I

V

C

CE(sat),Tj=25°C

T

j,max

175C

Marking Package

K75T60

PG-TO247-3

Maximum Ratings
Parameter Symbol Value Unit

Collector-emitter voltage, Tj ≥ 25C

TC= 25C

DC collector current, limited by T

Pulsed collector current, tplimited by T

jmax

TC= 100C

jmax

Turn off safe operating area VCE= 600V, Tj= 175C, tp= 1µs

TC= 25C

Diode forward current, limited by T

Diode pulsed current, tplimited by T

jmax

jmax

TC= 100C

Gate-emitter voltage
Short circuit withstand time

3)

VGE= 15V, VCC 400V, Tj 150C
Power dissipation TC= 25C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s

V

CE

I

C

I

Cpu ls

-

I

F

I

Fpu ls

V

GE

t

SC

P

tot

T

j

T

stg

T

sol d

600 V

2)

80

75

225
225

2)

80

75

225
20

5

428 W

-40...+175

-55...+150
260

A

V

s

C

1)

J-STD-020 and JESD-022

2)

Value limited by bondwire

3)

Allowed number of short circuits: <1000; time between short circuits: >1s.

IFAG IPC TD VLS

1 Rev. 2.8 2013-12-05

IKW75N60T

TRENCHSTOP™ Series q

Thermal Resistance
Parameter Symbol Conditions Max. Value Unit
Characteristic

IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient

Electrical Characteristic, at Tj= 25 C, unless otherwise specified

Parameter Symbol Conditions

Static Characteristic

Collector-emitter breakdown voltage
Collector-emitter saturation voltage

Diode forward voltage

Gate-emitter threshold voltage
Zero gate voltage collector current

Gate-emitter leakage current
Transconductance
Integrated gate resistor

R

thJ C

R

thJ CD

R

thJ A

V

(BR)C ESVGE

V

CE(sa t)

V

F

V

GE( th )

I

CES

I

GES

g

fs

R

Gint

=0V, IC=0.2mA
VGE= 15V, IC=75A
Tj=25C
Tj=175 C
VGE=0V, IF=75A
Tj=25C
Tj=175 C
IC=1.2mA,VCE=V

GE

VCE=600V,
VGE=0V

Tj=25C
Tj=175 C

VCE=0V,VGE=20V
VCE=20V, IC=75A

0.35 K/W

0.6

40

Value

min. Typ. max.

600 - - V

-

-

-

-

1.5

1.9

1.65

1.6

2.0

-

2.0

-

4.1 4.9 5.7

-

-

-

-

40

5000

- - 100 nA

- 41 - S

- Ω

Unit

µA

Dynamic Characteristic

Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge

Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current

Allowed number of short circuits: <1000; time
between short circuits: >1s.

IFAG IPC TD VLS

C

iss

C

oss

C

rss

Q

Gat e

L

E

I

C(SC)

VCE=25V,
VGE=0V,
f=1MHz

VCC=480V, IC=75A

-

-

-

4620

288
137

- pF

-

-

- 470 - nC

VGE=15V

- 13 - nH

VGE=15V,tSC 5s

- 690 - A

VCC= 400V,
Tj 150C

2 Rev. 2.8 2013-12-05

TRENCHSTOP™ Series q

Switching Characteristic, Inductive Load, at Tj=25 C

Parameter Symbol Conditions

IGBT Characteristic

Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy

Anti-Parallel Diode Characteristic

Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse

recovery current during t

b

t

d(on)

t

r

t

d(off )

t

f

E

on

E

off

E

ts

t

rr

Q

rr

I

rrm

dirr/dt

Tj=25 C,
VCC=400V,IC=75A,
VGE=0/15V,
rG=5 , L=100nH,
C=39pF

L, Cfrom Fig. E

Energy losses include
“tail” and diode reverse
recovery.

Tj=25C,
VR=400V, IF=75A,
diF/dt=1460A/s

IKW75N60T

Value

min. typ. max.

- 33 - ns

- 36 -

- 330 -

- 35 -

- 2.0 - mJ

- 2.5 -

- 4.5 -

- 121 - ns

- 2.4 - µC

- 38.5 - A

- 921 -

Unit

A/s

Switching Characteristic, Inductive Load, at Tj=175 C

Parameter Symbol Conditions

IGBT Characteristic

Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy

t

d(on)

t

r

t

d(off )

t

f

E

on

E

off

E

ts

Tj=175 C,
VCC=400V,IC=75A,
VGE=0/15V,
rG=5 , L=100nH,
C=39pF

L, Cfrom Fig. E

Energy losses include
“tail” and diode reverse
recovery.

Anti-Parallel Diode Characteristic

Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse

recovery current during t

b

t

rr

Q

rr

I

rrm

dirr/dt

Tj=175 C
VR=400V, IF=75A,
diF/dt=1460A/s

Value

min. typ. max.

- 32 - ns

- 37 -

- 363 -

- 38 -

- 2.9 - mJ

- 2.9 -

- 5.8 -

- 182 - ns

- 5.8 - µC

- 56.2 - A

- 1013 -

Unit

A/s

IFAG IPC TD VLS

3 Rev. 2.8 2013-12-05

200A

Figure

1.Collector current as a function of

Figure

2.Safe operating area

Figure

3.Power dissipation as a function of

Figure

4.DC

Collector current as a function

I

c

I

c

150A

IKW75N60T

TRENCHSTOP™ Series q

TC=80°C

100A

, COLLECTOR CURRENT

50A

C

I

0A

10Hz 100Hz 1kHz 10kHz 100kHz

TC=110°C

f, SWITCHING FREQUENCY VCE, COLLECTOR-EMITTER VOLTAGE

switching frequency

(Tj 175C, D = 0.5, VCE= 400V,
VGE= 0/15V, rG= 5)

400W

350W

, COLLECTOR CURRENT

C

I

(D = 0, TC= 25C, Tj175C;
VGE=0/15V)

120A

300W

250W

200W

150W

, POWER DISSIPATION

tot

P

100W

50W

0W

25°C 50°C 75°C 100°C 125°C 150°C

TC, CASE TEMPERATURE TC, CASE TEMPERATURE

case temperature

(Tj 175C)

IFAG IPC TD VLS

90A

60A

, COLLECTOR CURRENT

C

I

30A

0A

25°C 75°C 125°C

of case temperature

(VGE 15V, Tj 175C)

4 Rev. 2.8 2013-12-05

IKW75N60T

120A

Figure

5.Typical output characterist

ic

Figure

6.Typical output characteristic

Figure

7.Typical transfer characteristic

Figure

8.Typical collector

-

emitter

TRENCHSTOP™ Series q

VGE=20V

15V

90A

60A

, COLLECTOR CURRENT

C

I

30A

0A

13V

11V

9V
7V

0V 1V 2V 3V

120A

, COLLECTOR CURRENT

C

I

VGE=20V

15V

90A

60A

30A

0A

13V
11V

9V
7V

0V 1V 2V 3V

VCE, COLLECTOR-EMITTER VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE

(Tj= 25°C)

(Tj= 175°C)

80A

60A

40A

, COLLECTOR CURRENT

C

I

20A

0A

0V 2V 4V 6V 8V

V

, GATE-EMITTER VOLTAGE T

GE

TJ=175°C

25°C

(VCE=20V)

2.5V

2.0V

1.5V

1.0V

0.5V

COLLECTOR-EMITT SATURATION VOLTAGE

CE(sat),

0.0V

V

0°C 50°C 100°C 150°C

, JUNCTION TEMPERATURE

J

saturation voltage as a function of
junction temperature

(VGE= 15V)

IC=150A

IC=75A

IC=37.5A

IFAG IPC TD VLS

5 Rev. 2.8 2013-12-05

IKW75N60T

100ns

Figure

9.Typical switching times as a

Figure

10.Typical switching times as a

100ns

7V

Figure

11.Typical switching times as a

Figure

12.Gate

-

emitter threshold voltage as

TRENCHSTOP™ Series q

t

d(off)

t

d(off)

100ns

t

f

t

f

t

r

t, SWITCHING TIMES

t

d(on)

t

r

10ns

0A 40A 80A 120A

t, SWITCHING TIMES

10ns

  

t

d(o n)

IC, COLLECTOR CURRENT RG, GATE RESISTOR

function of collector current

(inductive load, TJ=175°C,
VCE= 400V, VGE= 0/15V, r

= 5Ω,

G

Dynamic test circuit in Figure E)

t

d(off)

6V

5V

4V

function of gate resistor

(inductive load, TJ= 175°C,
VCE= 400V, VGE= 0/15V, IC= 75A,

Dynamic test circuit in Figure E)

max.

typ.

min.

t, SWITCHING TIMES

25°C 50°C 75°C 100°C 125°C 150°C

TJ, JUNCTION TEMPERATURE TJ, JUNCTION TEMPERATURE

function of junction temperature

(inductive load, VCE= 400V,
VGE= 0/15V, IC= 75A, r
Dynamic test circuit in Figure E)

IFAG IPC TD VLS

3V

t

t

r

f

t

d(on)

2V

GATE-EMITT TRSHOLD VOLTAGE

1V

GE(th),

V

0V

-50°C 0°C 50°C 100°C 150°C

a function of junction temperature

(IC= 1.2mA)

=5Ω,

G

6 Rev. 2.8 2013-12-05

IKW75N60T

0.0mJ

2.0mJ

4.0mJ

6.0mJ

8.0mJ

Figure

13.Typical switching energy losses

Figure

14

. Typical switching energy losses

Figure

15.Typical switching energy losses

Figure

16.Typical switching energy losses

TRENCHSTOP™ Series q

E, SWITCHING ENERGY LOSSES

*) Eonand Etsinclude losses

due to diode recovery

8.0mJ

4.0mJ

0.0mJ
0A 20A 40A 60A 80A 100A 120A 140A

IC, COLLECTOR CURRENT RG, GATE RESISTOR

as a function of collector current

(inductive load, TJ= 175°C,
VCE= 400V, VGE= 0/15V, r

Dynamic test circuit in Figure E)

= 5Ω,

G

Ets*

Eon*

E

off

*) Eonand Etsinclude losses

due to diode recovery

Eon*

E, SWITCHING ENERGY LOSSES

    

E

off

as a function of gate resistor

(inductive load, TJ= 175°C,
VCE= 400V, VGE= 0/15V, IC= 75A,

Dynamic test circuit in Figure E)

Ets*

*) Eonand Etsinclude losses

due to diode recovery

5.0mJ

4.0mJ

E, SWITCHING ENERGY LOSSES

3.0mJ

2.0mJ

1.0mJ

0.0mJ

E

off

Eon*

25°C 50°C 75°C 100°C 125°C 150°C

TJ, JUNCTION TEMPERATURE VCE, COLLECTOR-EMITTER VOLTAGE

as a function of junction
temperature

(inductive load, VCE= 400V,
VGE= 0/15V, IC= 75A, r
Dynamic test circuit in Figure E)

= 5Ω,

G

Ets*

*) Eonand Etsinclude losses

due to diode recovery

8mJ

6mJ

Ets*

4mJ

2mJ

E, SWITCHING ENERGY LOSSES

0mJ

300V 350V 400V 450V 500V 550V

as a function of collector emitter
voltage

(inductive load, TJ= 175°C,
VGE= 0/15V, IC= 75A, r

Dynamic test circuit in Figure E)

= 5Ω,

G

Eon*

E

off

IFAG IPC TD VLS

7 Rev. 2.8 2013-12-05

IKW75N60T

Figure

17.Typical gate charge

Figure

18.Typical capacitance as a function

C(sc)

Figure

19.Typical short circuit collector

Figure

20.Short circuit withstand time as a

TRENCHSTOP™ Series q

C

iss

15V

1nF

120V

10V

, GATE-EMITTER VOLTAGE

GE

5V

V

480V

c, CAPACITANCE

100pF

C

oss

C

rss

0V

0nC 100nC 200nC 300nC 400nC

QGE, GATE CHARGE VCE, COLLECTOR-EMITTER VOLTAGE

(IC=75 A)

1000

750

500

0V 10V 20V

of collector-emitter voltage

(VGE=0V, f = 1 MHz)

8µs

6µs

4µs

250

, short circuit COLLECTOR CURRENT

I

0

12 13 14 15 16 17 18 19 20

VGE, GATE-EMITTER VOLTAGE VGE, GATE- EMITTERVOLTAGE

current as a function of gate­emitter voltage

(VCE 400V, Tj 150C)

IFAG IPC TD VLS

2µs

, SHORT CIRCUIT WITHSTAND TIME

SC

t

0µs

10V 11V 12V 13V 14V

function of gate-emitter voltage

(VCE=400V, start at TJ=25°C,
T

<150°C)

Jmax

8 Rev. 2.8 2013-12-05

IKW75N60T

1µs

10µs

100µs

1ms

10ms

100ms

100ns

1µs

10µs

100µs

1ms

10ms

100ms

Figure

21.IGBT transient thermal

Figure

22.Diode transient thermal

Figure

23.Typical reverse recovery time as

Figure

24.Typical reverse recovery charge







0.0290

0.000119

C1=



1

/

R

1

C2=



2

/

R

2







0.04

0.000008

C1=



1

/

R

1

C2=



2

/

R

2

TRENCHSTOP™ Series q

10-1K/W

10-2K/W

, TRANSIENT THERMAL IMPEDANCE

thJC

Z

10-3K/W

D=0.5

0.2

0.1

0.05

single pulse

tP, PULSE WIDTH tP, PULSE WIDTH

impedance

(D = tp/ T)

R,(K/W )

0.1968 0.115504

0.0733 0.009340

0.0509 0.000823

0.02

R

1

0.01

, (s )

D=0.5

0.2

-1

K/W

0.1

R,(K/W )

0.05

0.02

R

2

-2

K/W

0.01

0.1846 0.110373

0.1681 0.015543

0.1261 0.001239

0.0818 0.000120

R

1

, (s )

R

2

, TRANSIENT THERMAL IMPEDANCE

thJC

Z

single pulse

impedance as a function of pulse
width

(D=tP/T)

, REVERSE RECOVERY TIME

rr

t

200ns

150ns

100ns

50ns

0ns

1000A/µs 1500A/µs

diF/dt, DIODE CURRENTSLOPE diF/dt, DIODE CURRENTSLOPE

a function of diode current slope

(VR=400V, IF=75A,
Dynamic test circuit in Figure E)

TJ=175°C

TJ=25°C

5µC

TJ=175°C

4µC

3µC

2µC

TJ=25°C

, REVERSE RECOVERY CHARGE

rr

1µC

Q

0µC

1000A/µs 1500A/µs

as a function of diode current
slope

(VR= 400V, IF=75A,
Dynamic test circuit in Figure E)

IFAG IPC TD VLS

9 Rev. 2.8 2013-12-05

IKW75N60T

di

/dt

,

OF REVERSE RECOVERY

CURRENT

Figure

25.Typical reverse recovery current

Figure

26.Typical diode peak rate of fall of

100A

150A

200A

Figure

27.Typical diode forward current as

Figure

28.Typical diode forward voltage

as a

TRENCHSTOP™ Series q

60A

50A

40A

30A

20A

, REVERSE RECOVERY CURRENT

rr

10A

I

0A

1000A/µs 1500A/µs

diF/dt, DIODE CURRENTSLOPE diF/dt, DIODE CURRENTSLOPE

as a function of diode current
slope

(VR= 400V, IF= 75A,
Dynamic test circuit in Figure E)

TJ=175°C

TJ=25°C

DIODE PEAK RATE OF FALL

rr

-800A/µs

-600A/µs

-400A/µs

-200A/µs

0A/µs

TJ=175°C

TJ=25°C

1000A/µs 1500A/µs

reverse recovery current as a
function of diode current slope

(VR=400V, IF=75A,
Dynamic test circuit in Figure E)

TJ=25°C

175°C

, FORWARD CURRENT

F

I

50A

0A

0V 1V 2V

2.0V

1.5V

1.0V

, FORWARD VOLTAGE

F

V

0.5V

0.0V
0°C 50°C 100°C 150°C

IF=150A

75A

37.5A

VF, FORWARD VOLTAGE TJ, JUNCTION TEMPERATURE

a function of forward voltage

function of junction temperature

IFAG IPC TD VLS

10 Rev. 2.8 2013-12-05

IKW75N60T

TRENCHSTOP™ Series q

IFAG IPC TD VLS

11 Rev. 2.8 2013-12-05

IKW75N60T

I

rrm

90%

10%

di /dt

i,v

di /dt

12n

T(t

)

j1



22n

n



T

C

Figure A. Definition of switching times

TRENCHSTOP™ Series q

t =t t

+

F

I

F

r r S F

Q =Q Q

r r S F

t

r r

t

S

+

t

F

Q

S

Figure C. Definition of diodes
switching characteristics

r r

1

p(t)

r

Figure D. Thermal equivalent
circuit

t

Q

F

I

r r m

V

r r

I

r r m

R

r

rr

Figure B. Definition of switching losses

IFAG IPC TD VLS

12 Rev. 2.8 2013-12-05

IKW75N60T

TRENCHSTOP™ Series q

Published by
Infineon Technologies AG
81726 Munich, Germany
© 2013 Infineon Technologies AG
All Rights Reserved.

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The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or
any information regarding the application of the device, Infineon Technologies hereby disclaims any and all
warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual
property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements, components may contain dangerous substances. For information on the
types in question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or
systems and/or automotive, aviation and aerospace applications or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the
failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted in the
human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable
to assume that the health of the user or other persons may be endangered.

IFAG IPC TD VLS

13 Rev. 2.8 2013-12-05