Datasheet IKW15N120T2FKSA1 Specification

IFAG IPC TD VLS

1

Rev. 2.2 12.06.2013

 Short circuit withstand time – 10s  Designed for :

- Frequency Converters

- Uninterrupted Power Supply

 TrenchStop® 2nd generation for 1200 V applications offers :

- very tight parameter distribution

- high ruggedness, temperature stable behavior

 Easy paralleling capability due to positive temperature coefficient

in V

CE(sat)

 Low EMI  Low Gate Charge  Very soft, fast recovery anti-parallel Emitter Controlled HE Diode  Qualified according to JEDEC1 for target applications  Pb-free lead plating; RoHS compliant

Type

VCE

IC

V

CE(sat),Tj=25°C

T

j,max

Marking Code

Package

IKW15N120T2

1200V

15A

1.75V

175C

K15T1202

PG-TO-247-3

Parameter

Symbol

Value

Unit

Collector-emitter voltage

VCE

1200

V

DC collector current (Tj = 150°C)

TC = 25C TC = 110C

IC

30 15

A

Pulsed collector current, tp limited by T

jmax

I

Cpu ls

60

Turn off safe operating area

V

CE

 1200V, Tj  175C

-

60

Diode forward current (Tj = 150°C)

TC = 25C TC = 110C

IF

25 15

Diode pulsed current, tp limited by T

jmax

I

Fpu ls

60

Gate-emitter voltage

VGE

20

V

Short circuit withstand time2)

VGE = 15V, V

CC

 600V, T

j, start

 175C

tSC

10

s

Power dissipation

TC = 25C

P

tot

235

W Operating junction temperature

Tj

-40...+175

C

Storage temperature

T

stg

-55...+150

Soldering temperature, 1.6mm (0.063 in.) from case for 10s Wavesoldering only, temperature on leads only

-

260

1

2

PG-TO-247-3

G

C

E

IKW15N120T2

TrenchStop

® 2nd

generation Series

Low Loss DuoPack : IGBT in 2

nd

generation TrenchStop® technology

with soft, fast recovery anti-parallel Emitter Controlled Diode

 Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Maximum Ratings

J-STD-020 and JESD-022

)

Allowed number of short circuits: <1000; time between short circuits: >1s.

IFAG IPC TD VLS

2

Rev. 2.2 12.06.2013

Parameter

Symbol

Conditions

Max. Value

Unit

IGBT thermal resistance, junction – case

R

thJ C

0.63

K/W

Diode thermal resistance, junction – case

R

thJ CD

1.12

Thermal resistance, junction – ambient

R

thJ A

40

Parameter

Symbol

Conditions

Value

Unit

min.

typ.

max.

Collector-emitter breakdown voltage

V

(BR )C ES

VGE=0V, IC=500µA

1200 - -

V

Collector-emitter saturation voltage

V

CE( sa t)

VGE = 15V, IC=15A Tj=25C Tj=150C Tj=175C

-

1.7

2.1

2.2

-

Diode forward voltage

VF

VGE=0V, IF=15A Tj=25C Tj=150C Tj=175C

-

1.75

1.8

1.75

2.2

-

Gate-emitter threshold voltage

V

GE( th )

IC=0.6mA,VCE=VGE

5.2

5.8

6.4

Zero gate voltage collector current

I

CES

VCE=1200V, VGE=0V

Tj=25C Tj=150 C Tj=175C

-

0.4

4.0 20

mA

Gate-emitter leakage current

I

GES

VCE=0V,VGE=20V

- - 600

nA

Transconductance

gfs

VCE=20V, IC=15A

- 8 -

S

IKW15N120T2

TrenchStop

® 2nd

generation Series

Thermal Resistance

Characteristic

Electrical Characteristic, at Tj = 25 C, unless otherwise specified

Static Characteristic

IFAG IPC TD VLS

3

Rev. 2.2 12.06.2013

Input capacitance

C

iss

VCE=25V, VGE=0V, f=1MHz

-

1000

-

pF

Output capacitance

C

oss

-

100

-

Reverse transfer capacitance

C

rss

-

56

-

Gate charge

Q

Gat e

VCC=960V, IC=15A VGE=15V

-

93

-

nC

Internal emitter inductance measured 5mm (0.197 in.) from case

LE

- 13

-

nH

Short circuit collector current1)

I

C(S C)

VGE=15V,tSC10 s V

CC

= 600V,

T

j,s ta rt

= 25C

T

j,s ta rt

= 175C

-

82 60

-

A

Parameter

Symbol

Conditions

Value

Unit

min.

typ.

max.

Turn-on delay time

t

d(o n)

Tj=25C, VCC=600V,IC=15A, VGE=0/15V, RG=41.8, L



2)

=126nH,

C



2)

=34pF

Energy losses include

“tail” and diode

reverse recovery.

-

32

-

ns

Rise time

tr

-

25

-

Turn-off delay time

t

d(o ff )

-

362

-

Fall time

tf

-

95

-

Turn-on energy

Eon

-

1.25

-

mJ

Turn-off energy

E

off

-

0.8

-

Total switching energy

Ets

-

2.05

-

Diode reverse recovery time

trr

Tj=25C, VR=600V, IF=15A, diF/dt=450A/ s

-

300

-

ns

Diode reverse recovery charge

Qrr

-

1.3

µC

Diode peak reverse recovery current

I

rrm

-

10

A

Diode peak rate of fall of reverse recovery current during tb

dirr/dt

-

215

-

A/s

1

IKW15N120T2

TrenchStop

® 2nd

generation Series

Dynamic Characteristic

Switching Characteristic, Inductive Load, at Tj=25 C

IGBT Characteristic

Anti-Parallel Diode Characteristic

)

Allowed number of short circuits: <1000; time between short circuits: >1s.

2)

Leakage inductance L

and Stray capacity C due to dynamic test circuit in Figure E.



IFAG IPC TD VLS

4

Rev. 2.2 12.06.2013

Parameter

Symbol

Conditions

Value

Unit

min.

typ.

max.

Turn-on delay time

t

d(o n)

Tj=175C VCC=600V,IC=15A, VGE=0/15V, RG= 41.8 , L



1)

=315nH,

C



1)

=34pF

Energy losses include

“tail” and diode

reverse recovery.

-

31

-

ns

Rise time

tr

-

30

-

Turn-off delay time

t

d(o ff )

-

450

-

Fall time

tf

-

176

-

Turn-on energy

Eon

-

1.5

-

mJ

Turn-off energy

E

off

-

1.3

-

Total switching energy

Ets

-

2.8

-

Diode reverse recovery time

trr

Tj=175C VR=600V, IF=15A, diF/dt=460A/ s

-

460

-

ns

Diode reverse recovery charge

Qrr

-

2.65

-

µC

Diode peak reverse recovery current

I

rrm

-

13

-

A

Diode peak rate of fall of reverse recovery current during tb

dirr/dt

-

123

A/s

IKW15N120T2

TrenchStop

® 2nd

generation Series

Switching Characteristic, Inductive Load, at Tj=175 C

IGBT Characteristic

Anti-Parallel Diode Characteristic

1)

Leakage inductance L

and Stray capacity C due to dynamic test circuit in Figure E.



IFAG IPC TD VLS

5

Rev. 2.2 12.06.2013

I

C

, COLLECTOR CURRENT

10Hz 100Hz 1kHz 10kHz 100kHz

0A

20A

40A

60A

TC=110°C

TC=80°C

I

C

, COLLECTOR CURRENT

1V 10V 100V 1000V

0.1A

1A

10A

DC

10µs

tp=3µs

50µs

500µs

20ms

150µs

f, SWITCHING FREQUENCY

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 1. Collector current as a function of

switching frequency

(Tj  175C, D = 0.5, VCE = 600V, VGE = 0/+15V, RG = 41.8)

Figure 2. Safe operating area

(D = 0, TC = 25C, Tj 175C;VGE=15V)

P

tot

, POWER DISSIPATION

25°C 50°C 75°C 100°C 125°C 150°C

0W

50W

100W

150W

200W

I

C

, COLLECTOR CURRENT

25°C 75°C 125°C

0A

10A

20A

30A

TC, CASE TEMPERATURE

Figure 3. Maximum power dissipation as a

function of case temperature

(Tj  175C)

Figure 4. Maximum DC Collector current as

a function of case temperature

(VGE  15V, Tj  175C)

I

c

I

c

IKW15N120T2

TrenchStop

® 2nd

generation Series

IFAG IPC TD VLS

6

Rev. 2.2 12.06.2013

I

C

, COLLECTOR CURRENT

0V 1V 2V 3V 4V

0A

10A

20A

30A

40A

50A

60A

20V

15V

7V

9V

11V

13V

VGE=17V

I

C

, COLLECTOR CURRENT

0V 1V 2V 3V 4V

0A

10A

20A

30A

40A

50A

60A

20V

15V

7V

9V

11V

13V

VGE=17V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 5. Typical output characteristic

(Tj = 25°C)

Figure 6. Typical output characteristic

(Tj = 175°C)

I

C

, COLLECTOR CURRENT

0V 2V 4V 6V 8V 10V 12V

0A

10A

20A

30A

40A

50A

60A

25°C

TJ=175°C

V

CE(sat),

COLLECTOR-EMITT SATURATION VOLTAGE

0°C 50°C 100°C 150°C

0.0V

0.5V

1.0V

1.5V

2.0V

2.5V

3.0V

IC=15A

IC=30A

IC=7.5A

IC=2A

V

GE

, GATE-EMITTER VOLTAGE

TJ, JUNCTION TEMPERATURE

Figure 7. Typical transfer characteristic

(VCE=20V)

Figure 8. Typical collector-emitter

saturation voltage as a function of junction temperature

(VGE = 15V)

IKW15N120T2

TrenchStop

® 2nd

generation Series

IFAG IPC TD VLS

7

Rev. 2.2 12.06.2013

t, SWITCHING TIMES

7.5A 15.0A 22.5A

10ns

100ns

t

r

t

d(on)

t

f

t

d(off)

t, SWITCHING TIMES

     

10 ns

100 ns

1000 ns

t

f

t

r

t

d(off)

t

d(on)

IC, COLLECTOR CURRENT

RG, GATE RESISTOR

Figure 9. Typical switching times as a

function of collector current

(inductive load, TJ=175°C, VCE=600V, VGE=0/15V, RG=41.8Ω,

Dynamic test circuit in Figure E)

Figure 10. Typical switching times as a

function of gate resistor

(inductive load, TJ=175°C, VCE=600V, VGE=0/15V, IC=15A,

Dynamic test circuit in Figure E)

t, SWITCHING TIMES

0°C 50°C 100°C 150°C

10ns

100ns

t

r

t

f

t

d(on)

t

d(off)

V

GE(th),

GATE-EMITT TRSHOLD VOLTAGE

0°C 50°C 100°C 150°C

3.5V

4.0V

4.5V

5.0V

5.5V

6.0V

6.5V

min.

typ.

max.

TJ, JUNCTION TEMPERATURE

Figure 11. Typical switching times as a

function of junction temperature

(inductive load, VCE=600V, VGE=0/15V, IC=15A, RG=41.8Ω, Dynamic test circuit in Figure E)

Figure 12. Gate-emitter threshold voltage as

a function of junction temperature

(IC = 600µA)

IKW15N120T2

TrenchStop

® 2nd

generation Series

IFAG IPC TD VLS

8

Rev. 2.2 12.06.2013

E, SWITCHING ENERGY LOSSES

7.5A 15.0A 22.5A

0.0mJ

2.5mJ

5.0mJ

7.5mJ

Ets*

E

off

*) Eon and Etsinclude losses due to diode recovery

Eon*

E, SWITCHING ENERGY LOSSES

     

0.00 mJ

1.25 mJ

2.50 mJ

3.75 mJ

5.00 mJ

Ets*

Eon*

*) Eon and Ets include losses due to diode recovery

E

off

IC, COLLECTOR CURRENT

RG, GATE RESISTOR

Figure 13. Typical switching energy losses

as a function of collector current

(inductive load, TJ=175°C, VCE=600V, VGE=0/15V, RG=41.8Ω,

Dynamic test circuit in Figure E)

Figure 14. Typical switching energy losses

as a function of gate resistor

(inductive load, TJ=175°C, VCE=600V, VGE=0/15V, IC=15A,

Dynamic test circuit in Figure E)

E, SWITCHING ENERGY LOSSES

0°C 50°C 100°C 150°C

0.0mJ

1.2mJ

2.4mJ

Ets*

Eon*

*) Eon and Ets include losses due to diode recovery

E

off

E, SWITCHING ENERGY LOSSES

400V 500V 600V 700V

0.00mJ

1.25mJ

2.50mJ

3.75mJ

5.00mJ

Ets*

Eon*

*) Eon and Ets include losses due to diode recovery

E

off

TJ, JUNCTION TEMPERATURE

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 15. Typical switching energy losses

as a function of junction temperature

(inductive load, VCE=600V, VGE=0/15V, IC=15A, RG=41.8Ω, Dynamic test circuit in Figure E)

Figure 16. Typical switching energy losses

as a function of collector emitter voltage

(inductive load, TJ=175°C, VGE=0/15V, IC=15A, RG=41.8Ω, Dynamic test circuit in Figure E)

IKW15N120T2

TrenchStop

® 2nd

generation Series

IFAG IPC TD VLS

9

Rev. 2.2 12.06.2013

V

GE

, GATE-EMITTER VOLTAGE

0nC 25nC 50nC 75nC

0V

5V

10V

15V

960V

240V

c, CAPACITANCE

0V 10V 20V

10pF

100pF

1nF

C

rss

C

oss

C

iss

QGE, GATE CHARGE

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 17. Typical gate charge

(IC=15 A)

Figure 18. Typical capacitance as a function

of collector-emitter voltage

(VGE=0V, f = 1 MHz)

t

SC

, SHORT CIRCUIT WITHSTAND TIME

12V 14V 16V 18V

0µs

5µs

10µs

15µs

I

C(sc)

, short circuit COLLECTOR CURRENT

12V 14V 16V 18V

0A

25A

50A

75A

100A

VGE, GATE-EMITTETR VOLTAGE

Figure 19. Short circuit withstand time as a

function of gate-emitter voltage

(VCE=600V, start at TJ175°C)

Figure 20. Typical short circuit collector

current as a function of gateemitter voltage

(VCE  600V, T

j,start

=175C)

IKW15N120T2

TrenchStop

® 2nd

generation Series

IFAG IPC TD VLS

10

Rev. 2.2 12.06.2013

V

CE

, COLLECTOR-EMITTER VOLTAGE

0V

200V

400V

600V

0A

5A

10A

15A

20A

25A

1.2us0.8us0.4us

0us

I

C

V

CE

I

C

, COLLECTOR CURRENT

0V

200V

400V

600V

0A

5A

10A

15A

1.2us0.8us0.4us

0us

I

C

V

CE

t, TIME

Figure 21. Typical turn on behavior

(VGE=0/15V, RG=41.8Ω, Tj = 175C, Dynamic test circuit in Figure E)

Figure 22. Typical turn off behavior

(VGE=15/0V, RG=41.8Ω, Tj = 175C, Dynamic test circuit in Figure E)

Z

thJC

, TRANSIENT THERMAL RESISTANCE

10µs 100µs 1ms 10ms 100ms

10-2K/W

10-1K/W

100K/W

single pulse

0.01

0.02

0.05

0.1

0.2

D=0.5

Z

thJC

, TRANSIENT THERMAL RESISTANCE

10µs 100µs 1ms 10ms 100ms

10-2K/W

10-1K/W

100K/W

single pulse

0.01

0.02

0.05

0.1

0.2

D=0.5

tP, PULSE WIDTH

Figure 23. IGBT transient thermal resistance

(D = tp / T)

Figure 24. Diode transient thermal

impedance as a function of pulse width

(D=tP/T)

R,(K/W )



, (s)



0.143

3.06*10-4

0.217

3.47*10

-3

0.258

1.71*10-2

0.017

2.63*10-1

C1=



1/R1

R1R

2

C2=



2/R2

R,(K/W )



, (s)



0.291

2.75*10-4

0.434

2.60*10

-3

0.363

1.48*10-2

0.028

1.78*10-1

C1=



1/R1

R1R

2

C2=



2/R2

IKW15N120T2

TrenchStop

® 2nd

generation Series

IFAG IPC TD VLS

11

Rev. 2.2 12.06.2013

t

rr

, REVERSE RECOVERY TIME

400A/µs 800A/µs 1200A/µs

0ns

100ns

200ns

300ns

400ns

500ns

600ns

TJ=25°C

TJ=175°C

Q

rr

, REVERSE RECOVERY CHARGE

400A/µs 800A/µs 1200A/µs

0µC

1µC

2µC

3µC

TJ=25°C

TJ=175°C

diF/dt, DIODE CURRENT SLOPE

Figure 23. Typical reverse recovery time as

a function of diode current slope

(VR=600V, IF=15A, Dynamic test circuit in Figure E)

Figure 24. Typical reverse recovery charge

as a function of diode current slope

(VR=600V, IF=15A, Dynamic test circuit in Figure E)

I

rr

, REVERSE RECOVERY CURRENT

400A/µs 800A/µs 1200A/µs

0A

5A

10A

15A

20A

TJ=25°C

TJ=175°C

di

rr

/dt, DIODE PEAK RATE OF FALL

OF REVERSE RECOVERY CURRENT

400A/µs 800A/µs 1200A/µs

-0A/µs

-100A/µs

-200A/µs

-300A/µs

-400A/µs

-500A/µs

-600A/µs

TJ=25°C

TJ=175°C

diF/dt, DIODE CURRENT SLOPE

Figure 25. Typical reverse recovery current

as a function of diode current slope

(VR=600V, IF=15A, Dynamic test circuit in Figure E)

Figure 26. Typical diode peak rate of fall of

reverse recovery current as a function of diode current slope

(VR=600V, IF=15A, Dynamic test circuit in Figure E)

IKW15N120T2

TrenchStop

® 2nd

generation Series

IFAG IPC TD VLS

12

Rev. 2.2 12.06.2013

I

F

, FORWARD CURRENT

0V 1V 2V

0A

10A

20A

30A

40A

50A

60A

175°C

TJ=25°C

V

F

, FORWARD VOLTAGE

0°C 50°C 100°C 150°C

0.0V

0.5V

1.0V

1.5V

2.0V 15A

7.5A

IF=30A

2A

VF, FORWARD VOLTAGE

TJ, JUNCTION TEMPERATURE

Figure 27. Typical diode forward current as

a function of forward voltage

Figure 28. Typical diode forward voltage as a

function of junction temperature

IKW15N120T2

TrenchStop

® 2nd

generation Series

IFAG IPC TD VLS

13

Rev. 2.2 12.06.2013

IKW15N120T2

TrenchStop

® 2nd

generation Series

IFAG IPC TD VLS

14

Rev. 2.2 12.06.2013

I

r r m

90% I

r r m

10% I

r r m

di /dt

F

t

r r

I

F

i,v

t

Q

S

Q

F

t

S

t

F

V

R

di /dt

r r

Q =Q Q

r r S F

+

t =t t

r r S F

+

Figure C. Definition of diodes switching characteristics

p(t)

1 2 n

T (t)

j



1



2 2

n



T

C

r r

r

rr

Figure D. Thermal equivalent circuit

Figure E. Dynamic test circuit

Figure A. Definition of switching times

Figure B. Definition of switching losses

IKW15N120T2

TrenchStop

® 2nd

generation Series

IFAG IPC TD VLS

15

Rev. 2.2 12.06.2013

IKW15N120T2

TrenchStop

® 2nd

generation Series

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.