Page 1
IFAG IPC TD VLS
1
Rev. 2.8 18.05.2015
Features:
Very low V
CE(sat)
1.5V (typ.)
Maximum Junction Temperature 175°C
Short circuit withstand time 5s
Designed for :
- Frequency Converters
- Uninterrupted Power Supply
TRENCHSTOP™ and Fieldstop technology for 600V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
- low V
CE(sat)
Positive temperature coefficient in V
CE(sat)
Low EMI
Low Gate Charge
Very soft, fast recovery anti-parallel Emitter Controlled HE diode
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Type
VCE
IC
V
CE(sat),Tj=25°C
T
j,max
Marking
Package
IKW20N60T
600V
20A
1.5V
175C
K20T60
PG-TO247-3
Parameter
Symbol
Value
Unit
Collector-emitter voltage, T
j
≥ 25C
VCE
600
V
DC collector current, limited by T
jmax
TC = 25C
TC = 100C
IC
41
28
A
Pulsed collector current, tp limited by T
jmax
I
Cpu ls
60
Turn off safe operating area, V
CE
= 600V, Tj = 175C, tp = 1µs
-
60
Diode forward current, limited by T
jmax TC
= 25C
TC = 100C
IF
41
28
Diode pulsed current, tp limited by T
jmax
I
Fpu ls
60
Gate-emitter voltage
VGE
20
V
Short circuit withstand time2)
VGE = 15V, V
CC
400V, Tj 150C
tSC
5
s
Power dissipation TC = 25C
P
tot
166
W
Operating junction temperature
Tj
-40...+175
C
Storage temperature
T
stg
-55...+150
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
-
260
1
2
G
C
E
PG-TO247-3
IKW20N60T
TRENCHSTOP™ Series
Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft,
fast recovery anti-parallel Emitter Controlled HE diode
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Maximum Ratings
J-STD-020 and JESD-022
)
Allowed number of short circuits: <1000; time between short circuits: >1s.
Page 2
IFAG IPC TD VLS
2
Rev. 2.8 18.05.2015
Parameter
Symbol
Conditions
Max. Value
Unit
IGBT thermal resistance,
junction – case
R
thJ C
0.9
K/W
Diode thermal resistance,
junction – case
R
thJ CD
1.5
Thermal resistance,
junction – ambient
R
thJ A
40
Parameter
Symbol
Conditions
Value
Unit
min.
Typ.
max.
Collector-emitter breakdown voltage
V
(BR )C ES
VGE=0V, IC=0.2mA
600 - -
V
Collector-emitter saturation voltage
V
CE( sa t)
VGE = 15V, IC=20A
Tj=25C
Tj=175C
-
-
1.5
1.9
2.05
-
Diode forward voltage
VF
VGE=0V, IF=20A
Tj=25C
Tj=175C
-
-
1.65
1.6
2.05
-
Gate-emitter threshold voltage
V
GE( th )
IC=290µA,VCE=VGE
4.1
4.9
5.7
Zero gate voltage collector current
I
CES
VCE=600V,
VGE=0V
Tj=25C
Tj=175C
-
-
-
-
40
1500
µA
Gate-emitter leakage current
I
GES
VCE=0V,VGE=20V
- - 100
nA
Transconductance
gfs
VCE=20V, IC=20A
-
11
-
S
Integrated gate resistor
R
Gin t
-
Ω
Input capacitance
C
iss
VCE=25V,
VGE=0V,
f=1MHz
-
1100
-
pF
Output capacitance
C
oss
-
71
-
Reverse transfer capacitance
C
rss
-
32
-
Gate charge
Q
Gat e
VCC=480V, IC=20A
VGE=15V
-
120
-
nC
Internal emitter inductance
measured 5mm (0.197 in.) from case
LE
PG-TO247-3
-
13
-
nH
Short circuit collector current1)
I
C(S C)
VGE=15V,tSC5s
V
CC
= 400V,
Tj 150 C
-
183.3
-
A
1
IKW20N60T
TRENCHSTOP™ Series
Thermal Resistance
Characteristic
Electrical Characteristic, at Tj = 25 C, unless otherwise specified
Static Characteristic
Dynamic Characteristic
)
Allowed number of short circuits: <1000; time between short circuits: >1s.
Page 3
IFAG IPC TD VLS
3
Rev. 2.8 18.05.2015
Parameter
Symbol
Conditions
Value
Unit
min.
Typ.
max.
Turn-on delay time
t
d(o n)
Tj=25 C,
VCC=400V,IC=20A,
VGE=0/15V,rG=12 ,
L=131nH,C=31pF
L, C from Fig. E
Energy losses include
“tail” and diode reverse
recovery.
-
18
-
ns
Rise time
tr
-
14
-
Turn-off delay time
t
d(o ff )
-
199
-
Fall time
tf
-
42
-
Turn-on energy
Eon
-
0.31
-
mJ
Turn-off energy
E
off
-
0.46
-
Total switching energy
Ets
-
0.77
-
Diode reverse recovery time
trr
Tj=25C,
VR=400V, IF=20A,
diF/dt=880A/ s
-
41
-
ns
Diode reverse recovery charge
Qrr
-
0.31
-
µC
Diode peak reverse recovery current
I
rrm
-
13.3
-
A
Diode peak rate of fall of reverse
recovery current during tb
dirr/dt
-
711
-
A/s
Parameter
Symbol
Conditions
Value
Unit
min.
Typ.
max.
Turn-on delay time
t
d(o n)
Tj=175 C,
VCC=400V,IC=20A,
VGE=0/15V,rG=12 ,
L=131nH,C=31pF
L, C from Fig. E
Energy losses include
“tail” and diode reverse
recovery.
-
18
-
ns
Rise time
tr
-
18
-
Turn-off delay time
t
d(o ff )
-
223
-
Fall time
tf
-
76
-
Turn-on energy
Eon
-
0.51
-
mJ
Turn-off energy
E
off
-
0.64
-
Total switching energy
Ets
-
1.15
-
Diode reverse recovery time
trr
Tj=175C
VR=400V, IF=20A,
diF/dt=880A/ s
-
176
-
ns
Diode reverse recovery charge
Qrr
-
1.46
-
µC
Diode peak reverse recovery current
I
rrm
-
18.9
-
A
Diode peak rate of fall of reverse
recovery current during tb
dirr/dt
-
467
-
A/s
IKW20N60T
TRENCHSTOP™ Series
Switching Characteristic, Inductive Load, at Tj=25 C
IGBT Characteristic
Anti-Parallel Diode Characteristic
Switching Characteristic, Inductive Load, at Tj=175 C
IGBT Characteristic
Anti-Parallel Diode Characteristic
Page 4
IFAG IPC TD VLS
4
Rev. 2.8 18.05.2015
I
C
, COLLECTOR CURRENT
10Hz 100Hz 1kHz 10kHz 100kHz
0A
10A
20A
30A
40A
50A
60A
TC=110°C
TC=80°C
I
C
, COLLECTOR CURRENT
1V 10V 100V 1000V
0.1A
1A
10A
10µs
1ms
DC
tp=2µs
50µs
10ms
f, SWITCHING FREQUENCY
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 1. Collector current as a function of
switching frequency
(Tj 175C, D = 0.5, VCE = 400V,
VGE = 0/15V, rG = 12)
Figure 2. Safe operating area
(D = 0, TC = 25C, Tj 175C;
VGE=0/15V)
P
tot
, POWER DISSIPATION
25°C 50°C 75°C 100°C 125°C 150°C
0W
20W
40W
60W
80W
100W
120W
140W
160W
I
C
, COLLECTOR CURRENT
25°C 50°C 75°C 100°C 125°C 150°C
0A
10A
20A
30A
40A
TC, CASE TEMPERATURE
TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function
of case temperature
(Tj 175C)
Figure 4. Collector current as a function of
case temperature
(VGE 15V, Tj 175C)
I
c
I
c
IKW20N60T
TRENCHSTOP™ Series
Page 5
IFAG IPC TD VLS
5
Rev. 2.8 18.05.2015
I
C
, COLLECTOR CURRENT
0V 1V 2V 3V
0A
10A
20A
30A
40A
50A
15V
7V
9V
11V
13V
VGE=20V
I
C
, COLLECTOR CURRENT
0V 1V 2V 3V 4V
0A
10A
20A
30A
40A
50A
15V
13V
7V
9V
11V
VGE=20V
VCE, COLLECTOR-EMITTER VOLTAGE
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(Tj = 25°C)
Figure 6. Typical output characteristic
(Tj = 175°C)
I
C
, COLLECTOR CURRENT
0V 2V 4V 6V 8V
0A
5A
10A
15A
20A
25A
30A
35A
25°C
TJ=175°C
V
CE(sat),
COLLECTOR-EMITT SATURATION VOLTAGE
0°C 50°C 100°C 150°C
0.0V
0.5V
1.0V
1.5V
2.0V
2.5V
IC=20A
IC=40A
IC=10A
V
GE
, GATE-EMITTER VOLTAGE
TJ, JUNCTION TEMPERATURE
Figure 7. Typical transfer characteristic
(VCE=10V)
Figure 8. Typical collector-emitter
saturation voltage as a function
of junction temperature
(VGE = 15V)
IKW20N60T
TRENCHSTOP™ Series
Page 6
IFAG IPC TD VLS
6
Rev. 2.8 18.05.2015
t, SWITCHING TIMES
0A 5A 10A 15A 20A 25A 30A 35A
1ns
10ns
100ns
t
r
t
d(on)
t
f
t
d(off)
t, SWITCHING TIMES
10ns
100ns
t
r
t
d(on)
t
f
t
d(off)
IC, COLLECTOR CURRENT
RG, GATE RESISTOR
Figure 9. Typical switching times as a
function of collector current
(inductive load, TJ=175°C,
V
CE
= 400V, V
GE
= 0/15V, rG = 12Ω,
Dynamic test circuit in Figure E)
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, TJ = 175°C,
VCE= 400V, V
GE
= 0/15V, IC = 20A,
Dynamic test circuit in Figure E)
t, SWITCHING TIMES
25°C 50°C 75°C 100°C 125°C 150°C
10ns
100ns
t
r
t
d(on)
t
f
t
d(off)
V
GE(th),
GATE-EMITT TRSHOLD VOLTAGE
-50°C 0°C 50°C 100°C 150°C
0V
1V
2V
3V
4V
5V
6V
7V
min.
typ.
max.
TJ, JUNCTION TEMPERATURE
TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, V
CE
= 400V,
V
GE
= 0/15V, IC = 20A, rG=12Ω,
Dynamic test circuit in Figure E)
Figure 12. Gate-emitter threshold voltage as
a function of junction
temperature
(IC = 0.29mA)
IKW20N60T
TRENCHSTOP™ Series
Page 7
IFAG IPC TD VLS
7
Rev. 2.8 18.05.2015
E, SWITCHING ENERGY LOSSES
0A 5A 10A 15A 20A 25A 30A 35A
0.0mJ
0.4mJ
0.8mJ
1.2mJ
1.6mJ
2.0mJ
2.4mJ
Ets*
E
off
*) Eon and Ets include losses
due to diode recovery
Eon*
E, SWITCHING ENERGY LOSSES
0.0mJ
0.4mJ
0.8mJ
1.2mJ
1.6mJ
2.0mJ
2.4mJ
Ets*
E
off
*) Eon and Ets include losses
due to diode recovery
Eon*
IC, COLLECTOR CURRENT
RG, GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, TJ = 175°C,
V
CE
= 400V, V
GE
= 0/15V, rG = 12Ω,
Dynamic test circuit in Figure E)
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, TJ = 175°C,
V
CE
= 400V, V
GE
= 0/15V, IC = 20A,
Dynamic test circuit in Figure E)
E, SWITCHING ENERGY LOSSES
25°C 50°C 75°C 100°C 125°C 150°C
0.0mJ
0.2mJ
0.4mJ
0.6mJ
0.8mJ
1.0mJ
Ets*
E
off
*) Eon and Ets include losses
due to diode recovery
Eon*
E, SWITCHING ENERGY LOSSES
300V 350V 400V 450V 500V 550V
0.0mJ
0.2mJ
0.4mJ
0.6mJ
0.8mJ
1.0mJ
1.2mJ
1.4mJ
1.6mJ
1.8mJ
2.0mJ
Ets*
Eon*
*) Eon and Ets include losses
due to diode recovery
E
off
TJ, JUNCTION TEMPERATURE
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load, V
CE
= 400V,
V
GE
= 0/15V, IC = 20A, rG = 12Ω,
Dynamic test circuit in Figure E)
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
(inductive load, TJ = 175°C,
V
GE
= 0/15V, IC = 20A, rG = 12Ω,
Dynamic test circuit in Figure E)
IKW20N60T
TRENCHSTOP™ Series
Page 8
IFAG IPC TD VLS
8
Rev. 2.8 18.05.2015
V
GE
, GATE-EMITTER VOLTAGE
0nC 30nC 60nC 90nC 120nC
0V
5V
10V
15V
480V
120V
c, CAPACITANCE
0V 10V 20V 30V 40V
10pF
100pF
1nF
C
rss
C
oss
C
iss
QGE, GATE CHARGE
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 17. Typical gate charge
(IC=20 A)
Figure 18. Typical capacitance as a function
of collector-emitter voltage
(VGE=0V, f = 1 MHz)
I
C(sc)
, short circuit COLLECTOR CURRENT
12V 14V 16V 18V
0A
50A
100A
150A
200A
250A
300A
t
SC
, SHORT CIRCUIT WITHSTAND TIME
10V 11V 12V 13V 14V
0µs
2µs
4µs
6µs
8µs
10µs
12µs
VGE, GATE-EMITTETR VOLTAGE
VGE, GATE-EMITETR VOLTAGE
Figure 19. Typical short circuit collector
current as a function of gateemitter voltage
(VCE 400V, Tj 150C)
Figure 20. Short circuit withstand time as a
function of gate-emitter voltage
(VCE=400V, start at TJ=25°C,
T
Jmax
<150°C)
IKW20N60T
TRENCHSTOP™ Series
Page 9
IFAG IPC TD VLS
9
Rev. 2.8 18.05.2015
Z
thJC
, TRANSIENT THERMAL IMPEDANCE
1µs 10µs 100µs 1ms 10ms 100ms
10-2K/W
10-1K/W
single pulse
0.01
0.02
0.05
0.1
0.2
D=0.5
Z
thJC
, TRANSIENT THERMAL IMPEDANCE
1µs 10µs 100µs 1ms 10ms 100ms
10-2K/W
10-1K/W
100K/W
single pulse
0.01
0.02
0.05
0.1
0.2
D=0.5
tP, PULSE WIDTH
tP, PULSE WIDTH
Figure 21. IGBT transient thermal
impedance
(D = tp / T)
Figure 22. Diode transient thermal
impedance as a function of pulse
width
(D=tP/T)
t
rr
, REVERSE RECOVERY TIME
600A/µs 900A/µs 1200A/µs
0ns
50ns
100ns
150ns
200ns
250ns
TJ=25°C
TJ=175°C
Q
rr
, REVERSE RECOVERY CHARGE
600A/µs 900A/µs 1200A/µs
0.2µC
0.4µC
0.6µC
0.8µC
1.0µC
1.2µC
1.4µC
1.6µC
1.8µC
TJ=25°C
TJ=175°C
diF/dt, DIODE CURRENT SLOPE
diF/dt, DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery time as
a function of diode current slope
(VR=400V, IF=20A,
Dynamic test circuit in Figure E)
Figure 24. Typical reverse recovery charge
as a function of diode current
slope
(VR = 400V, IF = 20A,
Dynamic test circuit in Figure E)
R,(K/W )
, (s)
0.18715
6.925*10-2
0.31990
1.085*10
-2
0.30709
6.791*10-4
0.07041
9.59*10-5
C1=
1/R1
R1R
2
C2=
2/R2
R,(K/ W )
, (s)
0.13483
9.207*10-2
6.53*10-2
0.58146
1.821*10
-2
0.44456
1.47*10-3
0.33997
1.254*10-4
C1=
1/R1
R1R
2
C2=
2/R2
IKW20N60T
TRENCHSTOP™ Series
Page 10
IFAG IPC TD VLS
10
Rev. 2.8 18.05.2015
I
rr
, REVERSE RECOVERY CURRENT
600A/µs 900A/µs 1200A/µs
0A
4A
8A
12A
16A
20A
24A
TJ=25°C
TJ=175°C
di
rr
/dt, DIODE PEAK RATE OF FALL
OF REVERSE RECOVERY CURRENT
600A/µs 900A/µs 1200A/µs
0A/µs
-150A/µs
-300A/µs
-450A/µs
-600A/µs
-750A/µs
TJ=25°C
TJ=175°C
diF/dt, DIODE CURRENT SLOPE
diF/dt, DIODE CURRENT SLOPE
Figure 25. Typical reverse recovery current
as a function of diode current
slope
(VR = 400V, IF = 20A,
Dynamic test circuit in Figure E)
Figure 26. Typical diode peak rate of fall of
reverse recovery current as a
function of diode current slope
(VR=400V, IF=20A,
Dynamic test circuit in Figure E)
I
F
, FORWARD CURRENT
0V 1V 2V
0A
10A
20A
30A
40A
50A
175°C
TJ=25°C
V
F
, FORWARD VOLTAGE
0°C 50°C 100°C 150°C
0.0V
0.5V
1.0V
1.5V
2.0V
20A
IF=40A
10A
VF, FORWARD VOLTAGE
TJ, JUNCTION TEMPERATURE
Figure 27. Typical diode forward current as
a function of forward voltage
Figure 28. Typical diode forward voltage as a
function of junction temperature
IKW20N60T
TRENCHSTOP™ Series
Page 11
IFAG IPC TD VLS
11
Rev. 2.8 18.05.2015
IKW20N60T
TRENCHSTOP™ Series
Page 12
IFAG IPC TD VLS
12
Rev. 2.8 18.05.2015
I
r r m
90% I
r r m
10% I
r r m
di /dt
F
t
r r
I
F
i,v
t
Q
S
Q
F
t
S
t
F
V
R
di /dt
r r
Q =Q Q
r r S F
+
t =t t
r r S F
+
Figure C. Definition of diodes
switching characteristics
p(t)
1 2 n
T (t)
j
1
1
2
2
n
n
T
C
r r
r
r
rr
Figure D. Thermal equivalent
circuit
Figure A. Definition of switching times
Figure B. Definition of switching losses
IKW20N60T
TRENCHSTOP™ Series
Page 13
IFAG IPC TD VLS
13
Rev. 2.8 18.05.2015
IKW20N60T
TRENCHSTOP™ Series
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2015 Infineon Technologies AG
All Rights Reserved.
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characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or
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For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
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