Datasheet IKW20N60T Specification

IFAG IPC TD VLS

1

Rev. 2.8 18.05.2015

Features:

 Very low V

CE(sat)

1.5V (typ.)

 Maximum Junction Temperature 175°C  Short circuit withstand time 5s  Designed for :

- Frequency Converters

- Uninterrupted Power Supply

 TRENCHSTOP™ and Fieldstop technology for 600V applications offers :

- very tight parameter distribution

- high ruggedness, temperature stable behavior

- very high switching speed

- low V

CE(sat)

 Positive temperature coefficient in V

CE(sat)

 Low EMI  Low Gate Charge  Very soft, fast recovery anti-parallel Emitter Controlled HE diode  Qualified according to JEDEC1 for target applications  Pb-free lead plating; RoHS compliant

Type

VCE

IC

V

CE(sat),Tj=25°C

T

j,max

Marking

Package

IKW20N60T

600V

20A

1.5V

175C

K20T60

PG-TO247-3

Parameter

Symbol

Value

Unit

Collector-emitter voltage, T

j

≥ 25C

VCE

600

V

DC collector current, limited by T

jmax

TC = 25C

TC = 100C

IC

41 28

A

Pulsed collector current, tp limited by T

jmax

I

Cpu ls

60

Turn off safe operating area, V

CE

= 600V, Tj = 175C, tp = 1µs

-

60

Diode forward current, limited by T

jmax TC

= 25C

TC = 100C

IF

41 28

Diode pulsed current, tp limited by T

jmax

I

Fpu ls

60

Gate-emitter voltage

VGE

20

V

Short circuit withstand time2)

VGE = 15V, V

CC

 400V, Tj  150C

tSC

5

s Power dissipation TC = 25C

P

tot

166

W

Operating junction temperature

Tj

-40...+175

C Storage temperature

T

stg

-55...+150

Soldering temperature, 1.6mm (0.063 in.) from case for 10s

-

260

1 2

G

C

E

PG-TO247-3

IKW20N60T

TRENCHSTOP™ Series

Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

 Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Maximum Ratings

J-STD-020 and JESD-022

)

Allowed number of short circuits: <1000; time between short circuits: >1s.

IFAG IPC TD VLS

2

Rev. 2.8 18.05.2015

Parameter

Symbol

Conditions

Max. Value

Unit

IGBT thermal resistance, junction – case

R

thJ C

0.9

K/W

Diode thermal resistance, junction – case

R

thJ CD

1.5

Thermal resistance, junction – ambient

R

thJ A

40

Parameter

Symbol

Conditions

Value

Unit

min.

Typ.

max.

Collector-emitter breakdown voltage

V

(BR )C ES

VGE=0V, IC=0.2mA

600 - -

V

Collector-emitter saturation voltage

V

CE( sa t)

VGE = 15V, IC=20A Tj=25C Tj=175C

-

1.5

1.9

2.05

-

Diode forward voltage

VF

VGE=0V, IF=20A Tj=25C Tj=175C

-

1.65

1.6

2.05

-

Gate-emitter threshold voltage

V

GE( th )

IC=290µA,VCE=VGE

4.1

4.9

5.7

Zero gate voltage collector current

I

CES

VCE=600V, VGE=0V

Tj=25C Tj=175C

-

40

1500

µA

Gate-emitter leakage current

I

GES

VCE=0V,VGE=20V

- - 100

nA

Transconductance

gfs

VCE=20V, IC=20A

-

11

-

S

Integrated gate resistor

R

Gin t

-

Ω

Input capacitance

C

iss

VCE=25V, VGE=0V, f=1MHz

-

1100

-

pF

Output capacitance

C

oss

-

71

-

Reverse transfer capacitance

C

rss

-

32

-

Gate charge

Q

Gat e

VCC=480V, IC=20A VGE=15V

-

120

-

nC

Internal emitter inductance measured 5mm (0.197 in.) from case

LE

PG-TO247-3

-

13

-

nH

Short circuit collector current1)

I

C(S C)

VGE=15V,tSC5s V

CC

= 400V,

Tj  150 C

-

183.3

-

A

1

IKW20N60T

TRENCHSTOP™ Series

Thermal Resistance

Characteristic

Electrical Characteristic, at Tj = 25 C, unless otherwise specified

Static Characteristic

Dynamic Characteristic

)

Allowed number of short circuits: <1000; time between short circuits: >1s.

IFAG IPC TD VLS

3

Rev. 2.8 18.05.2015

Parameter

Symbol

Conditions

Value

Unit

min.

Typ.

max.

Turn-on delay time

t

d(o n)

Tj=25 C, VCC=400V,IC=20A, VGE=0/15V,rG=12 , L=131nH,C=31pF

L, C from Fig. E

Energy losses include

“tail” and diode reverse

recovery.

-

18

-

ns

Rise time

tr

-

14

-

Turn-off delay time

t

d(o ff )

-

199

-

Fall time

tf

-

42

-

Turn-on energy

Eon

-

0.31

-

mJ

Turn-off energy

E

off

-

0.46

-

Total switching energy

Ets

-

0.77

-

Diode reverse recovery time

trr

Tj=25C, VR=400V, IF=20A, diF/dt=880A/ s

-

41

-

ns

Diode reverse recovery charge

Qrr

-

0.31

-

µC

Diode peak reverse recovery current

I

rrm

-

13.3

-

A

Diode peak rate of fall of reverse recovery current during tb

dirr/dt

-

711

-

A/s

Parameter

Symbol

Conditions

Value

Unit

min.

Typ.

max.

Turn-on delay time

t

d(o n)

Tj=175 C, VCC=400V,IC=20A, VGE=0/15V,rG=12 , L=131nH,C=31pF

L, C from Fig. E

Energy losses include

“tail” and diode reverse

recovery.

-

18

-

ns

Rise time

tr

-

18

-

Turn-off delay time

t

d(o ff )

-

223

-

Fall time

tf

-

76

-

Turn-on energy

Eon

-

0.51

-

mJ

Turn-off energy

E

off

-

0.64

-

Total switching energy

Ets

-

1.15

-

Diode reverse recovery time

trr

Tj=175C VR=400V, IF=20A, diF/dt=880A/ s

-

176

-

ns

Diode reverse recovery charge

Qrr

-

1.46

-

µC

Diode peak reverse recovery current

I

rrm

-

18.9

-

A

Diode peak rate of fall of reverse recovery current during tb

dirr/dt

-

467

-

A/s

IKW20N60T

TRENCHSTOP™ Series

Switching Characteristic, Inductive Load, at Tj=25 C

IGBT Characteristic

Anti-Parallel Diode Characteristic

Switching Characteristic, Inductive Load, at Tj=175 C

IGBT Characteristic

Anti-Parallel Diode Characteristic

IFAG IPC TD VLS

4

Rev. 2.8 18.05.2015

I

C

, COLLECTOR CURRENT

10Hz 100Hz 1kHz 10kHz 100kHz

0A

10A

20A

30A

40A

50A

60A

TC=110°C

TC=80°C

I

C

, COLLECTOR CURRENT

1V 10V 100V 1000V

0.1A

1A

10A

10µs

1ms

DC

tp=2µs

50µs

10ms

f, SWITCHING FREQUENCY

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 1. Collector current as a function of

switching frequency

(Tj  175C, D = 0.5, VCE = 400V, VGE = 0/15V, rG = 12)

Figure 2. Safe operating area

(D = 0, TC = 25C, Tj 175C; VGE=0/15V)

P

tot

, POWER DISSIPATION

25°C 50°C 75°C 100°C 125°C 150°C

0W

20W

40W

60W

80W

100W

120W

140W

160W

I

C

, COLLECTOR CURRENT

25°C 50°C 75°C 100°C 125°C 150°C

0A

10A

20A

30A

40A

TC, CASE TEMPERATURE

Figure 3. Power dissipation as a function

of case temperature (Tj  175C)

Figure 4. Collector current as a function of

case temperature

(VGE  15V, Tj  175C)

I

c

I

c

IKW20N60T

TRENCHSTOP™ Series

IFAG IPC TD VLS

5

Rev. 2.8 18.05.2015

I

C

, COLLECTOR CURRENT

0V 1V 2V 3V

0A

10A

20A

30A

40A

50A

15V

7V

9V

11V

13V

VGE=20V

I

C

, COLLECTOR CURRENT

0V 1V 2V 3V 4V

0A

10A

20A

30A

40A

50A

15V 13V

7V

9V

11V

VGE=20V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 5. Typical output characteristic

(Tj = 25°C)

Figure 6. Typical output characteristic

(Tj = 175°C)

I

C

, COLLECTOR CURRENT

0V 2V 4V 6V 8V

0A

5A

10A

15A

20A

25A

30A

35A

25°C

TJ=175°C

V

CE(sat),

COLLECTOR-EMITT SATURATION VOLTAGE

0°C 50°C 100°C 150°C

0.0V

0.5V

1.0V

1.5V

2.0V

2.5V

IC=20A

IC=40A

IC=10A

V

GE

, GATE-EMITTER VOLTAGE

TJ, JUNCTION TEMPERATURE

Figure 7. Typical transfer characteristic

(VCE=10V)

Figure 8. Typical collector-emitter

saturation voltage as a function of junction temperature

(VGE = 15V)

IKW20N60T

TRENCHSTOP™ Series

IFAG IPC TD VLS

6

Rev. 2.8 18.05.2015

t, SWITCHING TIMES

0A 5A 10A 15A 20A 25A 30A 35A

1ns

10ns

100ns

t

r

t

d(on)

t

f

t

d(off)

t, SWITCHING TIMES

      

10ns

100ns

t

r

t

d(on)

t

f

t

d(off)

IC, COLLECTOR CURRENT

RG, GATE RESISTOR

Figure 9. Typical switching times as a

function of collector current

(inductive load, TJ=175°C, V

CE

= 400V, V

GE

= 0/15V, rG = 12Ω,

Dynamic test circuit in Figure E)

Figure 10. Typical switching times as a

function of gate resistor

(inductive load, TJ = 175°C, VCE= 400V, V

GE

= 0/15V, IC = 20A,

Dynamic test circuit in Figure E)

t, SWITCHING TIMES

25°C 50°C 75°C 100°C 125°C 150°C

10ns

100ns

t

r

t

d(on)

t

f

t

d(off)

V

GE(th),

GATE-EMITT TRSHOLD VOLTAGE

-50°C 0°C 50°C 100°C 150°C

0V

1V

2V

3V

4V

5V

6V

7V

min.

typ.

max.

TJ, JUNCTION TEMPERATURE

Figure 11. Typical switching times as a

function of junction temperature

(inductive load, V

CE

= 400V,

V

GE

= 0/15V, IC = 20A, rG=12Ω,

Dynamic test circuit in Figure E)

Figure 12. Gate-emitter threshold voltage as

a function of junction temperature

(IC = 0.29mA)

IKW20N60T

TRENCHSTOP™ Series

IFAG IPC TD VLS

7

Rev. 2.8 18.05.2015

E, SWITCHING ENERGY LOSSES

0A 5A 10A 15A 20A 25A 30A 35A

0.0mJ

0.4mJ

0.8mJ

1.2mJ

1.6mJ

2.0mJ

2.4mJ

Ets*

E

off

*) Eon and Ets include losses due to diode recovery

Eon*

E, SWITCHING ENERGY LOSSES

    

0.0mJ

0.4mJ

0.8mJ

1.2mJ

1.6mJ

2.0mJ

2.4mJ

Ets*

E

off

*) Eon and Ets include losses due to diode recovery

Eon*

IC, COLLECTOR CURRENT

RG, GATE RESISTOR

Figure 13. Typical switching energy losses

as a function of collector current

(inductive load, TJ = 175°C, V

CE

= 400V, V

GE

= 0/15V, rG = 12Ω,

Dynamic test circuit in Figure E)

Figure 14. Typical switching energy losses

as a function of gate resistor

(inductive load, TJ = 175°C, V

CE

= 400V, V

GE

= 0/15V, IC = 20A,

Dynamic test circuit in Figure E)

E, SWITCHING ENERGY LOSSES

25°C 50°C 75°C 100°C 125°C 150°C

0.0mJ

0.2mJ

0.4mJ

0.6mJ

0.8mJ

1.0mJ

Ets*

E

off

*) Eon and Ets include losses due to diode recovery

Eon*

E, SWITCHING ENERGY LOSSES

300V 350V 400V 450V 500V 550V

0.0mJ

0.2mJ

0.4mJ

0.6mJ

0.8mJ

1.0mJ

1.2mJ

1.4mJ

1.6mJ

1.8mJ

2.0mJ

Ets*

Eon*

*) Eon and Ets include losses due to diode recovery

E

off

TJ, JUNCTION TEMPERATURE

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 15. Typical switching energy losses

as a function of junction temperature

(inductive load, V

CE

= 400V,

V

GE

= 0/15V, IC = 20A, rG = 12Ω,

Dynamic test circuit in Figure E)

Figure 16. Typical switching energy losses

as a function of collector emitter voltage

(inductive load, TJ = 175°C, V

GE

= 0/15V, IC = 20A, rG = 12Ω,

Dynamic test circuit in Figure E)

IKW20N60T

TRENCHSTOP™ Series

IFAG IPC TD VLS

8

Rev. 2.8 18.05.2015

V

GE

, GATE-EMITTER VOLTAGE

0nC 30nC 60nC 90nC 120nC

0V

5V

10V

15V

480V

120V

c, CAPACITANCE

0V 10V 20V 30V 40V

10pF

100pF

1nF

C

rss

C

oss

C

iss

QGE, GATE CHARGE

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 17. Typical gate charge

(IC=20 A)

Figure 18. Typical capacitance as a function

of collector-emitter voltage

(VGE=0V, f = 1 MHz)

I

C(sc)

, short circuit COLLECTOR CURRENT

12V 14V 16V 18V

0A

50A

100A

150A

200A

250A

300A

t

SC

, SHORT CIRCUIT WITHSTAND TIME

10V 11V 12V 13V 14V

0µs

2µs

4µs

6µs

8µs

10µs

12µs

VGE, GATE-EMITTETR VOLTAGE

VGE, GATE-EMITETR VOLTAGE

Figure 19. Typical short circuit collector

current as a function of gateemitter voltage

(VCE  400V, Tj  150C)

Figure 20. Short circuit withstand time as a

function of gate-emitter voltage

(VCE=400V, start at TJ=25°C, T

Jmax

<150°C)

IKW20N60T

TRENCHSTOP™ Series

IFAG IPC TD VLS

9

Rev. 2.8 18.05.2015

Z

thJC

, TRANSIENT THERMAL IMPEDANCE

1µs 10µs 100µs 1ms 10ms 100ms

10-2K/W

10-1K/W

single pulse

0.01

0.02

0.05

0.1

0.2

D=0.5

Z

thJC

, TRANSIENT THERMAL IMPEDANCE

1µs 10µs 100µs 1ms 10ms 100ms

10-2K/W

10-1K/W

100K/W

single pulse

0.01

0.02

0.05

0.1

0.2

D=0.5

tP, PULSE WIDTH

Figure 21. IGBT transient thermal

impedance

(D = tp / T)

Figure 22. Diode transient thermal

impedance as a function of pulse width

(D=tP/T)

t

rr

, REVERSE RECOVERY TIME

600A/µs 900A/µs 1200A/µs

0ns

50ns

100ns

150ns

200ns

250ns

TJ=25°C

TJ=175°C

Q

rr

, REVERSE RECOVERY CHARGE

600A/µs 900A/µs 1200A/µs

0.2µC

0.4µC

0.6µC

0.8µC

1.0µC

1.2µC

1.4µC

1.6µC

1.8µC

TJ=25°C

TJ=175°C

diF/dt, DIODE CURRENT SLOPE

Figure 23. Typical reverse recovery time as

a function of diode current slope

(VR=400V, IF=20A, Dynamic test circuit in Figure E)

Figure 24. Typical reverse recovery charge

as a function of diode current slope

(VR = 400V, IF = 20A, Dynamic test circuit in Figure E)

R,(K/W )



, (s)



0.18715

6.925*10-2

0.31990

1.085*10

-2

0.30709

6.791*10-4

0.07041

9.59*10-5

C1=



1/R1

R1R

2

C2=



2/R2

R,(K/ W )



, (s)



0.13483

9.207*10-2

6.53*10-2

0.58146

1.821*10

-2

0.44456

1.47*10-3

0.33997

1.254*10-4

C1=



1/R1

R1R

2

C2=



2/R2

IKW20N60T

TRENCHSTOP™ Series

IFAG IPC TD VLS

10

Rev. 2.8 18.05.2015

I

rr

, REVERSE RECOVERY CURRENT

600A/µs 900A/µs 1200A/µs

0A

4A

8A

12A

16A

20A

24A

TJ=25°C

TJ=175°C

di

rr

/dt, DIODE PEAK RATE OF FALL

OF REVERSE RECOVERY CURRENT

600A/µs 900A/µs 1200A/µs

0A/µs

-150A/µs

-300A/µs

-450A/µs

-600A/µs

-750A/µs

TJ=25°C

TJ=175°C

diF/dt, DIODE CURRENT SLOPE

Figure 25. Typical reverse recovery current

as a function of diode current slope

(VR = 400V, IF = 20A, Dynamic test circuit in Figure E)

Figure 26. Typical diode peak rate of fall of

reverse recovery current as a function of diode current slope

(VR=400V, IF=20A, Dynamic test circuit in Figure E)

I

F

, FORWARD CURRENT

0V 1V 2V

0A

10A

20A

30A

40A

50A

175°C

TJ=25°C

V

F

, FORWARD VOLTAGE

0°C 50°C 100°C 150°C

0.0V

0.5V

1.0V

1.5V

2.0V

20A

IF=40A

10A

VF, FORWARD VOLTAGE

TJ, JUNCTION TEMPERATURE

Figure 27. Typical diode forward current as

a function of forward voltage

Figure 28. Typical diode forward voltage as a

function of junction temperature

IKW20N60T

TRENCHSTOP™ Series

IFAG IPC TD VLS

11

Rev. 2.8 18.05.2015

IKW20N60T

TRENCHSTOP™ Series

IFAG IPC TD VLS

12

Rev. 2.8 18.05.2015

I

r r m

90% I

r r m

10% I

r r m

di /dt

F

t

r r

I

F

i,v

t

Q

S

Q

F

t

S

t

F

V

R

di /dt

r r

Q =Q Q

r r S F

+

t =t t

r r S F

+

Figure C. Definition of diodes switching characteristics

p(t)

1 2 n

T (t)

j



1



2 2

n



T

C

r r

r

rr

Figure D. Thermal equivalent circuit

Figure A. Definition of switching times

Figure B. Definition of switching losses

IKW20N60T

TRENCHSTOP™ Series

IFAG IPC TD VLS

13

Rev. 2.8 18.05.2015

IKW20N60T

TRENCHSTOP™ Series

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